CN100468576C - 闪存数据读写处理方法 - Google Patents
闪存数据读写处理方法 Download PDFInfo
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- CN100468576C CN100468576C CNB200710074652XA CN200710074652A CN100468576C CN 100468576 C CN100468576 C CN 100468576C CN B200710074652X A CNB200710074652X A CN B200710074652XA CN 200710074652 A CN200710074652 A CN 200710074652A CN 100468576 C CN100468576 C CN 100468576C
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- flash memory
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- 238000003672 processing method Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 79
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- 238000005056 compaction Methods 0.000 claims description 7
- 238000013144 data compression Methods 0.000 claims description 5
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (9)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200710074652XA CN100468576C (zh) | 2007-05-30 | 2007-05-30 | 闪存数据读写处理方法 |
TW096134034A TWI342490B (en) | 2007-05-30 | 2007-09-12 | Flash memory data read/write processing method |
PCT/CN2008/071142 WO2008145070A1 (en) | 2007-05-30 | 2008-05-30 | Flash memory data read/write processing method |
JP2010509666A JP2010528380A (ja) | 2007-05-30 | 2008-05-30 | フラッシュメモリのリード・ライト処理方法 |
US12/627,841 US20100138594A1 (en) | 2007-05-30 | 2009-11-30 | Flash memory data read/write processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200710074652XA CN100468576C (zh) | 2007-05-30 | 2007-05-30 | 闪存数据读写处理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101083138A CN101083138A (zh) | 2007-12-05 |
CN100468576C true CN100468576C (zh) | 2009-03-11 |
Family
ID=38912611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200710074652XA Active CN100468576C (zh) | 2007-05-30 | 2007-05-30 | 闪存数据读写处理方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100138594A1 (zh) |
JP (1) | JP2010528380A (zh) |
CN (1) | CN100468576C (zh) |
TW (1) | TWI342490B (zh) |
WO (1) | WO2008145070A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105976866A (zh) * | 2016-04-21 | 2016-09-28 | 清华大学 | 二进制数据序列的编码方法、存储装置和电子设备 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100468576C (zh) * | 2007-05-30 | 2009-03-11 | 忆正存储技术(深圳)有限公司 | 闪存数据读写处理方法 |
US7826277B2 (en) * | 2008-03-10 | 2010-11-02 | Hynix Semiconductor Inc. | Non-volatile memory device and method of operating the same |
US8341501B2 (en) * | 2009-04-30 | 2012-12-25 | International Business Machines Corporation | Adaptive endurance coding of non-volatile memories |
TWI415130B (zh) * | 2009-06-02 | 2013-11-11 | Silicon Motion Inc | 快閃記憶體之控制器以及於快閃記憶體存取資料的方法 |
US9170933B2 (en) * | 2010-06-28 | 2015-10-27 | International Business Machines Corporation | Wear-level of cells/pages/sub-pages/blocks of a memory |
CN102063936A (zh) * | 2010-10-27 | 2011-05-18 | 苏州亮智科技有限公司 | 一种提高闪存可靠性的方法 |
US9093154B2 (en) * | 2012-01-16 | 2015-07-28 | Silicon Motion, Inc. | Method, memory controller and system for reading data stored in flash memory |
JP5962258B2 (ja) | 2012-06-29 | 2016-08-03 | 富士通株式会社 | データ変換方法、データ変換装置およびデータ変換プログラム |
KR20140076127A (ko) * | 2012-12-12 | 2014-06-20 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 동작 방법과, 이를 포함하는 데이터 처리 시스템 |
CN103678148A (zh) * | 2013-12-03 | 2014-03-26 | 华为技术有限公司 | 提高闪存芯片寿命方法和装置 |
WO2015116158A2 (en) * | 2014-01-31 | 2015-08-06 | Hewlett-Packard Development Company, L.P. | Encoding data in a memory array |
JP6155214B2 (ja) * | 2014-03-25 | 2017-06-28 | 京セラドキュメントソリューションズ株式会社 | データ記憶装置及び画像処理装置 |
CN105556489B (zh) * | 2014-04-11 | 2019-04-26 | 华为技术有限公司 | 一种数据处理方法、装置 |
CN104467871B (zh) * | 2014-11-17 | 2018-03-27 | 哈尔滨工业大学 | 提高NAND Flash存储可靠性的数据存储方法 |
CN106547487A (zh) * | 2016-10-21 | 2017-03-29 | 华中科技大学 | 一种提高闪存可靠性的数据塑型方法 |
CN107102820B (zh) * | 2017-04-17 | 2018-07-06 | 北京得瑞领新科技有限公司 | 一种nand闪存设备的数据处理方法及装置 |
CN107957917A (zh) * | 2017-10-25 | 2018-04-24 | 深圳市致存微电子企业(有限合伙) | 数据处理方法、主机、存储设备及存储介质 |
CN115512757B (zh) * | 2022-11-02 | 2023-03-21 | 深圳三地一芯电子有限责任公司 | 错误复现修复方法、装置、设备及存储介质 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5673224A (en) * | 1996-02-23 | 1997-09-30 | Micron Quantum Devices, Inc. | Segmented non-volatile memory array with multiple sources with improved word line control circuitry |
SE512613C2 (sv) * | 1996-12-30 | 2000-04-10 | Ericsson Telefon Ab L M | Metod och organ för informationshantering |
JP2000231793A (ja) * | 1999-02-09 | 2000-08-22 | Nec Corp | フラッシュメモリの書込制御装置及びその書込制御方法 |
JP4280055B2 (ja) * | 2001-11-28 | 2009-06-17 | 株式会社Access | メモリ制御方法および装置 |
CN100364013C (zh) * | 2002-09-07 | 2008-01-23 | 鸿富锦精密工业(深圳)有限公司 | 在闪存中存放校验码的方法及装置 |
JP2005038518A (ja) * | 2003-07-15 | 2005-02-10 | Oki Electric Ind Co Ltd | メモリのデータ書き換え方法 |
JP2005157781A (ja) * | 2003-11-26 | 2005-06-16 | Sony Corp | 情報処理装置および情報処理方法 |
CN100468576C (zh) * | 2007-05-30 | 2009-03-11 | 忆正存储技术(深圳)有限公司 | 闪存数据读写处理方法 |
US8078795B2 (en) * | 2008-01-31 | 2011-12-13 | Dell Products L.P. | Methods and media for writing data to flash memory |
US7961520B2 (en) * | 2009-08-18 | 2011-06-14 | Seagate Technology Llc | Encoding and decoding to reduce switching of flash memory transistors |
-
2007
- 2007-05-30 CN CNB200710074652XA patent/CN100468576C/zh active Active
- 2007-09-12 TW TW096134034A patent/TWI342490B/zh not_active IP Right Cessation
-
2008
- 2008-05-30 WO PCT/CN2008/071142 patent/WO2008145070A1/en active Application Filing
- 2008-05-30 JP JP2010509666A patent/JP2010528380A/ja active Pending
-
2009
- 2009-11-30 US US12/627,841 patent/US20100138594A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105976866A (zh) * | 2016-04-21 | 2016-09-28 | 清华大学 | 二进制数据序列的编码方法、存储装置和电子设备 |
CN105976866B (zh) * | 2016-04-21 | 2019-11-26 | 清华大学 | 二进制数据序列的编码方法、存储装置和电子设备 |
Also Published As
Publication number | Publication date |
---|---|
TWI342490B (en) | 2011-05-21 |
US20100138594A1 (en) | 2010-06-03 |
CN101083138A (zh) | 2007-12-05 |
TW200912640A (en) | 2009-03-16 |
JP2010528380A (ja) | 2010-08-19 |
WO2008145070A1 (en) | 2008-12-04 |
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Address after: 430074 Hubei city of Wuhan province East Lake New Technology Development Zone Road No. two high Guan Nan Industrial Park Building No. two West 3 floor Patentee after: MEMORIGHT (WUHAN) Co.,Ltd. Address before: 430074 Hubei city of Wuhan province Kuanshan Road, Optics Valley software park three building C3 room 301-303 building Patentee before: MEMORIGHT (WUHAN)CO.,LTD. |
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Address after: 430070 Wuhan, Hubei Wuhan East Lake New Technology Development Zone, high-tech two Road No. 1 South Guan Industrial Park 2 factory 2-3 floor West. Patentee after: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. Address before: 430074 west 3 floor, two Guan Nan Industrial Park, two new road, Wuhan, Hubei, East Lake. Patentee before: MEMORIGHT (WUHAN) Co.,Ltd. |
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Denomination of invention: Flash memory data reading and writing processing method Effective date of registration: 20220120 Granted publication date: 20090311 Pledgee: Wuhan area branch of Hubei pilot free trade zone of Bank of China Ltd. Pledgor: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. Registration number: Y2022420000020 |
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Address after: 430000 west of 2-3 / F, No.2 factory building, Guannan Industrial Park, No.1 Gaoxin 2nd Road, Wuhan Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: Zhiyu Technology Co.,Ltd. Address before: 430070 Wuhan, Hubei Wuhan East Lake New Technology Development Zone, high-tech two Road No. 1 South Guan Industrial Park 2 factory 2-3 floor West. Patentee before: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. |