CN100452449C - 硅衬底上的氮化物半导体及其制造方法 - Google Patents
硅衬底上的氮化物半导体及其制造方法 Download PDFInfo
- Publication number
- CN100452449C CN100452449C CNB2004100850229A CN200410085022A CN100452449C CN 100452449 C CN100452449 C CN 100452449C CN B2004100850229 A CNB2004100850229 A CN B2004100850229A CN 200410085022 A CN200410085022 A CN 200410085022A CN 100452449 C CN100452449 C CN 100452449C
- Authority
- CN
- China
- Prior art keywords
- intermediate layer
- nitride
- silicon substrate
- layer
- levelling blanket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 90
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 239000010703 silicon Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000011248 coating agent Substances 0.000 claims description 29
- 238000000576 coating method Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 12
- 230000007547 defect Effects 0.000 abstract description 11
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 14
- 230000012010 growth Effects 0.000 description 14
- 238000001878 scanning electron micrograph Methods 0.000 description 12
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 4
- -1 nitride compound Chemical class 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR70984/03 | 2003-10-13 | ||
KR70984/2003 | 2003-10-13 | ||
KR1020030070984A KR100744933B1 (ko) | 2003-10-13 | 2003-10-13 | 실리콘 기판 상에 형성된 질화물 반도체 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1607683A CN1607683A (zh) | 2005-04-20 |
CN100452449C true CN100452449C (zh) | 2009-01-14 |
Family
ID=34420627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100850229A Expired - Fee Related CN100452449C (zh) | 2003-10-13 | 2004-10-13 | 硅衬底上的氮化物半导体及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050077512A1 (zh) |
JP (1) | JP2005123619A (zh) |
KR (1) | KR100744933B1 (zh) |
CN (1) | CN100452449C (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4826703B2 (ja) * | 2004-09-29 | 2011-11-30 | サンケン電気株式会社 | 半導体素子の形成に使用するための板状基体 |
WO2009128646A2 (en) * | 2008-04-16 | 2009-10-22 | Lumigntech Co., Ltd. | Semiconductor substrate and method for manufacturing the same |
KR101101780B1 (ko) * | 2008-09-08 | 2012-01-05 | 서울대학교산학협력단 | 질화물 박막 구조 및 그 형성 방법 |
KR101046144B1 (ko) * | 2008-10-21 | 2011-07-01 | 삼성엘이디 주식회사 | 질화갈륨막 제조방법 및 질화계 이종접합 전계효과 트랜지스터 제조방법 |
KR101020473B1 (ko) | 2008-11-26 | 2011-03-08 | 한국광기술원 | 발광소자 및 그의 제조방법 |
KR101047617B1 (ko) * | 2009-05-21 | 2011-07-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101220433B1 (ko) | 2009-06-10 | 2013-02-04 | 서울옵토디바이스주식회사 | 반도체 기판, 그 제조 방법, 반도체 소자 및 그 제조 방법 |
US8860183B2 (en) * | 2009-06-10 | 2014-10-14 | Seoul Viosys Co., Ltd. | Semiconductor substrate, semiconductor device, and manufacturing methods thereof |
US8481411B2 (en) | 2009-06-10 | 2013-07-09 | Seoul Opto Device Co., Ltd. | Method of manufacturing a semiconductor substrate having a cavity |
KR101087901B1 (ko) | 2009-08-11 | 2011-11-30 | 한국광기술원 | 질화물 반도체 발광소자 및 그 제조방법 |
CN104716023B (zh) | 2009-08-26 | 2017-08-29 | 首尔伟傲世有限公司 | 制造半导体基底的方法和制造发光装置的方法 |
KR101082788B1 (ko) | 2009-10-16 | 2011-11-14 | 한국산업기술대학교산학협력단 | 다공성 질화물 반도체 상의 고품질 비극성/반극성 반도체 소자 및 그 제조 방법 |
JP5570838B2 (ja) | 2010-02-10 | 2014-08-13 | ソウル バイオシス カンパニー リミテッド | 半導体基板、その製造方法、半導体デバイス及びその製造方法 |
CN102376830B (zh) * | 2010-08-19 | 2015-07-08 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
WO2012050888A2 (en) * | 2010-09-28 | 2012-04-19 | North Carolina State University | Gallium nitride based structures with embedded voids and methods for their fabrication |
KR20120032329A (ko) | 2010-09-28 | 2012-04-05 | 삼성전자주식회사 | 반도체 소자 |
KR101638975B1 (ko) * | 2010-10-26 | 2016-07-12 | 삼성전자주식회사 | 중공 부재 패턴을 구비한 질화물 반도체 기판 및 제조방법 |
US20120105385A1 (en) * | 2010-11-02 | 2012-05-03 | Qualcomm Mems Technologies, Inc. | Electromechanical systems apparatuses and methods for providing rough surfaces |
KR101749694B1 (ko) | 2010-12-17 | 2017-06-22 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법과 상기 반도체 소자를 포함하는 전자 장치 |
KR20120079393A (ko) * | 2011-01-04 | 2012-07-12 | (주)세미머티리얼즈 | 반도체 발광소자의 제조방법 |
KR101761309B1 (ko) * | 2011-04-19 | 2017-07-25 | 삼성전자주식회사 | GaN 박막 구조물, 그의 제조 방법, 및 그를 포함하는 반도체 소자 |
KR101773091B1 (ko) * | 2011-05-20 | 2017-08-30 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조 방법 |
KR101466037B1 (ko) * | 2011-12-15 | 2014-11-28 | 서울대학교산학협력단 | 반도체 소자용 기판, 이를 이용한 질화물 박막 구조 및 그 형성 방법 |
US20140158976A1 (en) * | 2012-12-06 | 2014-06-12 | Sansaptak DASGUPTA | Iii-n semiconductor-on-silicon structures and techniques |
WO2015025631A1 (ja) * | 2013-08-21 | 2015-02-26 | シャープ株式会社 | 窒化物半導体発光素子 |
KR102122846B1 (ko) * | 2013-09-27 | 2020-06-15 | 서울바이오시스 주식회사 | 질화물 반도체 성장 방법, 이를 이용한 반도체 제조용 템플릿 제조 방법 및 반도체 발광 소자 제조 방법 |
CN103928583B (zh) * | 2014-04-29 | 2017-06-13 | 中国科学院上海微***与信息技术研究所 | 一种GaN单晶自支撑衬底的制备方法 |
US9337023B1 (en) * | 2014-12-15 | 2016-05-10 | Texas Instruments Incorporated | Buffer stack for group IIIA-N devices |
US11699586B2 (en) * | 2019-08-13 | 2023-07-11 | Enkris Semiconductor, Inc. | Method of manufacturing nitride semiconductor substrate |
WO2022204913A1 (en) * | 2021-03-30 | 2022-10-06 | Innoscience (Suzhou) Technology Co., Ltd. | Iii nitride semiconductor devices on patterned substrates |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1148734A (zh) * | 1995-09-25 | 1997-04-30 | 三菱电机株式会社 | 一种半导体光发射器件及其制作方法 |
CN1203285A (zh) * | 1997-04-09 | 1998-12-30 | 松下电子工业株式会社 | 氮化镓结晶的制造方法 |
US5927995A (en) * | 1997-04-09 | 1999-07-27 | Hewlett-Packard Company | Reduction of threading dislocations by amorphization and recrystallization |
JP2000021789A (ja) * | 1997-08-29 | 2000-01-21 | Toshiba Corp | 窒化物系半導体素子、発光素子及びその製造方法 |
CN1387231A (zh) * | 2001-05-21 | 2002-12-25 | 日本电气株式会社 | 基于氮化物的化合物半导体晶体衬底结构及其制造方法 |
US6555846B1 (en) * | 1999-06-10 | 2003-04-29 | Pioneer Corporation | Method for manufacturing a nitride semiconductor device and device manufactured by the method |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US6677619B1 (en) * | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
CN1297016C (zh) * | 1997-01-09 | 2007-01-24 | 日亚化学工业株式会社 | 氮化物半导体元器件 |
US6294159B1 (en) * | 1998-10-09 | 2001-09-25 | Colgate Palmolive Company | Volumizing hair care compositions |
JP3592553B2 (ja) * | 1998-10-15 | 2004-11-24 | 株式会社東芝 | 窒化ガリウム系半導体装置 |
JP2000357820A (ja) * | 1999-06-15 | 2000-12-26 | Pioneer Electronic Corp | 窒化ガリウム系半導体発光素子及びその製造方法 |
JP4432180B2 (ja) * | 1999-12-24 | 2010-03-17 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法、iii族窒化物系化合物半導体素子及びiii族窒化物系化合物半導体 |
JP2001223165A (ja) | 2000-02-10 | 2001-08-17 | Hitachi Cable Ltd | 窒化物半導体及びその製造方法 |
JP3729065B2 (ja) * | 2000-12-05 | 2005-12-21 | 日立電線株式会社 | 窒化物半導体エピタキシャルウェハの製造方法及び窒化物半導体エピタキシャルウェハ |
JP4595198B2 (ja) * | 2000-12-15 | 2010-12-08 | ソニー株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
JP2003046199A (ja) | 2001-07-27 | 2003-02-14 | Canon Inc | 多孔質膜を用いたii−vi族デバイスの作製法および構成 |
JP2003086508A (ja) | 2001-09-12 | 2003-03-20 | Canon Inc | 化合物半導体層基板およびその作製方法、並びにこの基板上に作製したデバイス |
TWI303909B (en) * | 2002-11-25 | 2008-12-01 | Nichia Corp | Ridge waveguide semiconductor laser diode |
-
2003
- 2003-10-13 KR KR1020030070984A patent/KR100744933B1/ko not_active IP Right Cessation
-
2004
- 2004-09-27 US US10/949,469 patent/US20050077512A1/en not_active Abandoned
- 2004-10-12 JP JP2004297529A patent/JP2005123619A/ja active Pending
- 2004-10-13 CN CNB2004100850229A patent/CN100452449C/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1148734A (zh) * | 1995-09-25 | 1997-04-30 | 三菱电机株式会社 | 一种半导体光发射器件及其制作方法 |
CN1203285A (zh) * | 1997-04-09 | 1998-12-30 | 松下电子工业株式会社 | 氮化镓结晶的制造方法 |
US5927995A (en) * | 1997-04-09 | 1999-07-27 | Hewlett-Packard Company | Reduction of threading dislocations by amorphization and recrystallization |
JP2000021789A (ja) * | 1997-08-29 | 2000-01-21 | Toshiba Corp | 窒化物系半導体素子、発光素子及びその製造方法 |
US6555846B1 (en) * | 1999-06-10 | 2003-04-29 | Pioneer Corporation | Method for manufacturing a nitride semiconductor device and device manufactured by the method |
CN1387231A (zh) * | 2001-05-21 | 2002-12-25 | 日本电气株式会社 | 基于氮化物的化合物半导体晶体衬底结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20050035565A (ko) | 2005-04-19 |
US20050077512A1 (en) | 2005-04-14 |
JP2005123619A (ja) | 2005-05-12 |
CN1607683A (zh) | 2005-04-20 |
KR100744933B1 (ko) | 2007-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100452449C (zh) | 硅衬底上的氮化物半导体及其制造方法 | |
US7811902B2 (en) | Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same | |
US8475588B2 (en) | Wafer structure and epitaxial growth method for growing the same | |
TW558845B (en) | III-Nitride light emitting devices with low driving voltage | |
CN100380588C (zh) | 氮化镓层的制备方法 | |
JP3786544B2 (ja) | 窒化物半導体素子の製造方法及びかかる方法により製造された素子 | |
US7655090B2 (en) | Method of controlling stress in gallium nitride films deposited on substrates | |
US6440823B1 (en) | Low defect density (Ga, Al, In)N and HVPE process for making same | |
US7358160B2 (en) | Method of selective formation of compound semiconductor-on-silicon wafer with silicon nanowire buffer layer | |
KR101380717B1 (ko) | 반도체 기판 및 수소화물-기상 에피택시에 의해자유-기립형 반도체 기판을 제조하기 위한 방법 및 마스크층 | |
US7118934B2 (en) | Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate | |
US9105471B2 (en) | Rare earth oxy-nitride buffered III-N on silicon | |
Jang et al. | High-quality GaN/Si (1 1 1) epitaxial layers grown with various Al0. 3Ga0. 7N/GaN superlattices as intermediate layer by MOCVD | |
KR20000025914A (ko) | Gan계 화합물 반도체 및 그의 결정성장 방법 | |
US6500747B1 (en) | Method of manufacturing GaN semiconductor substrate | |
US20120183767A1 (en) | Hexagonal reo template buffer for iii-n layers on silicon | |
JP2011515861A (ja) | 窒化ガリウムまたはガリウムおよびアルミニウム窒化物の層を製造する方法 | |
CN104518062A (zh) | 制造半导体发光器件的方法 | |
US20060141753A1 (en) | Epitaxial structure of gallium nitride series semiconductor device and process of manufacturing the same | |
US20110101307A1 (en) | Substrate for semiconductor device and method for manufacturing the same | |
US20070238211A1 (en) | Growing lower defect semiconductor crystals on highly lattice-mismatched substrates | |
KR100571225B1 (ko) | 질화물계 화합물 반도체의 성장방법 | |
WO2018092689A1 (ja) | 化合物半導体基板の製造方法および化合物半導体基板 | |
KR101384071B1 (ko) | 질화물 반도체 기판, 이의 제조방법 및 질화물 반도체 기판을 구비하는 발광 다이오드 | |
KR100576850B1 (ko) | 질화물 반도체 발광소자 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG LED CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRO-MECHANICS CO., LTD. Effective date: 20100919 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: GYEONGGI, SOUTH KOREA TO: SUWON CITY, GYEONGGI, SOUTH KOREA |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100919 Address after: Gyeonggi Do Korea Suwon Patentee after: Samsung LED Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electro-Mechanics Co.,Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAMSUNG LED CO., LTD. Effective date: 20121205 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121205 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG ELECTRONICS Co.,Ltd. Address before: Gyeonggi Do Korea Suwon Patentee before: Samsung LED Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090114 Termination date: 20211013 |
|
CF01 | Termination of patent right due to non-payment of annual fee |