CN100437984C - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN100437984C CN100437984C CNB038129159A CN03812915A CN100437984C CN 100437984 C CN100437984 C CN 100437984C CN B038129159 A CNB038129159 A CN B038129159A CN 03812915 A CN03812915 A CN 03812915A CN 100437984 C CN100437984 C CN 100437984C
- Authority
- CN
- China
- Prior art keywords
- insulating barrier
- silicon substrate
- semiconductor device
- district
- passivation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000012212 insulator Substances 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 3
- 230000004888 barrier function Effects 0.000 claims description 30
- 238000002161 passivation Methods 0.000 claims description 20
- 150000003376 silicon Chemical class 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 abstract description 3
- 239000003989 dielectric material Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 10
- 230000003068 static effect Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000013404 process transfer Methods 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66265—Thin film bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Thin Film Transistor (AREA)
- Bipolar Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10224615.7 | 2002-06-04 | ||
DE10224615A DE10224615A1 (de) | 2002-06-04 | 2002-06-04 | Halbleiteranordnung und Verfahren zum Herstellen derselben |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1659697A CN1659697A (zh) | 2005-08-24 |
CN100437984C true CN100437984C (zh) | 2008-11-26 |
Family
ID=29557497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038129159A Expired - Fee Related CN100437984C (zh) | 2002-06-04 | 2003-06-02 | 半导体器件及其制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7332778B2 (zh) |
EP (1) | EP1514305A2 (zh) |
JP (1) | JP2005528798A (zh) |
CN (1) | CN100437984C (zh) |
AU (1) | AU2003242872A1 (zh) |
DE (1) | DE10224615A1 (zh) |
WO (1) | WO2003103041A2 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI248681B (en) * | 2004-03-29 | 2006-02-01 | Imec Inter Uni Micro Electr | Method for fabricating self-aligned source and drain contacts in a double gate FET with controlled manufacturing of a thin Si or non-Si channel |
KR101127574B1 (ko) * | 2009-04-06 | 2012-03-23 | 삼성모바일디스플레이주식회사 | 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법 |
US8299561B2 (en) | 2010-04-21 | 2012-10-30 | International Business Machines Corporation | Shielding for high-voltage semiconductor-on-insulator devices |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2110470A (en) * | 1981-11-27 | 1983-06-15 | Hughes Aircraft Co | Polycrystalline semiconductor resistor |
JPH108005A (ja) * | 1996-06-25 | 1998-01-13 | Sony Corp | 異方性導電接着剤 |
JP2001230423A (ja) * | 2000-01-12 | 2001-08-24 | Internatl Business Mach Corp <Ibm> | Soimosfetデバイスおよびその形成方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5812353A (ja) * | 1981-07-15 | 1983-01-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US5198379A (en) * | 1990-04-27 | 1993-03-30 | Sharp Kabushiki Kaisha | Method of making a MOS thin film transistor with self-aligned asymmetrical structure |
KR100294026B1 (ko) * | 1993-06-24 | 2001-09-17 | 야마자끼 순페이 | 전기광학장치 |
JPH0738005A (ja) * | 1993-07-21 | 1995-02-07 | Sony Corp | 半導体装置およびその製造方法 |
US6331473B1 (en) * | 1998-12-29 | 2001-12-18 | Seiko Epson Corporation | SOI substrate, method for making the same, semiconductive device and liquid crystal panel using the same |
-
2002
- 2002-06-04 DE DE10224615A patent/DE10224615A1/de not_active Withdrawn
-
2003
- 2003-06-02 CN CNB038129159A patent/CN100437984C/zh not_active Expired - Fee Related
- 2003-06-02 AU AU2003242872A patent/AU2003242872A1/en not_active Abandoned
- 2003-06-02 JP JP2004510025A patent/JP2005528798A/ja active Pending
- 2003-06-02 WO PCT/IB2003/002084 patent/WO2003103041A2/en active Application Filing
- 2003-06-02 EP EP03756079A patent/EP1514305A2/en not_active Withdrawn
- 2003-06-02 US US10/516,713 patent/US7332778B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2110470A (en) * | 1981-11-27 | 1983-06-15 | Hughes Aircraft Co | Polycrystalline semiconductor resistor |
JPH108005A (ja) * | 1996-06-25 | 1998-01-13 | Sony Corp | 異方性導電接着剤 |
JP2001230423A (ja) * | 2000-01-12 | 2001-08-24 | Internatl Business Mach Corp <Ibm> | Soimosfetデバイスおよびその形成方法 |
Also Published As
Publication number | Publication date |
---|---|
DE10224615A1 (de) | 2003-12-18 |
WO2003103041A3 (en) | 2004-02-12 |
US20060068530A1 (en) | 2006-03-30 |
AU2003242872A1 (en) | 2003-12-19 |
CN1659697A (zh) | 2005-08-24 |
US7332778B2 (en) | 2008-02-19 |
JP2005528798A (ja) | 2005-09-22 |
WO2003103041A2 (en) | 2003-12-11 |
AU2003242872A8 (en) | 2003-12-19 |
EP1514305A2 (en) | 2005-03-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20070831 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070831 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081126 Termination date: 20210602 |
|
CF01 | Termination of patent right due to non-payment of annual fee |