CN100429773C - 模块及使用它的安装构造体 - Google Patents

模块及使用它的安装构造体 Download PDF

Info

Publication number
CN100429773C
CN100429773C CNB2005800007387A CN200580000738A CN100429773C CN 100429773 C CN100429773 C CN 100429773C CN B2005800007387 A CNB2005800007387 A CN B2005800007387A CN 200580000738 A CN200580000738 A CN 200580000738A CN 100429773 C CN100429773 C CN 100429773C
Authority
CN
China
Prior art keywords
module
mentioned
wireless communication
semiconductor chip
communication unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005800007387A
Other languages
English (en)
Other versions
CN1839474A (zh
Inventor
中谷诚一
三谷力
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1839474A publication Critical patent/CN1839474A/zh
Application granted granted Critical
Publication of CN100429773C publication Critical patent/CN100429773C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73207—Bump and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/0651—Wire or wire-like electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06558—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having passive surfaces facing each other, i.e. in a back-to-back arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/107—Indirect electrical connections, e.g. via an interposer, a flexible substrate, using TAB
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10098—Components for radio transmission, e.g. radio frequency identification [RFID] tag, printed or non-printed antennas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10431—Details of mounted components
    • H05K2201/10507—Involving several components
    • H05K2201/1053—Mounted components directly electrically connected to each other, i.e. not via the PCB

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Transceivers (AREA)

Abstract

提供一种能够实现小型化及制造成本的降低、且难以受到电磁波噪声的影响的模块及使用它的安装构造体。该模块(1)具有基板(12)、和安装在基板(12)上且分别包含半导体芯片(10)的多个半导体封装(11a、11b)；多个半导体封装(11a、11b)分别包括利用无线通信进行多个半导体封装(11a、11b)间的半导体芯片(10)之间的信号收发的第1无线通信元件(16)；第1无线通信元件(16)与半导体芯片(10)独立地构成。

Description

模块及使用它的安装构造体
技术领域
本发明涉及包含多个半导体封装的模块及使用它的安装构造体。
背景技术
随着近年来的电子设备的小型化、高功能化，包含在电子设备中的半导体芯片的多管脚化、及构成电子设备的各种电子部件的小型化不断发展，装载它们的基板的布线数及布线密度飞跃性地增大。特别是，半导体芯片的端子数及从半导体芯片引出的导线数迅速增加，由此，半导体芯片的端子的窄间距化、及安装半导体芯片的基板(印刷电路板)的布线的窄间距化不断发展。因此，半导体芯片的焊接在技术上不断变得困难。此外，由于安装半导体芯片的基板的多层化及微细化不断发展，所以基板的高成本化越发显著化。
此外，为了对应电子部件的高密度安装化、以及安装电子部件的基板的高功能化的要求，使用在1个芯片的半导体器件上搭载许多功能的***LSI(Large Scale Integrated Circuit，大规模集成电路)的***集成芯片(SOC)技术、及由1个以上的半导体芯片和多个有源器件及无源器件构成1个封装品的***集成封装(SIP)技术正在积极地研究开发中。
例如，在专利文献1中提出了在1个IC(Integrated Circuit，集成电路)芯片中内置驱动元件和控制电路的半导体装置。
图11表示在专利文献1中提出的半导体装置的结构图。如图11所示，半导体装置200具有基板201、在基板201上分开设置的驱动用IC芯片202及控制用IC芯片203。
在驱动用IC芯片202中内置着收发用天线202a、与收发用天线202a连接的RF(Radio Frequency，射频)电路202b、驱动元件202c、根据由RF电路202b解调的信号来检测用于驱动驱动元件202c的信号的控制信号检测电路202d、和在驱动元件202c中发生了异常时检测该异常的异常检测电路202e。另一方面，在控制用IC芯片203中内置有收发用天线203a、与收发用天线203a连接的RF电路203b、和控制内置于驱动用IC芯片202中的驱动元件202c的控制电路203c。
半导体装置200经由收发用天线202a、203a进行驱动用IC芯片202和控制用IC芯片203之间的信号的传送，所以能够通过无线在IC芯片间进行信号的传送。由此，能够省略用于形成IC芯片间的信号的传送路径的布线等，所以能够使整个半导体装置小型化。进而，通过将驱动元件202c和控制电路203c内置于不同的IC芯片中，能够防止从驱动元件202c产生的热量传输递到控制电路203c，所以能够防止控制电路203c的性能的降低。
专利文献1：日本特开2003-218315号公报。
但是，在专利文献1中提出的半导体装置200中，在各IC芯片202、203中需要执行半导体原来的功能即运算、存储等功能的块以外，还需要用于进行信号传送的电路块，所以制造成本变高。并且，不能使用已有的半导体芯片，缺乏通用性。
进而，由于在IC芯片202、203内分别设有RF电路202b、203b，所以电磁波噪声对驱动元件202c、控制电路203c的影响增大。此外，即使可以用异常检测电路202e检测到因电磁波噪声引起的异常，也不能改变在发生异常期间半导体装置200不能正常工作的情况。
发明内容
本发明提供一种不仅能够实现小型化及制造成本的降低、而且不易受到电磁波噪声的影响的模块及使用它的安装构造体。
本发明的模块，具有基板、和安装在基板上且分别包含半导体芯片的多个半导体封装，而且，上述多个半导体封装分别包含利用无线通信进行上述多个半导体封装间的上述半导体芯片之间的信号收发的第1无线通信元件；上述第1无线通信元件与上述半导体芯片独立地构成。
本发明的安装构造体是包含上述本发明的模块的安装构造体。
根据本发明的模块，由于多个半导体封装分别包含利用无线通信进行上述多个半导体封装间的上述半导体芯片之间的信号收发的第1无线通信元件，所以能够减少布线的数量。由此，能够提供可小型化的模块。此外，由于第1无线通信元件与半导体芯片独立地构成，所以第1无线通信元件及半导体芯片两者都可以使用已有的产品。由此能够实现模块的制造成本的降低。此外，由于第1无线通信元件与半导体芯片独立地构成，所以能够降低电磁波噪声对半导体芯片的影响。此外，本发明的安装构造体由于包含上述本发明的模块，所以能够提供不仅能够实现小型化及制造成本的降低、并且难以受到电磁波噪声的影响的安装构造体。
附图说明
图1是本发明第1实施方式涉及的模块的示意剖视图。
图2是从基板侧观察包含在本发明第1实施方式涉及的模块中的半导体封装的概略俯视图。
图3是本发明第2实施方式涉及的模块的示意剖视图。
图4是从基板侧观察包含在本发明第2实施方式涉及的模块中的中介层(interposer)的概略俯视图。
图5是本发明第3实施方式涉及的模块的示意剖视图。
图6是本发明第4实施方式涉及的安装构造体的示意剖视图。
图7是使用了多个本发明的一实施方式涉及的模块的便携电话的概略立体图。
图8是示意地表示组合了多个在图7的便携电话中使用的本发明的一实施方式涉及的模块的状态的概略立体图。
图9是使用了多个本发明的一实施方式涉及的模块的笔记本电脑的概略立体图。
图10是示意地表示组合了多个在图9的笔记本电脑中使用的本发明的一实施方式涉及的模块的状态的概略立体图。
图11是以往的半导体装置的结构图。
具体实施方式
本发明的模块具有基板、和安装在该基板上且分别包含半导体芯片的多个半导体封装。
对于构成基板的基材没有特别的限制，例如可以使用厚度为100～500μm程度的玻璃环氧基材等。对于半导体芯片也没有特别的限制，例如可以使用已有的IC芯片和LSI芯片等。对于半导体封装的个数，只要是2个以上就可以，只要考虑到使用模块的电子设备的性能等而适当地设定就可以。
并且，在本发明的模块中，多个半导体封装分别具有以无线通信进行多个半导体封装间的半导体芯片彼此的信号收发的第1无线通信元件。由此，能够减少布线的数量，所以能够实现模块的小型化。
第1无线通信元件没有特别的限制，例如可以使用已有的RF(Radio Frequency)元件等。对于第1无线通信元件的形状也没有特别的限制，可以使用平板状、棒状、球状等各种形状。为了使模块的小型化变得更容易，作为第一无线通信元件，优选使用例如能够以可在1～20mm的范围内到达的功率(例如1～100mW)收发电磁波的无线通信元件。此外，在使用RF元件作为第1无线通信元件的情况下，为了提高信号的传送速度，优选使用能够收发频率为2～20GHz的RF信号的RF元件。
此外，在本发明的模块中，第1无线通信元件与半导体芯片独立地构成。由此，第1无线通信元件与半导体芯片两者都可以使用已有的产品，所以能够降低模块的制造成本。进而，还能够降低电磁波噪声对半导体芯片的影响。另外，所谓的“独立地构成”，是指第1无线通信元件与半导体芯片分别单独制造。
此外，在第1无线通信元件与半导体芯片两者都使用已有的产品的情况下，通过将它们作为规格标准而通用化，能够实现产品成本的降低。
此外，由于第1无线通信元件与半导体芯片独立地构成，所以能够仅通过分别更换第1无线通信元件或半导体芯片，就能够简单地进行在以往的半导体装置(参照图11)中难以进行的维修。
另外，通过本发明的模块中的第1无线通信元件进行的无线通信，与通过信息通信设备(例如笔记本电脑、台式电脑、便携电话等)进行的无线通信(例如无线局域网、蓝牙等)在本质上不同。这是因为，通过那样的信息通信设备进行的无线通信仅是接收来自设备外部的信息、或发出来自设备内部的信息，而不是如本发明所述进行模块内的各半导体封装中包含的半导体芯片之间的信号收发的无线通信。
当然，也可以构成为，组合多个本发明的模块，同时利用进行模块内的半导体芯片之间的信号收发的无线通信、和进行模块间的半导体芯片之间的信号收发的无线通信。对于这样的例子在后面叙述。
本发明的模块也可以是多个半导体封装还分别具有封固半导体芯片的树脂部的模块。这是因为能够防止半导体芯片的劣化。此外，在该情况下，第1无线通信元件也可以设置在树脂部的内部或表面。这是因为，由于第1无线通信元件与半导体芯片接近，所以能够更可靠地进行半导体芯片之间的信号收发。特别是，如果第1无线通信元件被设置在树脂部的内部，能够防止第1无线通信元件的劣化，所以是优选的。另外，在树脂部中使用的树脂材料没有特别的限制，例如可以使用环氧树脂及酚醛树脂等。此外，树脂部的厚度例如在0.2～2mm的范围内。
本发明的模块也可以是多个半导体封装还分别具有屏蔽电磁波的屏蔽层的模块。这是因为能够降低电磁波噪声。屏蔽层只要是包含屏蔽电磁波的材料的层就可以，而没有特别的限制，例如可以使用由铜、铝、镍等金属材料构成的金属层(金属箔、镀层等)、由铁素体等构成的磁性材料层、将金属或磁性材料等分散在树脂中的复合材料层等。屏蔽层的厚度例如在5～50μm的范围内。
上述屏蔽层也可以设在第1无线通信元件的表面的一部分。由此，在第1无线通信元件中，电磁波仅经由未设置屏蔽层的部位输入输出，所以能够仅收发所需的电磁波。
本发明的模块也可以是多个半导体封装还分别具有用于载置半导体芯片的中介层的模块。根据该结构，能够在将半导体芯片载置在中介层上的状态下检查半导体芯片的性能，所以能够在将半导体封装安装到基板上之前判断半导体芯片的性能的优劣。由此，能够提高模块的制造工序的成品率。此外，在这种情况下，第1无线通信元件也可以设置在中介层的内部或表面。这是因为，能够在将半导体封装安装到基板上之前，不仅检查半导体芯片的性能、还能够检查第1无线通信元件的性能。特别是，如果第1无线通信元件设置在中介层的内部，则能够有效地利用中介层上的安装面界，所以是优选的。另外，作为中介层，可以使用玻璃环氧基板、芳香族聚酰胺环氧基板等刚性基板、或使用了聚酰亚胺膜等的柔性基板、还有形成了保护电路、检查电路等的硅半导体基板等。此外，中介层的厚度例如在100～500μm左右的范围内。
此外，也可以是，安装半导体封装的基板是仅在基材的一个主面上形成了导体图案的单面基板、或仅在基材的两个主面上形成了导体图案的两面基板，本发明的模块也可以是多个半导体封装分别安装在上述导体图案上的模块。这是因为模块的小型化、及模块的制造成本的降低变得更容易。在这种情况下，上述导体图案也可以由从由电源端子及接地端子构成的组中选择的至少1个端子构成。这是因为，模块的小型化、及模块的制造成本的降低变得更加容易。另外，在上述端子的构成材料可以使用铜或金等惯用的导电材料。
此外，本发明的模块也可以是还包含以无线通信进行与分别包含在多个半导体封装中的第1无线通信元件中的至少1个进行信号收发的第2无线通信元件、和与第2无线通信元件电连接的电子部件的模块。这是因为，由于能够经由第1无线通信元件及第2无线通信元件以无线通信进行包含在半导体封装中的半导体芯片与上述电子部件之间的信号的收发，所以通过省略半导体芯片与上述电子部件之间的布线等，能够使模块的小型化变得更容易。另外，作为第2无线通信元件，可以使用与上述第1无线通信元件相同的元件。此外，上述电子部件没有特别的限制，例如可以使用半导体芯片等有源器件及电容器等无源器件等。
本发明的安装构造体包含上述的本发明的模块。由此，与上述同样，能够提供不仅可实现小型化及制造成本的降低、而且难以受到电磁波噪声的影响的安装构造体。以下，详细说明本发明的实施方式。
【第1实施方式】
首先，参照附图说明本发明的第1实施方式涉及的模块。所参照的图1是第1实施方式涉及的模块的示意剖视图。此外，所参照的图2是从基板侧观察包含在第1实施方式涉及的模块中的半导体封装的概略俯视图。
如图1所示，第1实施方式涉及的模块1具有基板12、和安装在基板12上且分别包含半导体芯片10的多个半导体封装11a、11b……(以下，简单称作“半导体封装11a、11b”)。
半导体芯片10通过接合线13和由焊锡等构成的导电部14，与在构成基板12的基材12a的一个主面上形成的端子12b电连接。另外，作为端子12b，例如可以使用从由电源端子和接地端子构成的组中选择的至少1个端子。
并且，半导体封装11a、11b分别具有以无线通信进行半导体封装11a、11b间的半导体芯片10之间的信号收发的第1无线通信元件16。该第1无线通信元件16通过由铜、焊锡等导电材料构成的导电部17，与半导体芯片10电连接。并且，在进行分别包含在半导体封装11a、11b中的半导体芯片10之间的信号收发的情况下，是在包含于半导体封装11a中的第1无线通信元件16、和包含于半导体封装11b中的第1无线通信元件16之间通过无线通信收发信号来进行的。即，通过第1无线通信元件16并利用无线通信进行半导体芯片10之间的信号收发。此外，对于分别包含在模块1内的不相邻的各个半导体封装(未图示)中的半导体芯片10之间的信号收发，也与上述同样地进行。由此，由于能够减少布线的数量，所以能够实现模块1的小型化。另外，为了可靠地进行无线通信，相互进行收发的第1无线通信元件16间的间隔最好是5mm以下。
此外，第1无线通信元件16与半导体芯片10独立地构成。由此，第1无线通信元件16及半导体芯片10两者都可以使用已有的产品，所以能够实现模块1的制造成本的降低。进而，还能够缓和由第1无线通信元件16进行的无线通信给半导体芯片10的内部电路带来的电磁波噪声等影响。
此外，各个半导体封装11a、11b还包含封固半导体芯片10的树脂部18。由此，能够防止半导体芯片10的劣化。
此外，在模块1中利用无线通信进行半导体芯片10之间的信号收发，所以能够使端子12b的数量比以往少。由此，与以往相比，能够扩大端子12b的间隔，所以半导体封装11a、11b向基板12的安装(例如通过钎焊的安装)变得容易。由此，能够提高模块1的制造阶段的成品率，并且制造成本的降低变得更容易。
此外，在模块1中，基板12是仅在基材12a的一个主面上形成由端子12b及布线12c构成的导体图案的单面基板，各半导体封装11a、11b分别安装在端子12b上。由此，不再需要使用厚重且昂贵的多层基板等，所以模块1的小型化和模块1的制造成本的降低变得更容易。
此外，如图2所示，在与第1无线通信元件16的基板12面对的表面的一部分，设有屏蔽电磁波的屏蔽层19(图2中的带阴影的部位)。由此，能够降低电磁波噪声，并且在第1无线通信元件16中，由于仅经由未设置屏蔽层19的部位16a输入输出电磁波，所以能够仅收发所需的电磁波。
此外，根据模块1，由于能够利用无线通信进行包含在各半导体封装11a、11b中的半导体芯片10之间的信号收发，所以能够使半导体封装11a、11b联动工作。
接着，说明本实施方式的详细结构的一例。半导体芯片10的外形是一边为2～15mm的长方形，其厚度为0.1～0.5mm。作为半导体芯片10，例如可以使用已有的LSI芯片等。树脂部18的外形是一边为3～20mm的长方形，其厚度为0.3～1.0mm。第1无线通信元件16的外形是一边为2～4mm的长方形，其厚度为0.1～0.5mm。作为第1无线通信元件16，可以使用已有的RF元件等。另外，最好在第1无线通信元件16上连接着天线。
另外，在一般的模块中，由于通过金属布线进行信号的传送，所以信号的传送时钟速度最大为200MHz左右，但在本实施方式中，由于通过无线通信进行信号的传送，所以能够使信号的传送时钟速度为例如1000MHz以上(举一个例子，约1～10GHz)。
以上说明了本发明的第1实施方式涉及的模块1，但本发明并不限于上述实施方式。例如也可以做成将第1无线通信元件设置在树脂部的内部的模块。此外，也可以不使用树脂部而构成模块。
【第2实施方式】
接着，参照附图说明本发明的第2实施方式涉及的模块。所参照的图3是第2实施方式涉及的模块的示意剖视图。另外，对于与图1相同的构件赋予相同的标号，省略其说明。
如图3所示，第2实施方式涉及的模块2具有基板12、和安装在基板12上且分别包含有半导体芯片20的多个半导体封装21a、21b……(以下，简单称作“半导体封装21a、21b”)。并且，各半导体封装21a、21b还包含载置半导体芯片20的中介层22。
半导体芯片20包含半导体芯片20a、和层叠在半导体芯片20a上的半导体芯片20b。半导体芯片20a通过由焊锡等构成的导电部23安装在中介层22上。半导体芯片20b通过接合线13安装在中介层22上。并且，导电部23和接合线13通过设在中介层22上的导体图案(未图示)电连接。由此，半导体芯片20a和半导体芯片20b通过导电部23、设在中介层22上的导体图案、以及接合线13电连接。此外，设在中介层22上的导体图案通过设在中介层22上的通孔导体及导电部14，与端子12b电连接。
并且，半导体封装21a、21b分别具有利用无线通信进行半导体封装21a、21b间的半导体芯片20之间的信号收发的第1无线通信元件16。该第1无线通信元件16通过导电部17与半导体芯片20b电连接。由此，与上述第1实施方式涉及的模块1(参照图1)相同，能够以无线通信进行包含在各半导体封装21a、21b中的半导体芯片20之间的信号收发，所以通过省略布线等，能够实现模块2的小型化。
此外，第1无线通信元件16与半导体芯片20独立地构成。由此，与上述第1实施方式涉及的模块1(参照图1)相同，能够实现模块2的制造成本的降低。进而，还能够缓和由第1无线通信元件16进行的无线通信给半导体芯片20的内部电路带来的电磁波噪声等影响。
此外，由于各半导体封装21a、21b还包含用于载置半导体芯片20的中介层22，所以可以在将半导体芯片20载置在中介层22上的状态下检查半导体芯片20的性能。由此，可以在将半导体封装21a、21b安装到基板12之前，判断半导体芯片20的性能优劣。由此，能够提高模块2的制造工序中的成品率。
此外，各半导体封装21a、21b还包含形成在中介层22上的、封固半导体芯片20及第1无线通信元件16的树脂部18。由此，能够防止半导体芯片20及第1无线通信元件16的劣化。
以上说明了本发明的第2实施方式涉及的模块2，但本发明并不限于上述实施方式。例如在上述实施方式中，使用层叠了2个半导体芯片的半导体芯片，但也可以使用由1个半导体芯片构成的半导体芯片。
此外，第1无线通信元件16也可以设置在中介层22的内部或表面。特别是，如果第1无线通信元件16设置在中介层22的内部，则能够有效地利用中介层22上的安装面积，所以是优选的。此外，如从基板12侧观察中介层22的概略俯视图即图4所示，也可以将第1无线通信元件16设在中介层22的内部，进一步在中介层22的表面的一部分(在图4中是侧面的一部分)设置屏蔽电磁波的屏蔽层25(图4中的添加了阴影的部位)。由此，能够降低电磁波噪声，并且，在中介层22中，由于电磁波仅经由未设置屏蔽层25的部位输入输出，所以能够仅收发所需的电磁波。
【第3实施方式】
接着，参照附图说明本发明的第3实施方式涉及的模块。所参照的图5是第3实施方式涉及的模块的示意剖视图。另外，对与图3相同的构件赋予相同的标号，省略其说明。
如图5所示，第3实施方式涉及的模块3包括：利用无线通信与包含在各半导体封装21a、21b中的第1无线通信元件16中的至少1个进行信号收发的第2无线通信元件30、和与第2无线通信元件30电连接的电子部件31。第2无线通信元件30通过由铜、焊锡等导电材料构成的导电部32安装在基板12的布线12c上。电子部件31通过未图示的导电材与第2无线通信元件30电连接，并且，被安装在基板12的布线12c上。其他与上述第2实施方式涉及的模块2(参照图3)相同。由此，通过第3实施方式涉及的模块3，也能够发挥与第2实施方式涉及的模块2相同的效果。
此外，模块3通过上述结构，能够以无线通信、经由第1无线通信元件16和第2无线通信元件30进行包含于半导体封装21a、21b的半导体芯片20中的至少1个与电子部件31之间的信号收发。由此，能够省略半导体芯片20与电子部件31之间的布线，所以模块3的小型化变得更容易。
【第4实施方式】
接着，参照附图说明本发明的第4实施方式涉及的安装构造体。所参照的图6是第4实施方式涉及的安装构造体的示意剖视图。另外，对与图1相同的构件赋予相同的标号，省略其说明。
如图6所示，第4实施方式涉及的安装构造体包括：本发明的一实施方式涉及的模块40、电路基板41、和将模块40与电路基板41电连接的电源连接器42。
模块40具有基板12、和安装在基板12上且分别具有半导体芯片10的半导体封装43a、43b。此外，模块40还包括安装在基板12的布线12c上的电子部件44、45。其中，电子部件45通过由铜、焊锡等导电材料构成的导电部50安装在布线12c上，在该电子部件45与基材12a之间填充着由环氧树脂构成的封固树脂51。
各半导体封装43a、43b具有以无线通信进行半导体封装43a、43b间的半导体芯片10之间的信号收发的第1无线通信元件16。该第1无线通信元件16通过导电部17与半导体芯片10电连接。半导体芯片10通过导电部14与端子12b电连接。
电路基板41包括基板41a；利用无线通信与包含在半导体封装43a中的第1无线通信元件16进行信号收发的第3无线通信元件46a；和利用无线通信与包含在半导体封装43b中的第1无线通信元件16进行信号收发的第3无线通信元件46b。第3无线通信元件46a、46b分别与包含在半导体封装43a、43b中的第1无线通信元件16、16面对着配置，并且通过由铜、焊锡等导电材料构成的导电部47安装在基板41a的布线411a上。
此外，电路基板41还包括安装在基板41a的布线411a上的电子部件48a、48b、49。其中，电子部件48a、48b通过未图示的导电材与第3无线通信元件46a、46b电连接。此外，电子部件49与上述电子部件45同样，通过导电部50安装在布线411a上，在该电子部件49与基板41a之间填充有封固树脂51。
如上所述构成的安装构造体4与上述第1～第3实施方式同样，能够利用无线通信进行包含在各半导体封装43a、43b中的半导体芯片10之间的信号收发。此外，能够利用无线通信经由第1无线通信元件16及第3无线通信元件46a进行包含在半导体封装43a中的半导体芯片10与电子部件48a之间的信号收发。进而，能够利用无线通信经由第1无线通信元件16及第3无线通信元件46b进行包含在半导体封装43b中的半导体芯片10与电子部件48b之间的信号收发。由此，能够减少布线的数量，所以能够实现安装构造体4的小型化。
此外，如上述那样，能够利用无线通信进行包含在各个半导体封装43a、43b中的半导体芯片10与电子部件48a或电子部件48b之间的信号收发，所以如图6所示，能够仅通过电源连接器42将模块40与电路基板41相互电连接。即，能够省略模块40与电路基板41之间的信号传送用的连接(布线、通孔导体等)。
此外，根据安装构造体4，包含本发明的一实施方式涉及的模块40，所以与上述同样地，能提供可实现制造成本的降低、并且难以受到电磁波噪声的影响的安装构造体。另外，电子部件44、45、48a、48b、49没有特别的限制，例如可以使用半导体芯片等有源器件及天线等无源器件。
以上说明了本发明的第4实施方式涉及的安装构造体4，但本发明并不限于上述实施方式。例如也可以做成还包含封固半导体芯片的树脂部的安装构造体。此外，也可以做成包含多个本发明的一实施方式涉及的模块的安装构造体。
【第5实施方式】
接着，作为本发明的第5实施方式，对组合了多个本发明的一实施方式涉及的模块而使用到便携电话中的例子进行说明。所参照的图7是使用了多个本发明的一实施方式涉及的模块的便携电话的概略立体图。此外，所参照的图8是示意地表示组合了多个在图7的便携电话中使用的本发明的一实施方式涉及的模块的状态的概略立体图。另外，在图8中，省略了各模块中的第1无线通信元件以外的构件。此外，对于与图1的构件赋予相同的标号，省略其说明。
如图7所示，便携电话101包括第1壳体部60、第2壳体部61、配置在第1壳体部60与第2壳体部61之间的铰链部62、设在第1壳体部60上的键单元(输入机构)63、和设在第2壳体部61上的液晶单元(显示机构)64。
在第1壳体部60的内部，如图8所示，设有控制键单元63的模块65、控制外部通信部(未图示)的模块66、和作为逻辑模块的模块67。此外，在第2壳体部61的内部，设有控制液晶单元64的模块68。模块65、66、67、68是将有述第1～第3实施方式中的任一个方式涉及的模块形成为薄片状而成的。另外，在图8中，为了使说明变得容易理解，示出了在模块65、66、67、68中包含多个的第1无线通信元件16中的各1个。
模块65、66、67、68都是上述第1～第3实施方式中的任一个方式涉及的模块，所以如上所述地通过第1无线通信元件16以无线通信进行模块内的半导体芯片(未图示)之间的信号收发。由此，能够省略模块65、66、67、68内的布线等，所以能够实现便携电话101的小型化。
此外，如果具有对于各模块65、66、67、68间(例如模块65与模块66之间，等)的半导体芯片之间的信号收发也利用无线通信进行的结构，则能够省略模块间的布线等，所以便携电话101的小型化变得更容易。作为这样的结构，例如可以使用具有利用无线通信进行模块内的半导体芯片之间的信号收发的功能、和利用无线通信进行模块间的半导体芯片之间的信号收发的功能的元件，作为第1无线通信元件16；也可以是，除了第1无线通信元件16以外，还单独在各模块中设置利用无线通信进行模块间的半导体芯片之间的信号收发的无线通信元件。另外，作为利用无线通信进行模块间的半导体芯片之间的信号收发的无线通信元件，为了可靠地进行无线通信，最好是能够以例如1～100mW程度的功率收发电磁波的无线通信元件。
另外，在以往的折叠式便携电话中，由于在例如液晶单元与键单元之间存在铰链部，所以，对于将液晶单元与键单元用物理布线连接，有各种的制约。所以限制了设计的自由度。另一方面，如上所述，如果能够利用无线通信进行模块间的半导体芯片之间的信号收发，就能够提供设计自由度较高的折叠式便携电话。
【第6实施方式】
接着，作为本发明的第6实施方式，对组合了多个本发明的一实施方式涉及的模块而使用到笔记本电脑中的例子进行说明。所参照的图9是使用了多个本发明的一实施方式涉及的模块的笔记本电脑的概略立体图。此外，所参照的图10是示意地表示组合了多个在图9的笔记本电脑中使用的本发明的一实施方式涉及的模块的状态的概略立体图。另外，在图10中，省略了各模块中的第1无线通信元件以外的构件。此外，对于与图7及图8相同的构件赋予相同的标号，省略其说明。
如图9所示，笔记本电脑102包括第1壳体部60、第2壳体部61、配置在第1壳体部60与第2壳体部61之间的铰链部62、设在第1壳体部60上的键单元63、和设在第2壳体部61上的液晶单元64。
在第1壳体部60的内部，如图10所示，设有控制键单元63的模块65、作为存储模块的模块69、和控制电源部(未图示)的模块70。此外，在第2壳体部61的内部，设有控制液晶单元64的模块68。模块65、68、69、70是将上述第1～第3实施方式中的任一个方式涉及的模块形成为薄片状而形成的。另外，在图10中，为了使说明变得容易理解，分别示出了模块65、68、69、70中所包含多个的第1无线通信元件16中的各1个。
模块65、68、69、70都是上述第1～第3实施方式中的任一个方式涉及的模块，所以如上所述，通过第1无线通信元件16利用无线通信进行模块内的半导体芯片(未图示)之间的信号收发。由此，能够省略模块65、68、69、70内的布线等，所以能够实现笔记本电脑102的小型化。
此外，如果具有对于各模块65、68、69、70间(例如模块65与模块68之间，等)的半导体芯片之间的信号收发也利用无线通信进行的结构，则能够省略模块间的布线等，所以笔记本电脑102的小型化变得更容易。作为这样的结构，例如既可以使用具有利用无线通信进行模块内的半导体芯片之间的信号收发的功能、和利用无线通信进行模块间的半导体芯片之间的信号收发的功能的元件，作为第1无线通信元件16；也可以是，除了第1无线通信元件16以外，还单独在各模块中设置利用无线通信进行模块间的半导体芯片之间的信号收发的无线通信元件。
另外，在图7及图9所示的例子中，作为显示机构的液晶单元64也可以是有机EL(Electro Luminescence，电致发光)单元等其他显示装置。
工业实用性
本发明的模块及安装构造体对于便携电话及笔记本电脑等要求小型化及高功能化的电子设备是有实用性的。

Claims (11)

1、一种模块，具有基板、和安装在上述基板上且分别包含半导体芯片的多个半导体封装，其特征在于，
上述多个半导体封装分别包含利用无线通信进行上述多个半导体封装间的上述半导体芯片之间的信号收发的第1无线通信元件；
上述第1无线通信元件与上述半导体芯片独立地构成。
2、如权利要求1所述的模块，其特征在于，
上述多个半导体封装分别还包括封固上述半导体芯片的树脂部。
3、如权利要求1所述的模块，其特征在于，
上述多个半导体封装分别还包括封固上述半导体芯片的树脂部；
上述第1无线通信元件设在上述树脂部的内部或表面。
4、如权利要求1所述的模块，其特征在于，
上述多个半导体封装分别还包括屏蔽电磁波的屏蔽层。
5、如权利要求1所述的模块，其特征在于，
上述多个半导体封装分别还包括设在上述第1无线通信元件的表面的一部分上的、屏蔽电磁波的屏蔽层。
6、如权利要求1所述的模块，其特征在于，
上述多个半导体封装分别还包括载置上述半导体芯片的中介层。
7、如权利要求1所述的模块，其特征在于，
上述多个半导体封装分别还包括载置上述半导体芯片的中介层；
上述第1无线通信元件设在上述中介层的内部或表面。
8、如权利要求1所述的模块，其特征在于，
上述基板是仅在基材的一个主面上形成了导体图案的单面基板、或者仅在基材的两个主面上形成了导体图案的两面基板；
上述多个半导体封装分别安装在上述导体图案上。
9、如权利要求8所述的模块，其特征在于，
上述导体图案由从电源端子及接地端子构成的组中选择的至少1个端子构成。
10、如权利要求1所述的模块，其特征在于，
还包括：第2无线通信元件，利用无线通信，与分别包含在上述多个半导体封装中的上述第1无线通信元件的至少一个进行信号收发；以及电子部件，与上述第2无线通信元件电连接。
11、一种安装构造体，包含权利要求1所述的模块。
CNB2005800007387A 2004-01-28 2005-01-20 模块及使用它的安装构造体 Expired - Fee Related CN100429773C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004019584 2004-01-28
JP019584/2004 2004-01-28

Publications (2)

Publication Number Publication Date
CN1839474A CN1839474A (zh) 2006-09-27
CN100429773C true CN100429773C (zh) 2008-10-29

Family

ID=34823722

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800007387A Expired - Fee Related CN100429773C (zh) 2004-01-28 2005-01-20 模块及使用它的安装构造体

Country Status (5)

Country Link
US (2) US7667974B2 (zh)
EP (1) EP1667227A4 (zh)
JP (2) JP4406403B2 (zh)
CN (1) CN100429773C (zh)
WO (1) WO2005074029A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102272919A (zh) * 2009-01-07 2011-12-07 索尼公司 半导体器件及其制造方法、毫米波电介质内传输装置及其制造方法、以及毫米波电介质内传输***

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4406403B2 (ja) * 2004-01-28 2010-01-27 パナソニック株式会社 モジュール及びこれを用いた実装構造体
WO2008151422A1 (en) * 2007-06-11 2008-12-18 Darwin Dimensions Inc. Dynamic user interface for inheritance based avatar generation
WO2008151424A1 (en) * 2007-06-11 2008-12-18 Darwin Dimensions Inc. Metadata for avatar generation in virtual environments
US9407311B2 (en) 2011-10-21 2016-08-02 Keyssa, Inc. Contactless signal splicing using an extremely high frequency (EHF) communication link
US8554136B2 (en) * 2008-12-23 2013-10-08 Waveconnex, Inc. Tightly-coupled near-field communication-link connector-replacement chips
JP5446718B2 (ja) * 2009-10-22 2014-03-19 ソニー株式会社 半導体装置、半導体装置の製造方法、無線伝送システム
RU2503673C2 (ru) 2009-10-27 2014-01-10 Дельта-Флай Фарма, Инк. Новое производное 5-фторурацила
JP5556294B2 (ja) * 2010-03-25 2014-07-23 日本電気株式会社 半導体装置
KR101678055B1 (ko) * 2010-06-15 2016-11-22 삼성전자 주식회사 전자파 간섭 제거 장치 및 이를 포함하는 반도체 패키지
FR2969398B1 (fr) * 2010-12-20 2013-01-11 St Microelectronics Sa Emetteur-recepteur integre en ondes millimetriques
FR2969397B1 (fr) 2010-12-20 2013-09-06 St Microelectronics Crolles 2 Emetteur-recepteur integre en ondes millimetriques
US8897700B2 (en) 2011-06-15 2014-11-25 Keyssa, Inc. Distance measurement using EHF signals
ITVI20120145A1 (it) 2012-06-15 2013-12-16 St Microelectronics Srl Struttura comprensiva di involucro comprendente connessioni laterali
CN104641505B (zh) 2012-08-10 2018-06-19 凯萨股份有限公司 用于ehf通信的电介质耦合***
CN106330269B (zh) 2012-09-14 2019-01-01 凯萨股份有限公司 具有虚拟磁滞的无线连接
US9531425B2 (en) 2012-12-17 2016-12-27 Keyssa, Inc. Modular electronics
JP2014195059A (ja) * 2013-02-27 2014-10-09 Shinko Electric Ind Co Ltd 電子装置
WO2014149107A1 (en) 2013-03-15 2014-09-25 Waveconnex, Inc. Ehf secure communication device
KR101700789B1 (ko) 2013-03-15 2017-01-31 키사, 아이엔씨. 극고주파 통신 칩
DE102014213037B4 (de) * 2013-07-04 2016-02-18 Technische Universität Dresden System zur Übertragung von Daten mit mindestens zwei zur Datenübertragung und Datenverarbeitung ausgebildeten Elementen
CN105393353B (zh) * 2014-06-30 2018-06-15 华为技术有限公司 一种3d堆叠器件、芯片及通信方法
CN104465547B (zh) * 2014-12-10 2017-06-30 华进半导体封装先导技术研发中心有限公司 高频天线信号反射的封装结构及制造方法
US10083923B2 (en) * 2015-09-21 2018-09-25 Intel Corporation Platform with thermally stable wireless interconnects
CN108475231B (zh) * 2016-01-27 2021-01-05 华为技术有限公司 一种内存访问方法、装置及***架构
CN112740401B (zh) * 2018-09-20 2023-11-03 三菱电机株式会社 功率半导体模块以及复合模块
US11581272B2 (en) 2019-03-22 2023-02-14 Intel Corporation Contactless high-frequency interconnect

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0425046A (ja) * 1990-05-16 1992-01-28 Nec Corp ウェハースケール集積回路
JPH11135712A (ja) * 1997-10-27 1999-05-21 Nec Kyushu Ltd 半導体装置およびその製造方法
JP2003218315A (ja) * 2002-01-21 2003-07-31 Denso Corp 半導体装置
CN1684258A (zh) * 2003-06-30 2005-10-19 因芬尼昂技术股份公司 用来在一个封装内的电路单元之间进行无线数据交换的方法,和用来执行该方法的电路布置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142698A (en) * 1988-06-08 1992-08-25 Nec Corporation Microwave integrated apparatus including antenna pattern for satellite broadcasting receiver
US5621913A (en) * 1992-05-15 1997-04-15 Micron Technology, Inc. System with chip to chip communication
JP3141692B2 (ja) 1994-08-11 2001-03-05 松下電器産業株式会社 ミリ波用検波器
JP2003282813A (ja) 1994-10-11 2003-10-03 Matsushita Electric Ind Co Ltd 半導体装置、メモリコア部チップ、メモリ周辺回路部チップおよび半導体メモリ装置
US5838603A (en) * 1994-10-11 1998-11-17 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip
US5754948A (en) * 1995-12-29 1998-05-19 University Of North Carolina At Charlotte Millimeter-wave wireless interconnection of electronic components
JPH09326465A (ja) 1996-06-06 1997-12-16 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH1168033A (ja) * 1997-08-15 1999-03-09 Matsushita Electric Ind Co Ltd マルチチップモジュール
US6249227B1 (en) * 1998-01-05 2001-06-19 Intermec Ip Corp. RFID integrated in electronic assets
JP4172070B2 (ja) * 1998-08-21 2008-10-29 沖電気工業株式会社 Ｌｓｉチップ及びｌｓｉチップ間の伝送方法
US6542720B1 (en) * 1999-03-01 2003-04-01 Micron Technology, Inc. Microelectronic devices, methods of operating microelectronic devices, and methods of providing microelectronic devices
JP4704543B2 (ja) 2000-05-16 2011-06-15 新日本無線株式会社 半導体装置
JP4848108B2 (ja) * 2001-09-14 2011-12-28 インターナショナル・ビジネス・マシーンズ・コーポレーション データ処理システム
DE10209204B4 (de) * 2002-03-04 2009-05-14 Infineon Technologies Ag Elektronisches Bauteil mit einem Stapel aus Halbleiterchips und Verfahren zur Herstellung desselben
JP2004022901A (ja) * 2002-06-18 2004-01-22 Seiko Epson Corp 光インターコネクション集積回路、光インターコネクション集積回路の製造方法、電気光学装置および電子機器
AU2003298595A1 (en) * 2002-10-08 2004-05-04 Chippac, Inc. Semiconductor stacked multi-package module having inverted second package
KR100548244B1 (ko) * 2003-03-14 2006-02-02 엘지전자 주식회사 저가형 능동 스마트 안테나 시스템 및 그 제조 방법
US20050026587A1 (en) * 2003-07-29 2005-02-03 Miskho Michael S. Radio frequency communication between devices via a power plane on a circuit board
US6998709B2 (en) * 2003-11-05 2006-02-14 Broadcom Corp. RFIC die-package configuration
JP4406403B2 (ja) * 2004-01-28 2010-01-27 パナソニック株式会社 モジュール及びこれを用いた実装構造体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0425046A (ja) * 1990-05-16 1992-01-28 Nec Corp ウェハースケール集積回路
JPH11135712A (ja) * 1997-10-27 1999-05-21 Nec Kyushu Ltd 半導体装置およびその製造方法
JP2003218315A (ja) * 2002-01-21 2003-07-31 Denso Corp 半導体装置
CN1684258A (zh) * 2003-06-30 2005-10-19 因芬尼昂技术股份公司 用来在一个封装内的电路单元之间进行无线数据交换的方法,和用来执行该方法的电路布置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102272919A (zh) * 2009-01-07 2011-12-07 索尼公司 半导体器件及其制造方法、毫米波电介质内传输装置及其制造方法、以及毫米波电介质内传输***
CN102272919B (zh) * 2009-01-07 2014-08-20 索尼公司 半导体器件及其制造方法、毫米波电介质内传输装置及其制造方法、以及毫米波电介质内传输***
US9705202B2 (en) 2009-01-07 2017-07-11 Sony Corporation Semiconductor device, method of manufacturing the same, in-millimeter-wave dielectric transmission device, method of manufacturing the same, and in-millimeter-wave dielectric transmission system

Also Published As

Publication number Publication date
JPWO2005074029A1 (ja) 2007-07-26
US20080048307A1 (en) 2008-02-28
US7859855B2 (en) 2010-12-28
EP1667227A4 (en) 2011-08-03
US20100133664A1 (en) 2010-06-03
EP1667227A1 (en) 2006-06-07
WO2005074029A1 (ja) 2005-08-11
JP5236590B2 (ja) 2013-07-17
JP4406403B2 (ja) 2010-01-27
JP2009246400A (ja) 2009-10-22
CN1839474A (zh) 2006-09-27
US7667974B2 (en) 2010-02-23

Similar Documents

Publication Publication Date Title
CN100429773C (zh) 模块及使用它的安装构造体
US10847435B2 (en) Semiconductor package structure and fabrication method thereof
US9699904B2 (en) Microelectronic device attachment on a reverse microelectronic package
CN104217240A (zh) 芯片卡模块、芯片卡以及用于制造芯片卡模块的方法
US20130201616A1 (en) Three dimensional passive multi-component structures
CN104937716B (zh) 高性能层叠封装体
US8338941B2 (en) Semiconductor packages and methods of fabricating the same
KR20190124280A (ko) 소비자 전자 제품용 메인보드 및 단말기
CN109379841A (zh) 电子设备及其电路板结构以及球栅阵列封装模组
CN100448104C (zh) 堆叠芯片柔性组件
US11315851B2 (en) Semiconductor package structure and fabrication method thereof
CN1972554A (zh) 薄型化电路板结构
CN101621053B (zh) ***级封装模块及具有其的移动终端
CN111511108A (zh) 一种电路板组件、终端
US10136516B2 (en) Microelectronic device attachment on a reverse microelectronic package
US11545435B2 (en) Double sided embedded trace substrate
KR102561946B1 (ko) 패키지 구조물
CN102376662A (zh) 具球栅阵列的***封装模块及其制造方法
CN114069204A (zh) 射频***及通信设备
CN116845569A (zh) 电子装置
JP2012216580A (ja) 通信モジュール
Christensen et al. Embedded Component 3D Packaging
CN104335341A (zh) 具有布置在内插器与衬底之间的微电子装置的微电子结构
KR20130030934A (ko) 메모리 모듈 및 이를 갖는 반도체 장치
WO2013028194A1 (en) Microelectronic package having a coaxial connector

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081029

Termination date: 20190120