CN100417022C - 半导体集成电路及其制造方法、相关电路、仪器和程序 - Google Patents
半导体集成电路及其制造方法、相关电路、仪器和程序 Download PDFInfo
- Publication number
- CN100417022C CN100417022C CNB031581277A CN03158127A CN100417022C CN 100417022 C CN100417022 C CN 100417022C CN B031581277 A CNB031581277 A CN B031581277A CN 03158127 A CN03158127 A CN 03158127A CN 100417022 C CN100417022 C CN 100417022C
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- integrated circuit
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 27
- 238000002425 crystallisation Methods 0.000 claims description 14
- 230000008025 crystallization Effects 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 8
- 230000003071 parasitic effect Effects 0.000 claims description 4
- 239000000284 extract Substances 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 13
- 238000013461 design Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 239000012141 concentrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000007600 charging Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000011218 segmentation Effects 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000000205 computational method Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/394—Routing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Evolutionary Computation (AREA)
- Computer Networks & Wireless Communication (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002265067A JP4320413B2 (ja) | 2002-09-11 | 2002-09-11 | 半導体集積回路およびレイアウト設計装置 |
JP265067/2002 | 2002-09-11 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101812124A Division CN101162481B (zh) | 2002-09-11 | 2003-09-11 | 半导体集成电路的布局设计仪器 |
CN2007101812143A Division CN101158992B (zh) | 2002-09-11 | 2003-09-11 | 半导体集成电路的布局设计方法 |
CNB200710181211XA Division CN100568504C (zh) | 2002-09-11 | 2003-09-11 | 半导体集成电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1501242A CN1501242A (zh) | 2004-06-02 |
CN100417022C true CN100417022C (zh) | 2008-09-03 |
Family
ID=31986564
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031581277A Expired - Lifetime CN100417022C (zh) | 2002-09-11 | 2003-09-11 | 半导体集成电路及其制造方法、相关电路、仪器和程序 |
CNB200710181211XA Expired - Lifetime CN100568504C (zh) | 2002-09-11 | 2003-09-11 | 半导体集成电路 |
CN2007101812143A Expired - Lifetime CN101158992B (zh) | 2002-09-11 | 2003-09-11 | 半导体集成电路的布局设计方法 |
CN2007101812124A Expired - Lifetime CN101162481B (zh) | 2002-09-11 | 2003-09-11 | 半导体集成电路的布局设计仪器 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200710181211XA Expired - Lifetime CN100568504C (zh) | 2002-09-11 | 2003-09-11 | 半导体集成电路 |
CN2007101812143A Expired - Lifetime CN101158992B (zh) | 2002-09-11 | 2003-09-11 | 半导体集成电路的布局设计方法 |
CN2007101812124A Expired - Lifetime CN101162481B (zh) | 2002-09-11 | 2003-09-11 | 半导体集成电路的布局设计仪器 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7294891B2 (zh) |
EP (3) | EP2320338A3 (zh) |
JP (1) | JP4320413B2 (zh) |
CN (4) | CN100417022C (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4320413B2 (ja) * | 2002-09-11 | 2009-08-26 | 日本電気株式会社 | 半導体集積回路およびレイアウト設計装置 |
CN1707774A (zh) * | 2004-06-10 | 2005-12-14 | 株式会社液晶先端技术开发中心 | 薄膜晶体管的电路、设计方法和程序、设计程序记录介质 |
JP4144892B2 (ja) * | 2006-08-28 | 2008-09-03 | キヤノン株式会社 | 光電変換装置及び撮像装置 |
KR101778816B1 (ko) * | 2009-09-24 | 2017-09-14 | 바스프 에스이 | 인쇄 가능한 극성 스위치 |
US8843869B1 (en) * | 2013-03-15 | 2014-09-23 | Globalfoundries Inc. | Via insertion in integrated circuit (IC) designs |
JP2017037920A (ja) * | 2015-08-07 | 2017-02-16 | シナプティクス・ジャパン合同会社 | セルライブラリ及び設計用データ |
US20180321822A1 (en) * | 2017-05-08 | 2018-11-08 | Skillcad, Inc. | Systems and methods for selection and operation on multiple groups of layout objects via a graphic-based layout editor |
US10475790B2 (en) * | 2017-09-28 | 2019-11-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Asymmetric gate pitch |
CN110852031B (zh) * | 2019-07-02 | 2023-05-16 | 深圳信息职业技术学院 | 一种实现棍棒图设计中有源区共用的方法 |
CN117665525B (zh) * | 2024-01-26 | 2024-04-05 | 杭州广立微电子股份有限公司 | 一种快速识别场效应晶体管泄漏路径的方法及装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5346487A (en) * | 1993-05-26 | 1994-09-13 | Paragon Trade Brands, Inc. | Disposable absorbent garment |
CN1139811A (zh) * | 1994-09-09 | 1997-01-08 | 三菱电机株式会社 | 具有改进的分级电源线结构的半导体存储装置 |
CN1166725A (zh) * | 1996-05-24 | 1997-12-03 | 三菱电机株式会社 | 半导体存储装置的输入电路 |
CN1239355A (zh) * | 1998-06-12 | 1999-12-22 | 日本电气株式会社 | 半导体集成电路装置 |
JP3125081B2 (ja) * | 1994-01-19 | 2001-01-15 | 日本電信電話株式会社 | 論理回路 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2839722B2 (ja) * | 1990-12-27 | 1998-12-16 | シャープ株式会社 | 集積回路装置 |
US5270657A (en) * | 1992-03-23 | 1993-12-14 | General Electric Company | Split gradient amplifier for an MRI system |
US5436578A (en) * | 1993-07-14 | 1995-07-25 | Hewlett-Packard Corporation | CMOS output pad driver with variable drive currents ESD protection and improved leakage current behavior |
JP3489184B2 (ja) * | 1994-04-22 | 2004-01-19 | セイコーエプソン株式会社 | 薄膜トランジスタ回路およびそれを用いた液晶表示装置 |
JP3220037B2 (ja) * | 1996-03-07 | 2001-10-22 | 松下電器産業株式会社 | トランジスタ配置方法 |
TW306054B (en) * | 1996-07-16 | 1997-05-21 | Winbond Electronics Corp | Bit line pull up circuit of static random access memory |
JP2697728B2 (ja) | 1996-08-12 | 1998-01-14 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法 |
JPH10133232A (ja) | 1996-10-30 | 1998-05-22 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
US6177691B1 (en) * | 1997-06-30 | 2001-01-23 | Synopsys, Inc. | Cell based array having compute drive ratios of N:1 |
KR100292048B1 (ko) * | 1998-06-09 | 2001-07-12 | 구본준, 론 위라하디락사 | 박막트랜지스터액정표시장치의제조방법 |
JP2000077609A (ja) * | 1998-08-28 | 2000-03-14 | Hitachi Ltd | 半導体集積回路装置 |
JP2000243841A (ja) * | 1999-02-19 | 2000-09-08 | Toshiba Corp | Cmos回路のパターンレイアウト |
JP3372918B2 (ja) * | 1999-12-21 | 2003-02-04 | 日本電気株式会社 | 設計支援システム及びセル配置方法 |
AU2001241897A1 (en) * | 2000-02-29 | 2001-09-12 | Cadence Design Systems, Inc. | Device level layout optimization in electronic design automation |
US6567968B1 (en) * | 2000-03-06 | 2003-05-20 | Actel Corporation | Block level routing architecture in a field programmable gate array |
JP4690554B2 (ja) * | 2001-01-11 | 2011-06-01 | 東芝モバイルディスプレイ株式会社 | 平面表示装置 |
TWI238375B (en) * | 2000-05-31 | 2005-08-21 | Toshiba Corp | Pumping circuit and flat panel display device |
JP3998169B2 (ja) * | 2000-09-14 | 2007-10-24 | 株式会社ルネサステクノロジ | 回路の設計方法および回路の設計支援プログラム並びに回路設計装置 |
JP2002329783A (ja) * | 2001-04-27 | 2002-11-15 | Toshiba Corp | 配線パターンの自動レイアウト方法、レイアウトパターンの光学補正方法、自動レイアウト方法と光学補正方法に基づいて製造される半導体集積回路、および自動レイアウト光学補正プログラムを記録した記録媒体 |
JP3681121B2 (ja) * | 2001-06-15 | 2005-08-10 | キヤノン株式会社 | 駆動回路及び表示装置 |
JP4798881B2 (ja) * | 2001-06-18 | 2011-10-19 | 富士通セミコンダクター株式会社 | 半導体集積回路装置 |
DE10151379C1 (de) * | 2001-10-18 | 2003-04-24 | Infineon Technologies Ag | Verfahren zur Herstellung einer integrierten Halbleiterschaltung |
JP4320413B2 (ja) * | 2002-09-11 | 2009-08-26 | 日本電気株式会社 | 半導体集積回路およびレイアウト設計装置 |
US6883149B2 (en) * | 2002-09-30 | 2005-04-19 | Sun Microsystems, Inc. | Via enclosure rule check in a multi-wide object class design layout |
-
2002
- 2002-09-11 JP JP2002265067A patent/JP4320413B2/ja not_active Expired - Lifetime
-
2003
- 2003-08-27 US US10/648,256 patent/US7294891B2/en not_active Expired - Lifetime
- 2003-09-04 EP EP10015891A patent/EP2320338A3/en not_active Withdrawn
- 2003-09-04 EP EP10015890A patent/EP2302539A1/en not_active Withdrawn
- 2003-09-04 EP EP03020097A patent/EP1406188A3/en not_active Withdrawn
- 2003-09-11 CN CNB031581277A patent/CN100417022C/zh not_active Expired - Lifetime
- 2003-09-11 CN CNB200710181211XA patent/CN100568504C/zh not_active Expired - Lifetime
- 2003-09-11 CN CN2007101812143A patent/CN101158992B/zh not_active Expired - Lifetime
- 2003-09-11 CN CN2007101812124A patent/CN101162481B/zh not_active Expired - Lifetime
-
2006
- 2006-09-08 US US11/517,258 patent/US7376923B2/en not_active Expired - Lifetime
-
2008
- 2008-04-21 US US12/081,730 patent/US7719063B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5346487A (en) * | 1993-05-26 | 1994-09-13 | Paragon Trade Brands, Inc. | Disposable absorbent garment |
JP3125081B2 (ja) * | 1994-01-19 | 2001-01-15 | 日本電信電話株式会社 | 論理回路 |
CN1139811A (zh) * | 1994-09-09 | 1997-01-08 | 三菱电机株式会社 | 具有改进的分级电源线结构的半导体存储装置 |
CN1166725A (zh) * | 1996-05-24 | 1997-12-03 | 三菱电机株式会社 | 半导体存储装置的输入电路 |
CN1239355A (zh) * | 1998-06-12 | 1999-12-22 | 日本电气株式会社 | 半导体集成电路装置 |
Also Published As
Publication number | Publication date |
---|---|
CN100568504C (zh) | 2009-12-09 |
US20070001196A1 (en) | 2007-01-04 |
EP1406188A3 (en) | 2010-06-02 |
CN1501242A (zh) | 2004-06-02 |
US20040049755A1 (en) | 2004-03-11 |
US7376923B2 (en) | 2008-05-20 |
JP2004103890A (ja) | 2004-04-02 |
CN101158992B (zh) | 2012-02-22 |
CN101162481B (zh) | 2010-06-23 |
EP1406188A9 (en) | 2004-06-23 |
CN101162481A (zh) | 2008-04-16 |
EP1406188A2 (en) | 2004-04-07 |
EP2320338A3 (en) | 2012-03-28 |
JP4320413B2 (ja) | 2009-08-26 |
US20080203439A1 (en) | 2008-08-28 |
EP2302539A1 (en) | 2011-03-30 |
US7719063B2 (en) | 2010-05-18 |
CN101159265A (zh) | 2008-04-09 |
CN101158992A (zh) | 2008-04-09 |
US7294891B2 (en) | 2007-11-13 |
EP2320338A2 (en) | 2011-05-11 |
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