CN100397569C - Substrate processing apparatus, control method adopted in substrate processing apparatus and program - Google Patents

Abstract

A substrate processing apparatus according to the present invention comprises a plurality of processing chambers, discharge systems each provided in conjunction with one of the processing chambers and a common discharge system connected with the discharge systems of at least two processing chambers among the discharge systems provided in conjunction with the individual processing chambers. The common discharge allows a switch-over between a scrubbing common discharge system that discharges discharge gas from each processing chamber after scrubbing the discharge gas at a scrubbing means and a non-scrubbing common discharge system that directly discharges the discharge gas from the discharge system of the processing chamber without scrubbing at the scrubbing means. In this substrate processing apparatus, switch-over control is executed to select either the scrubbing common discharge system of the non-scrubbing common discharge system in correspondence to the type of processing executed in the processing chamber.

Description

The control method of substrate board treatment, substrate board treatment

Technical field

The present invention relates to a kind of substrate board treatment, the control method of substrate board treatment, program that possesses the device of removing the evil that the exhaust that is discharged from is removed the evil in the processing substrate of semiconductor wafer or crystal liquid substrate etc.

Background technology

As substrate board treatment, plasma processing apparatus is arranged, processed substrate in the process chamber, for example semiconductor wafer (following also abbreviate as " wafer ") are used the gas of stipulating, carry out film forming processing or etch processes or use the gas of regulation to carry out the interior cleaning of process chamber etc.

Owing to from the exhaust that the process chamber of this substrate board treatment is discharged, comprise pernicious gas sometimes or environment caused the gas of burden, so from the viewpoint of protection environment, it is unsuitable being discharged in the atmosphere with keeping intact.Therefore, through remove (innoxious) device exhaust of removing the evil by heat treatment etc. from the exhaust of process chamber.

As the substrate board treatment that possesses the above-mentioned device of removing the evil, for example shown in Figure 24, remove the evil device 20A, 20B are set in each process chamber 10A, 10B of substrate board treatment, the gas extraction system 12A, the 12B that connect chambers 10A, 10B on these remove the evil device 20A, 20B respectively make the discharge gas harmlessization from chambers 10A, 10B.But, wherein need the device of removing the evil of process chamber number, so also much more so area, the problem that exists manufacturing cost also to increase must be set.

For addressing these problems, for example also has following technology: as shown in figure 25, gas extraction system 12A, the 12B of chambers 10A, 10B are connected in common venting system 31, by in this common venting system 31, managing the common device 30 of removing the evil of connection on chamber 10A, the 10B throughout, thereby remove processing from the discharge gas of chambers 10A, 10B by the device 30 of removing the evil.(for example with reference to patent documentation 1,2).

[patent documentation 1]: Japanese patent laid-open 11-8200 communique

[patent documentation 2]: Japanese patent laid-open 2004-95643 communique

But, in the processing that carry out the chamber of managing, for example in process chamber, handle before the wafer throughout, as the thick extraction pump-down process that slightly is drawn to authorized pressure from atmospheric pressure state, under high pressure state, carry out pump-down process.And, with regard to this thick extraction pump-down process, do not import in the process chamber, so needn't carry out removing the evil of exhaust owing to also will handle gas.

But, in Figure 24, scheme shown in Figure 25, regardless of the treatment types of carrying out in the chambers, exhaust is all carried out in exhaust from chambers after the device of removing the evil is removed the evil, so as mentioned above, exhaust under high pressure state, the necessary thick extraction pump-down process of removing the evil of this exhaust etc. are also through the device final vacuum of removing the evil of removing the evil.Therefore, exist the burden of the device of removing the evil to become problem big, that the life-span also descends.

In addition, in recent years, the maximization of the processed substrate self of wafer or liquid crystal panel etc. is remarkable, meanwhile, process chamber also maximizes, from the also increase significantly of air displacement of process chamber, so from the viewpoint of such air displacement, the burden of the device of removing the evil also increases.

And because the device of removing the evil for example waits the disinfection exhaust by heat treatment, so the quantity of the device of removing the evil is many more, then the required energy of pump-down process is also big more.Therefore, the energy efficiency that the factory of substrate board treatment is set also descends, and the energy consumption of factory's integral body also increases.No matter the viewpoint from the energy efficiencyization of factory's integral body still is the viewpoint of cost, all expects to remove the evil to discharging gas with alap energy.

From such viewpoint, the quantity of the device of preferably removing the evil is few, so as shown in figure 25, manages being provided with in the chamber that common to remove the evil device better than the device of removing the evil is set respectively in the chamber of reason throughout shown in Figure 24 throughout.But as shown in figure 25, owing to focused on the common device of removing the evil from the exhaust of chambers, if for example handle by chambers is parallel, the burden of the device of then removing the evil increases because of the difference of the kind of this processing.

Summary of the invention

Therefore, the present invention makes in view of the above problems, its purpose is to provide control method, the program of a kind of substrate board treatment, substrate board treatment, can alleviate the burden of carrying out the parts of removing the evil that exhaust removes the evil, and realizes the remove the evil reduction of required energy or cost of exhaust.

In order to solve above-mentioned problem, according to viewpoint of the present invention, provide a kind of substrate board treatment, it is characterized in that possessing: import gas and carry out a plurality of process chambers of predetermined process; Be separately positioned on the gas extraction system in the above-mentioned chambers; The common venting system that connects the gas extraction system of plural at least process chamber in the gas extraction system of above-mentioned chambers, wherein, above-mentioned common venting system constitutes changeable common venting system and the non-common venting system of removing the evil of removing the evil, remove the evil common venting system by the parts of removing the evil to removing the evil from the exhaust of the gas extraction system of above-mentioned chambers and discharging, the non-common venting system of removing the evil ejects exhaust from the gas extraction system of above-mentioned chambers without the parts of removing the evil, the kind that also has the processing of carrying out according to above-mentioned chambers is carried out the control assembly of the switching controls of above-mentioned remove the evil common venting system and the above-mentioned non-common venting system of removing the evil.

In order to solve above-mentioned problem, according to another viewpoint of the present invention, provide a kind of control method of substrate board treatment, possess: import gas and carry out a plurality of process chambers of predetermined process; Be separately positioned on the gas extraction system in the above-mentioned chambers; Common venting system with the gas extraction system of plural at least process chamber in the gas extraction system that is connected above-mentioned chambers, above-mentioned common venting system constitutes changeable common venting system and the non-common venting system of removing the evil of removing the evil, remove the evil common venting system by the parts of removing the evil to removing the evil from the exhaust of the gas extraction system of above-mentioned chambers and discharging, the non-common venting system of removing the evil ejects exhaust from the gas extraction system of above-mentioned chambers without the parts of removing the evil, the kind of the processing of carrying out according to above-mentioned chambers is carried out the switching controls of above-mentioned remove the evil common venting system and the above-mentioned non-common venting system of removing the evil.

According to device of the present invention or control method, because the kind of the processing that can carry out according to above-mentioned chambers, the remove the evil switching controls of common venting system and the non-common venting system of removing the evil is so for example exhaust under high pressure state, the thick extraction pump-down process of removing the evil etc. that needn't carry out this exhaust can be removed the evil by the non-common venting system of removing the evil without removing the evil parts.Thus, because can alleviate the burden of carrying out the parts of removing the evil that exhaust removes the evil, so realize the remove the evil reduction of required energy or cost of exhaust.

In addition, in said apparatus or control method, under the parallel situation about handling of the above-mentioned a plurality of process chambers that are connected in above-mentioned common venting system, when the above-mentioned a plurality of process chambers that are connected in above-mentioned common venting system are parallel when handling, the exclusive control that above-mentioned control assembly is stipulated, make with above-mentioned common venting system switch to handle behind the above-mentioned non-common venting system of removing the evil first handling of being constituted (for example the atmospheric pressure state that from exhaust, needn't remove the evil begin thick extraction pump-down process) and with above-mentioned common venting system switch to that the process chamber of a processing in above-mentioned a plurality of process chambers handled behind the above-mentioned common venting system of removing the evil among second the handling of being constituted (processed that for example needs the processed substrate of removing the evil in the exhaust) handle during, other process chamber in above-mentioned a plurality of process chambers does not carry out another processing.Thus, can prevent to carry out simultaneously first in different process chambers handles and second processing.Therefore, can in the burden that alleviates the parts of removing the evil, prevent the exhaust that discharging must be removed the evil with not removing the evil really.

In addition, in said apparatus or control method, possesses right to use subscription information memory unit, store the usufructuary subscription information of the common venting system in the above-mentioned chambers, exclusive process chamber that is controlled in the above-mentioned a plurality of process chambers that are connected on the above-mentioned common venting system in the above-mentioned chambers carries out under above-mentioned first one the situation of handling in handling with above-mentioned second, judge that whether a processing carry out in other process chamber in the above-mentioned a plurality of process chambers on being connected in above-mentioned common venting system, can not carry out carrying out another processing under the situation of an above-mentioned processing being judged as other process chamber, carry out under the situation of an above-mentioned processing being judged as other process chamber, with another handle as etc. armed state, and the right to use subscription information of above-mentioned common venting system is stored in the above-mentioned right to use subscription information memory unit, afterwards, carry out the reservation processing that the subscription information according to right to use subscription information memory unit carries out another processing.At this moment, above-mentioned reservation processing for example is after processing of other process chamber finishes, and carries out the processing of above-mentioned another processing of the process chamber of armed state such as above-mentioned.By carrying out such reservation processing, the processing in the process chamber of armed state such as can be in automatically.

In addition, can in above-mentioned reservation processing under situation about a plurality of process chambers being stored in the right to use subscription information of above-mentioned common venting system in the above-mentioned right to use subscription information memory unit,, carry out above-mentioned another processing according to the storage order of this subscription information.Therefore, even a plurality of process chamber produces reservation, also can handle in order.

In addition, in said apparatus or control method, above-mentioned first to handle for example be to comprise at least to follow the processing that does not need to carry out the pump-down process of process chamber that exhaust is removed the evil and above-mentioned more than authorized pressure, and above-mentioned second to handle for example be to comprise at least that follow need be to the remove the evil processing of pump-down process of exhaust.Thus, can prevent from simultaneously, can prevent the exhaust that to remove the evil without the parts discharging of removing the evil through the exhaust under the high pressure of the parts discharging of removing the evil.Therefore, can alleviate the burden of the parts of removing the evil.

In addition, in said apparatus or control method, above-mentioned first processing can for example be the thick extraction pump-down process of above-mentioned process chamber or the processing that comprises above-mentioned thick extraction pump-down process (automatic inspection that for example comprises the process chamber of thick extraction pump-down process is handled or the maintenance processing).In addition, above-mentioned second processing for example is to follow the processing gas of the exhaust of above-mentioned process chamber to import to handle or comprise the processing (for example comprising processing gas imports the automatic inspection processing of handling or keep processing) that above-mentioned processing gas importing is handled.Because handling or keep also to comprise thick extraction pump-down process in the processing sometimes or handle gas, such automatic inspection imports processing, so handle and the second exclusive control of handling by carrying out first in this case, can in the burden that alleviates the parts of removing the evil, prevent the exhaust that discharging must be removed the evil with not removing the evil really.

In said apparatus or control method, it can all be the thick extraction pump-down process of above-mentioned process chamber or the processing that comprises above-mentioned thick extraction pump-down process that above-mentioned first processing and above-mentioned second is handled.For example slightly extract pump-down process etc. simultaneously out because can prevent the different disposal chamber, so can prevent from not discharge the exhaust in the thick extraction pump-down process that to remove the evil with removing the evil, in addition, can prevent the adverse current of the exhaust that causes based on the pressure differential in the regularly different chambers of the beginning of thick extraction pump-down process really.

In said apparatus or control method, can possess by processing gas delivery system that import to handle gas and the inert gas import system that imports inert gas and constitute the gas delivery system that imports gas in above-mentioned process chamber, above-mentioned inert gas import system possesses first import system that can the regulation flow imports above-mentioned inert gas; With second import system that can import above-mentioned inert gas than the big flow of above-mentioned first import system.Thus, owing to be low discharge for example using first import system to import in the processing of inert gas, so common venting system through the parts exhaust of removing the evil by removing the evil, be big flow using second import system to import in the processing of inert gas, so can be without removing the evil parts and by the non-common venting system exhaust of removing the evil.Thus, can alleviate the burden of the parts of removing the evil.

In said apparatus or control method, when the particle that carries out above-mentioned process chamber reduces processing, can import above-mentioned inert gas by above-mentioned second import system at least.In particle reduce to be handled, owing to comprise for example exhaust under high pressure state sometimes, needn't carry out the thick extraction pump-down process of removing the evil of this exhaust etc., so can be in such processing without removing the evil parts and by the non-common venting system exhaust of removing the evil.Thus, can alleviate the burden of carrying out the parts of removing the evil that exhaust removes the evil, realize the remove the evil reduction of required energy or cost of exhaust.In addition, no matter be to reduce the situation that imports inert gas in the processing continuously at particle, still temporary transient situation about importing all can import the inert gas of big flow by second import system, carries out cleaning in the process chamber by the gas percussion ripple that produces under rated condition.

At this moment, can only import above-mentioned inert gas by above-mentioned second import system at first at least, afterwards, only provide above-mentioned inert gas by above-mentioned first import system with the stipulated time.Even temporarily the inert gas of big flow is imported process chamber at the appointed time, also owing under rated condition, produce the gas percussion ripple, so can carry out cleaning in the process chamber by the gas percussion ripple.In addition, even through the parts exhaust of removing the evil, also owing to the time with big volume exhaust inert gas is short, so can alleviate the burden of the device of removing the evil by the common venting system of removing the evil.

For addressing the above problem, according to another viewpoint of the present invention, a kind of program of carrying out the control of substrate board treatment, this substrate board treatment possesses: import gas and carry out a plurality of process chambers of predetermined process; Be separately positioned on the gas extraction system in the above-mentioned chambers; Common venting system with the gas extraction system of plural at least process chamber in the gas extraction system that is connected above-mentioned chambers, wherein, above-mentioned common venting system constitutes changeable common venting system and the non-common venting system of removing the evil of removing the evil, remove the evil common venting system by the parts of removing the evil to removing the evil from the exhaust of the gas extraction system of above-mentioned chambers and discharging, the non-common venting system of removing the evil ejects exhaust from the gas extraction system of above-mentioned chambers without the parts of removing the evil, this program can be in computer, the kind of the processing of carrying out according to above-mentioned chambers is used to carry out the switching controls of above-mentioned remove the evil common venting system and the above-mentioned non-common venting system of removing the evil.By moving this program, can alleviate the burden of the device of removing the evil.

In addition, in said procedure, the exclusive control that it is used to stipulate, when the described a plurality of process chambers that are connected in described common venting system are parallel when handling, make with described common venting system switch to handle behind the described non-common venting system of removing the evil constituted first handle and with described common venting system switch to handle that second the process chamber of a processing in described a plurality of process chambers among handling that constituted handle behind the described common venting system of removing the evil during, other process chamber in described a plurality of process chambers does not carry out another processing.By moving this program, can prevent from different process chambers, to carry out simultaneously first and handle and second processing, so, can in the burden that alleviates the parts of removing the evil, prevent the exhaust that discharging must be removed the evil with not removing the evil really.

According to the present invention, can alleviate the burden of carrying out the parts of removing the evil that exhaust removes the evil, realize the remove the evil reduction of required energy or cost of exhaust.In addition, under the situation about handling that in a plurality of process chambers, walks abreast, be switched halfway respectively with the common venting system of removing the evil because can prevent the non-common venting system of removing the evil, so can in the burden that alleviates the parts of removing the evil, prevent the exhaust that discharging must be removed the evil with not removing the evil really.

Description of drawings

Fig. 1 is the sectional view of formation of the substrate board treatment of expression embodiments of the present invention.

Fig. 2 is the block diagram of pipe arrangement configuration example and the configuration example of the device of removing the evil of the chambers of expression substrate board treatment shown in Figure 1.

Fig. 3 only illustrates that a process chamber uses the device of removing the evil, by the schematic diagram that flows of the non-exhaust during common venting system exhaust of removing the evil.

Fig. 4 only illustrates that a process chamber uses the device of removing the evil, the schematic diagram that flows of exhaust when removing the evil the common venting system exhaust.

The schematic diagram that flows of Fig. 5 exhaust when to be that two process chambers of explanation are parallel handle.

The schematic diagram that flows of Fig. 6 exhaust when to be that two process chambers of explanation are parallel handle.

The schematic diagram that flows of Fig. 7 exhaust when to be that two process chambers of explanation are parallel handle.

The schematic diagram that flows of Fig. 8 exhaust when to be that two process chambers of explanation are parallel handle.

Fig. 9 is the block diagram of the control part configuration example in the identical execution mode of expression.

Figure 10 is the schematic diagram of concrete example of the data form of the treatment situation management information of expression in the identical execution mode.

Figure 11 is the schematic diagram of concrete example of the data form of the remove the evil device right to use subscription information of expression in the identical execution mode.

Figure 12 is the flow chart of the control concrete example when carrying out first processing in the identical execution mode of expression.

Figure 13 is the flow chart of the control concrete example when carrying out second processing in the identical execution mode of expression.

Figure 14 is the block diagram of the concrete configuration example of expression gas delivery system shown in Figure 2.

Figure 15 is the schematic diagram that flows that exhaust when carrying out processing of wafers in the process chamber that pipe arrangement shown in Figure 14 constitutes is described.

Figure 16 is that the schematic diagram that flows that particle reduces exhaust when handling is carried out in explanation in the process chamber that pipe arrangement shown in Figure 14 constitutes.

Figure 17 is the block diagram of other concrete configuration example of expression gas delivery system shown in Figure 2.

Figure 18 is that the flow chart that particle reduces the concrete example of control when handling is carried out in explanation in the process chamber that pipe arrangement shown in Figure 17 constitutes.

Figure 19 is the flow chart of an expression NPPC concrete example shown in Figure 17.

Figure 20 is the flow chart of expression the 2nd NPPC concrete example shown in Figure 17.

Figure 21 is the schematic diagram that flows that exhaust when carrying out a NPPC in the process chamber that pipe arrangement shown in Figure 17 constitutes is described.

Figure 22 is the schematic diagram that flows that exhaust when carrying out the 2nd NPPC in the process chamber that pipe arrangement shown in Figure 17 constitutes is described.

Figure 23 is the schematic diagram that flows that exhaust when carrying out the 2nd NPPC in the process chamber that pipe arrangement shown in Figure 17 constitutes is described.

Figure 24 is the block diagram of conventional example that expression possesses the substrate board treatment of the device of removing the evil.

Figure 25 is the block diagram of another conventional example that expression possesses the substrate board treatment of the device of removing the evil.

Symbol description

100 substrate board treatments

110 processing units

120 carrying unit

130 carrying rooms

131 (the boxlike platforms of 131A～131C)

132 (the box type containers of 132A～132C)

136 locators (orienter)

150 common carrying rooms

160M, 160N load-lock (load lock) chamber

170 carrying cell side carrying mechanisms

180 processing unit side carrying mechanisms

200 (the process chambers of 200A～200D)

210 (the gas delivery systems of 210A～210D)

212 (the gas supply sources of 212A～212D)

214 (gas of 214A～214D) imports valve

220 (the gas extraction system of 220A～220D)

230 (230A～230D) main exhaust system

240 (the auxiliary exhaust systems of 240A～240D)

250 (the auxiliary pumps of 250A～250D)

260 (the main pumps of 260A～260D)

270 (the transfer valves of 270A～270D)

280 (the pressure sensors of 280A～280D)

300 devices of removing the evil

310 common venting systems

320 common venting systems of removing the evil

The 330 non-common venting systems of removing the evil

340 parts of removing the evil

350 transfer valves

400 control parts

410?CPU

420?ROM

430?RAM

440 timing pieces

450 display units

460 inputoutput units

470 reporting units

480 various controllers

490 memory units

492 treatment situation management information

The 494 device right to use subscription informations of removing the evil

510 handle gas delivery system

512 handle the gas supply source

514 gases import valve

520 inert gas import systems

522 inert gas supply sources

530 low discharge import systems

532 choke valves

534 gases import valve

540 big flow import systems

542 gases import valve

602 main valves

604 communicating pipes

606 communicating valves

610 handle gas delivery system

612 handle the gas supply source

614 upstream side gases import valve

615 flow regulator

616 downstream gases import valve

620 inert gas import systems

622 inert gas supply sources

624 upstream side gases import valve

630 low discharge import systems

632 choke valves

636 downstream gases import valve

640 big flow import systems

646 downstream gases import valve

The W wafer

Embodiment

Below, the preferred forms that present invention will be described in detail with reference to the accompanying.Wherein, in this specification and accompanying drawing,, omit repeat specification thus to having the additional same-sign of inscape that identical function constitutes in fact.

(configuration example of substrate board treatment)

At first, with reference to the substrate board treatment of description of drawings embodiments of the present invention.Fig. 1 is the formation schematic diagram of the substrate board treatment of expression embodiments of the present invention.This substrate board treatment 100 possesses processing unit 110, and processed substrate, for example semiconductor wafer (following also abbreviate as " wafer ") W are carried out various processing such as film forming processing, etch processes; With carrying unit 120, this processing unit 110 is moved into and is taken out of wafer W relatively.

The configuration example of carrying unit 120 at first, is described.As shown in Figure 1, carrying unit 120 is at substrate storage container, box type container 132 described later (132A～132C) and have between the processing unit 110 and move into the carrying room 130 of taking out of wafer for example.Carrying room 130 forms the cross section and is roughly polygonal box-shaped body.In carrying room 130, constitute the cross section and be roughly a side on polygonal long limit, and be provided with a plurality of boxlike platforms 131 (131A～131C).These boxlike platforms 131A～131C can load the box type container 132A～132C as substrate storage container one example respectively.

Each box type container 132 (among the 132A～132C), can hold for example maximum 25 wafer W by multistage equally spacedly loading, inner for for example being full of N ₂The airtight construction of gas atmosphere.In addition, carrying room 130 constitutes to move into to its inside through sluice valve and takes out of wafer W.In addition, boxlike platform 131 is not limited to situation shown in Figure 1 with the quantity of box type container 132.

In the end of carrying room 130, be provided with locator (preset adjustment platform: pre-alignment stage) 136 as positioner.This locator 136 for example detects the plane of orientation of wafer W or recess etc. and aims at.

In carrying room 130, be provided with carrying cell side carrying mechanism (carrying mechanism in the carrying room) 170, for example carry wafer W along length direction (direction of arrow shown in Figure 1) by linear driving mechanism.Carrying cell side carrying mechanism 170 bases drive from the control signal of control part 400.In addition, carrying cell side carrying mechanism 170 can be the both arms mechanism that has two pick-ups (pick) as shown in Figure 1, also can be the single armed mechanism that only has a pick-up.

Below, the configuration example of processing unit 110 is described.For example, under the situation of boundling (clustertool) type substrate board treatment, processing unit 110 as shown in Figure 1, around the common carrying room 150 that forms rectangle (for example hexagon), connect a plurality of process chambers 200 (first～the 4th process chamber 200A～200D) and load locking room 160M, the 160N that wafer W embodiment such as film forming are handled (for example plasma CVD processing) or etch processes predetermined process such as (for example plasma etch process) airtightly.

But chambers 200A～200D connects the gas delivery system 210A～210D (omitting) that can import regulation gases such as handling gas or passivation (purge) gas in chambers 200A～200D respectively gas extraction system 220A～220D in the chambers 200A～200D of exhaust in Fig. 1.In addition, the configuration example of these gas delivery systems and gas extraction system as described later.

In addition, the inside of chambers 200A～200D for example constitutes down.That is, manage throughout and relatively set upper electrode and lower electrode in the 200A～200D of chamber.On upper electrode, be connected with the above-mentioned gas import system.The loading stage of lower electrode double as loaded with wafers W.On these upper electrodes, lower electrode, connect the high frequency electric source that applies the regulation high frequency power respectively.

In such chambers 200A～200D,,, become the specified vacuum pressure state then by the pump-down process of gas extraction system as if for example moving into wafer W and being loaded on the lower electrode.In addition, apply high frequency power, simultaneously, import processing gas equably to wafer W from gas delivery system through upper electrode to upper electrode and lower electrode.Thus, the processing gas that plasmaization imports from upper electrode is to the surperficial embodiment such as the etch processes of wafer W.

The processing of the wafer W among such chambers 200A～200D is for example carried out according to processing of wafers information such as the processing of the expression treatment process in the memory unit that is stored in control part 400 in advance etc. etc., method for makings.Processing of wafers information is because of the treatment types of wafer or the difference difference of condition.In addition, the quantity of process chamber 200 is not limited to situation shown in Figure 1.

Above-mentioned common carrying room 150 has following function: promptly between above-mentioned chambers 200A～200D, or move between chambers 200A～200D and each first, second load locking room 160M, the 160N and take out of wafer W.Common carrying room 150 forms polygon (for example hexagon), connect above-mentioned chambers 200 (200A～200D) across sluice valve respectively around it, simultaneously, the front end that connects first, second load locking room 160M, 160N respectively across sluice valve (inlet side sluice valve).The cardinal extremity of first, second load locking room 160M, 160N is connected on the another side of carrying room 130 across sluice valve (atmospheric side sluice valve) respectively.

First, second load locking room 160M, 160N have after temporary transient maintenance and pressure adjustment wafer W, skip the function of subordinate.But the inside of each first, second load locking room 160M, 160N is respectively arranged with the band to band transfer module of loaded with wafers W.

In such processing unit 110, as mentioned above, between common carrying room 150 and chambers 200A～200D, and constitute respectively and can open and close airtightly between common carrying room 150 and above-mentioned each load locking room 160M, 160N, and by boundlingization, in case of necessity can with common carrying room 150 in are communicated with.In addition, also constitute respectively and can open and close airtightly between above-mentioned first and second each load locking room 160M, 160N and the above-mentioned carrying room 130.

In common carrying room 150, for example be provided with by can bend and stretch, lifting, the processing unit side carrying mechanism that multi-joint arm constituted (carrying mechanism in the common carrying room) 180 that constitutes rotatably.Processing unit side carrying mechanism is carried wafer W between each load locking room 160M, 160N and chambers 200A～200D.Processing unit side carrying mechanism 180 drives according to the control signal from control part 400.In addition, processing unit side carrying mechanism 180 can be the both arms mechanism with two pick-ups as shown in Figure 1, also can be the single armed mechanism that only has a pick-up.

In substrate board treatment 100, be provided with control part 400, comprise the control of above-mentioned carrying cell side carrying mechanism 170, processing unit side 180, each sluice valve, locator 136 etc., the operation of control basal plate processing unit integral body.The configuration example of such control part 400 as described later.

In addition, in substrate board treatment 100, set the device 300 of removing the evil jointly of the discharge gas harmlessization (removing the evil) that makes chambers 200A～200D.The device 300 of removing the evil connects with the common venting system 310 of gas extraction system 200A～200D in being connected chambers 200A～200D.Common venting system 310 is connected on the gas extraction system of the factory that for example is provided with substrate board treatment 100 across the device 300 of removing the evil.

If the substrate board treatment that constitutes like this 100 runnings then begin the processing of wafer W.For example take out of wafer W, be carried to locator 136 by carrying cell side carrying mechanism 170 from box type container 132A～132C.In addition, take out of the wafer W of locating, move in load locking room 160M or the 160N by locator 136 from locator 136.At this moment, be arranged in load locking room 160M or 160N, then after taking out of the wafer W of finishing dealing with, move into untreated wafer W if finish the wafer W of finishing dealing with of all required processing.

Processing unit side carrying mechanism 180 will be moved into the wafer W of load locking room 160M or 160N and take out of from load locking room 160M or 160N, move into the process chamber 200 of handling this wafer W, carry out predetermined process.In addition, by processing unit side carrying mechanism 180 wafer W of handling of finishing processing in the process chamber 200 is taken out of from process chamber 200.At this moment, under the situation of the essential processing through continuous a plurality of process chambers 200 of wafer W, wafer W moved into carry out next other process chamber 200 of handling, carry out the processing in this process chamber 200.

In addition, make the wafer of finishing dealing with of finishing all essential processing turn back to load locking room 160M or 160N.The wafer W of handling that will turn back to load locking room 160M or 160N by carrying cell side carrying mechanism 170 is restored to original box type container 132A～132C.

Like this, between substrate board treatment 100 on-stream periods, be discharged to for example factory's gas extraction system through what the device 300 of removing the evil will be discharged from gas extraction system 220A～200D of chambers 200A～200D from common venting system 310.

Here, with reference to the pipe arrangement configuration example of description of drawings chambers 200A～200D and the configuration example of the device 300 of removing the evil.Fig. 2 is the block diagram of pipe arrangement configuration example with the configuration example of the device 300 of removing the evil of expression chambers 200A～200D.Because the pipe arrangement configuration example of chambers 200A～200D is the same, illustrate typically so omit A～D the symbol of following inscape from expression chambers 200A～200D.Therefore, for example the situation of process chamber 200 is represented chambers 200A～200D.

(the pipe arrangement configuration example of process chamber)

The pipe arrangement formation (gas delivery system and gas extraction system) of process chamber 200 at first, is described.As shown in Figure 2, in process chamber 200, be provided with the pressure sensor 280, the gas delivery system 210 that can to process chamber 200 in, import regulation gases such as processing gas or passivation gas that detect the pressure in the process chamber 200, be used for the gas extraction system 220 in the pump-down process chamber 200.

Gas delivery system 210 for example imports valve (gas importing valve) 214 through gas and gas supply source 212 is connected on the process chamber 200 and constitutes.As the gas that imports to process chamber 200 from gas supply source 212, except that for example conduct promotes the PFC gas (CF of the material of global warming ₄, C ₂F ₆Deng) or comprise the NF of harmful components ₃, SF ₆, NH ₃, NO _x, outside the processing gas of must exhaust removing the evil such as hydrogen halides, heavy metal alkoxide complexes, for example also be useful on the inert gas that passivation gas or pressure are adjusted gas etc.In this manual, so-called inert gas is meant the gas that is difficult to extensively cause chemical change, for example not only comprises rare gas family elements such as Ar gas, He gas, also comprises N ₂Gas etc.In addition, gas delivery system 210 is not limited to formation shown in Figure 2.For example also can for example flow control component, check valve door such as mass flow controller be set in the downstream that gas imports valve.

Gas extraction system 220 for example is connected in main exhaust system 230 and auxiliary exhaust system 240 side by side on the process chamber 200 and constitutes.Main exhaust system 230 is connected on the auxiliary pump 250 behind the exhaust side interflow with auxiliary exhaust system 240.In main exhaust system 230, connect main pump 260, on auxiliary exhaust system 240, connect and switch from the exhaust of main exhaust system 230 and transfer valve (switch valve, auxiliary valve) 270 from the exhaust of auxiliary exhaust system 240.The main pump 260 of main exhaust system in addition, 230 is connected on the process chamber 200 across not shown pressure-regulating valve (APC).

Auxiliary pump 250 for example is made of dried (dry) pump, is undertaken and will be vented to the thick extraction pump-down process of certain vacuum state in the process chamber 200 by this auxiliary pump 250.Main pump 260 for example is made of turbine pump etc., carries out further being vented in the process chamber 200 the main pump-down process of extracting out that the high vacuum of expectation is pressed by this main pump 260.The exhaust side of the auxiliary pump 250 of gas extraction system 220 is connected on the device 300 of removing the evil across common venting system 310.In addition, if gas extraction system 200 can slightly be extracted the formation of pump-down process at least out, then be not limited to formation shown in Figure 2.

Above-mentioned pressure sensor 280 for example is made of diaphragm gauge (capacitance manometer).To supply to the control part 400 of substrate board treatment 100 from the output of this pressure sensor 280.In addition, control the gas importing valve 214 of above-mentioned gas import system 210, the transfer valve 270 of gas extraction system 220 respectively by the control signal of control part 400.

(the work example of gas delivery system and gas extraction system)

When the process chamber 200 that constitutes like this carries out the processing of wafer W, at first under the state of the sluice valve of closing this process chamber 200, vacuumize processing, with the authorized pressure that reduces pressure in the process chamber 200.Vacuumize for example thick extraction pump-down process by the authorized pressure that reduces pressure of processing, carry out with the main pump-down process of extracting out of the setting pressure of the high vacuum that further reduces pressure from authorized pressure.

Particularly, at first, gas extraction system 220 is become auxiliary exhaust system 240, drive auxiliary pump 250, slightly extract pump-down process out by open switch valve 270.In addition,, then, gas extraction system 220 is become main exhaust system 230, drive main pump 260, lead the extraction pump-down process, up to detecting setting pressure by pressure sensor 280 by closing switch valve 270 if detect authorized pressure by pressure sensor 280.

In addition,, then open sluice valve, wafer W is moved into process chamber 200 if the main pump-down process of extracting out finishes.If wafer W is loaded on the loading stage, then close sluice valve, move to the treatment process of wafer W.At this moment, closing switch valve 270, gas extraction system 220 become under the state of main exhaust system 230, importing valve 214, will import in the process chamber 200, beginning the processing of wafer W thus from the processing gas of gas supply source 212 by open gas.That is, for example from the pressure of pressure sensor 280, the pressure in the process chamber 200 are maintained under the state of authorized pressure, carry out the processing of above-mentioned wafer W at the appointed time in basis.

If the finishing dealing with of wafer W then closed gas and imported valve 214, carry out arrival exhaust in the process chamber 200 from main exhaust system 230, will handle wafer W and from process chamber 200, take out of.Like this, the processing of one piece of wafer W finishes.Afterwards, next wafer W is moved into process chamber 200, to handle wafer W in turn with above-mentioned same step.When carrying out the processing of such wafer W, will be discharged to for example gas extraction system of factory from what the gas extraction system 220 of process chamber 200 was discharged through the device 300 of removing the evil from common venting system 310.

(configuration example of the device of removing the evil)

Below, the configuration example of the device of removing the evil is described.The device 300 of removing the evil is connected on the common venting system 310.Particularly, common venting system 310 for example is branched off into the common venting system 320 and not making from the exhaust of process chamber 200 innoxious (removing the evil) and the non-common venting system 330 of removing the evil of exhaust of removing the evil that makes from the exhaust of process chamber 200 innoxious (removing the evil) final vacuum in the device 300 of removing the evil.

On the common venting system 320 of removing the evil, connect the parts 340 of removing the evil make from the exhaust of common venting system 310 innoxious (removing the evil), on the non-common venting system 330 of removing the evil, connect and switch from the exhaust of the common venting system 320 of removing the evil and transfer valve (switch valve) 350 from the exhaust of the non-common venting system 330 of removing the evil.Remove the evil and for example be connected on the gas extraction system of factory behind the exhaust side interflow of common venting system 320 and the non-common venting system 330 of removing the evil.

In addition, the above-mentioned parts 340 of removing the evil are for example by by heat treatment the reactive tank of removing the evil of removing the evil through the exhaust of common venting system 320 of removing the evil etc. being constituted.In addition,, be not limited to heat treatment, applicable various formations as the parts of removing the evil.The transfer valve 350 of the above-mentioned device of removing the evil is by the control signal control of control part 400.Control part 400 is according to the treatment types that process chamber 200 carries out, the switching controls of the transfer valve 350 of the device 300 of removing the evil.

(the work example of the device of removing the evil)

Below, with reference to the work example of the device of removing the evil of the above-mentioned formation of description of drawings.At first, only situation that process chamber uses the device 300 of removing the evil to carry out exhaust is described.Here, illustrate with process chamber 200A and represent chambers 200A～200D to use the situation of the device 300 of removing the evil.Fig. 3, Fig. 4 are the schematic diagrames that flow (thick-line arrow) of the exhaust when only process chamber 200A uses the device 300 of removing the evil to carry out exhaust is described.

As mentioned above, the transfer valve 350 of the device 300 of removing the evil is switched to the exhaust of the common venting system 320 of removing the evil and the exhaust of the non-common venting system 330 of removing the evil according to the treatment types that process chamber 200A carries out.Therefore, for example during the thick extraction pump-down process in carrying out above-mentioned process chamber 200A, as shown in Figure 3, the transfer valve 350 of the open device 300 of removing the evil, by switching to the exhaust of the non-common venting system 330 of removing the evil, the ground exhaust in statu quo of not removing the evil thus in the processing of carrying out in addition, for example import to be handled when carrying out the processing of wafer W behind the gas, as shown in Figure 4, close the transfer valve 350 of the device 300 of removing the evil, switch to the exhaust of the common venting system 320 of removing the evil, after removing the evil, carry out exhaust thus.

Owing to when carrying out the processing of wafer W like this, also import in the thick usually extraction pump-down process and handle gas, also from process chamber 200A, do not discharge so comprise the discharge gas of harmful components, so even also do not have problems without the parts 340 of removing the evil.But, if the thick extraction pump-down process that begins from atmospheric pressure to the exhaust of the processing under high pressure state all through parts 340 exhausts of removing the evil of the device 300 of removing the evil, the burden of device 300 of then removing the evil increases, so such processing also can be without parts 340 exhausts of removing the evil, therefore also can alleviate the burden of the device 300 of removing the evil, can prolong the life-span of the device 300 of removing the evil.In addition, can realize the efficient activity of disinfection, carry out the required energy of disinfection so also can reduce, even the device of removing the evil of low capacity, also can fully be suitable for is the common device 300 of removing the evil of chambers.

Therefore, processing as process chamber 200A, except that the processing of above-mentioned common wafer W, the maintenance that also has operator for example to carry out is handled, or with the operating efficiency that improves periodic maintenance, to shorten activity duration etc. be purpose, (autocheck processing) handled in the automatic inspection of carrying out the inspection of substrate board treatment 100 each several parts automatically.Here so-called automatic inspection is handled and is comprised automatic set handling and self-examination processing, also comprises the inspection of gas delivery system 210A and the gas extraction system 220A of process chamber 200A in each inspection item.Therefore, also carry out the thick extraction pump-down process of above-mentioned process chamber 200 during this maintenance processing or automatic inspection are handled sometimes.

Especially under the situation that the automatic inspection of process chamber 200A is handled, for example importing processing gas from gas delivery system 210A, on one side by pressure sensor 280A monitor pressures, make pressure rise to authorized pressure on one side, after importing processing gas, slightly extract pump-down process out by this combined treatment.In this case, although be slightly to extract pump-down process out, be discharged owing to handle gas, so comprise under the situation of harmful components the final vacuum of must removing the evil at this processing gas.Like this, in the thick extraction pump-down process of process chamber 200A, also discharging comprises the exhaust of harmful components.

At this moment, if with for when slightly extracting pump-down process out, switching to the transfer valve 270A interlock that auxiliary exhaust system 240A opens, the transfer valve 350 of the device 300 of removing the evil is automatically switched to the exhaust of the non-common venting system 330 of removing the evil, the exhaust of then worrying to comprise harmful components do not removed the evil and former state be discharged into the gas extraction system of factory.

Therefore, in the present invention, or not do not control transfer valve 350 as follows by the control part 400 of substrate board treatment 100 with transfer valve 270A interlock.Promptly, whether the processing that control part 400 judgment processing chamber 200A carry out is not need removing the evil of exhaust at least, the processing of carrying out from high pressure state (for example more than the authorized pressure), being judged as is under the situation of this processing, as shown in Figure 3, transfer valve 350 by the open device 300 of removing the evil, common venting system 310 is become the non-common venting system 330 of removing the evil, do not remove the evil ground exhaust, be judged as under the situation that is not the processing carried out from high pressure state (for example more than the authorized pressure), as shown in Figure 4, by closing the transfer valve 350 of the device 300 of removing the evil, common venting system 310 is become the common venting system 320 of removing the evil, in the final vacuum of removing the evil.

At this moment, for whether being processing from high pressure state (for example more than the authorized pressure), for example when carrying out the processing of process chamber 200A, by the pressure in the pressure sensor 280A detection process chamber 200A, under detected pressure is situation more than the authorized pressure (for example 50Torr[66.6hPa]), be judged as the processing that begins from high pressure state, under than the little situation of authorized pressure (for example 50Torr), be judged as the processing that begins from low pressure state.

According to such control, for example the thick extraction pump-down process that begins from atmospheric pressure state in the process chamber 200 is the processing that needn't remove the evil, begin from high pressure state, thus for such processing do not remove the evil by non-common venting system 330 exhausts of removing the evil.

Relative therewith, safeguard that the pump-down process in processing or the automatic inspection processing is the processing of carrying out under low pressure state, so even identical thick extraction pump-down process, such pump-down process is also in the final vacuum of removing the evil by the common venting system 320 of removing the evil.In addition, following the processing of handling the wafer W that gas imports is the processing of removing the evil, carrying out under low pressure state that must carry out exhaust, thus for such processing also in the final vacuum of removing the evil by the common venting system 320 of removing the evil.

Thus, the exhaust that can prevent to comprise harmful components really is discharged into the gas extraction system of factory from the device 300 of removing the evil.And, begin the processing of the thick extraction pump-down process of carrying out or wafer W from low pressure state like this, even through removing the evil parts 340 exhausts, compare, also can reduce the burden that puts on the device 300 of removing the evil with the thick extraction pump-down process that begins from high pressure state.

Below, the work example of the device of removing the evil when handling with reference to a plurality of process chambers of description of drawings are parallel.Here, illustrate represent process chamber 200A～200D, by the parallel situation about handling of process chamber 200A and 200B.Fig. 5～Fig. 8 is the schematic diagram of flow (thick-line arrow) of the exhaust of explanation when handling by process chamber 200A, 200B are parallel.

As mentioned above, in the present invention, in the processing that process chamber 200A, 200B carry out is not need to carry out the removing the evil of exhaust at least, begin from high pressure state (for example more than the authorized pressure) under the situation of the processing carried out, common venting system 310 is switched to the non-common venting system 330 of removing the evil, under the situation of in addition processing, common venting system 310 is switched to the common venting system 320 of removing the evil.

Therefore, under the parallel situation about handling of a plurality of process chambers, utilize the processing timing of chambers sometimes, carry out respectively common venting system 310 being switched to first of the non-common venting system 330 of removing the evil by the different disposal chamber simultaneously and handle; With common venting system 310 is switched to second handling of carrying out behind the common venting system 320 of removing the evil.At this moment, during certain process chamber carries out second processing, promptly, handle, then can switch to the exhaust of the non-common venting system 330 of removing the evil if other process chamber begins first by removing the evil between common venting system 320 exhaust cycles.Wherein, because certain process chamber is discharged into the problem of the gas extraction system of factory through the exhaust of non-common venting system 330 dischargings must the carrying out disinfection of removing the evil so exist not remove the evil with regard to former state.

For example shown in Figure 5, handle by second at process chamber 200B, for example on one side import the processing of handling the wafer W that gas carries out on one side by gas delivery system 210B, remove the evil between the exhaust cycle of common venting system 320, as shown in Figure 6, if carrying out first, handles other process chamber 200A, for example the thick pump-down process that begins from atmospheric pressure, then the transfer valve 350 of the open device 300 of removing the evil switches to the exhaust of the non-common venting system 330 of removing the evil.Therefore, as shown in Figure 6, not removed the evil by the non-common venting system 330 of removing the evil from process chamber 200A exhaust that discharge, that must remove the evil just is vented to the gas extraction system of factory.

On the contrary, as shown in Figure 7, handle by first at process chamber 200B, for example the thick pump-down process that begins from atmospheric pressure is carried out between the exhaust cycle of the non-common venting system 330 of removing the evil, as shown in Figure 8, carry out second at other process chamber 200A and handle, on one side for example import under the situation of the processing of handling the wafer W that gas carries out by gas delivery system 210B on one side, close the transfer valve 350 of the device 300 of removing the evil, switch to the exhaust of the common venting system 320 of removing the evil.At this moment, be not vented to the defective of the gas extraction system of factory with regard to former state although not existing is removed the evil by the non-common venting system 330 of removing the evil from the exhaust that must remove the evil of process chamber 200A, but because before the exhaust that process chamber 200B begins from high pressure state, be through removing the evil parts 340 exhausts, so the burden of the device 300 of removing the evil increases by the common venting system 320 of removing the evil.

Therefore, in the present invention, under the parallel situation about handling of a plurality of process chambers, a process chamber carry out above-mentioned first handle in handling with second any and handle during, the exclusive control of stipulating makes all other process chambers not carry out another processing.Thus, even under the parallel situation about handling of a plurality of process chambers, can prevent that also the different disposal chamber from carrying out the processing of needn't exhaust removing the evil and the processing of must exhaust removing the evil respectively simultaneously, so can alleviate the burden of the device 300 of removing the evil, simultaneously, prevent from really the exhaust that must remove the evil not to be removed the evil to be vented to the gas extraction system of factory with regard to former state.

(carrying out the configuration example of the control part of exclusive control)

Below, the control part that carries out above-mentioned exclusive control is described.Exclusive control is like this undertaken by the control part 400 of for example control basal plate processing unit 100, so the concrete configuration example of control part 400 is described below with reference to Fig. 9.

As shown in Figure 9, control part 400 possesses the CPU (central processing unit) 410 that constitutes the control part main body; ROM (read-only memory) 420, storage CPU410 control the routine data that each one uses (for example the various inspections of the processing of wafer W, substrate board treatment described later are handled, the right to use of the device of removing the evil is handled, particle reduce handle the supervisor data) etc.; RAM (random access memory) 430 is provided with memory area that is used for the various data processing that CPU410 carries out etc.; The timing piece 440 that constitutes by the counter of instrumentation time etc., by display-operation picture or the display unit 450 of selecting the LCD etc. of picture etc. to constitute; Can import the inputoutput unit 460 of various data etc. by the operator; The reporting unit 470 that constitutes by siren of for example buzzer etc.; The various controllers 480 that the each several part of control basal plate processing unit 100 is used; The memory unit 490 that constitutes by memory etc. for example.

By buses such as control bus, system bus, data/address buss, above-mentioned CPU410 is electrically connected with ROM420, RAM430, timing piece 440, display unit 450, inputoutput unit 460, reporting unit 470, various controller 480, memory unit 490.

In various controllers 480, except that the controller of each carrying mechanism 170,180, locator 136, also comprise the controller of the control of the each several part that carries out chambers 200A～200D, the gas importing valve 214 of control above-mentioned gas import system 210, the transfer valve 270 of gas extraction system 220, the valve controls such as transfer valve 350 of the device of removing the evil.In addition, the control of chambers 200A～200D each several part also can be provided with control part to each of chambers 200A～200D and controls.At this moment, above-mentioned control part 400 is connected with the control part of chambers 200A～200D, while carry out the exchange control basal plate processing unit 100 of data or signal.

Storage in memory unit 490: treatment situation management information 492, whether this information stores chambers 200A～200D carries out above-mentioned first is handled and second treatment situation of handling; The device right to use of removing the evil subscription information (common venting system right to use subscription information) 494, this information stores are used to carry out above-mentioned first processing and second to be handled and the usufructuary subscription information of the device 300 of guaranteeing to remove the evil, etc.

The concrete example of above-mentioned treatment situation management information 492 is described with reference to Figure 10 here.Treatment situation management information 492 is for example shown in Figure 10, is made of the data form with process chamber, first processing, second project of handling etc.The project of chambers is represented the kind of chambers 200A～200D that substrate board treatment 100 has.First processing and second project of handling represent whether chambers is carried out first and handled and second processing.

In above-mentioned first processing, second project of handling, for example if chambers 200A～200D begins its processing, then set (storage) " 1 ", if (storage) " 0 " is then set in this processing end.Therefore, handling (or second processing) first is under the situation of " 0 ", represent that this process chamber does not carry out first processing (or second processing), handling (or second processing) first is under the situation of " 1 ", represents that this process chamber carries out first and handles (or second processing).

For example, according to example shown in Figure 10, because first processing of process chamber 200A, 200C, 200D and second project of handling are " 0 ", then process chamber 200A, 200C, 200D are in the situation of not carrying out first processing and second processing as can be known.On the contrary, because the first processing project of process chamber 200B be " 1 ", the second processing project be " 0 ", so process chamber 200B is in and does not carry out second processing as can be known, but handles the situation of first processing.

According to such treatment situation management information 492, owing to first of chambers 200A～200D handle and second treatment situation of handling as can be known, so when chambers is carried out first processing and second processing, can judge easily whether other process chamber carries out first and handle and second processing according to this treatment situation management information 492.

In addition, treatment situation management information 492 needn't for example also can be provided with and represent that respectively first of process chamber 200A～200D handles, the sign F of second treatment situation of handling by data form storage shown in Figure 10 _A1～F _D1, the sign F _A2～F _D2, with above-mentioned the same, to these signs F _A1～F _D1, the sign F _A2～F _D2Set " 0 ", " 1 ".

Below, with reference to the remove the evil concrete example of device right to use subscription information 494 of Figure 11 explanation.The device right to use of removing the evil subscription information 494 for example is made of the data form with process chamber, treatment types project etc. shown in Figure 11.The project of process chamber is represented the kind of chambers 200A～200D that substrate board treatment 100 has.The project of treatment types represents to preengage the processing carried out after the right to use of device (first handle or second handle) of removing the evil.

If first of the device right to use subscription information 494 reservation chambers 200A～200D that remove the evil are handled or second processing, then are stored in turn in the data form of the device right to use subscription information 494 of removing the evil.Therefore, the remove the evil processing (task) of each line display reservation of data form of device right to use subscription information 494.

The device right to use of removing the evil subscription information 494 is for handling or the second exclusive control of handling by above-mentioned first, in other process chamber, carry out a processing in first processing and second processing, can not carry out under the situation of another processing, carry out this another when handling in the back, the right to use of device 300 (common venting system 310) usefulness of removing the evil is used in reservation.

Obtain the right to use of this device 300 of removing the evil according to order to device right to use subscription information 494 reservations of removing the evil.Therefore, when another processing of other process chamber finishes,, handle (task) according to the order in the data form that is stored in the device right to use subscription information 494 of removing the evil.Afterwards, according to the order of handling, the order of reservation rises.

For example, according to example shown in Figure 11, because initial reservation has first of process chamber 200A to handle, so at first carry out this processing.Afterwards, if the processing of preengaging at first, then first of the 200C of second reservation order of handling rises, and becomes first.

In addition, for example can operate the inputoutput unit 460 of control part 400, cancel the reservation of the device right to use subscription information 494 of removing the evil by the operator.In addition, under the interrupted situation of processing that pending process chamber such as becomes by reservation, the also cancellation reservation of device right to use subscription information 494 of removing the evil.If cancellation reservation like this, then remaining reservation order rises successively.

Such processing also can become the data form of the device right to use subscription information 494 of removing the evil for example to be carried out first in first out (FIFO:first-in, first-out) data configuration of Kong Zhi formation (queue) form carries out.

(concrete example of first processing and the second exclusive control of handling)

Below, above-mentioned first concrete example of handling with the second exclusive control of handling that is undertaken by the control part 400 that constitutes like this is described.Here, common venting system 310 is switched to the processing of carrying out behind the non-common venting system 330 of removing the evil be called first processing, common venting system 310 is switched to the processing of carrying out behind the common venting system 320 of removing the evil be called second processing.

In above-mentioned first handles, for example except that the thick extraction pump-down process that begins from high pressure state (for example pressure state more than the 50Torr), also comprise the automatic inspection processing that contains this thick extraction pump-down process or safeguard that the clean of handling, following thick extraction pump-down process (for example imports the indoor particle reduction processing of passivation gas (or inert gas) back clean and (is also referred to as NPPC:Non-PlasmaParticle Cleaning.))。Reduce processing as particle, remove on one side by for example in process chamber, importing N ₂Passivation gas such as gas repeat atmosphere opening on one side and vacuumize, and the particle in the process chamber is flown upward outside the particle reduction processing of removal, for example also have following particle to reduce processing etc., promptly by importing N with big flow in process chamber ₂Passivation gas such as gas are utilized the gas percussion ripple (ShockWave: the pressure wave that supersonic speed is propagated), peel off the particle of removing in the process chamber that produces under the rated condition.And, reduce in the processing at the particle that utilizes the particle impacting ripple, as described later, for example there is following situation, promptly constantly in process chamber, import the passivation gas exhaust on one side (for example situation of being undertaken) of big flow on one side by pipe arrangement formation shown in Figure 14; Temporarily import to process chamber with passivation gas, constantly import the passivation gas exhaust on one side (for example constituting the situation of carrying out) of low discharge afterwards on one side by pipe arrangement shown in Figure 17 with big flow.

In above-mentioned second handles, except that the processed of wafer W such as for example etch processes or film forming processing, also comprise following processing, promptly (for example do not have under the state of wafer at process chamber with regard to importing the clean of carrying out behind the processing gas, handle the indoor no chip cleaning processing of gas clean while importing) etc., the gas that importing processing gas is used imports the open treated of valve 214, from the thick extraction pump-down process that the low-pressure state begins, comprise the importing of such processing gas or handle or safeguard and handle from the automatic inspection of the thick extraction pump-down process of low-pressure state (for example low pressure state) beginning than 50Torr.

(concrete example of the control when carrying out first processing)

The concrete example of the control when chambers 200A～200D carries out first processing (for example thick extraction pump-down process that begins from high pressure state) at first, is described.Figure 12 is that first the flow chart of concrete example of control when handling is carried out in expression.As shown in figure 12, the chamber of managing carries out at first carrying out exclusive processing (step S100～step S150) under first situation about handling throughout, afterwards, beginning first processing (step S160～S190).

In this exclusive control, at first in step S100, judge whether the process chamber that stand-by appointment is handled.Particularly, judge in the form of the device right to use subscription information 494 of removing the evil whether the processing (task) of having preengage is arranged.This be because if having in the form of device right to use subscription information 494 of removing the evil preengage etc. the processing of pending other process chamber, then should handle preferential.

In step S100, be judged as the process chamber that stand-by appointment is handled, have in the form of the device right to use of promptly removing the evil subscription information 494 under the situation of processing (task) of reservation, in step S120, show that by display unit 450 can not carry out first handles, and moves to step S130 aftermentioned reservation processing afterwards.This is for preventing that the different disposal chamber from carrying out first simultaneously and handling and second handle.In addition, at this moment, for example also can the operator be known to carry out first processing by reporting unit 470 reports.

In addition, in step S100, be judged as the process chamber that no stand-by appointment is handled, do not have under the situation of the processing (task) of preengaging in the form of the device right to use of promptly removing the evil subscription information 494, judge whether that in step S110 other process chamber is carrying out second processing.This is for preventing that the different disposal chamber from carrying out first simultaneously and handling and second handle.Particularly, judge according to the treatment situation management information 492 of memory unit 490.For example, according to the example of treatment situation management information 492 shown in Figure 10,, all do not carry out second processing so can be judged as chambers 200A～200D because the second processing project of chambers 200A～200D all is " 0 ".

Be judged as other process chamber and do not carry out under the situation of second processing (for example processed of wafer W) in step S110, move to step S160 processing afterwards, beginning first is handled.On the contrary, in step S110, be judged as other process chamber and carry out under second situation about handling, in step S120, show that by display unit 450 can not carry out first handles.At this moment, for example also can the operator be known to carry out first processing by reporting unit 470 reports.

Afterwards, in step S130～step S150, carry out reservation processing.With regard to reservation processing, at first in step S130, preengage the right to use of the device 300 of removing the evil.Particularly, in the data form of the device right to use subscription information 494 of removing the evil of memory unit 490, the right to use of device 300 (common venting system 310) usefulness of removing the evil is used in reservation.

Afterwards, judge in step S140 whether other process chamber finishes second and handle.Particularly, judge according to the treatment situation management information 492 of memory unit 490.For example if according to treatment situation management information 492, second processing of other process chamber finishes, then because second project of handling of other process chamber becomes " 0 " from " 1 ", so, then can be judged as other process chamber and finish second processing in case this project becomes " 0 ".In addition, in step S140, be judged as other process chamber and do not finish under second situation about handling, wait by the time other process chamber finishes second processing.

In above-mentioned steps S140, be judged as under the situation that second processing of other process chamber finishes, in step S150, judge whether to obtain the right to use of the device 300 of removing the evil.Particularly, judge according to the order of reservation in the device right to use subscription information 494 of removing the evil.In addition, can obtain under the usufructuary situation of the device 300 of removing the evil in judgement, for example judge by treatment situation management information 492 whether other process chamber carries out second and handle, and do not carry out under second situation about handling being judged as other process chamber, be judged as the right to use that can obtain the device 300 of removing the evil, move to step S160 processing afterwards, beginning first is handled.

On the contrary, carry out being judged as the right to use that can not obtain the device 300 of removing the evil under second situation about handling being judged as other process chamber, wait by the time obtain the right to use of the device 300 of removing the evil.This is because of parallel the carrying out under second situation about handling in the different disposal chamber, do not become the object of exclusive control, even, handle so also do not carry out first in this case so during other process chamber carried out second processing, other process chamber also began second processing sometimes.By carrying out such reservation processing, the processing of the process chamber of armed state such as can be in automatically.

Below, the situation that beginning first is handled is described.Under the situation that beginning first is handled, at first in step S160, carry out the record of the first processing start information.Particularly, for example set (storage) " 1 " in the first processing project in the data form of treatment situation management information 492.

Afterwards, carrying out first in step S170 handles.First handles (for example thick extraction pump-down process that begins from high pressure state) transfer valve 350 by the open device 300 of removing the evil, and common venting system 310 is switched to the non-common venting system 330 of removing the evil carry out.Thus, the exhaust of discharging from process chamber is vented to for example gas extraction system of factory without the parts 340 of removing the evil with regard to former state.

Afterwards, judge in step S180 whether first processing finishes.Finish if in step S180, be judged as first processing, then in step S190, carry out the record of the first processing ending message.Particularly, for example set (storage) " 0 " in the first processing project in the data form of treatment situation management information 492.Like this, finish to comprise with a series of first of the second exclusive control of handling and handle.

Control when carrying out first processing of present embodiment in view of the above, during arbitrary process chamber carried out second processing (for example following the processed of the wafer W of the exhaust that must remove the evil), other all process chambers did not carry out first and handle (the thick extraction pump-down process that for example needn't remove the evil).Therefore, carry out second at arbitrary process chamber and handle, the device 300 of removing the evil is removed the evil between exhaust cycle by the common venting system 320 of removing the evil, and can the device 300 of removing the evil not switched to the non-exhaust of removing the evil based on the non-common venting system 330 of removing the evil midway.Thus, the device 300 that can prevent from not removed the evil discharges the exhaust that must remove the evil with removing the evil.

For example, as shown in Figure 5, carrying out second at process chamber 200B handles, the processed of the wafer W of for example must exhaust removing the evil, implement removing the evil between exhaust cycle through the parts 340 of removing the evil of the device 300 of removing the evil, other process chamber, for example the process chamber 200A thick extraction pump-down process that begins from atmospheric pressure state of not carrying out first handling, for example needn't exhaust removing the evil.Therefore, as shown in Figure 6, owing to handle midway the not transfer valve 350 of the open device 300 of removing the evil, so can prevent from not to be discharged exhaust from process chamber 200B by the device 300 of removing the evil at second of process chamber 200B with removing the evil.

In addition, carry out second at certain process chamber and handle, for example during the processed of wafer W, the automatic inspection that other process chamber does not comprise the thick extraction pump-down process of first handling, for example beginning from atmospheric pressure state is handled or is safeguarded and handle.

At this moment, as mentioned above, also automatic inspection can be handled or safeguards that handling integral body handles as first, do not carry out these processing, in addition, also can only the thick extraction pump-down process part that begins from atmospheric pressure state in automatic inspection processing or the maintenance processing be handled as first, only not carry out these processing.This is because of in the processing of carrying out at certain process chamber as second wafer W of handling, if other process chamber does not carry out the thick extraction pump-down process that begins from atmospheric pressure state at least simultaneously, then the device 300 of removing the evil can not switched to the non-common venting system 330 of removing the evil, so the device 300 that can prevent from not removed the evil discharges the exhaust that must remove the evil with removing the evil.

Therefore, under these circumstances, in certain process chamber carries out processing as second wafer W of handling, even can beginning to carry out automatic inspection, other process chamber handles or safeguards processing, carry out from stage of extraction pump-down process mutually that atmospheric pressure state begins also by exclusive control, can not carry out this thick pump-down process of extracting out.

In addition, in comprising first instantiation of handling of exclusive processing shown in Figure 12, owing to when carrying out first processing (for example thick extraction pump-down process that begins from atmospheric pressure state) respectively in the different disposal chamber, do not carry out exclusive processing, each process chamber can carry out first processing simultaneously sometimes.At this moment, owing to needn't remove the evil to the arbitrary exhaust from the different disposal chamber, so even the device 300 of removing the evil also is out of question without parts 340 exhausts of removing the evil.

But, carry out first respectively in the different disposal chamber and handle under the situation of (the thick extraction pump-down process that for example begins), because the beginning timing difference that first in the chambers handled, the pressure state difference in the process chamber sometimes from atmospheric pressure state.Under these circumstances, worry to produce the adverse current of exhaust to the low process chamber of pressure from the high process chamber of pressure.Therefore, being preferably in different process chambers carries out respectively also carrying out exclusive control under first situation about handling.At this moment, for example, second processing shown in Figure 12 handles as long as being replaced into first.Thus, can prevent that the different disposal chamber from carrying out first simultaneously and handling, so can prevent the exhaust adverse current in chambers really.

(concrete example of the control when carrying out second processing)

The concrete example of the control when chambers 200A～200D carries out second processing (for example processed of wafer W) at first, is described.Figure 13 is that second the flow chart of control instantiation when handling is carried out in expression.As shown in figure 13, the chamber of managing carries out at first carrying out exclusive processing (step S200～step S250) under second situation about handling throughout, afterwards, beginning second processing (step S260～S290).

In this exclusive control, at first in step S200, judge whether the process chamber that stand-by appointment is handled.Particularly, judge in the form of the device right to use subscription information 494 of removing the evil whether the processing (task) of having preengage is arranged.This be because if having in the form of device right to use subscription information 494 of removing the evil preengage etc. the processing of pending other process chamber, then should handle preferential.

In step S200, be judged as the process chamber that stand-by appointment is handled, have in the form of the device right to use of promptly removing the evil subscription information 494 under the situation of processing (task) of reservation, in step S220, show that by display unit 450 can not carry out second handles, and moves to step S230 aftermentioned reservation processing afterwards.This is for preventing that the different disposal chamber from carrying out first simultaneously and handling and second handle.In addition, at this moment, for example also can the operator be known to carry out second processing by reporting unit 470 reports.

In addition, in step S200, be judged as the process chamber that no stand-by appointment is handled, do not have under the situation of the processing (task) of preengaging in the form of the device right to use of promptly removing the evil subscription information 494, judge whether among the step S210 that other process chamber carries out first and handles.This is for preventing that the different disposal chamber from carrying out first simultaneously and handling and second handle.Particularly, judge according to the treatment situation management information 492 of memory unit 490.

Be judged as other process chamber and do not carry out under the situation of first processing (for example thick extraction pump-down process that begins from atmospheric pressure state) in step S210, move to step S260 processing afterwards, beginning second is handled.On the contrary, in step S210, be judged as other process chamber and carry out under first situation about handling, in step S220, show that by display unit 450 can not carry out second handles.At this moment, for example also can the operator be known to carry out second processing by reporting unit 470 reports.

Afterwards, in step S230～step S250, carry out reservation processing.With regard to reservation processing, at first in step S230, preengage the right to use of the device 300 of removing the evil.Particularly, in the data form of the device right to use subscription information 494 of removing the evil of memory unit 490, the right to use of device 300 (common venting system 310) usefulness of removing the evil is used in reservation.

Afterwards, judge in step S240 whether other process chamber finishes first and handle.Particularly, judge according to the treatment situation management information 492 of memory unit 490.For example if according to treatment situation management information 492, first processing of other process chamber finishes, then because first project of handling of other process chamber becomes " 0 " from " 1 ", so, then can be judged as other process chamber and finish first processing in case this project becomes " 0 ".In addition, in step S240, be judged as other process chamber and do not finish under first situation about handling, wait by the time other process chamber finishes first processing.

In above-mentioned steps S240, be judged as under the situation that first processing of other process chamber finishes, in step S250, judge whether to obtain the right to use of the device 300 of removing the evil.Particularly, judge according to the order of reservation in the device right to use subscription information 494 of removing the evil.In addition, can obtain under the usufructuary situation of the device 300 of removing the evil in judgement, for example judge by treatment situation management information 492 whether other process chamber does not carry out first and handle, and do not carry out under first situation about handling being judged as other process chamber, be judged as the right to use that can obtain the device 300 of removing the evil, move to step S260 processing afterwards, beginning second is handled.

On the contrary, carry out being judged as the right to use that can not obtain the device 300 of removing the evil under first situation about handling being judged as other process chamber, wait by the time obtain the right to use of the device 300 of removing the evil.This is because of parallel the carrying out under first situation about handling in the different disposal chamber, do not become the object of exclusive control, even, handle so also do not carry out second in this case so during other process chamber carried out first processing, other process chamber also began first processing sometimes.

Below, the situation that beginning second is handled is described.Under the situation that beginning second is handled, at first in step S260, carry out the record of the second processing start information.Particularly, for example set (storage) " 1 " in the second processing project in the data form of treatment situation management information 492.

Afterwards, carrying out second in step S270 handles.Second handles (for example processed of wafer W) by closing the transfer valve 350 of the device 300 of removing the evil, and common venting system 310 is switched to the common venting system 320 of removing the evil carry out.Thus, the exhaust of discharging from process chamber is discharged into for example gas extraction system of factory after removing the evil through the parts 340 of removing the evil.

Afterwards, judge in step S280 whether second processing finishes.Finish if in step S280, be judged as second processing, then in step S290, carry out the record of the second processing ending message.Particularly, for example set (storage) " 0 " in the second processing project in the data form of treatment situation management information 492.Like this, finish to comprise with a series of second of the first exclusive control of handling and handle.

According to second the control when handling of carrying out present embodiment like this, arbitrary process chamber carry out first handle (for example thick extraction pump-down process that begins from high pressure state) during, other all process chambers do not carry out second processing (for example processed of the wafer W of carrying out) that essential exhaust is removed the evil under low pressure state.Therefore, carry out first at arbitrary process chamber and handle, the device 300 of removing the evil carries out non-removing the evil between exhaust cycle by the non-common venting system 330 of removing the evil, and can the device 300 of removing the evil not switched to the exhaust of removing the evil based on the common venting system 320 of removing the evil midway.Thus, can prevent before the processing that the pressure state from high that needn't remove the evil begins that the device 300 of removing the evil is through removing the evil parts 340 exhausts, so can alleviate the burden of the device 300 of removing the evil.

For example, as shown in Figure 7, carrying out first at process chamber 200B handles, the thick extraction pump-down process that begins from atmospheric pressure state for example as high pressure state, enforcement is removed the evil between exhaust cycle without the non-of the parts 340 of removing the evil of the device 300 of removing the evil, other process chamber, for example process chamber 200A does not carry out the processed of second wafer W of handling, for example carrying out under low pressure state.Therefore, as shown in Figure 8,, can prevent the exhaust of parts 340 dischargings of removing the evil from process chamber 200B through the device 300 of removing the evil owing to do not close the transfer valve 350 of the device 300 of removing the evil midway in first processing of process chamber 200B.Thus, can alleviate the burden of the device 300 of removing the evil.

In addition, at this moment, during the thick extraction pump-down process of carrying out beginning, wafer W is not moved into process chamber, for example make common carrying room 150 standbies from atmospheric pressure state.This is because owing to worrying residual processing gas or the precipitation (deopt) that has based on processed in the process chamber, so if make the wafer W standby in process chamber, then worry can be carried out processed.

Therefore, in above-mentioned first handles, except that the thick extraction pump-down process that begins from atmospheric pressure state, also comprise the thick extraction pump-down process that automatic inspection processing or maintenance processing etc. begin from atmospheric pressure state.Therefore, carry out first at certain process chamber and handle, for example automatic inspection is handled or is safeguarded during the processing, and other process chamber does not carry out second to be handled, for example the processed of wafer W.

At this moment, as mentioned above, also can be during automatic inspection being handled or is safeguarded that handling integral body carries out as first processing, other process chamber does not carry out second to be handled, in addition, also the thick extraction pump-down process part that can begin from atmospheric pressure state in only with automatic inspection processing or maintenance processing is handled as first, and during only carrying out these processing, other process chamber does not carry out second processing.This is because of during the thick extraction pump-down process of carrying out at least at certain process chamber beginning from atmospheric pressure state, if other process chamber does not carry out the processed as second wafer W of handling simultaneously, then the device 300 of removing the evil can not switched to the common venting system 320 of removing the evil, so can prevent the exhaust that begins from high pressure state through parts 340 exhausts of removing the evil of device 300 of removing the evil.

Therefore, under these circumstances, even during certain process chamber carries out the automatic inspection processing or safeguards processing, as if the thick extraction pump-down process of not carrying out beginning from atmospheric pressure state, then other process chamber can carry out the processed as second wafer W of handling.On the contrary, during certain process chamber carried out the automatic inspection processing or safeguards the thick extraction pump-down process that begins from atmospheric pressure state in the processing, other process chamber can not carry out the processed as second wafer W of handling.

In addition, in second handles, not only comprise the processed of wafer W, with regard to maintenance processing or clean etc., also be included as to import and handle gas and the processing of open gas importing valve 214.This is because import in the processing of valve 214 at open gas, owing to also follow pump-down process, so in exhaust, import under the situation of the processing gas that must remove the evil, such exhaust must be switched to the common venting system 320 of removing the evil, through parts 340 exhausts of removing the evil of the device 300 of removing the evil.Therefore, carry out first at certain process chamber and handle, for example during the thick extraction pump-down process that begins from atmospheric pressure state, other process chamber can not carry out second to be handled, and for example open gas imports the processing of valve 214.

In addition, in the above-described embodiment, as second handle example wafer W processed begin to the details that finishes as follows.That is, handle the situation of wafer W in the process chamber continuously by whenever a plurality of (for example 1 batches), for example the continuous running from each batch begins to finish to continuous running.In addition, handle one by one at process chamber under the situation of wafer W, for example for being deployed into static in the process chamber of taking out of behind the wafer and removing and finish from wafer W being moved into processing, method for making before the process chamber.At this moment, on one side taking out of the back at wafer and import and handle gas and do not have under the situation of chip cleaning (WLDC), until this no chip cleaning end for removing attachment in the process chamber etc.This is because because the beginning of the processed of this wafer W to end must take the device 300 of removing the evil, handle so must not carry out first betwixt.

In addition, in the processed of wafer W, under the situation that produces the unusual of substrate board treatment 100 and stop to handle, in it recovers to handle, use when removing the evil device 300, or when device 300 is removed the evil in use in the processing after recover handling (for example static removal etc.), cancel reservation for the time being, handle the right to use that obtains the device 300 of removing the evil again for this recovery based on the device right to use subscription information 494 of removing the evil.By first handle with the second exclusive control of handling become etc. pending during, with move to when safeguard handling the same, cancel reservation for the time being, handle the right to use that obtains the device 300 of removing the evil again for this recovery based on the device right to use subscription information 494 of removing the evil.Like this, handle or safeguard under the situation of processing recovering, owing to cancel reservation for the time being based on the device right to use subscription information 494 of removing the evil, so can avoid following defective, promptly owing to the reservation that exists based on other processing of the device right to use subscription information 494 of removing the evil, so recovering processing or safeguarding in the processing and can not use the device 300 of removing the evil.

In addition, moving under the situation that the independent maintenance of safeguarding processing after cutting off process chamber handles, this process chamber does not carry out Figure 12, shown in Figure 13 first to be handled and the second exclusive control of handling.Therefore, in this independent maintenance was handled, no matter whether other process chamber carries out first was handled or second processing, all can carry out first and handle or second processing.In addition, in the use of the device 300 of removing the evil, other process chamber moves under the situation of independent maintenance processing, also can end the use of the device 300 of removing the evil of other process chamber, is using the device 300 of removing the evil in the device right to use subscription information 494 of removing the evil in other process chamber of reservation.

In addition, in first processing and the second exclusive control of handling of above-mentioned execution mode, when explanation is carried out a processing at certain process chamber, carry out when other process chamber under the situation of another processing, the reservation processing of stipulating (the step S130 of Figure 12～step S150 for example, the step S130 of Figure 13～step S150) situation, but be not limited thereto, for example when certain process chamber carries out a processing, carry out at other process chamber under the situation of another processing, also can not carry out reservation processing, make its wrong end.

In addition, above-mentioned reservation processing can not carried out under following situation yet.For example also can handle and carry out under first processing or second situation about handling in the maintenance of being undertaken by the operator, processed when for example safeguarding, the transfer valve 270 of operation auxiliary exhaust system 240 and gas import the processing of valve 214 separately, repeat atmosphere opening and vacuumize, the circularly purifying that remains in the exhaust of the processing gas in the process chamber is handled, atmosphere opening is handled, under the situation of clean etc., these are handled because of above-mentioned first and handle or the second exclusive processing of handling becomes etc. under the pending situation, do not carry out above-mentioned reservation processing, for example can not carry out because of interlocking.This is because under the situation of these processing, because in most cases the operator monitors substrate board treatment 100, so needn't carry out automatically by reservation processing, the operation that can freely carry out the operator makes device easy to use.

In addition, in the above-described embodiment, explanation is connected in the common device 300 of removing the evil across common venting system 310 situation on gas extraction system 220A～220D of all process chamber 200A～200D that substrate board treatment 100 possesses, if but plural at least process chamber then also can be connected on the gas extraction system of process chamber of a part across the common venting system device of will removing the evil.

For example, also can first device of removing the evil be connected on process chamber 200A and the 200B, second device of removing the evil be connected on process chamber 200C and the 200D across second common venting system across first common venting system.At this moment, each process chamber that is connected on each common venting system is carried out first processing and the second exclusive control of handling of present embodiment.In addition, also can be connected in process chamber 200A～200C, other device of removing the evil only is connected in process chamber 200D across the common venting system device of will removing the evil.At this moment, process chamber 200A～200C being carried out first of present embodiment handles and the second exclusive control of handling.

In addition, in the common venting system 310 of above-mentioned execution mode, explanation will be across the common venting system 320 of removing the evil of parts 340 exhausts of removing the evil with not being arranged on situation in the device 300 of removing the evil across the non-common venting system 330 of removing the evil of parts 340 exhausts of removing the evil, but be not limited thereto, also the common venting system 320 of removing the evil can only be set in the device 300 of removing the evil, the non-common venting system 330 of removing the evil is provided with separately with the device 320 of removing the evil.Thus, also can apply the present invention to not form the device 300 of removing the evil of the non-common venting system 330 of removing the evil.

In addition, as mentioned above, gas delivery system 210 is not limited to formation shown in Figure 2.Much less, though this gas delivery system 210 according to any formations such as gaseous species that for example imports process chamber 200 or flows all applicable to the present invention.Particularly, under the situation that for example imports multiple gases, the conductor import system of a plurality of connection gas supply sources and gas importing valve (gas importing valve) can be set also, constitute the pipe arrangement formation that back, all gases interflow imports process chamber 200 according to every kind of gas.At this moment, can gas delivery system be set to each of a plurality of processing gases, in addition, will with the mist of inert gas with dealing with under the situation of gas, also the gas delivery system of this inert gas can be appended in the gas delivery system of handling gas.And, also can append the inert gas import system, the gas delivery system of using as atmosphere opening.

Configuration example when constituting gas delivery system 210 shown in Figure 2 with reference to Figure 14 explanation by handling gas delivery system and inert gas import system here.Here, when when carrying out processing of wafers and by gas percussion, carrying out particle reduction processing, use the inert gas import system.When carrying out processing of wafers, with the inert gas (N for example of regulation flow ₂Gas) for example as pressure adjustment gas, import continuously in the process chamber with handling gas, reduce when handling when carry out particle by the gas percussion ripple, with the inert gas of big flow (N for example ₂Gas) for example import in the process chamber continuously as passivation gas.In addition, the situation with Fig. 2 is the same below, omits A～D and represent explanation from the symbol of the inscape of expression chambers 200A～200D.Therefore, for example the situation of process chamber 200 is represented chambers 200A～200D, and the situation of gas delivery system 210 is represented gas delivery system 210A～210D of chambers 200A～200D.

Gas delivery system 210 shown in Figure 14 is connected on the process chamber 200 after constituting each pipe arrangement interflow of handling gas delivery system 510 and inert gas import system 520.Handle gas delivery system 510, for example possess the gas of processing supply source 512 and import valve (gas importing valve) 514 with gas.In addition, handle gas delivery system 510 and also can be being set up in parallel a plurality ofly according to the kind of handling gas, the pipe arrangement that back, the body of regulating the flow of vital energy everywhere interflow imports process chamber 200 constitutes.

Inert gas import system 520 for example possesses inert gas supply source 522, and the low discharge that connection arranged side by side can be stipulated will import the low discharge import system (first import system) 530 of process chamber 200 from the inert gas of inert gas supply source 522; With can be than importing the big flow import system (second import system) 540 of process chamber 200 from the inert gas of inert gas supply source 522 with the big flows of low discharge import system 530.

Low discharge import system 530 possesses and will adjust to the choke valve 532 of regulation flow from the inert gas of inert gas supply source 522; Import valve (gas importing valve) 534 with gas.As choke valve 532, for example can constitute by standing valves such as throttle orifice (orifice), choke valves, also can constitute by the fine-tuning vario valve of flow.In addition, also can constitute gas and import valve 534 and choke valve 532 by a throttling ports valve.When this low discharge import system 530 is used for when will handle gas importing process chamber 200 for for example processing of wafers in, with N ₂Inert gases such as gas import situation in the process chamber 200 as the pressure adjustment with gas.Use when in such processing of wafers under the situation of low discharge import system 530, the flow set of the inert gas that will adjust by choke valve 532 is the flow of the degree of the pressure that can adjust process chamber 200.

Big flow import system 540 imports valve (gas importing valve) 542 through gas and is connected in the downstream of above-mentioned low discharge import system 530.This big flow import system 540 is for example using when inert gas is removed the clean of particle in the process chamber 200 etc. while importing.As this clean, for example have following particle to reduce to handle (NPPC), promptly by on one side with big flow with N ₂Inert gases such as gas import exhausts on one side in the process chamber 200, utilize the shock wave (ShockWave: surpass the pressure wave that velocity of sound is propagated) that produces under the rated condition, in exhaust, discharge particle that inwall in the process chamber 200 etc. peels off etc.Reduce when handling at this particle and to use under the situation of big flow import system 540, the inert gas flow of big flow import system 540 be the flow that can remove the degree of the interior particle of process chamber 200 etc. by the gas percussion ripple.

In addition, in pipe arrangement configuration example shown in Figure 14, illustrate that the low discharge import system 530 by two systems constitutes the situation of inert gas import system 520 with big flow import system 540, but be not limited thereto.For example, also can be made of inert gas import system 520 import system of a system, by flow rate regulating valve, the flow with inert gas when processing of wafers is adjusted into low discharge, when particle reduce to be handled, the flow of inert gas is adjusted into big flow.But no matter which kind of constitutes, owing to when processing of wafers inert gas is adjusted gas as pressure, so when when processing of wafers the flow of inert gas being become low discharge, must guarantee the flow of stipulating all the time.

But, as mentioned above, if constitute inert gas import system 520, then owing to the adjustment that repeats by flow rate regulating valve from big flow to low discharge by a system, so because of the performance difference of flow rate regulating valve, it is constant that the flow when being difficult to sometimes will become low discharge all the time keeps.This respect as shown in figure 14, inert gas import system 520 being set under the situation of two systems, does not need to adjust to from big flow the flow rate regulating valve of low discharge, can cheap formation guarantees the flow of stipulating all the time.In addition, by inert gas import system 520 being set at two systems, also transfiguration is easy for the switching controls of the common venting system 310 in the device 300 of removing the evil described later.

When the process chamber 200 that is made of such pipe arrangement shown in Figure 14 carries out the processing of wafer W, at first, under the state of the sluice valve of closing this process chamber 200, the situation of the process chamber 200 that constitutes with pipe arrangement shown in Figure 2 is the same, vacuumize processing, with the authorized pressure that reduces pressure in the process chamber 200.Afterwards, finish, then open sluice valve, wafer W is inserted process chamber 200 if vacuumize processing.If wafer W is loaded on the loading stage, then close sluice valve, move to the treatment process of wafer W.

At this moment, for example shown in Figure 15, close transfer valve 270, gas extraction system 220 is become main exhaust system 230.Under this state, gas by open treated gas delivery system 510 imports valve 514, the regulate the flow of vital energy processing gas of body supply source 512 of getting along alone in the future imports in the process chamber 200, the gas importing valve 542 of cutting out inert gas import system 520 simultaneously is constant, open gas imports valve 534, thereby will import in the process chamber 200 from the inert gas (for example N2 gas) of inert gas supply source 522 through low discharge import system 530, begin the processing of wafer W thus.At this moment, inert gas maintains authorized pressure as pressure adjustment gas with the pressure in the process chamber 200.Under this state, carry out the processing of above-mentioned wafer W at the appointed time.

In the processing of such wafer W, use under the situation of the processing gas that comprises harmful components, as mentioned above, owing to discharge the discharge gas that comprises harmful components from process chamber 200, so, common venting system 310 is switched to the common venting system 320 of removing the evil by closing the transfer valve 350 of the device 300 of removing the evil.Thus, after the exhaust that when the wafer W of removing the evil is handled, produces, for example can carry out exhaust to the gas extraction system of factory from process chamber 200.

Afterwards, the finishing dealing with of wafer W, take out of wafer after, for example reduce under the situation about handling carrying out above-mentioned particle, open transfer valve 270 becomes auxiliary exhaust system 240 with gas extraction system 220.Then, the gas that imports valve 514 and inert gas import system 520 at the gas of handling gas delivery system 510 imports under valve 534 closing state, import valve 542 by open gas, will be through excessive flow import system 540 from the inert gas of inert gas supply source 522 (N for example ₂Gas) import in the process chamber 200.Thus, by inert gas (N for example ₂Gas) gas percussion ripple is peeled off attached to the particle on process chamber 200 inwalls etc., discharges in exhaust.

Reduce in the processing at such particle, owing to use the N that does not comprise harmful components ₂Inert gases such as gas are so needn't be removed the evil by the device 300 of removing the evil.Be not limited thereto, parts 340 exhausts of removing the evil of device 300 if process is removed the evil, the burden of the device 300 of then removing the evil increases.Therefore, reduce when handling carrying out this particle, the same with the situation of above-mentioned circularly purifying, eject exhaust without the parts 340 of removing the evil from process chamber 200.Particularly, as shown in figure 16, the transfer valve 350 by the open device 300 of removing the evil switches to the non-common venting system 330 of removing the evil with common venting system 310.Thus, can alleviate the burden of the device 300 of removing the evil.

In addition, reduce in the processing at particle, as shown in figure 16, only use big flow import system 540 that inert gas is imported process chamber 200, but also can open gas import valve 542,534 both, use big flow import system 540 and low discharge import system 530 both, inert gas is imported process chamber 200.Thus, the inert gas of bigger flow can be imported process chamber 200.

In addition, under the parallel situations about handling such as process chamber 200A, 200B that pipe arrangement shown in Figure 14 constitutes, carry out based on Figure 12, first processing shown in Figure 13, the exclusive processing of second processing.At this moment, as shown in figure 15, when importing the processing gases by processing gas delivery system 510, import the processing of inert gas by low discharge import system 530, for example purified treatment is carried out after common venting system 310 is switched to the common venting system 320 of removing the evil, and handles so be equivalent to second.On the contrary, import the processing of inert gas by big flow import system 540 (or big flow import system 540 and low discharge import system 530 both), for example the particle reduction is handled and is carried out after common venting system 310 being switched to the non-common venting system 330 of removing the evil, and handles so be equivalent to first.

By carrying out so exclusive processing, during for example process chamber 200A is equivalent to second processing of wafers of handling, other process chamber 200B etc. is not equivalent to first particle of handling and reduces processing, on the contrary, during process chamber 200A was equivalent to the first particle reduction processing of handling, other process chamber 200B etc. was not equivalent to second processing of wafers of handling.Thus, can prevent that the different disposal chamber from carrying out above-mentioned first simultaneously and handling and above-mentioned second processing.Therefore, with regard to the substrate board treatment that possesses the process chamber 200 that pipe arrangement shown in Figure 14 constitutes, can alleviate the burden of the device 300 of removing the evil, prevent the exhaust that discharge must be removed the evil really with not removing the evil.

Below, with reference to other configuration example of gas delivery system 210 shown in description of drawings Fig. 2.Figure 17 is the block diagram of other configuration example of expression gas delivery system 210.Configuration example shown in Figure 17 is to constitute by import inert gas (N for example in process chamber ₂Gas), make inert gas import system shown in Figure 14 become the concrete example of the atmosphere opening system of atmosphere opening.Here, use during except that the atmosphere opening in carrying out process chamber such inert gas import system, the particle reduction in carrying out process chamber is handled (two stage NPPC for example described later) time and is also used.

Gas delivery system 210 shown in Figure 17 constitutes handles gas delivery system 610 and each pipe arrangement interflow as the inert gas import system 620 of atmosphere opening system, is connected in process chamber 200 through main valve (main valve) 602.Handle gas delivery system 610 and for example possess the gas of processing supply source 612, upstream side gas importing valve (upstream side gas imports valve) 614, flow controller (for example mass flow controller) 615, downstream gas importing valve (downstream gas imports valve) 616.In addition, handle gas delivery system 610 also can according to the kind of handling gas be set up in parallel a plurality of, the pipe arrangement that back, body interflow imports process chamber 200 of regulating the flow of vital energy constitutes everywhere.

Inert gas import system 620 for example possesses inert gas supply source 622, and the low discharge that connection can be certain will import the low discharge import system (first import system) 630 of process chamber 200 from the inert gas of inert gas supply source 622 side by side; With can will import the big flow import system (second import system) 640 of process chamber 200 from the inert gas of inert gas supply source 622 by the flows bigger than low discharge import system 630.

Low discharge import system 630 possesses and will adjust to the air throttle 632 of regulation flow from the inert gas of inert gas supply source 622; Import valve (downstream gas imports valve) 636 with downstream gas.As air throttle 632, for example can constitute by standing valves such as throttle orifice, choke valves, also can constitute by the fine-tuning vario valve of flow.In addition, also can constitute downstream gas and import valve 636 and air throttle 632 by a throttling ports valve.Big flow import system 640 imports valve (downstream gas imports valve) 646 through downstream gas and is connected in the downstream of above-mentioned low discharge import system 630.

Handling gas delivery system 610 is connected communicating pipe 604 with inert gas import system 620 processes.Particularly, the downstream of the upstream side gas importing valve 614 of processing gas delivery system 610 imports the downstream of valve 624 through possessing being connected communicating pipe 604 of communicating valve 606 with the upstream side gas of inert gas import system 620.By open this communicating valve 606, from the inert gas of inert gas import system 620 through after communicating pipe 604, respectively through flow regulator 615, the downstream gas of processing gas delivery system 610 import valve 616, main valve 602 imports process chambers 200.Thus, on one side can be on one side import process chamber 200 from the inert gas of inert gas import system 620 by the flow regulator 615 flow adjustment of handling gas delivery system 610.

Below, the concrete example of the clean that the process chamber 200 that is made of pipe arrangement shown in Figure 17 carries out is described.The clean here for example is that particle reduces processing (NPPC), when inciting somebody to action for example N with big flow ₂When inert gases such as gas temporarily import in the process chamber 200, in exhaust, discharge the particle peeled off by the shock wave (Shock Wave: surpass the pressure wave that velocity of sound is propagated) that under rated condition, the produces inwall in the process chamber 200 etc. etc.

Such particle reduces to handle and is undertaken by control for example shown in Figure 180 by control part 400.Figure 18 is that the flow chart that particle reduces the control concrete example when handling is carried out in expression.The particle here reduces handles (NPPC) as shown in figure 18, constitutes by reducing a NPPC (step S300) who handles as first particle and reducing the NPPC in the 2nd NPPC two stages such as (step S400) of handling as second particle.The one NPPC is common NPPC, is the low pressure NPPC that carries out under environment under low pressure.In addition, the 2nd NPPC is the NPPC that comprises by the clean of gas percussion ripple, is the high pressure NPPC that carries out under hyperbaric environment.

The processing concrete example of the one NPPC (step S300) at first is described with reference to Figure 19 here.The one NPPC at first carries out early stage and checks as shown in figure 19 in step S310.Carry out checking early stage to be to check whether process chamber 200 is in the state that can normally carry out NPPC.For example, under the situation of the processing of carrying out wafer, in process chamber, there is the situation of wafer or from process chamber, takes out of under the situation midway of wafer, or situation about safeguarding etc., process chamber 200 is not the state that can normally carry out NPPC.

As the situation of carrying out processing of wafers, for example handle in the importing of gas, be used for the importing of curing gas of the temperature adjustment etc. of wafer, absorption keeps in the control of electrostatic chuck of wafer, and the control of high frequency electric source is medium.As midway the situation of taking out of of wafer, for example can enumerate in the opening of lock of process chamber.As situation about safeguarding, for example in the opening of the lid of process chamber.

Under these circumstances, process chamber 200 is not the state that can normally carry out NPPC.Therefore, these items of pre-incident survey are not can normally carry out under the situation of state of NPPC being judged as process chamber 200, and mistake for example finishes that NPPC handles, being judged as process chamber 200 is can normally carry out under the situation of state of NPPC, carries out the processing after the step S312.

Afterwards, in step S312, lead the extraction pump-down process.Particularly, by main pump 260 high vacuum that is vented to regulation in the process chamber 200 is pressed.In addition, even for example do not reach situation that the high vacuum of regulation presses because of overtime and wrong end through the stipulated time yet.Then, in step S314, for example begin to carry out pressure control, pressure when making the cleaning that becomes regulation in the process chamber 200 by the not shown pressure-regulating valve (APC) of main exhaust system 230.

Afterwards, in step S316 with inert gas (N for example ₂Gas) import in the process chamber 200.Here, import inert gas through communicating pipe 604 from handling gas delivery system 610.Particularly, for example shown in Figure 21, the downstream gas importing valve 636,646 of cutting out inert gas import system 620 is constant, open upstream side gas imports valve 624, communicating valve 606, simultaneously, it is constant to close the upstream side gas importing valve 614 of handling gas delivery system 610, and open downstream gas imports valve 616, main valve 602.Thus, from the inert gas of inert gas supply source 622 (N for example ₂Gas) import in the process chamber 200 from handling gas delivery system 610 through communicating pipe 604.

In addition, whether the pressure in step S318 in the judgment processing chamber 200 is stable, if be judged as the pressure stability in the process chamber 200, then applies voltage control in step S320.Here, for example control being used for wafer absorption is remained on the voltage that applies of electrostatic chuck on the lower electrode.Particularly, repeat to apply the reversal control stipulated number (for example 5 times) of voltage, be about to the voltage that applies of electrostatic chuck is just become, after the stipulated time (for example 2 seconds), disconnect (0), afterwards, will become negative the voltage that applies of electrostatic chuck, after the stipulated time (for example 2 seconds), disconnect (0).Thus, owing to the particles in the process chamber 200 easily disperse, so can effectively remove particle.Finish pressure control when then in step S322, stopping to clean if apply the control of voltage like this.For example the not shown pressure-regulating valve (APC) with main exhaust system 230 becomes standard-sized sheet.

Afterwards, after the upstream side gas of closing inert gas import system 620 in step S324 imports valve 624, stop the importing of inert gas.At this moment, the downstream gas of communicating valve 606, processing gas delivery system 610 imports valve 616, main valve 602 keeps open constant.Under this state,, discharge and handle gas delivery system 610 and the residual gas in communicating pipe 604 by in step S326, vacuumizing processing.

Afterwards, in step S328, lead the extraction pump-down process once more.Particularly, by main pump 260 exhausts, the high vacuum that reaches regulation in process chamber 200 is pressed.In addition, even for example under the situation that the high vacuum that does not also reach regulation through the stipulated time is pressed, because of overtime and wrong end.Like this, finish an a series of NPPC, then carry out the 2nd NPPC.

Below, the concrete example of the processing of the 2nd NPPC (step S400) is described with reference to Figure 20.The 2nd NPPC at first closes the not shown pressure-regulating valve (APC) of for example main exhaust system 230 as shown in figure 20 in step S410, stop the main pump-down process of extracting out.Afterwards, the thick pump-down process of extracting out of beginning in step S412.Particularly, drive auxiliary pump 250, through carrying out exhaust in 240 pairs of process chambers 200 of auxiliary exhaust system.In addition, when carrying out the processing of the 2nd NPPC, be the protection pressure vacuum ga(u)ge, preferably at the protective valve of closing pressure vacuum ga(u)ge at first of the 2nd NPPC.

Afterwards, in step S414, in process chamber 200, import inert gas by inert gas import system 620 as the atmosphere opening system.Here, both import inert gas to utilize low discharge import system 630 and big flow import system 640.Particularly, as shown in figure 22, open downstream gas imports valve 636,646, main valve 602 when open upstream side gas imports valve 624, imports inert gas.In addition, in step S416, wait for through official hour (for example 5 seconds).If through the stipulated time, the downstream gas of then closing big flow import system 630 in step S418 imports valve 646, and is for example shown in Figure 23, only imports inert gas from low discharge import system 640.

Afterwards, in step S420, apply voltage control.As the voltage control that applies here, for example carry out the processing the same with step S320.Afterwards, in step S422, stop to import inert gas, in step S424, finish the thick pump-down process of extracting out.Particularly, it is constant at first slightly to extract pump-down process out, and under main valve 602 opened state, the upstream side gas of closing inert gas import system 620 imports valve 624 and downstream gas importing valve 646, stop to import inert gas, wait for through official hour.Thus, can remove residual particle.In addition, if, then stop auxiliary pump 250, finish the thick pump-down process of extracting out through official hour.

Then, in step S426, drive main pump 260, lead the extraction pump-down process, finish a series of the 2nd NPPC.In addition, also can repeat the 2nd such NPPC of stipulated number.

Reduce according to such particle shown in Figure 180 and to handle (NPPC), because the NPPC in a NPPC who carries out under environment under low pressure, carrying out and two stages such as the 2nd NPPC of under hyperbaric environment, carrying out, so can effectively remove particle in the process chamber 200 etc.In addition, according to the 2nd NPPC, by at the appointed time in (for example 5 seconds), promptly temporary transient in process chamber 200 inert gas (the N for example of the big flow of importing ₂Gas), produce the gas percussion ripple thus, so can effectively peel off attached to the particle on process chamber 200 inwalls etc.

In addition, with regard to particle shown in Figure 180 reduces processing (NPPC), as mentioned above, the processing that process chamber 200 carries out be at least needn't exhaust the situation of removing the evil, beginning the processing carried out from high pressure state (for example 50Torr[66.6hPa] more than) under, common venting system 3 10 is switched to the non-common venting system 330 of removing the evil, under the situation of in addition processing, common venting system 310 is switched to the common venting system 320 of removing the evil.Thus, with regard to particle shown in Figure 180 reduces processing (NPPC), can alleviate the burden of the device 300 of removing the evil.

But, carrying out particle shown in Figure 180 simultaneously at a plurality of process chambers reduces under the situation of the NPPC, the 2nd NPPC that handle (NPPC), if the chambers internal pressure is ratio such as 50Torr[66.6hPa] low pressure state, then in the chambers respectively as Figure 21～shown in Figure 23, common venting system 320 makes common venting system 310 exhausts through the parts 340 of removing the evil by removing the evil.Therefore, if the 2nd NPPC is the processing that imports continuously the inert gas of big flow as shown in figure 14,, think that then the remove the evil burden of device 300 becomes big then if the inert gas of the big flow of a plurality of process chambers continuous blow-downs simultaneously.

Just in this point, according to the 2nd NPPC shown in Figure 20, the inert gas of the big flow of discontinuous importing, the only temporary transient inert gas that imports big flow.Therefore, according to the 2nd NPPC shown in Figure 20, even a plurality of process chamber carries out the 2nd NPPC simultaneously, also because the inert gas required time of the big flow of exhaust is extremely short, so compare with the situation of the inert gas of the big flow of continuous importing, can alleviate the burden of the device 300 of removing the evil significantly.

In addition, particle reduction processing (NPPC) shown in Figure 180 is for example carried out when safeguarding processing.In addition, particle shown in Figure 180 reduces handles (NPPC) by automatic inspection processing (checking oneself processing), carries out with the predetermined processing number of every period stipulated time or every wafer.At this moment, extract pump-down process (step S312) out before carrying out the main of a NPPC shown in Figure 19, stop to utilize inert gas (N for example ₂Gas) purified treatment, it is medium for example to show in display unit 450 that NPPC carries out, simultaneously, and in the main extraction pump-down process (step S426) of carrying out the 2nd NPPC shown in Figure 20 afterwards, the NPPC that eliminates in the display unit 450 carries out medium demonstration, again by inert gas (N for example ₂Gas) beginning purified treatment.

For example handling predetermined processing number that (checking oneself processings) be set at every period stipulated time or every wafer in automatic inspection carries out particle shown in Figure 180 and reduces under the situation of processing (NPPC), consideration is carried out on 25 ground of each batch moving to particle and reducing the situation of handling (NPPC) in the batch processing way of processing of wafers.In the case, owing to also consider by inert gas (N for example ₂Gas) carry out moving in the purified treatment particle and reduce the situation of handling (NPPC), so after stopping the purified treatment of inert gas, need move to particle and reduce processing (NPPC).On the contrary, under situation about safeguard handling, move to safeguard handle before because purified treatment do not finish, so needn't stop the processing to begin again after the purified treatment of inert gas.

In addition, particle shown in Figure 180 reduces handles (NPPC) not only to process chamber 200, also can carry out load locking room 160.At this moment, also can repeat repeatedly particle and reduce processing (NPPC).

In addition, the present invention who describes in detail by above-mentioned execution mode is both applicable to the system that is made of a plurality of equipment, also applicable to the device that is made of an equipment.Much less, the medium such as medium of program of software of storage being realized the function of above-mentioned execution mode offer system or device, the computer of this system or device (or CPU or MPU) reads and moves the program in the medium such as being stored in medium, realizes the present invention thus.

At this moment, the program that reads from medium such as medium self realizes the function of above-mentioned execution mode, and the medium such as medium of storing this program constitute the present invention.As the medium such as medium that provide program to use, for example can use the download of soft (registered trade mark) dish, hard disk, CD, photomagneto disk, CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW, tape, Nonvolatile memory card, ROM or process network etc.

In addition, by the program that the operation computer reads, not only realize the function of above-mentioned execution mode, according to the indication of this program, Yun Zhuan OS etc. carries out part or all of actual treatment on computers, realizes that by this processing the situation of the function of above-mentioned execution mode also is contained among the present invention.

And, after the program that will read from medium such as medium writes in the memory that is equipped with in the functional expansion unit that the expansion board inserted in the computer or computer connect, indication according to this program, part or all of operation such as the CPU that is equipped with in this function diffuser plate or functional expansion unit actual treatment realizes that by this processing the situation of the function of above-mentioned execution mode also is contained among the present invention.

Above with reference to description of drawings preferred forms of the present invention, but much less, the invention is not restricted to above-mentioned example.To those skilled in the art, in the category that the scope of claim is put down in writing, various modifications or correction example are conspicuous, belong to technical scope of the present invention certainly.

For example, in the above-described embodiment, illustrate processing unit connects the so-called beaming type of a plurality of process chambers around common carrying room substrate board treatment, but removing processing unit is connected in load locking room on the process chamber, on the carrying unit, connect side by side outside the substrate board treatment etc. of so-called tandem type of a plurality of processing units, produce also applicable the present invention in the various types of substrate board treatments that shut down unusually because of substrate board treatment.

Utilizability on the industry

The present invention is applicable to possessing the row who discharges in the processing substrate such as semiconductor wafer or crystal liquid substrate Go out substrate board treatment, the control method of substrate board treatment, the journey of the device of removing the evil that gas removes the evil Order.

Claims (24)

1. substrate board treatment is characterized in that possessing:

Import gas and carry out a plurality of process chambers of predetermined process;

Be separately positioned on the gas extraction system in the described chambers;

The common venting system that connects the gas extraction system of plural at least process chamber in the gas extraction system of described chambers, wherein, described common venting system constitutes changeable common venting system and the non-common venting system of removing the evil of removing the evil, remove the evil common venting system by the parts of removing the evil to removing the evil from the exhaust of the gas extraction system of described chambers and discharging, the non-common venting system of removing the evil ejects exhaust from the gas extraction system of described chambers without the parts of removing the evil

The kind that also has the processing of carrying out according to described chambers is carried out the control assembly of the switching controls of described remove the evil common venting system and the described non-common venting system of removing the evil,

When the described a plurality of process chambers that are connected in described common venting system are parallel when handling, the exclusive control that described control assembly is stipulated, make with described common venting system switch to handle behind the described non-common venting system of removing the evil constituted first handle and with described common venting system switch to handle that second the process chamber of a processing in described a plurality of process chambers among handling that constituted handle behind the described common venting system of removing the evil during, other process chamber in described a plurality of process chambers does not carry out another processing.

2. substrate board treatment according to claim 1 is characterized in that:

Possess right to use subscription information memory unit, store the usufructuary subscription information of the common venting system in the described chambers,

Exclusive process chamber that is controlled in the described a plurality of process chambers that are connected on the described common venting system in the described chambers carries out under described first one the situation of handling in handling with described second, judge that whether a processing carry out in other process chamber in the described a plurality of process chambers on being connected in described common venting system

Do not carry out carrying out another processing under the situation of a described processing being judged as other process chamber,

Carry out under the situation of a described processing being judged as other process chamber, with another handle as etc. armed state, and the right to use subscription information of described common venting system is stored in the described right to use subscription information memory unit, afterwards, carry out the reservation processing that the subscription information according to right to use subscription information memory unit carries out another processing.

3. substrate board treatment according to claim 2 is characterized in that:

After a processing in described other process chamber finished, described reservation processing was carried out described another processing of the process chamber of described processing wait state.

4. substrate board treatment according to claim 3 is characterized in that:

Under situation about a plurality of process chambers being stored in the right to use subscription information of described common venting system in the described right to use subscription information memory unit, described reservation processing is carried out described another processing according to the storage order of described subscription information.

5. according to each described substrate board treatment in the claim 1～4, it is characterized in that:

Described first to handle be not need that exhaust is removed the evil and comprise the processing of following the pump-down process of described process chamber more than authorized pressure at least, and described second to handle be to comprise at least to follow the processing that needs the pump-down process that exhaust removes the evil.

6. substrate board treatment according to claim 5 is characterized in that:

Described first processing is the thick extraction pump-down process of described process chamber or the processing that comprises described thick extraction pump-down process, and described second processing is the processing of following the processing gas of the exhaust of described process chamber to import processing or comprising described processing gas importing processing.

7. substrate board treatment according to claim 6 is characterized in that:

Described first processing is to comprise the automatic inspection of the described process chamber of the thick extraction pump-down process of described process chamber to handle or safeguard processing.

8. according to claim 6 or 7 described substrate board treatments, it is characterized in that:

Described second processing is to comprise the processing gas of described process chamber to import the automatic inspection processing of the described process chamber of handling or safeguard processing.

9. substrate board treatment according to claim 5 is characterized in that:

It all is the thick extraction pump-down process of described process chamber or the processing that comprises described thick extraction pump-down process that described first processing and described second is handled.

10. substrate board treatment is characterized in that possessing:

Import gas and carry out a plurality of process chambers of predetermined process;

Be separately positioned on the gas extraction system in the described chambers;

The common venting system that connects the gas extraction system of plural at least process chamber in the gas extraction system of described chambers, wherein, described common venting system constitutes changeable common venting system and the non-common venting system of removing the evil of removing the evil, remove the evil common venting system by the parts of removing the evil to removing the evil from the exhaust of the gas extraction system of described chambers and discharging, the non-common venting system of removing the evil ejects exhaust from the gas extraction system of described chambers without the parts of removing the evil

The kind that also has the processing of carrying out according to described chambers is carried out the control assembly of the switching controls of described remove the evil common venting system and the described non-common venting system of removing the evil,

Constitute the gas delivery system that in described process chamber, imports gas by importing the processing gas delivery system of handling gas and the inert gas import system that imports inert gas,

Described inert gas import system possesses first import system that imports described inert gas with the regulation flow; With to import second import system of described inert gas than the big flow of described first import system.

11. substrate board treatment according to claim 10 is characterized in that:

When the particle that carries out described process chamber reduces processing, import described inert gas by described second import system at least.

12. substrate board treatment according to claim 11 is characterized in that:

When the particle that carries out described process chamber reduces processing, only import described inert gas at the appointed time by described second import system at first at least, afterwards, only supply with described inert gas by described first import system.

13. the control method of a substrate board treatment possesses:

Import gas and carry out a plurality of process chambers of predetermined process;

Be separately positioned on the gas extraction system in the described chambers; With

The common venting system that connects the gas extraction system of plural at least process chamber in the gas extraction system of described chambers, described common venting system constitutes changeable common venting system and the non-common venting system of removing the evil of removing the evil, remove the evil common venting system by the parts of removing the evil to removing the evil from the exhaust of the gas extraction system of described chambers and discharging, the non-common venting system of removing the evil ejects exhaust from the gas extraction system of described chambers without the parts of removing the evil

The kind of the processing of carrying out according to described chambers is carried out the switching controls of described remove the evil common venting system and the described non-common venting system of removing the evil,

When the described a plurality of process chambers that are connected in described common venting system are parallel when handling, the exclusive control that described control assembly is stipulated, make with described common venting system switch to handle behind the described non-common venting system of removing the evil constituted first handle and with described common venting system switch to handle that second the process chamber of a processing in described a plurality of process chambers among handling that constituted handle behind the described common venting system of removing the evil during, other process chamber in described a plurality of process chambers does not carry out another processing.

14. the control method of substrate board treatment according to claim 13, described substrate board treatment have the right to use subscription information memory unit of the usufructuary subscription information of the common venting system in the described chambers of storage, it is characterized in that having:

Exclusive in the described chambers is controlled at by a process chamber in the described a plurality of process chambers that are connected on the described common venting system and undertaken under described first one the situation of handling in handling with described second, judges the operation whether a processing is carried out in other process chamber in the described a plurality of process chambers on being connected in described common venting system; With

Do not carry out carrying out another processing under the situation of a described processing being judged as other process chamber, carry out under the situation of a described processing being judged as other process chamber, with another handle as etc. armed state, and the right to use subscription information of described common venting system is stored in the described right to use subscription information memory unit, afterwards, carry out carrying out the operation of the reservation processing of another processing according to the subscription information of right to use subscription information memory unit.

15. the control method of substrate board treatment according to claim 14 is characterized in that:

After a processing in described other process chamber finished, described reservation processing was carried out described another processing of the process chamber of described processing wait state.

16. the control method of substrate board treatment according to claim 15 is characterized in that:

Under situation about a plurality of process chambers being stored in the right to use subscription information of described common venting system in the described right to use subscription information memory unit, described reservation processing is carried out described another processing according to the storage order of described subscription information.

17. the control method according to each described substrate board treatment in the claim 13～16 is characterized in that:

Described first to handle be not need that exhaust is removed the evil and comprise the processing of following the pump-down process of described process chamber more than authorized pressure at least, and described second to handle be to comprise at least to follow the processing that needs the pump-down process that exhaust removes the evil.

18. the control method of substrate board treatment according to claim 17 is characterized in that:

Described first processing is the thick extraction pump-down process of described process chamber or the processing that comprises described thick extraction pump-down process, and described second processing is the processing of following the processing gas of the exhaust of described process chamber to import processing or comprising described processing gas importing processing.

19. the control method of substrate board treatment according to claim 15 is characterized in that:

Described first processing is to comprise the automatic inspection of the described process chamber of the thick extraction pump-down process of described process chamber to handle or safeguard processing.

20. the control method according to claim 18 or 19 described substrate board treatments is characterized in that:

Described second processing is to comprise the processing gas of described process chamber to import the automatic inspection processing of the described process chamber of handling or safeguard processing.

21. the control method of substrate board treatment according to claim 17 is characterized in that:

It all is the thick extraction pump-down process of described process chamber or the processing that comprises described thick extraction pump-down process that described first processing and described second is handled.

22. the control method of a substrate board treatment possesses:

Import gas and carry out a plurality of process chambers of predetermined process;

Be separately positioned on the gas extraction system in the described chambers; With

The common venting system that connects the gas extraction system of plural at least process chamber in the gas extraction system of described chambers, described common venting system constitutes changeable common venting system and the non-common venting system of removing the evil of removing the evil, remove the evil common venting system by the parts of removing the evil to removing the evil from the exhaust of the gas extraction system of described chambers and discharging, the non-common venting system of removing the evil ejects exhaust from the gas extraction system of described chambers without the parts of removing the evil

The kind of the processing of carrying out according to described chambers is carried out the switching controls of described remove the evil common venting system and the described non-common venting system of removing the evil,

Constitute the gas delivery system that in described process chamber, imports gas by importing the processing gas delivery system of handling gas and the inert gas import system that imports inert gas,

Described inert gas import system possesses first import system that imports described inert gas with the regulation flow; With to import second import system of described inert gas than the big flow of described first import system.

23. the control method of substrate board treatment according to claim 22 is characterized in that:

When the particle that carries out described process chamber reduces processing, import described inert gas by described second import system at least.

24. the control method of substrate board treatment according to claim 23 is characterized in that:

When the particle that carries out described process chamber reduces processing, only import described inert gas at the appointed time by described second import system at first at least, afterwards, only supply with described inert gas by described first import system.

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