CN100396812C - 连接磁性靶和背衬板的方法以及磁性靶 - Google Patents
连接磁性靶和背衬板的方法以及磁性靶 Download PDFInfo
- Publication number
- CN100396812C CN100396812C CNB028257480A CN02825748A CN100396812C CN 100396812 C CN100396812 C CN 100396812C CN B028257480 A CNB028257480 A CN B028257480A CN 02825748 A CN02825748 A CN 02825748A CN 100396812 C CN100396812 C CN 100396812C
- Authority
- CN
- China
- Prior art keywords
- target
- magnetic substance
- backing plate
- substance target
- magnetic flux
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
θ(度数) | 中心 | 1/3R | 2/3R |
0 | 3.21 | ||
0 | 3.20 | ||
45 | 3.20 | ||
90 | 3.20 | ||
135 | 3.20 | ||
180 | 3.22 | ||
225 | 3.21 | ||
270 | 3.21 | ||
315 | 3.21 | ||
0 | 3.22 | ||
22.5 | 3.21 | ||
45 | 3.21 | ||
67.5 | 3.21 | ||
90 | 3.20 | ||
112.5 | 3.21 | ||
135 | 3.23 | ||
157.5 | 3.22 | ||
180 | 3.23 | ||
202.5 | 3.24 | ||
225 | 3.22 | ||
247.5 | 3.22 | ||
270 | 3.23 | ||
292.5 | 3.23 | ||
315 | 3.22 | ||
337.5 | 3.23 |
θ(度数) | 中心 | 1/3R | 2/3R |
0 | 94% | ||
0 | 97% | ||
45 | 98% | ||
90 | 99% | ||
135 | 100% | ||
180 | 96% | ||
225 | 93% | ||
270 | 95% | ||
315 | 94% | ||
0 | 92% | ||
22.5 | 96% | ||
45 | 97% | ||
67.5 | 96% | ||
90 | 100% | ||
112.5 | 100% | ||
135 | 93% | ||
157.5 | 92% | ||
180 | 93% | ||
202.5 | 91% | ||
225 | 94% | ||
247.5 | 95% | ||
270 | 93% | ||
292.5 | 92% | ||
315 | 93% | ||
337.5 | 91% |
θ(度数) | 中心 | 1/3R | 2/3R |
0 | 2.95 | ||
0 | 3.07 | ||
45 | 3.10 | ||
90 | 3.05 | ||
135 | 3.11 | ||
180 | 3.12 | ||
225 | 3.08 | ||
270 | 3.10 | ||
315 | 3.12 | ||
0 | 3.25 | ||
22.5 | 3.22 | ||
45 | 3.21 | ||
67.5 | 3.21 | ||
90 | 3.20 | ||
112.5 | 3.21 | ||
135 | 3.31 | ||
157.5 | 3.29 | ||
180 | 3.30 | ||
202.5 | 3.29 | ||
225 | 3.27 | ||
247.5 | 3.25 | ||
270 | 3.23 | ||
292.5 | 3.23 | ||
315 | 3.22 | ||
337.5 | 3.19 |
θ(度数) | 中心 | 1/3R | 2/3R |
0 | 100% | ||
0 | 91% | ||
45 | 89% | ||
90 | 92% | ||
135 | 89% | ||
180 | 86% | ||
225 | 88% | ||
270 | 90% | ||
315 | 88% | ||
0 | 69% | ||
22.5 | 75% | ||
45 | 73% | ||
67.5 | 72% | ||
90 | 76% | ||
112.5 | 77% | ||
135 | 64% | ||
157.5 | 67% | ||
180 | 66% | ||
202.5 | 70% | ||
225 | 73% | ||
247.5 | 75% | ||
270 | 77% | ||
292.5 | 78% | ||
315 | 80% | ||
337.5 | 83% |
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001385666 | 2001-12-19 | ||
JP385666/2001 | 2001-12-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1606633A CN1606633A (zh) | 2005-04-13 |
CN100396812C true CN100396812C (zh) | 2008-06-25 |
Family
ID=19187861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028257480A Expired - Lifetime CN100396812C (zh) | 2001-12-19 | 2002-11-14 | 连接磁性靶和背衬板的方法以及磁性靶 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7347353B2 (zh) |
EP (1) | EP1466999B1 (zh) |
JP (1) | JP4204978B2 (zh) |
KR (1) | KR100600973B1 (zh) |
CN (1) | CN100396812C (zh) |
TW (1) | TW555876B (zh) |
WO (1) | WO2003052161A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102230158B (zh) * | 2004-11-17 | 2014-04-30 | Jx日矿日石金属株式会社 | 溅射靶、溅射靶-背衬板组装体以及成膜装置 |
EP2039797B1 (en) * | 2006-06-29 | 2012-08-29 | JX Nippon Mining & Metals Corporation | Sputtering target/backing plate conjunction element |
KR101086661B1 (ko) | 2007-02-09 | 2011-11-24 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고융점 금속 합금, 고융점 금속 규화물, 고융점 금속 탄화물, 고융점 금속 질화물 혹은 고융점 금속 붕소화물의 난소결체로 이루어지는 타겟 및 그 제조 방법 그리고 동스퍼터링 타겟-백킹 플레이트 조립체 및 그 제조 방법 |
JP5676429B2 (ja) * | 2008-04-21 | 2015-02-25 | ハネウェル・インターナショナル・インコーポレーテッド | Dcマグネトロンスパッタリングシステムの設計および使用 |
WO2010021769A1 (en) * | 2008-08-18 | 2010-02-25 | Carrier Corporation | Method for removing brazing residues from aluminum articles |
WO2011062002A1 (ja) | 2009-11-20 | 2011-05-26 | Jx日鉱日石金属株式会社 | スパッタリングターゲット-バッキングプレート接合体及びその製造方法 |
EP2518179B1 (en) | 2009-12-24 | 2016-11-16 | JX Nippon Mining & Metals Corporation | Gadolinium sputtering target and method for manufacturing the target |
SG189977A1 (en) | 2010-10-27 | 2013-06-28 | Jx Nippon Mining & Metals Corp | Sputtering target backing plate assembly and method for producing same |
CN103827349B (zh) | 2011-09-30 | 2016-08-24 | 吉坤日矿日石金属株式会社 | 溅射靶及其制造方法 |
JP5958183B2 (ja) * | 2012-08-27 | 2016-07-27 | 三菱マテリアル株式会社 | Ni又はNi合金スパッタリングターゲット及びその製造方法 |
KR20150130553A (ko) | 2013-11-06 | 2015-11-23 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링 타깃/배킹 플레이트 조립체 |
KR101923292B1 (ko) | 2014-07-31 | 2018-11-28 | 제이엑스금속주식회사 | 방식성의 금속과 Mo 또는 Mo 합금을 확산 접합한 백킹 플레이트, 및 그 백킹 플레이트를 구비한 스퍼터링 타깃-백킹 플레이트 조립체 |
JP6384523B2 (ja) * | 2016-06-22 | 2018-09-05 | 三菱マテリアル株式会社 | Ni又はNi合金スパッタリングターゲット |
JP6546953B2 (ja) | 2017-03-31 | 2019-07-17 | Jx金属株式会社 | スパッタリングターゲット−バッキングプレート接合体及びその製造方法 |
US11244815B2 (en) | 2017-04-20 | 2022-02-08 | Honeywell International Inc. | Profiled sputtering target and method of making the same |
CN111118459A (zh) * | 2019-12-30 | 2020-05-08 | 有研亿金新材料有限公司 | 一种高性能铁磁性靶材的制备方法 |
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-
2002
- 2002-11-14 JP JP2003553027A patent/JP4204978B2/ja not_active Expired - Lifetime
- 2002-11-14 US US10/498,146 patent/US7347353B2/en active Active
- 2002-11-14 EP EP02781766.7A patent/EP1466999B1/en not_active Expired - Lifetime
- 2002-11-14 KR KR1020047008835A patent/KR100600973B1/ko active IP Right Grant
- 2002-11-14 WO PCT/JP2002/011863 patent/WO2003052161A1/ja active Application Filing
- 2002-11-14 CN CNB028257480A patent/CN100396812C/zh not_active Expired - Lifetime
- 2002-11-19 TW TW091133695A patent/TW555876B/zh not_active IP Right Cessation
-
2008
- 2008-01-31 US US12/023,588 patent/US9653270B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4831708A (en) * | 1985-04-05 | 1989-05-23 | Nippon Steel Corporation | Method for producing a clad plate by hot rolling |
US5693203A (en) * | 1992-09-29 | 1997-12-02 | Japan Energy Corporation | Sputtering target assembly having solid-phase bonded interface |
JPH11200028A (ja) * | 1998-01-12 | 1999-07-27 | Mitsui Mining & Smelting Co Ltd | スパッタリングターゲットおよびその製造方法 |
JP2001214265A (ja) * | 2000-01-28 | 2001-08-07 | Kojundo Chem Lab Co Ltd | 磁気異方性強磁性体マグネトロンスパッタリングターゲットとその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090008245A1 (en) | 2009-01-08 |
TW200408721A (en) | 2004-06-01 |
WO2003052161A1 (fr) | 2003-06-26 |
JP4204978B2 (ja) | 2009-01-07 |
US7347353B2 (en) | 2008-03-25 |
EP1466999A1 (en) | 2004-10-13 |
EP1466999B1 (en) | 2014-10-08 |
TW555876B (en) | 2003-10-01 |
EP1466999A4 (en) | 2007-05-16 |
US20040265616A1 (en) | 2004-12-30 |
US9653270B2 (en) | 2017-05-16 |
KR20040066155A (ko) | 2004-07-23 |
CN1606633A (zh) | 2005-04-13 |
JPWO2003052161A1 (ja) | 2005-04-28 |
KR100600973B1 (ko) | 2006-07-13 |
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