CN100356347C - Safety writing method for flash memory - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000005299 abrasion Methods 0.000 abstract description 6
- 238000003860 storage Methods 0.000 description 12
- 230000014759 maintenance of location Effects 0.000 description 8
- 238000011067 equilibration Methods 0.000 description 5
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Abstract
The present invention relates to a method of safe reading and writing a chip memory, particularly to a safety writing method of a flash memory. Each minimum erasing writing unit can be used as a logic block; each logic block comprises one or more than one logic page; writing data and contents in a target logic block can be written in a backup logic block by numbering each logic block; thereby, the safety writing of data can be realized by reversing the logic number of the backup logic block and the block number of the target logic block, and the action of preferable power failure protection can be achieved. Simultaneously, the backup block is random, the excess erasing writing of any erasing writing block can be avoided, and the backup block can reach to the maximum erasing writing time preceding other logic blocks. Thereby, the present invention achieves abrasion balance and enhances the service life of the flash memory, and the system performance can be enhanced. In addition, compared with the prior art, the whole erasing writing blocks do not need to be erased frequently, and the consumption of memory can be largely reduced.
Description
Technical field
The present invention relates to the method for the safe read-write of chip memory, is a kind of safety writing method of flash memory specifically.
Technical background
In the last few years, flash memory (Flash Memory) storage medium was developed rapidly in embedded system and widespread use.Flash memory is a kind of storer of based semiconductor, still can keep internal information after having system's power down, and online functional characteristics such as erasable, is a kind of novel storer that substitutes original EEPROM storage medium.
At first introduce characteristic and the restriction of flash memory (Flash Memory), the characteristic of flash memory described here and restriction all are from the angle of the file system on upper strata, and can not relate to concrete physical characteristics:
A) the minimum addressing unit of flash memory is byte (byte), rather than the sector on the disk (sector).This means that we can be from any skew (offset) read data of a flash memory, but do not show that operation also is that unit carries out with the byte to flash memory write.
B) (by erasable mistake, but also do not have write operation to take place) when a flash memory is in clean state, each (bit) on this piece flash all is logical one.
C) each on the flash memory (bit) can be set to logical zero by write operation.Logical zero is set to logical one and but can not step-by-step (bit) operates, a general minimum erase units is called erasable block, and erasable operation can only be carried out for unit by erasable block (erase block).The size of erasable block does not wait from 4K to 128K.From the upper strata, the erasable function of finishing is exactly interior each of erasable block all to be reseted put (reset) one-tenth logical one.
D) be limited the serviceable life of flash memory.Specifically, be that maximum erasable number of times by erasable block decides the serviceable life of flash memory.Surpassed maximum erasable number of times, this erasable block has just become bad piece (bad block).Therefore for fear of certain erasable block by excessively erasable, to such an extent as to it reaches maximum erasable number of times prior to other erasable block, we should be evenly distributed on each erasable block erasable operation under the little prerequisite that influences performance of trying one's best.This process is called abrasion equilibration (wear leveling).
E) flash memory generally has a maximum writing unit, and we are accustomed to maximum writing unit is called page or leaf usually, and a general erasable block comprises one or more page or leaf.
In embedded system development,, require that the write operation of flash memory is done anti-power down protection and handle for improving reliability and security.Anti-power down protection is meant that before a write operation is finished if the unexpected power down of system, after re-powering, system can return to the state before the write operation.Yet because some characteristics of flash memory wiping/writing aspect cause its anti-power down process at flash memory difficult comparatively speaking a lot.
Because the above-mentioned characteristic of flash memory, when operating in file system on the flash memory at present and will rewrite the sector of a block device, normally the data of this place, sector erasable block are read in the internal memory, be placed in the buffer memory (buffer), then content corresponding with this sector in the buffer memory is replaced with new content, again this erasable block is carried out erasable operation, the data in will cushioning at last write back this erasable block.The shortcoming of this implementation is clearly: efficient is low, will rewrite data on the whole erasable block to the renewal of a sector, also causes the very big waste of memory headroom; Abrasion equilibration is not provided, and those data place erasable blocks by frequent updating will at first become bad piece; Very dangerous, be easy to cause losing of data.If superincumbent operation between last two steps unexpected power down (power loss) has taken place, the data in the so whole erasable block have just all been lost.This is unacceptable in the unexpected recurrent embedded system of power down.
Summary of the invention
The present invention has overcome above-mentioned shortcoming, the method at the safe read-write of flash memory that a kind of safety, abrasion equilibration is provided and has saved internal memory.
The present invention solves the technical scheme that its technical matters takes: a kind of safety writing method of flash memory, with each minimum erasable unit as a logical block, comprise one or more logical page (LPAGE) in each logical block, and to each logical block number, described logical block number (LBN) is stored in the logical block of place with fixing figure place, comprise the backup block that is used for data relay of a reservation in the described logical block, writing of data may further comprise the steps:
1), obtains the logical block number (LBN) of corresponding target block and the page number of the interior corresponding page or leaf of described logical block according to the logical block that will write the destination address place of content;
2) content that will write set by step 1) in the page number that obtains write in the corresponding page or leaf in the described backup block;
3) other each pages except that described corresponding page or leaf in the described object block are write in other corresponding in the described backup block each pages;
4) logical block number (LBN) in the backup block is replaced by the logical block number (LBN) of object block in the described step 1);
5) full content when each significance bit of described backup block number all is " 1 ", erase step 1) in the target logic piece, the target logic piece after described the wiping becomes new backup block,
When each significance bit of described backup block number is not " 1 " entirely, erase step 1) full content in the target logic piece, and logical block number (LBN) is rewritten as backup block number, as new backup block.
Described step 2), 3) order can be put upside down.
Described logical block number (LBN) can be kept in first byte of place logical block or last byte.
If between step 4) and step 5), power down takes place, after then powering on, can carry out following steps:
Choose and keep two any logical blocks that has in the same logical block number, another one is as the backup logical block, and wipes the content in the described backup logical block.
A kind of safety writing method of flash memory, with each minimum erasable unit as a logical block, comprise one or more logical page (LPAGE) in each logical block, and to each logical block number, described logical block number (LBN) is stored in the logical block of place with fixing figure place, the backup block that is used for data relay that comprises a reservation in the described logical block, when each significance bit of described logical block number (LBN) was " 0 " entirely, writing of data may further comprise the steps:
1), obtains the logical block number (LBN) of corresponding target block and the page number of the interior corresponding page or leaf of described logical block according to the logical block that will write the destination address place of content;
2) find and wipe full content in the described backup block;
3) content that will write set by step 1) in the page number that obtains write in the corresponding page or leaf in the described backup block;
4) other each pages except that described corresponding page or leaf in the described object block are write in other corresponding in the described backup block each pages;
5) logical block number (LBN) in the backup block is replaced by the logical block number (LBN) of object block in the described step 1);
6) logical block number (LBN) in the object block of step 1) Central Plains is rewritten as the logical block piece number of backup block;
Described step 3), 4) order can be put upside down.
Described logical block number (LBN) can be kept in first byte of place logical block or last byte.
If between step 5) and step 6), power down takes place, after then powering on, can carry out following steps:
Choose and keep two any logical blocks that has in the same logical block number, another one is as the backup logical block, and logical block number is rewritten as the logical block number (LBN) of former backup block in the described backup logical block that will choose.
Can carry out to the flash memory initialization or formative the time in system the numbering of each logical block.
The present invention with each minimum erasable unit as a logical block; comprise one or more logical page (LPAGE)s in each logical block; by also giving each logical block number; content in data that will write and the target logic piece all writes the backup logical block; and will back up the logic number of logical block and the piece number inversion of target logic piece; thereby the safety that realizes data writes; and can reach the effect of good power down protection; described backup block is at random simultaneously; avoided certain erasable block by excessively erasable; to such an extent as to it reaches maximum erasable number of times prior to other logical block, thereby reaches abrasion equilibration, improve the serviceable life of flash memory; thereby raising system performance; owing to, do not need often erasable whole erasable block, reduced the use amount of internal memory significantly in addition than prior art.
Description of drawings
Fig. 1 is the original state of storer before rewriting in the embodiment of the invention 1;
Fig. 2 is the state of completing steps 2 background storages in the embodiment of the invention 1;
Fig. 3 is the state of completing steps 3 background storages in the embodiment of the invention 1;
Fig. 4 is the state of completing steps 4 background storages in the embodiment of the invention 1;
Fig. 5 is the state of completing steps 5 background storages in the embodiment of the invention 1.
Fig. 6 is the original state of storer before rewriting in the embodiment of the invention 2;
Fig. 7 is the state of completing steps 2 background storages in the embodiment of the invention 2;
Fig. 8 is the state of completing steps 3 background storages in the embodiment of the invention 2;
Fig. 9 is the state of completing steps 4 background storages in the embodiment of the invention 2;
Figure 10 is the state of completing steps 5 background storages in the embodiment of the invention 2.
Embodiment
According to specific embodiment content of the present invention is done detailed description below.
Since flash memory (Flash Memory) to write with the page or leaf be unit, wipe with the piece is unit, the flash memory of different types is had any different to the division of page or leaf and piece, we are with erasable block 64 bytes, it is example that each erasable block divides the memory block of four erasable blocks altogether of 8 pages or leaves, follow erasable block of the unique correspondence of each logical block, so each logical block also is 64 bytes, is divided into 8 pages or leaves.System all is based on described logical block to data write and handles, and all is to carry out according to logical address to the addressing of flash media.Simultaneously, also to keep a backup erasable block at least, be used for data relay.
Embodiment 1, in system to the flash memory initialization or formative the time, make corresponding logical block in the erasable unit of each physics in the flash memory, all number for each logical block, first byte that takies each logical block in the present embodiment is deposited logical block number (LBN), as shown in Figure 1, the active volume of each logical block just becomes 63 bytes in fact like this, and the size of whole memory block is 252 bytes.Here our logic number that defines four logical blocks respectively be 00,01,02,03,, wherein logic number is 00 the backup logical block of logical block for keeping, and for using or through the logical block after wiping, being used for the transfer of data.We are provided with the corresponding physical block 2 of 3, No. 00 logical blocks of the corresponding physical block of 1, No. 03 logical block of the corresponding physical block of 0, No. 02 logical block of the corresponding physical block of logical block No. 01 simultaneously, and logical address is addressed to logical block number (LBN) order from small to large and comes layout.The numbering of logical block decides according to concrete application, can adopt diverse ways.
For example will write string number 7 to logical address 0x31～0x38, concrete steps are as follows:
1, according to the target logic address that will write, obtain corresponding target logic piece number and page number, here be logical block 01 and wherein the 7th page, as shown in Figure 1;
2, find the backup logical block according to logical block number (LBN) 00, and wipe this backup logical block that finds, make they whole storage areas that comprise logical block number (LBN) be logical one, as shown in Figure 2;
3, in the logical block number (LBN) and page number in the backup block that calculates target logic piece number and page number correspondence in the content write step 1 that will rewrite, be about to string number 7 and write the 7th page of backup block, and will be corresponding to other page copies in the logical block 01 to backup in the logical block in the corresponding page or leaf, as shown in Figure 3;
4, with the logic number of backup block, the piece of the target logic piece that makes into to calculate in the step 1 number, the logic number FF that is about to backup block this moment changes 01 into, as shown in Figure 4;
5, the logical block number (LBN) of the logical block that calculates in the step 1 piece of former logical block 01 (be number) is rewritten as backup block piece number 00, as shown in Figure 5;
By above operation, we can find that logical block 01 has been rewritten as predetermined value safely, and only data have been rewritten to above the other physical block, and the physical block of itself then becomes new backup logical block (being logical block 00).Whenever power down takes place in the middle of this process can not cause losing of data, for example:
If a) power down occurs in before the step 3, to the logical block that will rewrite without any influence.
B) if power down occurs between step 3 and 4, because logical block number (LBN) just re-powers and can recover without any variation at this moment.
C) if power down occurs between step 4 and 5, at this moment, can there be the piece of two same blocks number, like this, another one is as backup block as logical block to re-power optional one of back, and the logical block number (LBN) 00 that then logical block number (LBN) is rewritten as backup block gets final product.
Embodiment 2, in system to the flash memory initialization or formative the time, make corresponding logical block in the erasable unit of each physics in the flash memory, all number for each logical block, first byte that takies each logical block in the present embodiment is deposited logical block number (LBN), as shown in Figure 6, the active volume of each logical block just becomes 63 bytes in fact like this, and the size of whole memory block is 252 bytes.Here our logic number that defines four logical blocks respectively be 01,02,03, FF, wherein logical block number (LBN) is the backup logical block of logical block for keeping of FF, and is used for the transfer of data.We are provided with the corresponding physical block 3 of 1, No. 03 logical block of the corresponding physical block of 0, No. 02 logical block of the corresponding physical block of logical block No. 01 simultaneously, the corresponding physical block 2 of FF logical block, and the numbering of logical block decides according to concrete application, can adopt diverse ways.
For example will write string number 7 to logical address 0x31～0x38, concrete steps are as follows:
1, according to the logical address that will write, obtain corresponding target logic piece number and page number, here be logical block 01 and wherein the 7th page, as shown in Figure 6;
2, find the backup logical block according to logical block number (LBN) FF, this backup logical block should be at this moment do not use or wipe after use, as shown in Figure 7;
3, in the logical block number (LBN) and page number in the backup block that calculates target logic piece number and page number correspondence in the content write step 1 that will rewrite, be about to string number 7 and write the 7th page of backup block FF, and will be corresponding to other page copies in the logical block 01 to backup in the logical block in the corresponding page or leaf, finish in this step background storage data as shown in Figure 8;
4, with the logic number of backup block, the piece of the target logic piece that makes into to calculate in the step 1 number, the logic number that is about to backup block changes 01 into, as shown in Figure 9;
5, the target logic piece that calculates in the erase step 1 is about to whole logical block and all is rewritten as logical one, and then logical block number (LBN) is FF, makes it become new backup block, as shown in figure 10;
By above operation, we can find that logical block 01 has been rewritten as predetermined value safely, only data have been rewritten to above the other physical block, and the physical block of itself has been in clean state, promptly be wiped free of, but still do not have write operation to take place, become new backup logic piece.Whenever power down takes place in the middle of this process can not cause losing of data, for example:
If a) power down occurs in before the step 3, to the logical block that will rewrite without any influence.
B) if power down occurs between step 3 and 4, because logical block number (LBN) just re-powers and can recover without any variation at this moment.
C) if power down occurs between step 4 and 5, at this moment, can there be the piece of two same blocks number, like this, another one is as backup block as the target logic piece to re-power optional one of back, and the logical block of wiping then as backup block gets final product.
Through above-mentioned processing, just can guarantee the security of system data, thereby reach the purpose of safe read-write, and the change at random of backup block also guaranteed abrasion equilibration, can not cause it to become bad piece in advance because of frequent erasable some physical blocks.Owing to do not need too much erasable whole erasable block, reduced the use amount of internal memory significantly simultaneously.
More than the safety writing method of flash memory provided by the present invention is described in detail, used specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (8)
1. a kind of safety writing method of flash memory, it is characterized in that: with each minimum erasable unit as a logical block, comprise one or more logical page (LPAGE) in each logical block, and to each logical block number, described logical block number (LBN) is stored in the logical block of place with fixing figure place, comprise the backup block that is used for data relay of a reservation in the described logical block, writing of data may further comprise the steps:
1), obtains the logical block number (LBN) of corresponding target block and the page number of the interior corresponding page or leaf of described logical block according to the logical block that will write the destination address place of content;
2) content that will write set by step 1) in the page number that obtains write in the corresponding page or leaf in the described backup block;
3) other each pages except that described corresponding page or leaf in the described object block are write in other corresponding in the described backup block each pages;
4) logical block number (LBN) in the backup block is replaced by the logical block number (LBN) of object block in the described step 1);
5) full content when each significance bit of described backup block number all is " 1 ", erase step 1) in the target logic piece, the target logic piece after described the wiping becomes new backup block,
When each significance bit of described backup block number is not " 1 " entirely, erase step 1) full content in the target logic piece, and logical block number (LBN) is rewritten as backup block number, as new backup block.
Described step 2), 3) order can be put upside down.
2. the safe write method of flash memory according to claim 1 is characterized in that: described logical block number (LBN) is kept in first byte of place logical block or last byte.
3. the safe write method of flash memory according to claim 1 and 2 is characterized in that: if between step 4) and step 5) power down takes place, after then powering on, carry out following steps:
Choose and keep two any logical blocks that has in the same logical block number, another one is as the backup logical block, and wipes the content in the described backup logical block.
4. the safe write method of flash memory according to claim 1 and 2 is characterized in that: the numbering of each logical block is carried out to the flash memory initialization or formative the time in system.
5. a kind of safety writing method of flash memory, it is characterized in that: with each minimum erasable unit as a logical block, comprise one or more logical page (LPAGE) in each logical block, and to each logical block number, described logical block number (LBN) is stored in the logical block of place with fixing figure place, the backup block that is used for data relay that comprises a reservation in the described logical block, when each significance bit of described logical block number (LBN) was " 0 " entirely, writing of data may further comprise the steps:
1), obtains the logical block number (LBN) of corresponding target block and the page number of the interior corresponding page or leaf of described logical block according to the logical block that will write the destination address place of content;
2) find and wipe full content in the described backup block;
3) content that will write set by step 1) in the page number that obtains write in the corresponding page or leaf in the described backup block;
4) other each pages except that described corresponding page or leaf in the described object block are write in other corresponding in the described backup block each pages;
5) logical block number (LBN) in the backup block is replaced by the logical block number (LBN) of object block in the described step 1);
6) logical block number (LBN) in the object block of step 1) Central Plains is rewritten as the logical block piece number of backup block;
Described step 3), 4) order can be put upside down.
6. the safety writing method of flash memory according to claim 5 is characterized in that: described logical block number (LBN) is kept in first byte of place logical block or last byte.
7. according to the safety writing method of claim 5 or 6 described flash memories, it is characterized in that:, after then powering on, carry out following steps if between step 5) and step 6), power down takes place:
Choose and keep two any logical blocks that has in the same logical block number, another one is as the backup logical block, and logical block number is rewritten as the logical block number (LBN) of former backup block in the described backup logical block that will choose.
8. according to the safety writing method of claim 5 or 6 described flash memories, it is characterized in that: the numbering of each logical block is carried out to the flash memory initialization or formative the time in system.
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| CN101526921B (en) * | 2008-12-31 | 2014-07-30 | 飞天诚信科技股份有限公司 | Method and device for writing data |
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| CN101251826B (en) * | 2007-02-27 | 2010-09-01 | 深圳市同洲电子股份有限公司 | Flash memory, method and apparatus for data management of flash memory |
| CN100462944C (en) * | 2007-03-07 | 2009-02-18 | 北京飞天诚信科技有限公司 | Power-fail protection method based on two continuous logical blocks for non-volatile memory |
| TWI373772B (en) | 2007-10-04 | 2012-10-01 | Phison Electronics Corp | Wear leveling method and controller using the same |
| CN101441552B (en) * | 2007-11-19 | 2012-05-23 | 深圳市朗科科技股份有限公司 | Flash memory medium bad block processing method |
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| CN106933705A (en) * | 2015-12-31 | 2017-07-07 | 北京京存技术有限公司 | The method and apparatus of flash memory system and its quick backup LSB page |
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| CN1845082A (en) | 2006-10-11 |
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