CN106933705A - The method and apparatus of flash memory system and its quick backup LSB page - Google Patents
The method and apparatus of flash memory system and its quick backup LSB page Download PDFInfo
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- CN106933705A CN106933705A CN201511032637.XA CN201511032637A CN106933705A CN 106933705 A CN106933705 A CN 106933705A CN 201511032637 A CN201511032637 A CN 201511032637A CN 106933705 A CN106933705 A CN 106933705A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/14—Error detection or correction of the data by redundancy in operation
- G06F11/1402—Saving, restoring, recovering or retrying
- G06F11/1446—Point-in-time backing up or restoration of persistent data
- G06F11/1448—Management of the data involved in backup or backup restore
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/14—Error detection or correction of the data by redundancy in operation
- G06F11/1402—Saving, restoring, recovering or retrying
- G06F11/1446—Point-in-time backing up or restoration of persistent data
- G06F11/1456—Hardware arrangements for backup
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Abstract
A kind of method and apparatus that the embodiment of the invention provides flash memory system and its quick backup LSB page, method includes：Receive the user data of multiple field memory cell nand flash memory to be written；Multiple field memory cell nand flash memory is divided into first piece of region and second piece of region；User data is write into first piece of region, wherein, before during user data is write into first piece of region MSB pages, by the LSB page in user data backup in MSB pages of corresponding LSB page to second piece of region.The embodiment of the present invention can be realized during user data to multiple field memory cell nand flash memory such as MLC nand flash memories, TLC nand flash memories, QLC nand flash memories etc. is stored, user data in quick backup LSB page, and reclaim back up memory space, the pairing page power down crash issue of multiple field memory cell nand flash memory is solved simultaneously, improves systematic function.
Description
Technical field
The present invention relates to technical field of electronic equipment, more particularly to a kind of side of quick backup LSB page
The device and a kind of flash memory system of method, a kind of quick backup LSB page.
Background technology
For MLC (Multi-Level Cell, 2/memory cell) nand flash memory (one kind of flash memory,
Inside uses non-linear macroelement pattern), TLC (Trinary Level Cell, 3/memory cell) NAND
The multiple field storages such as flash memory, QLC (Quad Level Cell, 4/memory cell) nand flash memory are single
First nand flash memory, 1 basic memory cell can represent the corresponding data position in page two, i.e. LSB
(Least Significant Bit, least significant bit) page and MSB (Most Significant Bit, highest
Significance bit) corresponding data position in page, LSB page and it is related MSB page to match page.Wherein, to LSB
After page programming, when being programmed to related MSB pages, if power down, LSB page and MSB pages
May collapse simultaneously.Further, if the data on LSB page are file system metadata, if should
There is pairing page crash issue in LSB page, then file system and host computer system can also collapse.Therefore, if
The pairing page crash issue of multiple field memory cell nand flash memory cannot be solved, it is most likely that cause master
Machine system crash, causes catastrophic consequence.
In correlation technique, MSB pages in multiple field memory cell nand flash memory is compiled mostly
Cheng Shi, backs up related LSB page to solve the above problems.Reference picture 1, multiple field memory cell NAND
In flash memory, page 0 ', page 1 ', page 3 ' ... page 21 ' are LSB page, page 2 ', page 4 ', page 6 ' ...
Page 24 ' is MSB pages.Because page 0 ' and page 2 ' are pairing pages, it is generally the case that if compiled to page 2 '
Journey, then need the data of first backed-up pages 0 ' in other blocks.Similarly, if programmed to page 4 ', need
, in other blocks, the rest may be inferred for the data of first backed-up pages 1 '.
But, also there is following defect in above-mentioned correlation technique：The mode of the related LSB page of backup will cause
More pages are programmed, and waste memory space, reduce multiple field memory cell nand flash memory
Write performance.
The content of the invention
In view of the above problems, the embodiment of the invention provides a kind of quick backup LSB for overcoming above mentioned problem
Method, the device and a kind of flash memory system of a kind of quick backup LSB page of page.
In order to solve the above problems, the embodiment of the invention discloses a kind of method of quick backup LSB page,
Including：Receive the user data of multiple field memory cell nand flash memory to be written；The multiple field is deposited
Storage unit nand flash memory is divided into first piece of region and second piece of region；The user data is write into institute
State first piece of region, wherein, in the user data is write into first piece of region MSB pages it
Before, by user data backup in described MSB pages corresponding LSB page to second piece of region
LSB page.
Specifically, the method for quick backup LSB page also includes：The user data is set up with described
Mapping relations in two pieces of regions between correspondence memory space.
Specifically, the method for quick backup LSB page also includes：When the user data writes to be completed,
Discharge the block that the user data is backed up in second piece of region.
Specifically, the method for quick backup LSB page also includes：When the user data writes to be completed,
Discharge back up the user data in second piece of region write full block.
In order to solve the above problems, the embodiment of the invention also discloses a kind of dress of quick backup LSB page
Put, including：Data reception module, for receiving multiple field memory cell nand flash memory to be written
User data；The multiple field memory cell nand flash memory is divided into first piece of region and second piece of region；
Data write and backup module, for the user data to be write into first piece of region, wherein,
It is corresponding by described MSB pages before by user data write-in first piece of region MSB pages
LSB page in LSB page in user data backup to second piece of region.
Specifically, the device of quick backup LSB page also includes：Mapping relations set up module, for building
Vertical mapping relations between the user data and corresponding memory space in second piece of region.
Specifically, the device of quick backup LSB page also includes：First release module, for when described
When user data write-in is completed, the block of the user data is backed up in release second piece of region.
Specifically, the device of quick backup LSB page also includes：Second release module, for when described
When user data write-in is completed, having write for the user data is backed up in release second piece of region full
Block.
In order to solve the above problems, the embodiment of the invention also discloses a kind of flash memory system, including：Multilayer
The device of formula memory cell nand flash memory and described quick backup LSB page, wherein, the multilayer
Formula memory cell nand flash memory is divided into first piece of region and second piece of region.
The flash memory system of the embodiment of the present invention and its method and apparatus of quick backup LSB page include following
Advantage：After the user data for receiving multiple field memory cell nand flash memory to be written, by number of users
According to first piece of region in write-in multiple field memory cell nand flash memory, wherein, by user data
In first piece of region of write-in before MSB pages, by user data backup in MSB pages of corresponding LSB page
The LSB page in second piece of region into multiple field memory cell nand flash memory.So as to realize
In storage user data to multiple field memory cell nand flash memory such as MLC nand flash memories or base
The TLC nand flash memories of write-in user data or basis storage are single when each page is different in plinth memory cell
When each page is different in unit during QLC nand flash memories of write-in user data etc., quick backup
User data in LSB page, and effectively save back up memory space, while solving multiple field memory cell
The pairing page power down crash issue of nand flash memory, improves systematic function.
Brief description of the drawings
Fig. 1 is the pairing page schematic diagram of multiple field memory cell nand flash memory in correlation technique；
The step of Fig. 2 is a kind of embodiment of the method for quick backup LSB page of the invention flow chart；
Fig. 3 be a kind of quick backup LSB page of the invention embodiment of the method in user data first
The schematic diagram of storage condition in block region；
Fig. 4 be a kind of quick backup LSB page of the invention embodiment of the method in user data second
The schematic diagram of storage condition in block region；
The step of Fig. 5 is the embodiment of the method for another quick backup LSB page of the invention flow chart；
Fig. 6 is a kind of structured flowchart of the device embodiment of quick backup LSB page of the invention；
Fig. 7 is the structured flowchart of the device embodiment of another quick backup LSB page of the invention.
Specific embodiment
To enable the above objects, features and advantages of the present invention more obvious understandable, below in conjunction with the accompanying drawings
The present invention is further detailed explanation with specific embodiment.
Embodiment one
Reference picture 2, flows the step of show a kind of embodiment of the method for quick backup LSB page of the invention
Cheng Tu, specifically may include steps of：
S1, receives the user data of multiple field memory cell nand flash memory to be written；Multiple field is stored
Unit nand flash memory is divided into first piece of region and second piece of region.
Wherein, multiple field memory cell nand flash memory can be that MLC nand flash memories or basis are deposited
When each page is different in storage unit in the TLC nand flash memories of write-in user data or basic memory cell
QLC nand flash memories of write-in user data etc. when each page is different.It should be noted that first piece of area
In domain, each page can be operated in each unit.In second piece of region, only LSB page in each unit
Can be operated.I.e. second piece region and first piece of region be LSB page whether can by different in operation,
It is different rather than physical attribute.
S2, first piece of region is write by user data, wherein, user data is being write into first piece of region
Before middle MSB pages, by user data backup in MSB pages of corresponding LSB page to second piece of region
LSB page.
Specifically, in second piece of region only LSB page can by operation can for set second piece of region in only
LSB page can be operated, and can also be at backup user data to second piece of region, only by user data
Back up to the LSB page in second piece of region.
It should be noted that user data in MSB pages of corresponding LSB page is only backed up in step S2
LSB page into second piece of region, by user data in MSB pages of corresponding LSB page in correlation technique
Back up to other blocks LSB page or MSB pages.And user data is write to LSB page relatively to MSB pages
The speed for writing user data is fast, therefore, the embodiment of the present invention is corresponding by MSB pages compared with correlation technique
LSB page in user data backup to other blocks mode, system backup write performance obtained greatly
Improve.Even if the power down during during user data is write into first piece of region MSB pages simultaneously, the
User data is still present in LSB page in two pieces of regions, it is to avoid the pairing of MLC nand flash memories
Page power down crash issue.
In one embodiment of the invention, in step S 1 receive user data for A, B, C, D,
E、F、G、H、I、J、K、L、M、N、O、P.Assuming that multiple field memory cell NAND dodges
MLC nand flash memories are saved as, every page in MLC nand flash memories can preserve 4 data, then
After user data is write first piece of region by step S2, user data stores feelings in first piece of region
Condition can be as shown in Figure 3.Wherein, in Fig. 3, user data A, B, C, D are stored in first piece of area
In page 1 in domain, user data E, F, G, H are stored in the page 4 in first piece of region, user
In the page 3 of data I, J, K, L storage in first piece of region, user data M, N, O, P are deposited
In page 6 of the storage in first piece of region.It should be noted that user data is stored in first piece of region
Situation includes but are not limited to the storage condition shown in Fig. 3, and such as user data is deposited in first piece of region
Storage is in different blocks, or user data storage same in first piece of region, but storage is non-conterminous
Page in.
In step S2 by user data backup in MSB pages of corresponding LSB page in first piece of region to
After LSB page in two pieces of regions, storage condition can be such as Fig. 4 institutes in second piece of region for user data
Show.Wherein, in page 1 of user data A, B, C, D storages in second piece of region, user data
E, F, G, H are stored in the page 3 in second piece of region, and user data I, J, K, L storage exist
In page 5 in second piece of region, user data M, N, O, P store the page 7 in second piece of region
In.It should be noted that user data storage condition in second piece of region includes but are not limited to Fig. 4
Shown storage condition, such as user data are stored in different blocks in second piece of region, or user
Data storage same in first piece of region, but storage is in non-conterminous LSB page.
According to embodiments of the present invention one, receiving the use of multiple field memory cell nand flash memory to be written
After user data, user data is write into first piece of region in multiple field memory cell nand flash memory,
Wherein, before during user data is write into first piece of region MSB pages, by MSB pages of corresponding LSB
The LSB in second piece of region in page in user data backup to multiple field memory cell nand flash memory
Page.So as to realize in storage user data to multiple field memory cell nand flash memory such as MLC
The TLC NAND of write-in user data dodge when each page is different in nand flash memory or basic memory cell
Deposit or basic memory cell in each page it is different when write-in user data QLC nand flash memories etc. mistake
Cheng Zhong, user data in quick backup LSB page, while solving multiple field memory cell NAND sudden strains of a muscle
The pairing page power down crash issue deposited, improves system backup write performance.
Embodiment two
Reference picture 5, the step of show the embodiment of the method for another quick backup LSB page of the invention
Flow chart, specifically may include steps of：
S51, receives the user data of multiple field memory cell nand flash memory to be written；Multiple field is stored
Unit nand flash memory is divided into first piece of region and second piece of region.
S52, first piece of region is write by user data, wherein, user data is being write into first piece of area
In domain before MSB pages, by user data backup in MSB pages of corresponding LSB page to second piece of region
In LSB page.
S53, the mapping relations set up between user data and corresponding memory space in second piece of region.
For example, referring to Fig. 4, user data A, B, C, D are stored in the page 1 in second piece of region,
User data E, F, G, H are stored in page 3 in second piece of region, user data I, J, K,
L is stored in the page 5 in second piece of region, and user data M, N, O, P are stored in second piece of region
In page 7 in.Have then after step S53, between user data A, B, C, D and page 1 and reflect
Penetrate relation, between user data E, F, G, H and page 3 have mapping relations, user data I, J,
There are mapping relations between K, L and page 5, have between user data M, N, O, P and page 7 and reflect
Penetrate relation.Step S53 can read, wipe the user data in second piece of region or enter in order to correct
Capable other operations.
S54, when user data write complete when, release second piece of region in backup user data block or
Backup user data has write full block in second piece of region of release.
Second piece of memory space in region can be reclaimed by step S54, be that next MSB pages of backup is right
User data is prepared in the LSB page answered, and improves systematic function.Wherein, second piece of region is reclaimed
Back up memory space can include but is not limited to the mode in step S54, for example, can also be release second
Block region.
According to embodiments of the present invention two, receiving the use of multiple field memory cell nand flash memory to be written
After user data, user data is write into first piece of region in multiple field memory cell nand flash memory,
Wherein, before during user data is write into first piece of region MSB pages, by MSB pages of corresponding LSB
The LSB in second piece of region in page in user data backup to multiple field memory cell nand flash memory
Page, and then the mapping relations set up between user data and corresponding memory space in second piece of region, finally
When user data writes to be completed, second piece of the block of backup user data or release in second piece of region of release
Backup user data has write full block etc. in region.So as to realize in storage user data to multiple field
When each page is different in memory cell nand flash memory such as MLC nand flash memories or basic memory cell
User is write when each page is different in the TLC nand flash memories of write-in user data or basic memory cell
During QLC nand flash memories of data etc., user data in quick backup LSB page, and reclaim
Back up memory space, while solving the pairing page power down collapse of multiple field memory cell nand flash memory
Problem, improves systematic function.
It should be noted that for embodiment of the method, in order to be briefly described, therefore it is all expressed as one it is
The combination of actions of row, but those skilled in the art should know, and the embodiment of the present invention is not by described
Sequence of movement limitation because according to the embodiment of the present invention, some steps can using other orders or
Person is carried out simultaneously.Secondly, those skilled in the art should also know, embodiment described in this description
Preferred embodiment is belonged to, necessary to the involved action not necessarily embodiment of the present invention.
Embodiment three
Reference picture 6, shows a kind of structural frames of the device embodiment of quick backup LSB page of the invention
Figure, can specifically include such as lower module：
Data reception module 1, the number of users for receiving multiple field memory cell nand flash memory to be written
According to；Multiple field memory cell nand flash memory is divided into first piece of region and second piece of region.
Wherein, multiple field memory cell nand flash memory can be that MLC nand flash memories or basis are deposited
When each page is different in storage unit in the TLC nand flash memories of write-in user data or basic memory cell
QLC nand flash memories of write-in user data etc. when each page is different.It should be noted that first piece of area
In domain, each page can be operated in each unit.In second piece of region, only LSB page in each unit
Can be operated.I.e. second piece region and first piece of region be LSB page whether can by different in operation,
It is different rather than physical attribute.
Data write and backup module 2, for user data to be write into first piece of region, wherein, inciting somebody to action
In first piece of region of user data write-in before MSB pages, by user in MSB pages of corresponding LSB page
LSB page in data backup to second piece of region.
Specifically, in second piece of region only LSB page can by operation can for set second piece of region in only
LSB page can be operated, and can also be at backup user data to second piece of region, only by user data
Back up to the LSB page in second piece of region.
It should be noted that will be used in MSB pages of corresponding LSB page in data write-in and backup module 2
User data only backs up to the LSB page in second piece of region, by MSB pages of corresponding LSB in correlation technique
User data backup is to the LSB page of other blocks or MSB pages in page.And user data is write to LSB page
Speed relatively to MSB pages of write-in user data is fast, therefore, the embodiment of the present invention will compared with correlation technique
In MSB pages of corresponding LSB page user data backup to other blocks mode, system backup write performance obtains
To being greatly enhanced.Even if MSB pages of the process in user data is write into first piece of region simultaneously
Middle power down, in the LSB page in second piece of region user data is still present, it is to avoid MLC NAND
The pairing page power down crash issue of flash memory.
According to embodiments of the present invention three, receive multiple field memory cell to be written in data reception module
After the user data of nand flash memory, data write-in and backup module store user data write-in multiple field
First piece of region in unit nand flash memory, wherein, in user data is write into first piece of region
Before MSB pages, data write-in and backup module are standby by user data in MSB pages of corresponding LSB page
Part to the LSB page in second piece of region in multiple field memory cell nand flash memory.So as to reality
Now storage user data to multiple field memory cell nand flash memory such as MLC nand flash memories or
The TLC nand flash memories of write-in user data or basis storage when each page is different in basic memory cell
When each page is different in unit during QLC nand flash memories of write-in user data etc., quick backup
User data in LSB page, while solving the pairing page power down of multiple field memory cell nand flash memory
Crash issue, improves system backup write performance.
Example IV
Reference picture 7, shows the structure of the device embodiment of another quick backup LSB page of the invention
Block diagram, can specifically include such as lower module：
Data reception module 71, the user for receiving multiple field memory cell nand flash memory to be written
Data；Multiple field memory cell nand flash memory is divided into first piece of region and second piece of region.
Data write and backup module 72, for user data to be write into first piece of region, wherein, inciting somebody to action
In first piece of region of user data write-in before MSB pages, by user in MSB pages of corresponding LSB page
LSB page in data backup to second piece of region.
Mapping relations set up module 73, for setting up user data with corresponding memory space in second piece of region
Between mapping relations.
Mapping relations set up module 73 can be in order to the user in correct reading, second piece of region of erasing
Data carry out other operations.
First release module 74, for when user data writes completion, release to be backed up in second piece of region
The block of user data；Or second release module 75, for when user data write complete when, release second
Backup user data has write full block in block region.
Second piece of storage in region can be reclaimed by the first release module 74 or the second release module 75 empty
Between, it is that user data is prepared in the corresponding LSB page of next MSB pages of backup, raising systematic function.
Wherein, reclaiming second piece of back up memory space in region can include but is not limited to the first release module 74
Or second release module 75, for example can also be when user data write complete when, discharge second piece of region
The 3rd release module.
According to embodiments of the present invention four, receive multiple field memory cell to be written in data reception module
After the user data of nand flash memory, data write-in and backup module store user data write-in multiple field
First piece of region in unit nand flash memory, wherein, in user data is write into first piece of region
Before MSB pages, data write-in and backup module are standby by user data in MSB pages of corresponding LSB page
Part maps pass to the LSB page in second piece of region in multiple field memory cell nand flash memory
System sets up the mapping relations that module is set up between user data and corresponding memory space in second piece of region, most
Afterwards when user data writes to be completed, backup user data in second piece of region of the first release module release
Backup user data has write full block etc. in second piece of region of block or the release of the second release module.So as to
Realize storage user data to multiple field memory cell nand flash memory such as MLC nand flash memories,
Or the TLC nand flash memories of write-in user data or basis are deposited during each page difference in basic memory cell
It is quick standby when each page is different in storage unit during QLC nand flash memories of write-in user data etc.
User data in part LSB page, and back up memory space is reclaimed, while solving multiple field memory cell
The pairing page power down crash issue of nand flash memory, improves systematic function.
For device embodiment, because it is substantially similar to embodiment of the method, so the comparing of description
Simply, the relevent part can refer to the partial explaination of embodiments of method.
Embodiment five
The embodiment of the present invention also proposed a kind of flash memory system, can specifically include such as lower module：Multiple field
The device of memory cell nand flash memory and above-mentioned quick backup LSB page, wherein, the multiple field
Memory cell nand flash memory is divided into first piece of region and second piece of region.
Wherein, flash memory system specifically can be implemented as SSD (Solid State Drives, solid state hard disc),
SD (Secure Digital Memory Card, safe digital card) cards, Micro SD cards are (a kind of superfine
Small SD card), MMC (Multi-Media Card, multimedia card) cards and flash memory file system etc..
According to embodiments of the present invention five, the device that flash memory system passes through quick backup LSB page, Ke Yishi
Now storage user data to multiple field memory cell nand flash memory such as MLC nand flash memories or
The TLC nand flash memories of write-in user data or basis storage when each page is different in basic memory cell
When each page is different in unit during QLC nand flash memories of write-in user data etc., quick backup
User data in LSB page, and back up memory space is reclaimed, while solving multiple field memory cell
The pairing page power down crash issue of nand flash memory, improves flash memory system performance.
Each embodiment in this specification is described by the way of progressive, and each embodiment is stressed
Be all difference with other embodiment, between each embodiment identical similar part mutually referring to
.
It should be understood by those skilled in the art that, the embodiment of the embodiment of the present invention can be provided as method, dress
Put or computer program product.Therefore, the embodiment of the present invention can using complete hardware embodiment, completely
The form of the embodiment in terms of software implementation or combination software and hardware.And, the embodiment of the present invention
Can use can be situated between in one or more computers for wherein including computer usable program code with storage
The computer journey implemented in matter (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.)
The form of sequence product.
The embodiment of the present invention is with reference to method according to embodiments of the present invention, terminal device (system) and meter
The flow chart and/or block diagram of calculation machine program product is described.It should be understood that can be by computer program instructions
Realize each flow and/or square frame and flow chart and/or the square frame in flow chart and/or block diagram
The combination of flow and/or square frame in figure.Can provide these computer program instructions to all-purpose computer,
The processor of special-purpose computer, Embedded Processor or other programmable data processing terminal equipments is producing
One machine so that by the computing device of computer or other programmable data processing terminal equipments
Instruction produce for realizing in one flow of flow chart or multiple one square frame of flow and/or block diagram or
The device of the function of being specified in multiple square frames.
These computer program instructions may be alternatively stored in can guide computer or other programmable datas to process
In the computer-readable memory that terminal device works in a specific way so that storage is in the computer-readable
Instruction in memory is produced and includes the manufacture of command device, and command device realization is in flow chart one
The function of being specified in flow or multiple one square frame of flow and/or block diagram or multiple square frames.
These computer program instructions can also be loaded into computer or other programmable data processing terminals set
It is standby upper so that execution series of operation steps is in terms of producing on computer or other programmable terminal equipments
The treatment that calculation machine is realized, so as to the instruction performed on computer or other programmable terminal equipments provides use
In realization in one flow of flow chart or multiple one square frame of flow and/or block diagram or multiple square frames
The step of function of specifying.
Although having been described for the preferred embodiment of the embodiment of the present invention, those skilled in the art are once
Basic creative concept is known, then other change and modification can be made to these embodiments.So,
Appended claims are intended to be construed to include preferred embodiment and fall into the institute of range of embodiment of the invention
Have altered and change.
Finally, in addition it is also necessary to explanation, herein, such as first and second or the like relational terms
It is used merely to make a distinction an entity or operation with another entity or operation, and not necessarily requires
Or imply between these entities or operation there is any this actual relation or order.And, art
Language " including ", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion so that
Process, method, article or terminal device including a series of key elements not only include those key elements, and
Also include other key elements for being not expressly set out, or also include for this process, method, article or
The intrinsic key element of person's terminal device.In the absence of more restrictions, by sentence " including
It is individual ... " limit key element, it is not excluded that at the process including the key element, method, article or end
Also there is other identical element in end equipment.
Above to a kind of method of quick backup LSB page provided by the present invention, a kind of quick backup LSB
The device and a kind of flash memory system of page, are described in detail, and specific case used herein is to this hair
Bright principle and implementation method is set forth, and the explanation of above example is only intended to help and understands this hair
Bright method and its core concept；Simultaneously for those of ordinary skill in the art, according to of the invention
Thought, will change in specific embodiments and applications, in sum, this specification
Content should not be construed as limiting the invention.
Claims (9)
1. a kind of method of quick backup LSB page, it is characterised in that including：
Receive the user data of multiple field memory cell nand flash memory to be written；The multiple field storage
Unit nand flash memory is divided into first piece of region and second piece of region；
The user data is write into first piece of region, wherein, the user data is being write into institute
State in first piece of region before MSB pages, user data in described MSB pages corresponding LSB page is standby
Part to the LSB page in second piece of region.
2. method according to claim 1, it is characterised in that also include：
The mapping relations set up between the user data and corresponding memory space in second piece of region.
3. method according to claim 1, it is characterised in that also include：
When the user data writes to be completed, release backs up the user data in second piece of region
Block.
4. method according to claim 1, it is characterised in that also include：
When the user data writes to be completed, release backs up the user data in second piece of region
Write full block.
5. a kind of device of quick backup LSB page, it is characterised in that including：
Data reception module, the number of users for receiving multiple field memory cell nand flash memory to be written
According to；The multiple field memory cell nand flash memory is divided into first piece of region and second piece of region；
Data write and backup module, for the user data to be write into first piece of region, wherein,
Before during the user data is write into first piece of region MSB pages, by described MSB pages correspondence
LSB page in LSB page in user data backup to second piece of region.
6. device according to claim 5, it is characterised in that also include：
Mapping relations set up module, and for setting up, the user data is corresponding with second piece of region to be deposited
Mapping relations between storage space.
7. device according to claim 5, it is characterised in that also include：
First release module, for when the user data writes completion, discharging second piece of region
The block of the middle backup user data.
8. device according to claim 5, it is characterised in that also include：
Second release module, for when the user data writes completion, discharging second piece of region
The middle backup user data has write full block.
9. a kind of flash memory system, it is characterised in that including：Multiple field memory cell nand flash memory and
The device of the quick backup LSB page according to any one of claim 5-8, wherein, the multilayer
Formula memory cell nand flash memory is divided into first piece of region and second piece of region.
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