CN101656106B - Method for writing data into EEPROM and device thereof - Google Patents
Method for writing data into EEPROM and device thereof Download PDFInfo
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- CN101656106B CN101656106B CN 200910090573 CN200910090573A CN101656106B CN 101656106 B CN101656106 B CN 101656106B CN 200910090573 CN200910090573 CN 200910090573 CN 200910090573 A CN200910090573 A CN 200910090573A CN 101656106 B CN101656106 B CN 101656106B
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Abstract
The invention discloses a method for writing data into an EEPROM and a device thereof; the method comprises: writing all data needed to be written into the EEPROM into a RAM; acquiring all the data from the RAM, writing the acquired data into a backup area of the EEPROM for once, and setting effective marker bits corresponding to all the data in the backup area to be effective; respectively writing the data into a target area of the EEPROM; and setting the effective marker bits to be ineffective, and erasing the data stored inside the backup area. The method and the device can ensure the date writing to be atomicity operation and improves the efficiency for writing the data compared with the prior art.
Description
Technical field
The present invention relates to Erarable Programmable Read only Memory EEPROM application, relate in particular to a kind of method and device that writes data to EEPROM.
Background technology
At present in the application of some EEPROM; Because the importance and the susceptibility of data of storage wherein, the EEPROM in the smart card for example is when withholing, writing business service such as Transaction Information, transaction details; It is the atomicity operation that the EEPROM of requirement in smart card writes data; Be about to carry out a service needed and write the total data of EEPROM, or all write, or do not write all.And the power supply of smart card depends on external environment condition, and any one step that might write data at the EEPROM in smart card is cut off the power supply, and causes data to write interruption.
The existing data write operation that guarantees is that the method for writing data of atomicity operation is: each blocks of data that writes for needs; Respectively each blocks of data is write in the purpose district of EEPROM; Specifically the flow process that writes for every blocks of data does, the legacy data of storing in earlier that this blocks of data is the corresponding purpose district writes in the backup area of EEPROM, this blocks of data is write in the corresponding purpose district again; After so each blocks of data all being written to the purpose district, again the legacy data in the backup area is wiped.If in the process that data write, cut off the power supply, then when smart card electrification reset next time, can the legacy data in the backup area be returned in the corresponding purpose district, and wipe the legacy data in the backup area, the data that need write before having guaranteed all do not write.
Need in EEPROM, write data twice for writing of every blocks of data in the said method; Once being that legacy data is write backup area, once is that this blocks of data is write the purpose district, because it is consuming time longer to write data to EEPROM; Write for twice and cause writing speed slow, efficient is low.
Summary of the invention
The embodiment of the invention provides a kind of method and device that writes data to EEPROM, when guaranteeing that data are written as the atomicity operation, compared with prior art, improves the efficient that data write.
The embodiment of the invention provides a kind of method that writes data to EEPROM, comprising:
Each blocks of data that needs is write said EEPROM writes in the random access memory ram, and the address that assurance is stored in said each blocks of data among the said RAM is continuous;
From said RAM, obtain said each blocks of data, in the backup area of the said EEPROM of one-time write, and corresponding all effective marker positions of said each blocks of data in the said backup area are made as effectively;
Said each blocks of data is write respectively in the purpose district of said EEPROM;
It is invalid that said effective marker position is made as, and wipe said each blocks of data of storing in the said backup area.
The embodiment of the invention also provides a kind of device that writes data to EEPROM, comprising:
First writing unit, each blocks of data that is used for needs are write said EEPROM writes random access memory ram, and the address that guarantees to be stored in said each blocks of data among the said RAM is continuous;
Second writing unit is used for obtaining said each blocks of data from said RAM, in the backup area of the said EEPROM of one-time write, and corresponding all effective marker positions of said each blocks of data in the said backup area is made as effectively;
The 3rd writing unit is used for said each blocks of data is write respectively the purpose district of said EEPROM;
Erase unit, it is invalid to be used for said effective marker position is made as, and wipes said each blocks of data of storing in the said backup area.
In the embodiment of the invention, each blocks of data that at first needs is write EEPROM writes in the random access memory ram; From RAM, obtain each blocks of data again, in the backup area of one-time write EEPROM, and corresponding all effective marker positions of said each blocks of data in the backup area are made as effectively; And each blocks of data write respectively in the purpose district of EEPROM; And this effective marker position is made as invalid, wipe each blocks of data of storing in the backup area.The method that adopts the embodiment of the invention to provide; If in the process that above-mentioned data write, cut off the power supply; Then when this EEPROM belongs to device electrification reset next time; If this effective marker position is invalid, can not return in the purpose district even if then stored partial data in the backup area yet, guarantee that each blocks of data does not all write; If this effective marker position is effectively, then can each blocks of data in the backup area be write respectively in the purpose district, guarantee that each blocks of data all writes.And because before each blocks of data is write backup area; Each blocks of data is written among the RAM,, compares prior art and reduced the number of times that data is write backup area so can each blocks of data be write in the backup area as monoblock data are disposable; Again since to EEPROM write data number of times how much be the deciding factor that writes the speed of data to EEPROM; Therefore, reduce the number of times that writes data, promptly improved the efficient that data write.
Description of drawings
Fig. 1 writes the process flow diagram of data for what provide in the embodiment of the invention to EEPROM;
Fig. 2 is for writing each blocks of data in the embodiment of the invention process flow diagram of RAM;
The structural representation that Fig. 3 stores in RAM for each blocks of data in the embodiment of the invention;
Fig. 4 is the process flow diagram that data are recovered during the smart card electrification reset in the embodiment of the invention;
Fig. 5 writes the structural representation of the device of data for what provide in the embodiment of the invention to EEPROM.
Embodiment
The embodiment of the invention provides a kind of and writes the method for data to EEPROM, and is as shown in Figure 1, comprising:
Step S101, each blocks of data that needs are write EEPROM write among the RAM.
Step S102, from RAM, obtain each blocks of data, in the backup area of one-time write EEPROM, and corresponding all effective marker positions of said each blocks of data in the backup area are made as effectively.
Step S103, each blocks of data is write respectively in the purpose district of EEPROM.
Step S104, this effective marker position is made as invalid, and wipes each blocks of data of storing in the backup area.
Below in conjunction with accompanying drawing, write data instance (this method is equally applicable to write data to the EEPROM of other devices) with the EEPROM in smart card, method provided by the invention and device are described in detail.
Shown in Figure 2 for each blocks of data being write the process flow diagram among the RAM of smart card among the above-mentioned steps S101, specifically comprise:
Step S201, obtain the address in the corresponding EEPROM purpose district of first blocks of data, the length and the first blocks of data content of first blocks of data.
The length of this blocks of data that step S202, basis are obtained judges whether the storage space among the current RAM enough is used to store this blocks of data, if enough, then gets into step S204; Otherwise, get into step S203.
Step S203, send data write error mistake prompting.Further, this prompting can be pointed out for memory space inadequate, is used for the reminder-data write error, and error reason is a memory space inadequate among the RAM.
Step S204, this blocks of data that will obtain write RAM.Concrete when writing this blocks of data among the RAM, guarantee that the address and the preceding address of once storing this blocks of data of this blocks of data of storage among the RAM is continuous, guaranteeing follow-uply can to regard each blocks of data as a monoblock, disposablely obtain and write in the backup area.
Whether step S205, the last data that write RAM of judgement are last blocks of data, if not, then get into step S206; Otherwise, get into step S207.
Step S206, obtain the address in the corresponding EEPROM purpose district of next blocks of data, length and next blocks of data content of next blocks of data, get into above-mentioned steps S202 then.
Step S207, flow process finish; Perhaps
Corresponding value when effective also with the effective marker position of corresponding all said each blocks of data in the backup area; Write among the RAM; Purpose be can be in the follow-up backup area that each blocks of data is write EEPROM in; Also with this effective marker position when effective corresponding value write its correspondence position, to reduce the number of times that writes data to EEPROM, raise the efficiency.
Preferable, this step can also comprise and calculating and whole said each blocks of data corresponding check values, and the proof test value that calculates is write among the RAM, is used to guarantee the correctness of data.
In the embodiment of the invention, the RAM in the above-mentioned flow process shown in Figure 2 can be external random access memory XRAM.
Through above-mentioned flow process shown in Figure 2; Each blocks of data is write among the RAM, the structure that each blocks of data is stored in RAM can be as shown in Figure 3, so; Each blocks of data that store among the RAM this moment can be regarded monoblock data as; Then among the above-mentioned steps S102, can from RAM, obtain these monoblock data, in the backup area of one-time write EEPROM; And the effective marker position of corresponding these monoblock data in the backup area is made as effectively, be equivalent to promptly with the effective marker position that the value of correspondence writes its correspondence position in the backup area when effective.
Preferable, in order to reduce the number of times that writes data to EEPROM, among the above-mentioned steps S207 also with the effective marker position when effective corresponding value write among the RAM; Then among the above-mentioned steps S102; Corresponding value is regarded monoblock data as when can be with each blocks of data and effective marker position effective, together in the one-time write backup area, at this moment; Need satisfy effective marker position the writing of corresponding value when effective, after the writing of each blocks of data.For satisfying this requirement, be to write if in backup area, write data by address order from low to high, then the address of effective marker position is higher than the address of storing each blocks of data in the backup area; If in backup area, write data is to write by address order from high to low, and then the address of effective marker position is lower than the address of storing each blocks of data in the backup area.
Preferable, can also also calculate among the above-mentioned steps S207 and whole said each blocks of data corresponding check value for guaranteeing the correctness of data; And the proof test value that calculates write among the RAM; Then in the above-mentioned steps 102, corresponding value is regarded monoblock data as when can be with each blocks of data, the proof test value that calculates and effective marker position effective, together in the one-time write backup area; At this moment, also need satisfy the effective marker position when effective corresponding value write at last.
After writing each blocks of data in the backup area, among the above-mentioned steps S103, each blocks of data is write respectively in the purpose district of EEPROM.Because; Each blocks of data corresponding address stored in the purpose district is discontinuous, so, can only write every blocks of data respectively; Specifically be based on address and the length of this blocks of data in the corresponding purpose district of this blocks of data, this blocks of data content is written in the purpose district.When before every blocks of data writes, obtaining this blocks of data,, therefore, can from RAM, obtain, also can from backup area, obtain owing to all store each blocks of data among the RAM with in the backup area.
After in the purpose district that each blocks of data is write EEPROM respectively through above-mentioned steps S103; Promptly accomplished writing of whole said each blocks of data; It is invalid then need the effective marker position in the backup area to be made as, and promptly wipes effective marker position corresponding value when effective from correspondence position, avoids when smart card electrification reset next time; According to the effective restore data from backup area in effective marker position, and wipe each blocks of data of storing in the backup area.So far, accomplished the process that in EEPROM, writes data.
But in order to guarantee that data are written as atomicity operation, also need when the each electrification reset of smart card, carry out Data Recovery Process, shown in Figure 4 is the process flow diagram of data recovery during the smart card electrification reset in the embodiment of the invention, comprising:
Step S401, smart card electrification reset begin.
Step S402, judge whether the effective marker position effective,, accomplish writing of total data not normally if expression when EEPROM writes data interruption took place last time, need be from backup area restore data, then get into step S403; Otherwise, get into step S406.
Step S403, calculate and whole said each blocks of data corresponding check values, and with backup area in the proof test value stored more whether equate, if equal, then get into step S404; Otherwise, get into step S406.
Step S404, from backup area, obtain each blocks of data, write respectively in the purpose district of EEPROM.Specifically be based on address and the length of this blocks of data in the corresponding purpose district of every blocks of data, the content of this blocks of data is written in the purpose district.
Step S405, through above-mentioned steps S404; Each blocks of data of storing in the backup area all is written in the purpose district; It is invalid that the effective marker position is made as, and promptly clashes effective marker position corresponding value when effective from correspondence position, avoids when smart card electrification reset next time restore data once more.
Step S406, wipe each blocks of data of storing in the backup area.
Through above-mentioned flow process shown in Figure 4, when last secondary data writes, do not accomplish writing of total data owing to take place to interrupt fashionable, can accomplish writing of total data through restore data from backup area; Restore data when passing through electrification reset in the prior art; What recover is the legacy data of storage, and in the embodiment of the invention, essence is that the needs of storing in the backup area are write the purpose district; And also do not write the new data in purpose district, continue to write in the purpose district.
Description according to the said method flow process can be known; The method that the embodiment of the invention provides, can accomplishing EEPROM in smart card, to write data be the atomicity operation, and compare prior art; Writing of a total data is fashionable accomplishing; Reduce the number of times that writes data to EEPROM, therefore, improved the efficient that data write.
Based on same inventive concept; A kind ofly write the method for data to EEPROM according to what the above embodiment of the present invention provided, correspondingly, another embodiment of the present invention also provides a kind of device that writes data to EEPROM; Its structural representation is as shown in Figure 5, specifically comprises;
The 3rd writing unit 503 is used for each blocks of data is write respectively the purpose district of EEPROM;
Erase unit 504, it is invalid to be used for the effective marker position is made as, and wipes each blocks of data of storing in the backup area.
Preferable, above-mentioned first writing unit 501 is used for also with the effective marker position that corresponding value writes RAM when effective;
Above-mentioned second writing unit 502 specifically is used for obtaining each blocks of data and effective marker position corresponding value when effective from RAM, in the backup area of one-time write EEPROM; Corresponding value was written in after the writing of each blocks of data when wherein, the effective marker position was effective.
Preferable, said apparatus also comprises:
Mistake indicating member 505 is used in the process that each blocks of data is write RAM, if the insufficient memory among the RAM then sends the prompting of data write error mistake.
Preferable, above-mentioned second writing unit 502 also is used for when each blocks of data is write the backup area of EEPROM, will write backup area with each blocks of data corresponding check value.
Preferable, RAM is external random access memory XRAM.
In sum, the scheme that the embodiment of the invention provides comprises: each blocks of data that needs is write EEPROM writes among the RAM; And from RAM, obtain each blocks of data, in the backup area of one-time write EEPROM, and corresponding all effective marker positions of said each blocks of data in the backup area are made as effectively; And each blocks of data write respectively in the purpose district of EEPROM; And this effective marker position is made as invalid, and wipe each blocks of data of storing in the backup area.The scheme that adopts the embodiment of the invention to provide when guaranteeing that data are written as the atomicity operation, compared with prior art, has improved the efficient that data write.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. one kind writes the method for data to EEPROM EEPROM, it is characterized in that, comprising:
Each blocks of data that needs is write said EEPROM writes in the random access memory ram, and the address that assurance is stored in said each blocks of data among the said RAM is continuous;
From said RAM, obtain said each blocks of data, in the backup area of the said EEPROM of one-time write, and corresponding all effective marker positions of said each blocks of data in the said backup area are made as effectively;
Said each blocks of data is write respectively in the purpose district of said EEPROM;
It is invalid that said effective marker position is made as, and wipe said each blocks of data of storing in the said backup area.
2. the method for claim 1 is characterized in that, also comprises:
Corresponding value writes among the said RAM when effective with said effective marker position;
Saidly from said RAM, obtain said each blocks of data, in the backup area of the said EEPROM of one-time write, and the effective marker position of corresponding said each blocks of data of said backup area be made as effectively, be specially:
From said RAM, obtain said each blocks of data and said effective marker position corresponding value when effective, in the backup area of the said EEPROM of one-time write; Corresponding value was written in after the writing of said each blocks of data when wherein, said effective marker position was effective.
3. the method for claim 1 is characterized in that, also comprises:
Said each blocks of data is being write in the process of said RAM, if the insufficient memory among the said RAM then sends the prompting of data write error mistake.
4. the method for claim 1 is characterized in that, also comprises:
When said each blocks of data is write the backup area of said EEPROM, also will write said backup area with said each blocks of data corresponding check value.
5. like the arbitrary described method of claim 1-4, it is characterized in that said RAM is external random access memory XRAM.
6. one kind writes the device of data to EEPROM EEPROM, it is characterized in that, comprising:
First writing unit, each blocks of data that is used for needs are write said EEPROM writes random access memory ram, and the address that guarantees to be stored in said each blocks of data among the said RAM is continuous;
Second writing unit is used for obtaining said each blocks of data from said RAM, in the backup area of the said EEPROM of one-time write, and corresponding all effective marker positions of said each blocks of data in the said backup area is made as effectively;
The 3rd writing unit is used for said each blocks of data is write respectively the purpose district of said EEPROM;
Erase unit, it is invalid to be used for said effective marker position is made as, and wipes said each blocks of data of storing in the said backup area.
7. device as claimed in claim 6 is characterized in that, said first writing unit also is used for said effective marker position value corresponding when effective and writes said RAM;
Said second writing unit specifically is used for obtaining said each blocks of data and said effective marker position corresponding value when effective from said RAM, in the backup area of the said EEPROM of one-time write; Corresponding value was written in after the writing of said each blocks of data when wherein, said effective marker position was effective.
8. device as claimed in claim 6 is characterized in that, also comprises:
The mistake indicating member is used in the process that said each blocks of data is write said RAM, if the insufficient memory among the said RAM then sends the prompting of data write error mistake.
9. device as claimed in claim 6 is characterized in that, said second writing unit also is used for when said each blocks of data is write the backup area of said EEPROM, will write said backup area with said each blocks of data corresponding check value.
10. like the arbitrary described device of claim 6-9, it is characterized in that said RAM is external random access memory XRAM.
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| CN 200910090573 CN101656106B (en) | 2009-08-27 | 2009-08-27 | Method for writing data into EEPROM and device thereof |
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| CN 200910090573 CN101656106B (en) | 2009-08-27 | 2009-08-27 | Method for writing data into EEPROM and device thereof |
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| CN101656106A CN101656106A (en) | 2010-02-24 |
| CN101656106B true CN101656106B (en) | 2012-07-25 |
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Families Citing this family (17)
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| CN101840358B (en) * | 2010-04-20 | 2013-03-20 | 惠州市德赛西威汽车电子有限公司 | Car audio EEPROM (Electrically Programmable Read-Only-Memory) data protection and verification method |
| CN102147846A (en) * | 2010-12-29 | 2011-08-10 | 北京握奇数据***有限公司 | Method for writing data in intelligent card and intelligent card |
| CN102609332A (en) * | 2011-01-19 | 2012-07-25 | 上海华虹集成电路有限责任公司 | Power failure protection method for intelligent IC (integrated circuit) card data |
| CN102508723A (en) * | 2011-09-28 | 2012-06-20 | 山东神思电子技术股份有限公司 | Power-failure protection method orientated to IC (Integrated Circuit) card |
| CN102567141B (en) * | 2011-12-13 | 2014-03-05 | 北京握奇数据***有限公司 | Data item backup method and smart card |
| CN102567146B (en) * | 2011-12-29 | 2014-01-22 | 北京握奇数据***有限公司 | Log backup method and device and smart card |
| CN102768631A (en) * | 2012-06-28 | 2012-11-07 | 惠州市德赛西威汽车电子有限公司 | Data storage and verification method |
| CN102890657B (en) * | 2012-10-10 | 2016-04-27 | 深圳市航盛电子股份有限公司 | The method that the reading and writing data of a kind of EEPROM of minimizing is made mistakes |
| CN104080107B (en) * | 2014-04-15 | 2017-09-29 | 石家庄安瑞科气体机械有限公司 | The method that radio network gateway register mapping table is set automatically |
| CN105573858B (en) * | 2014-10-13 | 2018-07-20 | 中芯国际集成电路制造(上海)有限公司 | The store method and electrically erasable programming read-only memory of data |
| CN106816175A (en) * | 2015-12-01 | 2017-06-09 | 中芯国际集成电路制造(上海)有限公司 | The control method and device of memory |
| CN105868127A (en) * | 2016-03-23 | 2016-08-17 | 北京经纬恒润科技有限公司 | Data storage method and device and data reading method and device |
| CN106503595A (en) * | 2016-10-31 | 2017-03-15 | 山东力创科技股份有限公司 | A kind of industrial instrument secure storage method of data |
| CN107729972B (en) * | 2017-09-01 | 2020-09-08 | 捷德(中国)科技有限公司 | Data protection method for intelligent IC card |
| CN109130866B (en) * | 2018-08-27 | 2022-03-11 | 奇瑞汽车股份有限公司 | New energy automobile driving data power-on and power-off storage control method |
| CN109240622B (en) * | 2018-09-26 | 2021-10-08 | 潍柴动力股份有限公司 | Method and system for writing EEPROM data |
| CN112181728B (en) * | 2020-09-29 | 2022-07-22 | 山东华翼微电子技术股份有限公司 | High-security CPU smart card chip data power-down prevention processing method |
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