CH616024A5 - - Google Patents

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Publication number
CH616024A5
CH616024A5 CH563777A CH563777A CH616024A5 CH 616024 A5 CH616024 A5 CH 616024A5 CH 563777 A CH563777 A CH 563777A CH 563777 A CH563777 A CH 563777A CH 616024 A5 CH616024 A5 CH 616024A5
Authority
CH
Switzerland
Prior art keywords
transistors
channel
doping
substrate
transistor
Prior art date
Application number
CH563777A
Other languages
English (en)
French (fr)
Inventor
Mougahed Darwish
Henri J Oguey
Original Assignee
Centre Electron Horloger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Electron Horloger filed Critical Centre Electron Horloger
Priority to CH563777A priority Critical patent/CH616024A5/fr
Priority to US05/898,681 priority patent/US4205342A/en
Priority to JP5242878A priority patent/JPS549589A/ja
Priority to DE19782819861 priority patent/DE2819861A1/de
Publication of CH616024A5 publication Critical patent/CH616024A5/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CH563777A 1977-05-05 1977-05-05 CH616024A5 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CH563777A CH616024A5 (de) 1977-05-05 1977-05-05
US05/898,681 US4205342A (en) 1977-05-05 1978-04-21 Integrated circuit structure having regions of doping concentration intermediate that of a substrate and a pocket formed therein
JP5242878A JPS549589A (en) 1977-05-05 1978-05-02 Ic using complementary mos transistor
DE19782819861 DE2819861A1 (de) 1977-05-05 1978-05-05 Integrierte schaltung mit komplementaeren mos-transistoren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH563777A CH616024A5 (de) 1977-05-05 1977-05-05

Publications (1)

Publication Number Publication Date
CH616024A5 true CH616024A5 (de) 1980-02-29

Family

ID=4296944

Family Applications (1)

Application Number Title Priority Date Filing Date
CH563777A CH616024A5 (de) 1977-05-05 1977-05-05

Country Status (4)

Country Link
US (1) US4205342A (de)
JP (1) JPS549589A (de)
CH (1) CH616024A5 (de)
DE (1) DE2819861A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4295897B1 (en) * 1979-10-03 1997-09-09 Texas Instruments Inc Method of making cmos integrated circuit device
US4391650A (en) * 1980-12-22 1983-07-05 Ncr Corporation Method for fabricating improved complementary metal oxide semiconductor devices
NL8304035A (nl) * 1983-11-24 1985-06-17 Philips Nv Blooming ongevoelige beeldopneeminrichting en werkwijze ter vervaardiging daarvan.
WO1985005736A1 (en) * 1984-05-25 1985-12-19 American Microsystems, Inc. Tri-well cmos technology
JPS61229366A (ja) * 1985-04-03 1986-10-13 Rohm Co Ltd 半導体装置の製造方法
JPS61229367A (ja) * 1985-04-04 1986-10-13 Rohm Co Ltd 半導体装置およびその製造方法
US4717836A (en) * 1986-02-04 1988-01-05 Burr-Brown Corporation CMOS input level shifting circuit with temperature-compensating n-channel field effect transistor structure
JPS6384067A (ja) * 1986-09-27 1988-04-14 Toshiba Corp 半導体装置の製造方法
JPH0191446A (ja) * 1987-10-02 1989-04-11 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6211555B1 (en) 1998-09-29 2001-04-03 Lsi Logic Corporation Semiconductor device with a pair of transistors having dual work function gate electrodes

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3374406A (en) * 1964-06-01 1968-03-19 Rca Corp Insulated-gate field-effect transistor
US3436622A (en) * 1966-12-20 1969-04-01 Texas Instruments Inc Compound channel insulated gate triode
US3593069A (en) * 1969-10-08 1971-07-13 Nat Semiconductor Corp Integrated circuit resistor and method of making the same
US3608189A (en) * 1970-01-07 1971-09-28 Gen Electric Method of making complementary field-effect transistors by single step diffusion
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
US3821776A (en) * 1970-12-28 1974-06-28 Kogyo Gijutsuin Diffusion self aligned mosfet with pinch off isolation
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element

Also Published As

Publication number Publication date
US4205342A (en) 1980-05-27
JPS549589A (en) 1979-01-24
DE2819861A1 (de) 1978-11-09

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