CH502000A - Verfahren zum Herstellen einer monolithischen Halbleiteranordnung - Google Patents

Verfahren zum Herstellen einer monolithischen Halbleiteranordnung

Info

Publication number
CH502000A
CH502000A CH168269A CH168269A CH502000A CH 502000 A CH502000 A CH 502000A CH 168269 A CH168269 A CH 168269A CH 168269 A CH168269 A CH 168269A CH 502000 A CH502000 A CH 502000A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
monolithic semiconductor
monolithic
semiconductor
Prior art date
Application number
CH168269A
Other languages
German (de)
English (en)
Inventor
John Glinski Vincent
Thomas Murphy Bernard
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH502000A publication Critical patent/CH502000A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/765Making of isolation regions between components by field effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CH168269A 1968-02-05 1969-02-04 Verfahren zum Herstellen einer monolithischen Halbleiteranordnung CH502000A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70316568A 1968-02-05 1968-02-05

Publications (1)

Publication Number Publication Date
CH502000A true CH502000A (de) 1971-01-15

Family

ID=24824294

Family Applications (1)

Application Number Title Priority Date Filing Date
CH168269A CH502000A (de) 1968-02-05 1969-02-04 Verfahren zum Herstellen einer monolithischen Halbleiteranordnung

Country Status (7)

Country Link
BE (1) BE726353A (fr)
CH (1) CH502000A (fr)
DE (1) DE1904503B2 (fr)
ES (1) ES363184A1 (fr)
FR (1) FR1600658A (fr)
IL (1) IL31355A (fr)
NL (1) NL6901819A (fr)

Also Published As

Publication number Publication date
IL31355A0 (en) 1969-02-27
BE726353A (fr) 1969-05-29
DE1904503B2 (de) 1971-06-03
FR1600658A (fr) 1970-07-27
DE1904503A1 (de) 1969-11-27
NL6901819A (fr) 1969-08-07
ES363184A1 (es) 1970-11-16
IL31355A (en) 1971-11-29

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Legal Events

Date Code Title Description
PL Patent ceased