CH498490A - Verfahren zum Herstellen eines Halbleiterbauelementes - Google Patents

Verfahren zum Herstellen eines Halbleiterbauelementes

Info

Publication number
CH498490A
CH498490A CH1252769A CH1252769A CH498490A CH 498490 A CH498490 A CH 498490A CH 1252769 A CH1252769 A CH 1252769A CH 1252769 A CH1252769 A CH 1252769A CH 498490 A CH498490 A CH 498490A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor component
semiconductor
component
Prior art date
Application number
CH1252769A
Other languages
English (en)
Inventor
Kurt Dr Raithel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH498490A publication Critical patent/CH498490A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • H01L23/4924Bases or plates or solder therefor characterised by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Thyristors (AREA)
  • Silicon Compounds (AREA)
CH1252769A 1968-10-17 1969-08-19 Verfahren zum Herstellen eines Halbleiterbauelementes CH498490A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681803489 DE1803489A1 (de) 1968-10-17 1968-10-17 Verfahren zum Herstellen eines Halbleiterbauelementes

Publications (1)

Publication Number Publication Date
CH498490A true CH498490A (de) 1970-10-31

Family

ID=5710695

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1252769A CH498490A (de) 1968-10-17 1969-08-19 Verfahren zum Herstellen eines Halbleiterbauelementes

Country Status (7)

Country Link
US (1) US3665594A (de)
JP (1) JPS4839866B1 (de)
CH (1) CH498490A (de)
DE (1) DE1803489A1 (de)
FR (1) FR2020901B1 (de)
GB (1) GB1225088A (de)
SE (1) SE341950B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886583A (en) * 1971-07-01 1975-05-27 Motorola Inc Insulated gate-field-effect transistor
FR2159632A5 (de) * 1971-11-05 1973-06-22 Thomson Csf
JPS532189U (de) * 1976-06-23 1978-01-10
JPS5322669U (de) * 1976-08-05 1978-02-25
JPS5946415B2 (ja) * 1978-04-28 1984-11-12 株式会社日立製作所 半導体装置の製造方法
US4293587A (en) * 1978-11-09 1981-10-06 Zilog, Inc. Low resistance backside preparation for semiconductor integrated circuit chips
US4278195A (en) * 1978-12-01 1981-07-14 Honeywell Inc. Method for low temperature bonding of silicon and silicon on sapphire and spinel to nickel and nickel steel and apparatus using such _a bonding technique
NL8004139A (nl) * 1980-07-18 1982-02-16 Philips Nv Halfgeleiderinrichting.
IT1210953B (it) * 1982-11-19 1989-09-29 Ates Componenti Elettron Metodo per la saldatura di piastrine di semiconduttore su supporti di metallo non nobile.
EP0381411A3 (de) * 1989-02-01 1992-03-11 Plessey Semiconductors Limited Verfahren zum Verbinden von Bauelementen
US5178319A (en) * 1991-04-02 1993-01-12 At&T Bell Laboratories Compression bonding methods
CA2210063A1 (en) * 1997-07-08 1999-01-08 Ibm Canada Limited-Ibm Canada Limitee Method of manufacturing wire segments of homogeneous composition
KR100499722B1 (ko) * 2000-02-29 2005-07-07 오므론 가부시키가이샤 칩형 반도체 소자
SE520148C3 (sv) * 2000-11-24 2003-07-16 Sandvik Ab Förfarande för att öka livslängden hos värmeelement av molybdendisilicidtyp vid värmebehandling av elektroniska keramer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
FR1258010A (fr) * 1959-06-30 1961-04-07 Fairchild Semiconductor Procédé de fabrication de transistors
US3196330A (en) * 1960-06-10 1965-07-20 Gen Electric Semiconductor devices and methods of making same
NL275554A (de) * 1961-04-19 1900-01-01
US3330030A (en) * 1961-09-29 1967-07-11 Texas Instruments Inc Method of making semiconductor devices
FR1396813A (fr) * 1963-05-29 1965-04-23 Siemens Ag Procédé de fabrication d'un dispositif électrique semi-conducteur
US3375143A (en) * 1964-09-29 1968-03-26 Melpar Inc Method of making tunnel diode
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3461462A (en) * 1965-12-02 1969-08-12 United Aircraft Corp Method for bonding silicon semiconductor devices
US3537174A (en) * 1968-10-07 1970-11-03 Gen Electric Process for forming tungsten barrier electrical connection

Also Published As

Publication number Publication date
JPS4839866B1 (de) 1973-11-27
US3665594A (en) 1972-05-30
DE1803489A1 (de) 1970-05-27
FR2020901B1 (de) 1974-02-22
SE341950B (de) 1972-01-17
GB1225088A (de) 1971-03-17
FR2020901A1 (de) 1970-07-17

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Legal Events

Date Code Title Description
PL Patent ceased