CH474201A - Lumineszenzdiode - Google Patents

Lumineszenzdiode

Info

Publication number
CH474201A
CH474201A CH1562067A CH1562067A CH474201A CH 474201 A CH474201 A CH 474201A CH 1562067 A CH1562067 A CH 1562067A CH 1562067 A CH1562067 A CH 1562067A CH 474201 A CH474201 A CH 474201A
Authority
CH
Switzerland
Prior art keywords
light emitting
emitting diode
diode
light
emitting
Prior art date
Application number
CH1562067A
Other languages
English (en)
Inventor
Heinz Dr Henker
Noss Kornelius
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH474201A publication Critical patent/CH474201A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)
CH1562067A 1966-11-09 1967-11-07 Lumineszenzdiode CH474201A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0106907 1966-11-09

Publications (1)

Publication Number Publication Date
CH474201A true CH474201A (de) 1969-06-15

Family

ID=7527729

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1562067A CH474201A (de) 1966-11-09 1967-11-07 Lumineszenzdiode

Country Status (6)

Country Link
AT (1) AT274914B (de)
CH (1) CH474201A (de)
DE (1) DE1539564A1 (de)
GB (1) GB1195547A (de)
NL (1) NL6710636A (de)
SE (1) SE342383B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450560A2 (de) * 1990-04-03 1991-10-09 Sumitomo Electric Industries, Ltd. Optische Vorrichtung

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133171Y1 (de) * 1970-12-26 1976-08-17
JPS4942290A (de) * 1972-03-03 1974-04-20
JPS49149679U (de) * 1973-04-27 1974-12-25
JPS5418906B2 (de) * 1973-05-16 1979-07-11
JPS54774Y2 (de) * 1977-10-20 1979-01-16
US4698730A (en) * 1986-08-01 1987-10-06 Stanley Electric Co., Ltd. Light-emitting diode
DE19924316B4 (de) * 1999-05-27 2010-10-07 Zumtobel Lighting Gmbh Lumineszenzdiode
KR20030086573A (ko) 2001-08-13 2003-11-10 죠스게 나가다 반도체 디바이스 및 그 제조 방법
AU2001277778B2 (en) 2001-08-13 2005-04-07 Sphelar Power Corporation Light-emitting or light-receiving semiconductor module and method of its manufacture
CN1220277C (zh) 2001-10-19 2005-09-21 中田仗祐 发光或感光半导体组件及其制造方法
JP3902210B2 (ja) 2002-05-02 2007-04-04 仗祐 中田 受光又は発光用パネルおよびその製造方法
ATE417364T1 (de) 2002-06-21 2008-12-15 Kyosemi Corp Lichtempfangs- oder lichtemissionseinrichtung und verfahren zu ihrer herstellung
US7387400B2 (en) 2003-04-21 2008-06-17 Kyosemi Corporation Light-emitting device with spherical photoelectric converting element
ATE406607T1 (de) 2003-06-09 2008-09-15 Kyosemi Corp Generatorsystem
EP1677362A4 (de) 2003-10-24 2015-11-11 Sphelar Power Corp Lichtempfangendes oder lichtemittierendes modulares blatt und herstellungsprozess dafür
US7070301B2 (en) * 2003-11-04 2006-07-04 3M Innovative Properties Company Side reflector for illumination using light emitting diode
DE102005033005A1 (de) * 2005-07-14 2007-01-18 Osram Opto Semiconductors Gmbh Optoelektronischer Chip
EP3297044A1 (de) * 2016-09-19 2018-03-21 Nick Shepherd Verbesserter led-strahler, led-chip und verfahren zur herstellung davon

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0450560A2 (de) * 1990-04-03 1991-10-09 Sumitomo Electric Industries, Ltd. Optische Vorrichtung
EP0450560A3 (en) * 1990-04-03 1992-05-20 Sumitomo Electric Industries, Ltd. An optical device
US5175783A (en) * 1990-04-03 1992-12-29 Sumitomo Electric Industries, Ltd. Optical molded device including two lenses and active element integrally

Also Published As

Publication number Publication date
GB1195547A (en) 1970-06-17
DE1539564A1 (de) 1969-12-11
NL6710636A (de) 1968-05-10
SE342383B (de) 1972-01-31
AT274914B (de) 1969-10-10

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Legal Events

Date Code Title Description
PL Patent ceased