CH373903A - Verfahren zum tiegellosen Zonenziehen von Halbleitermaterial - Google Patents

Verfahren zum tiegellosen Zonenziehen von Halbleitermaterial

Info

Publication number
CH373903A
CH373903A CH7213259A CH7213259A CH373903A CH 373903 A CH373903 A CH 373903A CH 7213259 A CH7213259 A CH 7213259A CH 7213259 A CH7213259 A CH 7213259A CH 373903 A CH373903 A CH 373903A
Authority
CH
Switzerland
Prior art keywords
crucible
semiconductor material
free zone
zone pulling
pulling
Prior art date
Application number
CH7213259A
Other languages
English (en)
Inventor
Rummel Theodor Dr Prof
Quast Hans-Friedrich
Wolfgang Dr Keller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH373903A publication Critical patent/CH373903A/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J11/00Recovery or working-up of waste materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/78Preparation processes
    • C08G63/80Solid-state polycondensation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/30Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/02Induction heating
    • H05B6/22Furnaces without an endless core
    • H05B6/30Arrangements for remelting or zone melting
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2367/00Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1004Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008Apparatus with means for measuring, testing, or sensing with responsive control means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • General Induction Heating (AREA)
  • Silicon Compounds (AREA)
CH7213259A 1958-04-22 1959-04-16 Verfahren zum tiegellosen Zonenziehen von Halbleitermaterial CH373903A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES57931A DE1153908B (de) 1958-04-22 1958-04-22 Verfahren und Vorrichtung zum tiegellosen Zonenschmelzen mit Abstandsaenderung der Stabenden

Publications (1)

Publication Number Publication Date
CH373903A true CH373903A (de) 1963-12-15

Family

ID=7492176

Family Applications (1)

Application Number Title Priority Date Filing Date
CH7213259A CH373903A (de) 1958-04-22 1959-04-16 Verfahren zum tiegellosen Zonenziehen von Halbleitermaterial

Country Status (6)

Country Link
US (1) US2913561A (de)
BE (1) BE578011A (de)
CH (1) CH373903A (de)
DE (1) DE1153908B (de)
FR (1) FR1222189A (de)
GB (1) GB900545A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL113496C (de) * 1959-06-12
NL252591A (de) * 1959-08-17
DE1115680B (de) * 1960-06-27 1961-10-26 Hans Laske Verfahren zum Herstellen von sehr duennen Metallformteilen
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil
NL260305A (de) * 1960-01-20
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods
US3136876A (en) * 1960-10-26 1964-06-09 Clevite Corp Indicator and control system
NL274321A (de) * 1961-02-07
DE1222476B (de) * 1961-03-09 1966-08-11 Siemens Ag Verfahren zum Herstellen von langgestreckten, insbesondere dendritischen Halbleiterkoerpern durch Ziehen aus einer Schmelze
NL300759A (de) * 1962-12-07
DE1198324B (de) * 1963-09-06 1965-08-12 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen
NL6411697A (de) * 1963-10-15 1965-04-20
US3428436A (en) * 1963-12-16 1969-02-18 Monsanto Co Methods and apparatus for zone melting
US3321299A (en) * 1964-10-13 1967-05-23 Monsanto Co Apparatus and process for preparing semiconductor rods
GB2146186A (en) * 1983-08-25 1985-04-11 Electroheating Int Apparatus for electrically heating a metallic workpiece

Also Published As

Publication number Publication date
GB900545A (en) 1962-07-04
BE578011A (fr) 1959-08-17
FR1222189A (fr) 1960-06-08
DE1153908B (de) 1963-09-05
US2913561A (en) 1959-11-17

Similar Documents

Publication Publication Date Title
CH440226A (de) Verfahren zum Ziehen von Kristallen aus der Schmelze
CH425738A (de) Verfahren zur Gewinnung von kristallinem Halbleitermaterial
CH373903A (de) Verfahren zum tiegellosen Zonenziehen von Halbleitermaterial
CH416576A (de) Verfahren zum Herstellen von Körpern aus hochgereinigtem Halbleitermaterial
AT243738B (de) Verfahren zur Herstellung von Textilmaterial
CH370996A (de) Verfahren zum Reinigen von festem Material
CH365362A (de) Vorrichtung zum tiegelfreien Zonenziehen von stabförmigem Halbleitermaterial
AT249116B (de) Verfahren zum Ziehen von einkristallinem Halbleitermaterial
CH380384A (de) Einrichtung zum tiegelfreien Zonenschmelzen von lotrecht stehenden Stäben aus Halbleitermaterial
CH389249A (de) Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial
CH426742A (de) Verfahren zum Herstellen von einkristallinem Silizium
CH375527A (de) Vorrichtung zum tiegelfreien Zonenschmelzen
CH386116A (de) Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben aus Silizium
CH416558A (de) Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial
CH364244A (de) Verfahren zur Herstellung von Halbleitereinkristallen
CH367898A (de) Verfahren zum Herstellen von Halbleitervorrichtungen
CH387303A (de) Verfahren zum kontinuierlichen Zonenschmelzen
CH347579A (de) Verfahren zum Herstellen von Halbleiterkristallen mit Zonen unterschiedlicher Dotierung
CH388636A (de) Einrichtung zum tiegelfreien Zonenschmelzen von Halbleiterstäben
CH386702A (de) Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze
CH401634A (de) Verfahren zum formgebenden Bearbeiten von Halbleiterkristallen
CH369830A (de) Verfahren zum Herstellen von stabförmigen Halbleiterkörpern
CH377418A (de) Verfahren zum Herstellen von aus halbleitendem Material bestehenden Schenkeln für Thermoelemente
CH391305A (de) Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial
CH382296A (de) Verfahren zur Herstellung von einkristallinem Halbleitermaterial