CH359790A - Verfahren zur Herstellung einer Zonen verschiedenen Leitfähigkeitstyps aufweisenden Halbleiteranordnung - Google Patents
Verfahren zur Herstellung einer Zonen verschiedenen Leitfähigkeitstyps aufweisenden HalbleiteranordnungInfo
- Publication number
- CH359790A CH359790A CH359790DA CH359790A CH 359790 A CH359790 A CH 359790A CH 359790D A CH359790D A CH 359790DA CH 359790 A CH359790 A CH 359790A
- Authority
- CH
- Switzerland
- Prior art keywords
- zones
- production
- conductivity types
- different conductivity
- semiconductor arrangement
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Electron Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US657355A US2943006A (en) | 1957-05-06 | 1957-05-06 | Diffused transistors and processes for making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
CH359790A true CH359790A (de) | 1962-01-31 |
Family
ID=24636825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH359790D CH359790A (de) | 1957-05-06 | 1958-05-06 | Verfahren zur Herstellung einer Zonen verschiedenen Leitfähigkeitstyps aufweisenden Halbleiteranordnung |
Country Status (5)
Country | Link |
---|---|
US (1) | US2943006A (de) |
CH (1) | CH359790A (de) |
DE (1) | DE1414538A1 (de) |
FR (1) | FR1206714A (de) |
GB (1) | GB865471A (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3007090A (en) * | 1957-09-04 | 1961-10-31 | Ibm | Back resistance control for junction semiconductor devices |
US3065392A (en) * | 1958-02-07 | 1962-11-20 | Rca Corp | Semiconductor devices |
US3154692A (en) * | 1960-01-08 | 1964-10-27 | Clevite Corp | Voltage regulating semiconductor device |
NL263771A (de) * | 1960-04-26 | |||
NL257150A (de) * | 1960-10-22 | 1900-01-01 | ||
DE1175797B (de) * | 1960-12-22 | 1964-08-13 | Standard Elektrik Lorenz Ag | Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen |
US3188244A (en) * | 1961-04-24 | 1965-06-08 | Tektronix Inc | Method of forming pn junction in semiconductor material |
US3258371A (en) * | 1962-02-01 | 1966-06-28 | Semiconductor Res Found | Silicon semiconductor device for high frequency, and method of its manufacture |
US3307088A (en) * | 1962-03-13 | 1967-02-28 | Fujikawa Kyoichi | Silver-lead alloy contacts containing dopants for semiconductors |
US3257589A (en) * | 1962-05-22 | 1966-06-21 | Texas Instruments Inc | Transistors and the fabrication thereof |
US3268375A (en) * | 1962-05-22 | 1966-08-23 | Gordon J Ratcliff | Alloy-diffusion process for fabricating germanium transistors |
CH396228A (de) * | 1962-05-29 | 1965-07-31 | Siemens Ag | Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium |
US3309244A (en) * | 1963-03-22 | 1967-03-14 | Motorola Inc | Alloy-diffused method for producing semiconductor devices |
US3513041A (en) * | 1967-06-19 | 1970-05-19 | Motorola Inc | Fabrication of a germanium diffused base power transistor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1103544A (fr) * | 1953-05-25 | 1955-11-03 | Rca Corp | Dispositifs semi-conducteurs, et procédé de fabrication de ceux-ci |
-
1957
- 1957-05-06 US US657355A patent/US2943006A/en not_active Expired - Lifetime
-
1958
- 1958-05-02 DE DE19581414538 patent/DE1414538A1/de active Pending
- 1958-05-02 GB GB14046/58A patent/GB865471A/en not_active Expired
- 1958-05-05 FR FR1206714D patent/FR1206714A/fr not_active Expired
- 1958-05-06 CH CH359790D patent/CH359790A/de unknown
Also Published As
Publication number | Publication date |
---|---|
GB865471A (en) | 1961-04-19 |
FR1206714A (fr) | 1960-02-11 |
DE1414538A1 (de) | 1968-12-19 |
US2943006A (en) | 1960-06-28 |
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