CH396228A - Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium - Google Patents
Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus SiliziumInfo
- Publication number
- CH396228A CH396228A CH136163A CH136163A CH396228A CH 396228 A CH396228 A CH 396228A CH 136163 A CH136163 A CH 136163A CH 136163 A CH136163 A CH 136163A CH 396228 A CH396228 A CH 396228A
- Authority
- CH
- Switzerland
- Prior art keywords
- silicon
- producing
- semiconductor body
- highly doped
- particular made
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/033—Diffusion of aluminum
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12583—Component contains compound of adjacent metal
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0079661 | 1962-05-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH396228A true CH396228A (de) | 1965-07-31 |
Family
ID=7508354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH136163A CH396228A (de) | 1962-05-29 | 1963-02-04 | Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium |
Country Status (3)
Country | Link |
---|---|
US (1) | US3208889A (de) |
CH (1) | CH396228A (de) |
GB (1) | GB1037187A (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1095047A (en) * | 1964-09-09 | 1967-12-13 | Westinghouse Brake & Signal | Semi-conductor devices and the manufacture thereof |
GB1079469A (en) * | 1965-04-08 | 1967-08-16 | Ates Componenti Elettron | A method of manufacturing p-n alloy junctions |
US3400308A (en) * | 1965-06-22 | 1968-09-03 | Rca Corp | Metallic contacts for semiconductor devices |
US3386867A (en) * | 1965-09-22 | 1968-06-04 | Ibm | Method for providing electrical contacts to a wafer of gaas |
JPS5110948B1 (de) * | 1971-03-25 | 1976-04-07 | ||
US3895975A (en) * | 1973-02-13 | 1975-07-22 | Communications Satellite Corp | Method for the post-alloy diffusion of impurities into a semiconductor |
US3902925A (en) * | 1973-10-30 | 1975-09-02 | Gen Electric | Deep diode device and method |
US3897277A (en) * | 1973-10-30 | 1975-07-29 | Gen Electric | High aspect ratio P-N junctions by the thermal gradient zone melting technique |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE531626A (de) * | 1953-09-04 | |||
US2943006A (en) * | 1957-05-06 | 1960-06-28 | Westinghouse Electric Corp | Diffused transistors and processes for making the same |
US3087100A (en) * | 1959-04-14 | 1963-04-23 | Bell Telephone Labor Inc | Ohmic contacts to semiconductor devices |
-
1963
- 1963-02-04 CH CH136163A patent/CH396228A/de unknown
- 1963-05-22 US US282267A patent/US3208889A/en not_active Expired - Lifetime
- 1963-05-28 GB GB21354/63A patent/GB1037187A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1037187A (en) | 1966-07-27 |
US3208889A (en) | 1965-09-28 |
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