CH335368A - Transistor - Google Patents
TransistorInfo
- Publication number
- CH335368A CH335368A CH335368DA CH335368A CH 335368 A CH335368 A CH 335368A CH 335368D A CH335368D A CH 335368DA CH 335368 A CH335368 A CH 335368A
- Authority
- CH
- Switzerland
- Prior art keywords
- transistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
- C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L27/04—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
- C08L27/06—Homopolymers or copolymers of vinyl chloride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L9/00—Compositions of homopolymers or copolymers of conjugated diene hydrocarbons
- C08L9/02—Copolymers with acrylonitrile
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH5422657 | 1957-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH335368A true CH335368A (fr) | 1958-12-31 |
Family
ID=4519135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH335368D CH335368A (fr) | 1957-12-28 | 1957-12-28 | Transistor |
Country Status (7)
Country | Link |
---|---|
US (1) | US3038087A (fr) |
BE (1) | BE573933A (fr) |
CH (1) | CH335368A (fr) |
DE (1) | DE1132662B (fr) |
FR (1) | FR1256523A (fr) |
GB (1) | GB905945A (fr) |
NL (1) | NL107737C (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1115837B (de) * | 1958-09-04 | 1961-10-26 | Intermetall | Flaechentransistor mit einem plaettchenfoermigen Halbleiterkoerper |
DE1214791B (de) * | 1960-08-12 | 1966-04-21 | Telefunken Patent | Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3177414A (en) * | 1961-07-26 | 1965-04-06 | Nippon Electric Co | Device comprising a plurality of transistors |
US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
US3735481A (en) * | 1967-08-16 | 1973-05-29 | Hitachi Ltd | Method of manufacturing an integrated circuit having a transistor isolated by the collector region |
US3611058A (en) * | 1970-05-11 | 1971-10-05 | Gen Motors Corp | Varactor diode |
JPS6174369A (ja) * | 1984-09-20 | 1986-04-16 | Sony Corp | 半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE489418A (fr) * | 1948-06-26 | |||
NL79529C (fr) * | 1948-09-24 | |||
NL90299C (fr) * | 1950-03-21 | |||
NL83838C (fr) * | 1952-12-01 | 1957-01-15 | ||
US2754431A (en) * | 1953-03-09 | 1956-07-10 | Rca Corp | Semiconductor devices |
US2870345A (en) * | 1954-02-02 | 1959-01-20 | Philips Corp | Amplification control of a transistor |
US2801348A (en) * | 1954-05-03 | 1957-07-30 | Rca Corp | Semiconductor devices |
US2889499A (en) * | 1954-09-27 | 1959-06-02 | Ibm | Bistable semiconductor device |
US2915647A (en) * | 1955-07-13 | 1959-12-01 | Bell Telephone Labor Inc | Semiconductive switch and negative resistance |
US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
-
1957
- 1957-12-28 CH CH335368D patent/CH335368A/fr unknown
-
1958
- 1958-12-16 BE BE573933A patent/BE573933A/fr unknown
- 1958-12-17 GB GB40796/58A patent/GB905945A/en not_active Expired
- 1958-12-18 NL NL234353A patent/NL107737C/xx active
- 1958-12-18 FR FR38930A patent/FR1256523A/fr not_active Expired
- 1958-12-23 DE DES61123A patent/DE1132662B/de active Pending
- 1958-12-24 US US782760A patent/US3038087A/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1115837B (de) * | 1958-09-04 | 1961-10-26 | Intermetall | Flaechentransistor mit einem plaettchenfoermigen Halbleiterkoerper |
DE1214791B (de) * | 1960-08-12 | 1966-04-21 | Telefunken Patent | Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen |
DE1214791C2 (de) * | 1960-08-12 | 1966-11-10 | Telefunken Patent | Flaechentransistor mit Basis- und Emitterzone auf der gleichen Oberflaechenseite desHalbleiterkoerpers und Verfahren zum Herstellen |
Also Published As
Publication number | Publication date |
---|---|
BE573933A (fr) | 1959-04-16 |
FR1256523A (fr) | 1961-03-24 |
DE1132662B (de) | 1962-07-05 |
NL107737C (fr) | 1964-03-16 |
GB905945A (en) | 1962-09-12 |
US3038087A (en) | 1962-06-05 |
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