CH331017A - Method for producing a PN junction in a semiconductor - Google Patents
Method for producing a PN junction in a semiconductorInfo
- Publication number
- CH331017A CH331017A CH331017DA CH331017A CH 331017 A CH331017 A CH 331017A CH 331017D A CH331017D A CH 331017DA CH 331017 A CH331017 A CH 331017A
- Authority
- CH
- Switzerland
- Prior art keywords
- junction
- semiconductor
- producing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB125054A GB753140A (en) | 1953-07-22 | 1953-07-22 | Improvements in or relating to electric semi-conducting devices |
GB2039553A GB753133A (en) | 1953-07-22 | 1953-07-22 | Improvements in or relating to electric semi-conducting devices |
Publications (1)
Publication Number | Publication Date |
---|---|
CH331017A true CH331017A (en) | 1958-06-30 |
Family
ID=26236590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH331017D CH331017A (en) | 1953-07-22 | 1954-07-22 | Method for producing a PN junction in a semiconductor |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE530566A (en) |
CH (1) | CH331017A (en) |
DE (1) | DE1024640B (en) |
GB (1) | GB753140A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3108914A (en) * | 1959-06-30 | 1963-10-29 | Fairchild Camera Instr Co | Transistor manufacturing process |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1207012B (en) * | 1955-12-24 | 1965-12-16 | Telefunken Patent | Semiconductor component with an injecting and a collecting electrode |
NL215949A (en) * | 1956-04-03 | |||
US2964435A (en) * | 1957-03-27 | 1960-12-13 | Mc Graw Edison Co | Semiconductor devices and their manufacture |
DE1243278B (en) * | 1958-03-27 | 1967-06-29 | Siemens Ag | npn or pnp power transistor made of silicon |
US3041226A (en) * | 1958-04-02 | 1962-06-26 | Hughes Aircraft Co | Method of preparing semiconductor crystals |
NL238556A (en) * | 1958-04-24 | |||
NL135875C (en) * | 1958-06-09 | 1900-01-01 | ||
NL229074A (en) * | 1958-06-26 | |||
FR1230933A (en) * | 1958-07-26 | 1960-09-21 | ||
DE1105522B (en) * | 1958-11-12 | 1961-04-27 | Licentia Gmbh | Transistor with a disk-shaped semiconductor body |
US3225416A (en) * | 1958-11-20 | 1965-12-28 | Int Rectifier Corp | Method of making a transistor containing a multiplicity of depressions |
NL135006C (en) * | 1958-12-24 | |||
NL247735A (en) * | 1959-01-28 | |||
US2937114A (en) * | 1959-05-29 | 1960-05-17 | Shockley Transistor Corp | Semiconductive device and method |
US3041214A (en) * | 1959-09-25 | 1962-06-26 | Clevite Corp | Method of forming junction semiconductive devices having thin layers |
DE1133038B (en) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Semiconductor component with an essentially single-crystal semiconductor body and four zones of alternating conductivity type |
DE1166379B (en) * | 1961-05-12 | 1964-03-26 | Raytheon Co | High frequency transistor and process for its manufacture |
DE1208409B (en) * | 1961-05-19 | 1966-01-05 | Int Standard Electric Corp | Electrical semiconductor component with pn junction and method for manufacturing |
DE1237694B (en) * | 1961-08-10 | 1967-03-30 | Siemens Ag | Process for alloying electrical semiconductor components |
DE1225304B (en) * | 1961-11-16 | 1966-09-22 | Telefunken Patent | Diffusion process for manufacturing a semiconductor component |
DE1280421B (en) * | 1965-08-23 | 1968-10-17 | Halbleiterwerk Frankfurt Oder | Method for reducing sheet resistances in semiconductor devices |
CH426020A (en) * | 1965-09-08 | 1966-12-15 | Bbc Brown Boveri & Cie | Method for producing the semiconductor element of a surge voltage-resistant semiconductor valve, as well as a semiconductor element produced with the aid of this method |
DE1281037B (en) * | 1965-09-18 | 1968-10-24 | Telefunken Patent | Method of manufacturing a transistor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
-
0
- BE BE530566D patent/BE530566A/xx unknown
-
1953
- 1953-07-22 GB GB125054A patent/GB753140A/en not_active Expired
-
1954
- 1954-07-21 DE DE1954I0008930 patent/DE1024640B/en active Pending
- 1954-07-22 CH CH331017D patent/CH331017A/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3108914A (en) * | 1959-06-30 | 1963-10-29 | Fairchild Camera Instr Co | Transistor manufacturing process |
Also Published As
Publication number | Publication date |
---|---|
DE1024640B (en) | 1958-02-20 |
BE530566A (en) | |
GB753140A (en) | 1956-07-18 |
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