CA933671A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- CA933671A CA933671A CA129348A CA129348A CA933671A CA 933671 A CA933671 A CA 933671A CA 129348 A CA129348 A CA 129348A CA 129348 A CA129348 A CA 129348A CA 933671 A CA933671 A CA 933671A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3512271 | 1971-07-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA933671A true CA933671A (en) | 1973-09-11 |
Family
ID=10374091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA129348A Expired CA933671A (en) | 1971-07-27 | 1971-12-06 | Semiconductor device |
Country Status (11)
Country | Link |
---|---|
US (1) | US3969744A (fr) |
JP (1) | JPS5121750B1 (fr) |
BE (1) | BE776319A (fr) |
CA (1) | CA933671A (fr) |
CH (1) | CH544410A (fr) |
DE (1) | DE2160462C2 (fr) |
FR (1) | FR2147016B1 (fr) |
GB (1) | GB1345818A (fr) |
IT (1) | IT943189B (fr) |
NL (1) | NL161922C (fr) |
SE (1) | SE377862B (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4053925A (en) * | 1975-08-07 | 1977-10-11 | Ibm Corporation | Method and structure for controllng carrier lifetime in semiconductor devices |
DE2537559C3 (de) * | 1975-08-22 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung mit einem Junction-Feldeffekttransistor und einem komplementären MIS-Feldeffekttransistor |
US4080718A (en) * | 1976-12-14 | 1978-03-28 | Smc Standard Microsystems Corporation | Method of modifying electrical characteristics of MOS devices using ion implantation |
US4257826A (en) * | 1979-10-11 | 1981-03-24 | Texas Instruments Incorporated | Photoresist masking in manufacture of semiconductor device |
JPS5812493A (ja) * | 1981-07-14 | 1983-01-24 | Matsushita Electric Ind Co Ltd | カラ−テレビジヨンカメラ |
US4391651A (en) * | 1981-10-15 | 1983-07-05 | The United States Of America As Represented By The Secretary Of The Navy | Method of forming a hyperabrupt interface in a GaAs substrate |
JPS5869124A (ja) * | 1981-10-20 | 1983-04-25 | Toshiba Corp | 半導体集積回路 |
US4656493A (en) * | 1982-05-10 | 1987-04-07 | General Electric Company | Bidirectional, high-speed power MOSFET devices with deep level recombination centers in base region |
JPH0612823B2 (ja) * | 1982-05-10 | 1994-02-16 | ゼネラル・エレクトリック・カンパニイ | 二方向性の電力用高速mosfet素子 |
DE3605516A1 (de) * | 1985-02-21 | 1986-09-04 | Canon K.K., Tokio/Tokyo | Optisches funktionselement sowie optische funktionsvorrichtung |
US5250445A (en) * | 1988-12-20 | 1993-10-05 | Texas Instruments Incorporated | Discretionary gettering of semiconductor circuits |
JPH0526226A (ja) * | 1991-07-23 | 1993-02-02 | Nissan Motor Co Ltd | 軸方向移動型ピロボールブツシユ |
JPH05275692A (ja) * | 1992-03-25 | 1993-10-22 | Sony Corp | 半導体装置およびその製造方法 |
JP3541958B2 (ja) * | 1993-12-16 | 2004-07-14 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6455903B1 (en) * | 2000-01-26 | 2002-09-24 | Advanced Micro Devices, Inc. | Dual threshold voltage MOSFET by local confinement of channel depletion layer using inert ion implantation |
DE10261307B4 (de) * | 2002-12-27 | 2010-11-11 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung einer Spannungsoberflächenschicht in einem Halbleiterelement |
US20080180160A1 (en) * | 2007-01-31 | 2008-07-31 | Infineon Technologies Ag | High voltage dual gate cmos switching device and method |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3341754A (en) * | 1966-01-20 | 1967-09-12 | Ion Physics Corp | Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method |
US3540925A (en) * | 1967-08-02 | 1970-11-17 | Rca Corp | Ion bombardment of insulated gate semiconductor devices |
US3515956A (en) * | 1967-10-16 | 1970-06-02 | Ion Physics Corp | High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions |
GB1261723A (en) * | 1968-03-11 | 1972-01-26 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
JPS5211199B1 (fr) * | 1970-05-27 | 1977-03-29 | ||
JPS4831036A (fr) * | 1971-08-26 | 1973-04-24 |
-
1971
- 1971-07-27 GB GB3512271A patent/GB1345818A/en not_active Expired
- 1971-12-04 NL NL7116693.A patent/NL161922C/xx active
- 1971-12-06 CA CA129348A patent/CA933671A/en not_active Expired
- 1971-12-06 CH CH1773771A patent/CH544410A/de not_active IP Right Cessation
- 1971-12-06 DE DE2160462A patent/DE2160462C2/de not_active Expired
- 1971-12-06 BE BE776319A patent/BE776319A/fr unknown
- 1971-12-06 SE SE7115630A patent/SE377862B/xx unknown
- 1971-12-06 IT IT71005/71A patent/IT943189B/it active
- 1971-12-09 FR FR7144223A patent/FR2147016B1/fr not_active Expired
- 1971-12-09 JP JP46099145A patent/JPS5121750B1/ja active Pending
- 1971-12-13 US US05/207,138 patent/US3969744A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
NL161922C (nl) | 1980-03-17 |
US3969744A (en) | 1976-07-13 |
BE776319A (fr) | 1972-06-06 |
FR2147016A1 (fr) | 1973-03-09 |
DE2160462C2 (de) | 1982-05-13 |
DE2160462A1 (de) | 1973-02-08 |
FR2147016B1 (fr) | 1976-06-04 |
CH544410A (de) | 1973-11-15 |
GB1345818A (en) | 1974-02-06 |
NL161922B (nl) | 1979-10-15 |
SE377862B (fr) | 1975-07-28 |
IT943189B (it) | 1973-04-02 |
AU3637771A (en) | 1973-06-07 |
NL7116693A (fr) | 1973-01-30 |
JPS5121750B1 (fr) | 1976-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA956731A (en) | Semi-conductor device | |
CA933671A (en) | Semiconductor device | |
AU473052B2 (en) | Semiconductor device | |
CA961173A (en) | Semiconductor device package | |
CA963174A (en) | Semiconductor device | |
AU4164272A (en) | Monolithic semiconductor device | |
CA1000404A (en) | Semiconductor memory device | |
AU463708B2 (en) | Semiconductor device | |
AU474165B2 (en) | Semiconductor device | |
AU450782B2 (en) | Semiconductor control device | |
AU465323B2 (en) | Semi-conductor devices | |
CA870847A (en) | Semiconductor device | |
CA869748A (en) | Semiconductor device | |
CA876989A (en) | Semiconductor device | |
CA888441A (en) | Semiconductor device | |
CA881781A (en) | Semiconductor device | |
CA881778A (en) | Semiconductor device | |
CA888437A (en) | Semiconductor device | |
CA861148A (en) | Semiconductor device | |
CA881188A (en) | Semiconductor device | |
CA861744A (en) | Semiconductor device | |
CA878787A (en) | Semiconductor device | |
CA863535A (en) | Semiconductor device | |
CA866990A (en) | Semiconductor device | |
CA874134A (en) | Semiconductor device |