CA2171781C - Semiconductor lasers comprising rare earth metal-doped diamond - Google Patents
Semiconductor lasers comprising rare earth metal-doped diamond Download PDFInfo
- Publication number
- CA2171781C CA2171781C CA002171781A CA2171781A CA2171781C CA 2171781 C CA2171781 C CA 2171781C CA 002171781 A CA002171781 A CA 002171781A CA 2171781 A CA2171781 A CA 2171781A CA 2171781 C CA2171781 C CA 2171781C
- Authority
- CA
- Canada
- Prior art keywords
- doped
- diamond
- laser device
- semiconductor laser
- ppm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1628—Solid materials characterised by a semiconducting matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP059202/1995 | 1995-03-17 | ||
JP05920295A JP3584450B2 (ja) | 1995-03-17 | 1995-03-17 | レーザー発振素子及びレーザー発振装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2171781A1 CA2171781A1 (en) | 1996-09-18 |
CA2171781C true CA2171781C (en) | 2005-05-17 |
Family
ID=13106609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002171781A Expired - Fee Related CA2171781C (en) | 1995-03-17 | 1996-03-14 | Semiconductor lasers comprising rare earth metal-doped diamond |
Country Status (5)
Country | Link |
---|---|
US (1) | US5812573A (ja) |
EP (1) | EP0732784B1 (ja) |
JP (1) | JP3584450B2 (ja) |
CA (1) | CA2171781C (ja) |
DE (1) | DE69600384T2 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6140669A (en) | 1999-02-20 | 2000-10-31 | Ohio University | Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission |
JP3138705B1 (ja) * | 1999-08-31 | 2001-02-26 | 工業技術院長 | ダイヤモンドpn接合ダイオードおよびその作製方法 |
JP2003014992A (ja) * | 2001-07-02 | 2003-01-15 | Matsushita Electric Ind Co Ltd | 半導体レーザモジュールおよび光伝送システム |
JP2003051609A (ja) * | 2001-08-03 | 2003-02-21 | Tokyo Gas Co Ltd | ダイヤモンド高輝度紫外線発光素子 |
US7224532B2 (en) * | 2002-12-06 | 2007-05-29 | Chevron U.S.A. Inc. | Optical uses diamondoid-containing materials |
US20050019955A1 (en) * | 2003-07-23 | 2005-01-27 | Dahl Jeremy E. | Luminescent heterodiamondoids as biological labels |
KR100644929B1 (ko) * | 2004-03-04 | 2006-11-13 | 한국원자력연구소 | 이온주입과 열처리에 의한 발색된 다이아몬드의 제조방법 |
JP5514552B2 (ja) * | 2007-01-29 | 2014-06-04 | カーネギー インスチチューション オブ ワシントン | 単結晶cvdダイヤモンドの新規なレーザー用途 |
US7660335B2 (en) * | 2008-04-17 | 2010-02-09 | Lasertel, Inc. | Liquid cooled laser bar arrays incorporating diamond/copper expansion matched materials |
JP5614165B2 (ja) * | 2010-08-17 | 2014-10-29 | 住友電気工業株式会社 | ダイヤモンド |
US20170037540A1 (en) * | 2015-08-07 | 2017-02-09 | North Carolina State University | Conversion of boron nitride into n-type and p-type doped cubic boron nitride and structures |
JP2018538569A (ja) * | 2015-11-18 | 2018-12-27 | マッコーリー ユニバーシティー | 高パワーラマンレーザシステム及び方法 |
US10240251B2 (en) | 2016-06-28 | 2019-03-26 | North Carolina State University | Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications |
US11025031B2 (en) | 2016-11-29 | 2021-06-01 | Leonardo Electronics Us Inc. | Dual junction fiber-coupled laser diode and related methods |
CN107988584B (zh) * | 2017-12-20 | 2023-04-11 | 深圳先进技术研究院 | 一种具有金刚石薄膜的硬质合金及其制备方法和应用 |
WO2020036998A1 (en) | 2018-08-13 | 2020-02-20 | Lasertel, Inc. | Use of metal-core printed circuit board (pcb) for generation of ultra-narrow, high-current pulse driver |
DE102019121924A1 (de) | 2018-08-14 | 2020-02-20 | Lasertel, Inc. | Laserbaugruppe und zugehörige verfahren |
US11296481B2 (en) | 2019-01-09 | 2022-04-05 | Leonardo Electronics Us Inc. | Divergence reshaping array |
US11752571B1 (en) | 2019-06-07 | 2023-09-12 | Leonardo Electronics Us Inc. | Coherent beam coupler |
US11600963B2 (en) | 2020-04-22 | 2023-03-07 | The Boeing Company | Diamond-based high-stability optical devices for precision frequency and time generation |
CN111593316B (zh) * | 2020-05-11 | 2022-06-21 | 南京岱蒙特科技有限公司 | 一种高比表面积超亲水的梯度硼掺杂金刚石电极及其制备方法和应用 |
CN114941132A (zh) * | 2022-05-27 | 2022-08-26 | 邵阳市东昇超硬材料有限公司 | 一种增强型金刚石材料 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4638484A (en) * | 1984-11-20 | 1987-01-20 | Hughes Aircraft Company | Solid state laser employing diamond having color centers as a laser active material |
JPS6474783A (en) * | 1987-09-17 | 1989-03-20 | Fujitsu Ltd | Semiconductor light-emitting device |
JP2661307B2 (ja) * | 1990-01-31 | 1997-10-08 | 日本電気株式会社 | 半導体レーザ |
JP2730271B2 (ja) * | 1990-03-07 | 1998-03-25 | 住友電気工業株式会社 | 半導体装置 |
JPH04333291A (ja) * | 1991-05-09 | 1992-11-20 | Agency Of Ind Science & Technol | ダブルヘテロ接合構造及び半導体レーザー素子 |
US5381755A (en) * | 1991-08-20 | 1995-01-17 | The United States Of America As Represented By The Secretary Of The Navy | Method of synthesizing high quality, doped diamond and diamonds and devices obtained therefrom |
JPH05291655A (ja) * | 1992-04-07 | 1993-11-05 | Oki Electric Ind Co Ltd | プレーナ光導波路形レーザ素子及びレーザ装置 |
JP3462514B2 (ja) * | 1992-09-16 | 2003-11-05 | 住友電気工業株式会社 | 固体レーザ |
JP2541090B2 (ja) * | 1993-01-13 | 1996-10-09 | 日本電気株式会社 | レ―ザ発振装置 |
US5434876A (en) * | 1992-10-23 | 1995-07-18 | At&T Bell Laboratories | Article comprising an optical waveguide laser |
JPH06219776A (ja) * | 1993-01-28 | 1994-08-09 | Hoya Corp | Ybを増感剤とするErドープレーザーガラス |
US5504767A (en) * | 1995-03-17 | 1996-04-02 | Si Diamond Technology, Inc. | Doped diamond laser |
-
1995
- 1995-03-17 JP JP05920295A patent/JP3584450B2/ja not_active Expired - Fee Related
-
1996
- 1996-03-13 DE DE69600384T patent/DE69600384T2/de not_active Expired - Lifetime
- 1996-03-13 EP EP96103987A patent/EP0732784B1/en not_active Expired - Lifetime
- 1996-03-14 CA CA002171781A patent/CA2171781C/en not_active Expired - Fee Related
- 1996-03-15 US US08/616,552 patent/US5812573A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5812573A (en) | 1998-09-22 |
JP3584450B2 (ja) | 2004-11-04 |
EP0732784A1 (en) | 1996-09-18 |
JPH08255946A (ja) | 1996-10-01 |
CA2171781A1 (en) | 1996-09-18 |
EP0732784B1 (en) | 1998-07-01 |
DE69600384D1 (de) | 1998-08-06 |
DE69600384T2 (de) | 1999-01-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |