BRPI1006965A2 - selenização de camada precursora contendo nanopartículas de cuins2 - Google Patents
selenização de camada precursora contendo nanopartículas de cuins2Info
- Publication number
- BRPI1006965A2 BRPI1006965A2 BRPI1006965A BRPI1006965A BRPI1006965A2 BR PI1006965 A2 BRPI1006965 A2 BR PI1006965A2 BR PI1006965 A BRPI1006965 A BR PI1006965A BR PI1006965 A BRPI1006965 A BR PI1006965A BR PI1006965 A2 BRPI1006965 A2 BR PI1006965A2
- Authority
- BR
- Brazil
- Prior art keywords
- selenization
- layer containing
- precursor layer
- cuins2
- nanoparticles
- Prior art date
Links
- 239000002105 nanoparticle Substances 0.000 title 1
- 239000002243 precursor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14608409P | 2009-01-21 | 2009-01-21 | |
PCT/US2010/021636 WO2010085553A1 (en) | 2009-01-21 | 2010-01-21 | Selenization of precursor layer containing culns2 nanoparticles |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI1006965A2 true BRPI1006965A2 (pt) | 2016-04-12 |
Family
ID=42356199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI1006965A BRPI1006965A2 (pt) | 2009-01-21 | 2010-01-21 | selenização de camada precursora contendo nanopartículas de cuins2 |
Country Status (10)
Country | Link |
---|---|
US (1) | US8722447B2 (pt) |
EP (1) | EP2379458A4 (pt) |
JP (1) | JP2012515708A (pt) |
KR (1) | KR20110108388A (pt) |
CN (1) | CN102361830A (pt) |
AU (1) | AU2010206814A1 (pt) |
BR (1) | BRPI1006965A2 (pt) |
CL (1) | CL2011001756A1 (pt) |
CO (1) | CO6400212A2 (pt) |
WO (1) | WO2010085553A1 (pt) |
Families Citing this family (19)
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JP5782672B2 (ja) * | 2009-11-06 | 2015-09-24 | 凸版印刷株式会社 | 化合物半導体薄膜作製用インク、そのインクを用いて得た化合物半導体薄膜、その化合物半導体薄膜を備える太陽電池、及びその太陽電池の製造方法 |
JP2012114250A (ja) * | 2010-11-25 | 2012-06-14 | Kyocera Corp | 光電変換装置の製造方法 |
JP2012114251A (ja) * | 2010-11-25 | 2012-06-14 | Kyocera Corp | 光電変換装置の製造方法 |
KR101172050B1 (ko) | 2011-02-11 | 2012-08-07 | 재단법인대구경북과학기술원 | 박막 태양전지의 흡수층 제조방법 |
KR101229310B1 (ko) | 2011-02-14 | 2013-02-04 | 재단법인대구경북과학기술원 | 박막태양전지의 광흡수층 제조방법 |
KR20120131535A (ko) * | 2011-05-25 | 2012-12-05 | 한국에너지기술연구원 | CIGS/CIS 나노입자의 셀렌화에 의한 치밀한 CIGSe/CISe 박막 제조방법 |
WO2012163976A1 (en) * | 2011-06-03 | 2012-12-06 | Bayer Intellectual Property Gmbh | Continuous process for the synthesis of ternary or quaternary semiconducting nanoparticles based on ib, iiia, via elements of the periodic classification |
US8916457B2 (en) * | 2012-05-22 | 2014-12-23 | King Abdullah University Of Science And Technology | In situ synthesis of nanoparticles on substrates by inkjet printing |
US8859323B2 (en) * | 2012-07-31 | 2014-10-14 | Intermolecular, Inc. | Method of chalcogenization to form high quality cigs for solar cell applications |
KR101389832B1 (ko) * | 2012-11-09 | 2014-04-30 | 한국과학기술연구원 | 구리인듐셀레늄(cigs) 또는 구리아연주석황(czts)계 박막형 태양전지 및 그의 제조방법 |
CN103911148B (zh) * | 2013-01-07 | 2016-11-16 | 中国药科大学 | 基于壳聚糖的氨基化碳氮量子点的制备方法 |
CN105190836B (zh) * | 2013-03-04 | 2021-01-22 | 纳米技术有限公司 | 用于薄膜太阳能电池的铜-铟-镓-硫属化物纳米粒子前体 |
WO2014140897A2 (en) * | 2013-03-15 | 2014-09-18 | Nanoco Technologies, Ltd. | Pv device with graded grain size and s:se ratio |
US9105798B2 (en) | 2013-05-14 | 2015-08-11 | Sun Harmonics, Ltd | Preparation of CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks |
CN103325886B (zh) * | 2013-06-09 | 2017-07-18 | 徐东 | 一种具有能带梯度分布的铜铟铝硒(cias)薄膜的制备方法 |
JP2015020932A (ja) * | 2013-07-19 | 2015-02-02 | 株式会社太陽電池総合研究所 | カルコパイライトナノ粒子の製造方法 |
US9960314B2 (en) * | 2013-09-13 | 2018-05-01 | Nanoco Technologies Ltd. | Inorganic salt-nanoparticle ink for thin film photovoltaic devices and related methods |
US9893220B2 (en) * | 2013-10-15 | 2018-02-13 | Nanoco Technologies Ltd. | CIGS nanoparticle ink formulation having a high crack-free limit |
CN103881709B (zh) * | 2014-04-10 | 2016-06-08 | 石家庄铁道大学 | 一种多级孔TiO2/量子点复合材料的制备方法 |
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JP3064701B2 (ja) * | 1992-10-30 | 2000-07-12 | 松下電器産業株式会社 | カルコパイライト型化合物薄膜の製造方法 |
JP3244408B2 (ja) | 1995-09-13 | 2002-01-07 | 松下電器産業株式会社 | 薄膜太陽電池及びその製造方法 |
EP0837511B1 (en) * | 1996-10-15 | 2005-09-14 | Matsushita Electric Industrial Co., Ltd | Solar cell and method for manufacturing the same |
US5985691A (en) | 1997-05-16 | 1999-11-16 | International Solar Electric Technology, Inc. | Method of making compound semiconductor films and making related electronic devices |
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WO2001037324A1 (en) | 1999-11-16 | 2001-05-25 | Midwest Research Institute | A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2? |
JP2002329877A (ja) | 2001-04-27 | 2002-11-15 | National Institute Of Advanced Industrial & Technology | Cu(Ga及び(又は)In)Se2薄膜層、Cu(InGa)(S、Se)2薄膜層、太陽電池、Cu(Ga及び(又は)In)Se2薄膜層の形成方法 |
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WO2006101986A2 (en) * | 2005-03-16 | 2006-09-28 | Nanosolar, Inc. | Mettalic dispersion and formation of compound film for photovoltaic device active layer |
US20070111367A1 (en) * | 2005-10-19 | 2007-05-17 | Basol Bulent M | Method and apparatus for converting precursor layers into photovoltaic absorbers |
EP1997150A2 (en) * | 2006-02-23 | 2008-12-03 | Van Duren, Jeroen K.J. | High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles |
JP5054326B2 (ja) * | 2006-05-01 | 2012-10-24 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池モジュールの改良された耐久性試験方法 |
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KR101497633B1 (ko) * | 2007-04-18 | 2015-03-03 | 나노코 테크놀로지스 리미티드 | 멀티층을 기본으로 전기적인 활성 박막을 제조 |
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CN101878535B (zh) | 2007-11-30 | 2014-03-05 | 纳米技术有限公司 | 纳米粒子材料的制备 |
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US20090260670A1 (en) * | 2008-04-18 | 2009-10-22 | Xiao-Chang Charles Li | Precursor ink for producing IB-IIIA-VIA semiconductors |
-
2010
- 2010-01-21 BR BRPI1006965A patent/BRPI1006965A2/pt not_active IP Right Cessation
- 2010-01-21 EP EP10733847.7A patent/EP2379458A4/en not_active Withdrawn
- 2010-01-21 KR KR1020117018489A patent/KR20110108388A/ko not_active Application Discontinuation
- 2010-01-21 WO PCT/US2010/021636 patent/WO2010085553A1/en active Application Filing
- 2010-01-21 AU AU2010206814A patent/AU2010206814A1/en not_active Abandoned
- 2010-01-21 JP JP2011548099A patent/JP2012515708A/ja active Pending
- 2010-01-21 US US13/145,016 patent/US8722447B2/en not_active Expired - Fee Related
- 2010-01-21 CN CN2010800128715A patent/CN102361830A/zh active Pending
-
2011
- 2011-07-20 CL CL2011001756A patent/CL2011001756A1/es unknown
- 2011-07-28 CO CO11095143A patent/CO6400212A2/es not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20110108388A (ko) | 2011-10-05 |
CO6400212A2 (es) | 2012-03-15 |
CL2011001756A1 (es) | 2012-02-10 |
US20120122268A1 (en) | 2012-05-17 |
EP2379458A4 (en) | 2015-02-11 |
EP2379458A1 (en) | 2011-10-26 |
WO2010085553A1 (en) | 2010-07-29 |
CN102361830A (zh) | 2012-02-22 |
AU2010206814A1 (en) | 2011-08-11 |
US8722447B2 (en) | 2014-05-13 |
JP2012515708A (ja) | 2012-07-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B08F | Application fees: application dismissed [chapter 8.6 patent gazette] |
Free format text: REFERENTE A 6A ANUIDADE. |
|
B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2384 DE 13-09-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |