BRPI0809982A2 - Métodos de projeto e memória de acesso aleatório magnetorresistiva de transferência de torque por meio de spin. - Google Patents

Métodos de projeto e memória de acesso aleatório magnetorresistiva de transferência de torque por meio de spin.

Info

Publication number
BRPI0809982A2
BRPI0809982A2 BRPI0809982-0A2A BRPI0809982A BRPI0809982A2 BR PI0809982 A2 BRPI0809982 A2 BR PI0809982A2 BR PI0809982 A BRPI0809982 A BR PI0809982A BR PI0809982 A2 BRPI0809982 A2 BR PI0809982A2
Authority
BR
Brazil
Prior art keywords
random access
access memory
spin
magnetorresistory
torque transfer
Prior art date
Application number
BRPI0809982-0A2A
Other languages
English (en)
Inventor
Seong-Ook Jung
Mehdi Hamidi Sani
Seung H Kang
Sci Seung Yoon
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of BRPI0809982A2 publication Critical patent/BRPI0809982A2/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Position Input By Displaying (AREA)
  • User Interface Of Digital Computer (AREA)
BRPI0809982-0A2A 2007-04-05 2008-04-07 Métodos de projeto e memória de acesso aleatório magnetorresistiva de transferência de torque por meio de spin. BRPI0809982A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US91025507P 2007-04-05 2007-04-05
US11/972,674 US7764537B2 (en) 2007-04-05 2008-01-11 Spin transfer torque magnetoresistive random access memory and design methods
PCT/US2008/059600 WO2008124704A1 (en) 2007-04-05 2008-04-07 Spin transfer torque magnetoresistive random access memory and design methods

Publications (1)

Publication Number Publication Date
BRPI0809982A2 true BRPI0809982A2 (pt) 2014-10-14

Family

ID=39826754

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0809982-0A2A BRPI0809982A2 (pt) 2007-04-05 2008-04-07 Métodos de projeto e memória de acesso aleatório magnetorresistiva de transferência de torque por meio de spin.

Country Status (12)

Country Link
US (1) US7764537B2 (pt)
EP (1) EP2137734B1 (pt)
JP (1) JP5231528B2 (pt)
KR (1) KR101093825B1 (pt)
CN (1) CN101657859B (pt)
AT (1) ATE534997T1 (pt)
BR (1) BRPI0809982A2 (pt)
CA (1) CA2680752C (pt)
ES (1) ES2375424T3 (pt)
MX (1) MX2009010756A (pt)
RU (1) RU2427045C2 (pt)
WO (1) WO2008124704A1 (pt)

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US8063459B2 (en) 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US8018011B2 (en) 2007-02-12 2011-09-13 Avalanche Technology, Inc. Low cost multi-state magnetic memory
US20090218645A1 (en) * 2007-02-12 2009-09-03 Yadav Technology Inc. multi-state spin-torque transfer magnetic random access memory
KR101493868B1 (ko) * 2008-07-10 2015-02-17 삼성전자주식회사 자기 메모리 소자의 구동 방법
US8295082B2 (en) * 2008-08-15 2012-10-23 Qualcomm Incorporated Gate level reconfigurable magnetic logic
US7881098B2 (en) 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
US7894248B2 (en) 2008-09-12 2011-02-22 Grandis Inc. Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)
US7826255B2 (en) * 2008-09-15 2010-11-02 Seagate Technology Llc Variable write and read methods for resistive random access memory
US7859891B2 (en) * 2008-09-30 2010-12-28 Seagate Technology Llc Static source plane in stram
US8169810B2 (en) 2008-10-08 2012-05-01 Seagate Technology Llc Magnetic memory with asymmetric energy barrier
US7852660B2 (en) * 2008-10-08 2010-12-14 Seagate Technology Llc Enhancing read and write sense margins in a resistive sense element
US8089132B2 (en) * 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
US7855923B2 (en) * 2008-10-31 2010-12-21 Seagate Technology Llc Write current compensation using word line boosting circuitry
US8045366B2 (en) 2008-11-05 2011-10-25 Seagate Technology Llc STRAM with composite free magnetic element
US8134856B2 (en) * 2008-11-05 2012-03-13 Qualcomm Incorporated Data protection scheme during power-up in spin transfer torque magnetoresistive random access memory
US7876604B2 (en) * 2008-11-05 2011-01-25 Seagate Technology Llc Stram with self-reference read scheme
US7826259B2 (en) 2009-01-29 2010-11-02 Seagate Technology Llc Staggered STRAM cell
US8027206B2 (en) 2009-01-30 2011-09-27 Qualcomm Incorporated Bit line voltage control in spin transfer torque magnetoresistive random access memory
JP2010212661A (ja) * 2009-02-13 2010-09-24 Fujitsu Ltd 磁気ランダムアクセスメモリ
US8587993B2 (en) * 2009-03-02 2013-11-19 Qualcomm Incorporated Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM)
US8238145B2 (en) * 2009-04-08 2012-08-07 Avalanche Technology, Inc. Shared transistor in a spin-torque transfer magnetic random access memory (STTMRAM) cell
US7957183B2 (en) * 2009-05-04 2011-06-07 Magic Technologies, Inc. Single bit line SMT MRAM array architecture and the programming method
KR101083302B1 (ko) * 2009-05-13 2011-11-15 주식회사 하이닉스반도체 반도체 메모리 장치
US8107285B2 (en) 2010-01-08 2012-01-31 International Business Machines Corporation Read direction for spin-torque based memory device
US9196341B2 (en) 2010-05-12 2015-11-24 Qualcomm Incorporated Memory device having a local current sink
US9042163B2 (en) * 2010-05-12 2015-05-26 Qualcomm Incorporated Memory device having a local current sink
US9666639B2 (en) 2010-09-17 2017-05-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8310868B2 (en) * 2010-09-17 2012-11-13 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8557610B2 (en) 2011-02-14 2013-10-15 Qualcomm Incorporated Methods of integrated shielding into MTJ device for MRAM
US8638596B2 (en) 2011-07-25 2014-01-28 Qualcomm Incorporated Non-volatile memory saving cell information in a non-volatile memory array
US9378792B2 (en) 2011-12-15 2016-06-28 Everspin Technologies, Inc. Method of writing to a spin torque magnetic random access memory
CN102569643B (zh) * 2011-12-28 2013-12-11 西安交通大学 一种优化嵌入式stt-ram性能与硬件耗费的异构设计方法
US8923041B2 (en) 2012-04-11 2014-12-30 Everspin Technologies, Inc. Self-referenced sense amplifier for spin torque MRAM
RU2515461C2 (ru) * 2012-07-31 2014-05-10 Федеральное государственное унитарное предприятие федеральный научно-производственный центр "Научно-исследовательский институт измерительных систем им. Ю.Е. Седакова" ИНТЕГРИРОВАННАЯ В СБИС ТЕХНОЛОГИИ КМОП/КНИ С n+ - И p+ - ПОЛИКРЕМНИЕВЫМИ ЗАТВОРАМИ МАТРИЦА ПАМЯТИ MRAM С МАГНИТОРЕЗИСТИВНЫМИ УСТРОЙСТВАМИ С ПЕРЕДАЧЕЙ СПИНОВОГО ВРАЩЕНИЯ
US9245610B2 (en) 2012-09-13 2016-01-26 Qualcomm Incorporated OTP cell with reversed MTJ connection
US8954759B2 (en) * 2012-09-14 2015-02-10 Avalanche Technology, Inc. Secure spin torque transfer magnetic random access memory (STTMRAM)
US8988109B2 (en) * 2012-11-16 2015-03-24 Intel Corporation High speed precessionally switched magnetic logic
KR102028086B1 (ko) * 2013-03-04 2019-10-04 삼성전자주식회사 메모리소자 및 이를 포함하는 장치
CN203982152U (zh) * 2013-06-07 2014-12-03 费希尔控制国际公司 用于过程控制***中的长范围rfid通信的装置
KR102274368B1 (ko) * 2013-09-20 2021-07-06 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 기억 회로
US9142762B1 (en) 2014-03-28 2015-09-22 Qualcomm Incorporated Magnetic tunnel junction and method for fabricating a magnetic tunnel junction
US9595311B2 (en) 2014-08-13 2017-03-14 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US9721634B2 (en) * 2015-04-27 2017-08-01 Qualcomm Incorporated Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance
JP2017037691A (ja) 2015-08-10 2017-02-16 株式会社東芝 不揮発性半導体メモリ
CN107103358A (zh) * 2017-03-24 2017-08-29 中国科学院计算技术研究所 基于自旋转移力矩磁存储器的神经网络处理方法及***
US10431278B2 (en) * 2017-08-14 2019-10-01 Qualcomm Incorporated Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature
CN110675901B (zh) * 2019-09-10 2021-10-01 北京航空航天大学 自旋随机存储器及方法

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US6269018B1 (en) * 2000-04-13 2001-07-31 International Business Machines Corporation Magnetic random access memory using current through MTJ write mechanism
US6809900B2 (en) * 2001-01-25 2004-10-26 Seagate Technology Llc Write head with magnetization controlled by spin-polarized electron current
US6798623B2 (en) * 2001-02-08 2004-09-28 Seagate Technology Llc Biased CPP sensor using spin-momentum transfer
US6744086B2 (en) * 2001-05-15 2004-06-01 Nve Corporation Current switched magnetoresistive memory cell
FR2829868A1 (fr) * 2001-09-20 2003-03-21 Centre Nat Rech Scient Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture
US6819583B2 (en) * 2003-01-15 2004-11-16 Sharp Laboratories Of America, Inc. Ferroelectric resistor non-volatile memory array
JP4113493B2 (ja) * 2003-06-12 2008-07-09 シャープ株式会社 不揮発性半導体記憶装置及びその制御方法
JP4192060B2 (ja) * 2003-09-12 2008-12-03 シャープ株式会社 不揮発性半導体記憶装置
JP2007531177A (ja) * 2004-04-02 2007-11-01 Ｔｄｋ株式会社 磁気抵抗ヘッドを安定化させる合成フリー層
JP2007048790A (ja) * 2005-08-05 2007-02-22 Sony Corp 記憶素子及びメモリ
US7224601B2 (en) * 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
US7492622B2 (en) * 2007-01-12 2009-02-17 International Business Machines Corporation Sequence of current pulses for depinning magnetic domain walls
US8161430B2 (en) * 2008-04-22 2012-04-17 Qualcomm Incorporated System and method of resistance based memory circuit parameter adjustment

Also Published As

Publication number Publication date
EP2137734B1 (en) 2011-11-23
CA2680752C (en) 2013-11-26
RU2427045C2 (ru) 2011-08-20
US7764537B2 (en) 2010-07-27
WO2008124704A1 (en) 2008-10-16
CN101657859B (zh) 2013-03-27
KR101093825B1 (ko) 2011-12-13
ES2375424T3 (es) 2012-02-29
CN101657859A (zh) 2010-02-24
KR20100004109A (ko) 2010-01-12
MX2009010756A (es) 2009-10-29
CA2680752A1 (en) 2008-10-16
US20080247222A1 (en) 2008-10-09
JP2010524144A (ja) 2010-07-15
JP5231528B2 (ja) 2013-07-10
ATE534997T1 (de) 2011-12-15
RU2009140773A (ru) 2011-05-10
EP2137734A1 (en) 2009-12-30

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Legal Events

Date Code Title Description
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09B Patent application refused [chapter 9.2 patent gazette]
B12B Appeal against refusal [chapter 12.2 patent gazette]
B350 Update of information on the portal [chapter 15.35 patent gazette]