BR112012004116A2 - "processo de texturização da superfície de um substrato de silício em fase gasosa e substrato de silício texturizado para célula solar." - Google Patents

"processo de texturização da superfície de um substrato de silício em fase gasosa e substrato de silício texturizado para célula solar."

Info

Publication number
BR112012004116A2
BR112012004116A2 BR112012004116A BR112012004116A BR112012004116A2 BR 112012004116 A2 BR112012004116 A2 BR 112012004116A2 BR 112012004116 A BR112012004116 A BR 112012004116A BR 112012004116 A BR112012004116 A BR 112012004116A BR 112012004116 A2 BR112012004116 A2 BR 112012004116A2
Authority
BR
Brazil
Prior art keywords
silicon substrate
solar cell
gas phase
surface texturing
texturing process
Prior art date
Application number
BR112012004116A
Other languages
English (en)
Inventor
Dimitri Daineka
Mario Moreno
Pere Roca I Cabarrocas
Original Assignee
Centre Nat Rech Scient
Ecole Polytech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient, Ecole Polytech filed Critical Centre Nat Rech Scient
Publication of BR112012004116A2 publication Critical patent/BR112012004116A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
BR112012004116A 2009-08-24 2010-08-23 "processo de texturização da superfície de um substrato de silício em fase gasosa e substrato de silício texturizado para célula solar." BR112012004116A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0955767A FR2949276B1 (fr) 2009-08-24 2009-08-24 Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire
PCT/FR2010/051756 WO2011023894A2 (fr) 2009-08-24 2010-08-23 Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire

Publications (1)

Publication Number Publication Date
BR112012004116A2 true BR112012004116A2 (pt) 2016-03-15

Family

ID=42110315

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112012004116A BR112012004116A2 (pt) 2009-08-24 2010-08-23 "processo de texturização da superfície de um substrato de silício em fase gasosa e substrato de silício texturizado para célula solar."

Country Status (13)

Country Link
US (1) US8592949B2 (pt)
EP (1) EP2471103B1 (pt)
JP (1) JP5661771B2 (pt)
KR (1) KR101668729B1 (pt)
CN (1) CN102625955B (pt)
AU (1) AU2010288393B2 (pt)
BR (1) BR112012004116A2 (pt)
ES (1) ES2716503T3 (pt)
FR (1) FR2949276B1 (pt)
MX (1) MX2012002246A (pt)
MY (1) MY153996A (pt)
WO (1) WO2011023894A2 (pt)
ZA (1) ZA201201410B (pt)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009005168A1 (de) * 2009-01-14 2010-07-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zur Herstellung einer Solarzelle aus einem Siliziumsubstrat
JP5297543B2 (ja) * 2011-03-30 2013-09-25 パナソニック株式会社 テクスチャ形成面を有するシリコン基板、およびその製造方法
FR2984769B1 (fr) * 2011-12-22 2014-03-07 Total Sa Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure
US20140004648A1 (en) * 2012-06-28 2014-01-02 International Business Machines Corporation Transparent conductive electrode for three dimensional photovoltaic device
JP5858889B2 (ja) * 2012-09-24 2016-02-10 三菱電機株式会社 太陽電池用基板、その製造方法、太陽電池及びその製造方法
JP6308438B2 (ja) * 2012-10-23 2018-04-11 パナソニックＩｐマネジメント株式会社 太陽電池
JP6074560B2 (ja) * 2014-03-21 2017-02-08 ナルックス株式会社 光学素子の製造方法及び光学素子用成型型の製造方法
EP2933843A1 (en) 2014-04-17 2015-10-21 Total Marketing Services Solar cell and method for manufacturing such a solar cell
DE102014110608B4 (de) 2014-07-28 2020-10-08 Helmholtz-Zentrum Berlin für Materialien und Energie Gesellschaft mit beschränkter Haftung Verfahren zur Anschlussprozessierung einer Siliziumschicht
EP3038164B1 (en) 2014-12-22 2018-12-12 Total S.A. Opto-electronic device with textured surface and method of manufacturing thereof
EP3550611A1 (en) 2018-04-06 2019-10-09 Total Solar International Method for manufacturing a photovoltaic device
EP3579284A1 (en) 2018-06-08 2019-12-11 Total SA Method to obtain a photovoltaic device
EP3579285A1 (en) 2018-06-08 2019-12-11 Total SA Method to obtain a photovoltaic device
EP3648174A1 (en) 2018-10-31 2020-05-06 Total SA Photovoltaic assembly

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002164555A (ja) * 2000-11-27 2002-06-07 Kyocera Corp 太陽電池およびその形成方法
JP2003273382A (ja) 2002-03-12 2003-09-26 Kyocera Corp 太陽電池素子
FR2865420B1 (fr) * 2004-01-28 2007-09-14 Saint Gobain Procede de nettoyage d'un substrat
JP2005303255A (ja) * 2004-03-17 2005-10-27 Shinryo Corp 太陽電池用シリコン基板の低反射率加工方法
KR100789987B1 (ko) * 2005-05-24 2008-01-02 성균관대학교산학협력단 실리콘 건식식각을 이용한 웨이퍼 표면의 나노 피라미드 구조 형성방법 및 이 구조를 이용한 게이트 메모리
JP4587988B2 (ja) * 2006-06-13 2010-11-24 京セラ株式会社 太陽電池素子の製造方法

Also Published As

Publication number Publication date
KR20120051047A (ko) 2012-05-21
ES2716503T3 (es) 2019-06-12
JP5661771B2 (ja) 2015-01-28
KR101668729B1 (ko) 2016-10-24
US8592949B2 (en) 2013-11-26
ZA201201410B (en) 2012-10-31
EP2471103B1 (fr) 2019-01-02
FR2949276B1 (fr) 2012-04-06
CN102625955A (zh) 2012-08-01
WO2011023894A3 (fr) 2012-05-03
CN102625955B (zh) 2015-11-25
FR2949276A1 (fr) 2011-02-25
WO2011023894A2 (fr) 2011-03-03
MY153996A (en) 2015-04-30
US20120146194A1 (en) 2012-06-14
AU2010288393A1 (en) 2012-03-15
AU2010288393B2 (en) 2014-09-18
EP2471103A2 (fr) 2012-07-04
JP2013502737A (ja) 2013-01-24
MX2012002246A (es) 2012-12-17

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B25C Requirement related to requested transfer of rights

Owner name: ECOLE POLYTECHNIQUE (FR) , CENTRE NATIONAL DE LA R

B25B Requested transfer of rights rejected

Owner name: ECOLE POLYTECHNIQUE (FR) , CENTRE NATIONAL DE LA R

B25A Requested transfer of rights approved

Owner name: ECOLE POLYTECHNIQUE (FR) ; CENTRE NATIONAL DE LA R

B25A Requested transfer of rights approved

Owner name: ECOLE POLYTECHNIQUE (FR) ; CENTRE NATIONAL DE LA R

B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06T Formal requirements before examination [chapter 6.20 patent gazette]
B11E Dismissal acc. art. 34 of ipl - requirements for examination incomplete
B11T Dismissal: dismissal of application maintained