BE778757A - Procede permettant la fabrication d'un dispositif semiconducteur et dispositif ainsi fabrique - Google Patents
Procede permettant la fabrication d'un dispositif semiconducteur et dispositif ainsi fabriqueInfo
- Publication number
- BE778757A BE778757A BE778757A BE778757A BE778757A BE 778757 A BE778757 A BE 778757A BE 778757 A BE778757 A BE 778757A BE 778757 A BE778757 A BE 778757A BE 778757 A BE778757 A BE 778757A
- Authority
- BE
- Belgium
- Prior art keywords
- manufactured
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/098—Layer conversion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2104752A DE2104752B2 (de) | 1971-02-02 | 1971-02-02 | Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode |
Publications (1)
Publication Number | Publication Date |
---|---|
BE778757A true BE778757A (fr) | 1972-07-31 |
Family
ID=5797592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE778757A BE778757A (fr) | 1971-02-02 | 1972-01-31 | Procede permettant la fabrication d'un dispositif semiconducteur et dispositif ainsi fabrique |
Country Status (14)
Country | Link |
---|---|
US (2) | US3764415A (xx) |
JP (1) | JPS5313956B1 (xx) |
AU (1) | AU463889B2 (xx) |
BE (1) | BE778757A (xx) |
BR (1) | BR7200528D0 (xx) |
CA (1) | CA954235A (xx) |
CH (1) | CH538195A (xx) |
DE (1) | DE2104752B2 (xx) |
ES (1) | ES399322A1 (xx) |
FR (1) | FR2124340B1 (xx) |
GB (1) | GB1379975A (xx) |
IT (1) | IT948960B (xx) |
NL (1) | NL7201080A (xx) |
SE (1) | SE366607B (xx) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2108781B1 (xx) * | 1970-10-05 | 1974-10-31 | Radiotechnique Compelec | |
US3935585A (en) * | 1972-08-22 | 1976-01-27 | Korovin Stanislav Konstantinov | Semiconductor diode with voltage-dependent capacitance |
GB1459231A (en) * | 1973-06-26 | 1976-12-22 | Mullard Ltd | Semiconductor devices |
US3945029A (en) * | 1974-03-19 | 1976-03-16 | Sergei Fedorovich Kausov | Semiconductor diode with layers of different but related resistivities |
DE2833318C2 (de) * | 1978-07-29 | 1983-03-10 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Kapazitätsdiode |
US4226648A (en) * | 1979-03-16 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy |
US4369072A (en) * | 1981-01-22 | 1983-01-18 | International Business Machines Corp. | Method for forming IGFET devices having improved drain voltage characteristics |
US4381952A (en) * | 1981-05-11 | 1983-05-03 | Rca Corporation | Method for fabricating a low loss varactor diode |
JP2573201B2 (ja) * | 1987-02-26 | 1997-01-22 | 株式会社東芝 | 半導体素子の拡散層形成方法 |
JPS6459874A (en) * | 1987-08-31 | 1989-03-07 | Toko Inc | Manufacture of variable-capacitance diode |
US4903086A (en) * | 1988-01-19 | 1990-02-20 | E-Systems, Inc. | Varactor tuning diode with inversion layer |
US5557140A (en) * | 1995-04-12 | 1996-09-17 | Hughes Aircraft Company | Process tolerant, high-voltage, bi-level capacitance varactor diode |
US5789801A (en) * | 1995-11-09 | 1998-08-04 | Endgate Corporation | Varactor with electrostatic barrier |
EP1139434A3 (en) | 2000-03-29 | 2003-12-10 | Tyco Electronics Corporation | Variable capacity diode with hyperabrubt junction profile |
EP1791183A1 (en) * | 2005-11-24 | 2007-05-30 | Technische Universiteit Delft | Varactor element and low distortion varactor circuit arrangement |
WO2007061308A1 (en) * | 2005-11-24 | 2007-05-31 | Technische Universiteit Delft | Varactor element and low distortion varactor circuit arrangement |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
US3523838A (en) * | 1967-05-09 | 1970-08-11 | Motorola Inc | Variable capacitance diode |
-
1971
- 1971-02-02 DE DE2104752A patent/DE2104752B2/de not_active Withdrawn
-
1972
- 1972-01-26 NL NL7201080A patent/NL7201080A/xx not_active Application Discontinuation
- 1972-01-28 GB GB412372A patent/GB1379975A/en not_active Expired
- 1972-01-29 JP JP1027072A patent/JPS5313956B1/ja active Pending
- 1972-01-29 ES ES399322A patent/ES399322A1/es not_active Expired
- 1972-01-29 IT IT67262/72A patent/IT948960B/it active
- 1972-01-31 SE SE01084/72A patent/SE366607B/xx unknown
- 1972-01-31 CA CA133,488A patent/CA954235A/en not_active Expired
- 1972-01-31 US US00222156A patent/US3764415A/en not_active Expired - Lifetime
- 1972-01-31 CH CH134672A patent/CH538195A/de not_active IP Right Cessation
- 1972-01-31 BE BE778757A patent/BE778757A/xx unknown
- 1972-01-31 BR BR528/72A patent/BR7200528D0/pt unknown
- 1972-02-01 FR FR7203275A patent/FR2124340B1/fr not_active Expired
- 1972-02-02 AU AU38566/72A patent/AU463889B2/en not_active Expired
-
1973
- 1973-05-23 US US00363278A patent/US3840306A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2104752A1 (de) | 1972-08-10 |
JPS5313956B1 (xx) | 1978-05-13 |
ES399322A1 (es) | 1974-12-01 |
AU463889B2 (en) | 1975-07-23 |
DE2104752B2 (de) | 1975-02-20 |
IT948960B (it) | 1973-06-11 |
FR2124340B1 (xx) | 1977-12-23 |
BR7200528D0 (pt) | 1974-10-22 |
US3840306A (en) | 1974-10-08 |
CA954235A (en) | 1974-09-03 |
AU3856672A (en) | 1973-08-09 |
GB1379975A (en) | 1975-01-08 |
NL7201080A (xx) | 1972-08-04 |
CH538195A (de) | 1973-06-15 |
SE366607B (xx) | 1974-04-29 |
FR2124340A1 (xx) | 1972-09-22 |
US3764415A (en) | 1973-10-09 |
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