IT948960B - Procedimento per la fabbricazione di diodi semiconduttori a capaci tanza e diodo ottenuto con il pro cedimento - Google Patents

Procedimento per la fabbricazione di diodi semiconduttori a capaci tanza e diodo ottenuto con il pro cedimento

Info

Publication number
IT948960B
IT948960B IT67262/72A IT6726272A IT948960B IT 948960 B IT948960 B IT 948960B IT 67262/72 A IT67262/72 A IT 67262/72A IT 6726272 A IT6726272 A IT 6726272A IT 948960 B IT948960 B IT 948960B
Authority
IT
Italy
Prior art keywords
procedure
manufacturing capacity
diode obtained
semiconducting diodes
semiconducting
Prior art date
Application number
IT67262/72A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT948960B publication Critical patent/IT948960B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/098—Layer conversion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
IT67262/72A 1971-02-02 1972-01-29 Procedimento per la fabbricazione di diodi semiconduttori a capaci tanza e diodo ottenuto con il pro cedimento IT948960B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2104752A DE2104752B2 (de) 1971-02-02 1971-02-02 Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode

Publications (1)

Publication Number Publication Date
IT948960B true IT948960B (it) 1973-06-11

Family

ID=5797592

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67262/72A IT948960B (it) 1971-02-02 1972-01-29 Procedimento per la fabbricazione di diodi semiconduttori a capaci tanza e diodo ottenuto con il pro cedimento

Country Status (14)

Country Link
US (2) US3764415A (it)
JP (1) JPS5313956B1 (it)
AU (1) AU463889B2 (it)
BE (1) BE778757A (it)
BR (1) BR7200528D0 (it)
CA (1) CA954235A (it)
CH (1) CH538195A (it)
DE (1) DE2104752B2 (it)
ES (1) ES399322A1 (it)
FR (1) FR2124340B1 (it)
GB (1) GB1379975A (it)
IT (1) IT948960B (it)
NL (1) NL7201080A (it)
SE (1) SE366607B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2108781B1 (it) * 1970-10-05 1974-10-31 Radiotechnique Compelec
US3935585A (en) * 1972-08-22 1976-01-27 Korovin Stanislav Konstantinov Semiconductor diode with voltage-dependent capacitance
GB1459231A (en) * 1973-06-26 1976-12-22 Mullard Ltd Semiconductor devices
US3945029A (en) * 1974-03-19 1976-03-16 Sergei Fedorovich Kausov Semiconductor diode with layers of different but related resistivities
DE2833318C2 (de) * 1978-07-29 1983-03-10 Philips Patentverwaltung Gmbh, 2000 Hamburg Kapazitätsdiode
US4226648A (en) * 1979-03-16 1980-10-07 Bell Telephone Laboratories, Incorporated Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
US4381952A (en) * 1981-05-11 1983-05-03 Rca Corporation Method for fabricating a low loss varactor diode
JP2573201B2 (ja) * 1987-02-26 1997-01-22 株式会社東芝 半導体素子の拡散層形成方法
JPS6459874A (en) * 1987-08-31 1989-03-07 Toko Inc Manufacture of variable-capacitance diode
US4903086A (en) * 1988-01-19 1990-02-20 E-Systems, Inc. Varactor tuning diode with inversion layer
US5557140A (en) * 1995-04-12 1996-09-17 Hughes Aircraft Company Process tolerant, high-voltage, bi-level capacitance varactor diode
US5789801A (en) * 1995-11-09 1998-08-04 Endgate Corporation Varactor with electrostatic barrier
EP1139434A3 (en) 2000-03-29 2003-12-10 Tyco Electronics Corporation Variable capacity diode with hyperabrubt junction profile
EP1791183A1 (en) * 2005-11-24 2007-05-30 Technische Universiteit Delft Varactor element and low distortion varactor circuit arrangement
WO2007061308A1 (en) * 2005-11-24 2007-05-31 Technische Universiteit Delft Varactor element and low distortion varactor circuit arrangement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3523838A (en) * 1967-05-09 1970-08-11 Motorola Inc Variable capacitance diode

Also Published As

Publication number Publication date
DE2104752A1 (de) 1972-08-10
JPS5313956B1 (it) 1978-05-13
ES399322A1 (es) 1974-12-01
AU463889B2 (en) 1975-07-23
DE2104752B2 (de) 1975-02-20
FR2124340B1 (it) 1977-12-23
BR7200528D0 (pt) 1974-10-22
US3840306A (en) 1974-10-08
CA954235A (en) 1974-09-03
AU3856672A (en) 1973-08-09
GB1379975A (en) 1975-01-08
BE778757A (fr) 1972-07-31
NL7201080A (it) 1972-08-04
CH538195A (de) 1973-06-15
SE366607B (it) 1974-04-29
FR2124340A1 (it) 1972-09-22
US3764415A (en) 1973-10-09

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