AU2003241757A1 - Method of electroless plating - Google Patents

Method of electroless plating

Info

Publication number
AU2003241757A1
AU2003241757A1 AU2003241757A AU2003241757A AU2003241757A1 AU 2003241757 A1 AU2003241757 A1 AU 2003241757A1 AU 2003241757 A AU2003241757 A AU 2003241757A AU 2003241757 A AU2003241757 A AU 2003241757A AU 2003241757 A1 AU2003241757 A1 AU 2003241757A1
Authority
AU
Australia
Prior art keywords
electroless plating
electroless
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003241757A
Inventor
Miho Jomen
Yoshinori Marumo
Hiroshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003241757A1 publication Critical patent/AU2003241757A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28—Sensitising or activating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C23C18/405—Formaldehyde
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
AU2003241757A 2002-09-27 2003-05-23 Method of electroless plating Abandoned AU2003241757A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-283297 2002-09-27
JP2002283297A JP2004115885A (en) 2002-09-27 2002-09-27 Electroless plating method
PCT/JP2003/006499 WO2004029328A1 (en) 2002-09-27 2003-05-23 Method of electroless plating

Publications (1)

Publication Number Publication Date
AU2003241757A1 true AU2003241757A1 (en) 2004-04-19

Family

ID=32040558

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003241757A Abandoned AU2003241757A1 (en) 2002-09-27 2003-05-23 Method of electroless plating

Country Status (5)

Country Link
JP (1) JP2004115885A (en)
KR (1) KR20050059178A (en)
CN (1) CN1685081A (en)
AU (1) AU2003241757A1 (en)
WO (1) WO2004029328A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070048447A1 (en) * 2005-08-31 2007-03-01 Alan Lee System and method for forming patterned copper lines through electroless copper plating
JP5308622B2 (en) * 2006-12-01 2013-10-09 廖智良 Horizontal electroplating electrodeposition method and horizontal electroless plating method on a substrate
CN101578394B (en) 2007-07-31 2011-08-03 日矿金属株式会社 Plated material having metal thin film formed by electroless plating, and method for production thereof
US8395264B2 (en) 2009-01-30 2013-03-12 Jx Nippon Mining & Metals Corporation Substrate comprising alloy film of metal element having barrier function and metal element having catalytic power
JP2013213263A (en) * 2012-04-03 2013-10-17 Tokyo Electron Ltd Plating apparatus, plating method, and storage medium
JP5602790B2 (en) * 2012-06-06 2014-10-08 学校法人関東学院 Electroless plating bath and electroless plating film
US9469902B2 (en) * 2014-02-18 2016-10-18 Lam Research Corporation Electroless deposition of continuous platinum layer
JP6404174B2 (en) * 2015-04-16 2018-10-10 東京エレクトロン株式会社 Plating processing method, storage medium, and plating processing system
JP6201029B1 (en) * 2016-12-26 2017-09-20 日本エレクトロプレイテイング・エンジニヤース株式会社 Electroless platinum plating solution and electroless platinum plating method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000212754A (en) * 1999-01-22 2000-08-02 Sony Corp Plating method, its device and plated structure
JP2001181851A (en) * 1999-10-12 2001-07-03 Sony Corp Plating method and plated structure
US6451689B1 (en) * 1999-10-20 2002-09-17 Rohm Co., Ltd. Method for manufacturing semiconductor device
JP2001355074A (en) * 2000-04-10 2001-12-25 Sony Corp Electroless plating method, and apparatus thereof
JP2001316834A (en) * 2000-04-28 2001-11-16 Sony Corp Apparatus for electroless plating and method for forming conductive film
JP2002053971A (en) * 2000-08-03 2002-02-19 Sony Corp Plating method, plating structure, method for producing semiconductor device, and semiconductor device
JP4083968B2 (en) * 2000-11-02 2008-04-30 株式会社東芝 Manufacturing method of semiconductor device
JP3850226B2 (en) * 2001-04-02 2006-11-29 株式会社荏原製作所 Substrate processing equipment

Also Published As

Publication number Publication date
JP2004115885A (en) 2004-04-15
KR20050059178A (en) 2005-06-17
WO2004029328A1 (en) 2004-04-08
CN1685081A (en) 2005-10-19

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase