AU2001290329A1 - Vacuum processing device - Google Patents

Vacuum processing device

Info

Publication number
AU2001290329A1
AU2001290329A1 AU2001290329A AU9032901A AU2001290329A1 AU 2001290329 A1 AU2001290329 A1 AU 2001290329A1 AU 2001290329 A AU2001290329 A AU 2001290329A AU 9032901 A AU9032901 A AU 9032901A AU 2001290329 A1 AU2001290329 A1 AU 2001290329A1
Authority
AU
Australia
Prior art keywords
processing device
vacuum processing
vacuum
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001290329A
Inventor
Tsuyoshi Hida
Kosuke Imafuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001290329A1 publication Critical patent/AU2001290329A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Details Of Valves (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
AU2001290329A 2000-10-02 2001-10-01 Vacuum processing device Abandoned AU2001290329A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-302124 2000-10-02
JP2000302124 2000-10-02
PCT/JP2001/008624 WO2002029877A1 (en) 2000-10-02 2001-10-01 Vacuum processing device

Publications (1)

Publication Number Publication Date
AU2001290329A1 true AU2001290329A1 (en) 2002-04-15

Family

ID=18783534

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001290329A Abandoned AU2001290329A1 (en) 2000-10-02 2001-10-01 Vacuum processing device

Country Status (6)

Country Link
US (1) US20040083970A1 (en)
JP (1) JP4119747B2 (en)
CN (1) CN1310292C (en)
AU (1) AU2001290329A1 (en)
TW (1) TWI290589B (en)
WO (1) WO2002029877A1 (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010062209A (en) * 1999-12-10 2001-07-07 히가시 데쓰로 Processing apparatus with a chamber having therein a high-etching resistant sprayed film
US20040081746A1 (en) * 2000-12-12 2004-04-29 Kosuke Imafuku Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment
US7311797B2 (en) 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
JP4006596B2 (en) * 2002-07-19 2007-11-14 信越化学工業株式会社 Rare earth oxide sprayed member and powder for spraying
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US6798519B2 (en) 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7780786B2 (en) * 2002-11-28 2010-08-24 Tokyo Electron Limited Internal member of a plasma processing vessel
US20040182315A1 (en) * 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
WO2004095532A2 (en) * 2003-03-31 2004-11-04 Tokyo Electron Limited A barrier layer for a processing element and a method of forming the same
US20050109276A1 (en) * 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
US20050199183A1 (en) * 2004-03-09 2005-09-15 Masatsugu Arai Plasma processing apparatus
JP4010314B2 (en) * 2004-12-17 2007-11-21 東京エレクトロン株式会社 Gate valve device, processing system, and seal member replacement method
JP4437743B2 (en) * 2004-12-21 2010-03-24 東京エレクトロン株式会社 Opening / closing mechanism for vacuum processing apparatus and vacuum processing apparatus
JP4629545B2 (en) * 2005-09-29 2011-02-09 株式会社日立ハイテクノロジーズ Vacuum processing equipment
CN100423186C (en) * 2005-10-31 2008-10-01 中芯国际集成电路制造(上海)有限公司 Method and device for preventing grain defect of wafer in use for vacuum system
JP4332748B2 (en) * 2005-12-27 2009-09-16 セイコーエプソン株式会社 Ceramic film manufacturing method and ceramic film manufacturing apparatus
DE102006043813B4 (en) * 2006-02-21 2011-05-19 Von Ardenne Anlagentechnik Gmbh Gate valve for a coating plant and coating plant
JP2008192802A (en) * 2007-02-05 2008-08-21 Spansion Llc Semiconductor manufacturing device, and its manufacturing method
US20100021273A1 (en) * 2008-07-28 2010-01-28 Applied Materials, Inc. Concrete vacuum chamber
CN102994977B (en) * 2011-09-08 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 Cavity apparatus, and substrate processing device possessing same
NL2007658C2 (en) * 2011-10-26 2013-05-01 Smit Ovens Bv DEVICE FOR HEATING A SUBSTRATE.
JP5593418B2 (en) * 2013-05-08 2014-09-24 東京エレクトロン株式会社 Processing vessel and plasma processing apparatus
JP6812264B2 (en) * 2017-02-16 2021-01-13 東京エレクトロン株式会社 Vacuum processing equipment and maintenance equipment
CN112447548A (en) * 2019-09-03 2021-03-05 中微半导体设备(上海)股份有限公司 Semiconductor processing equipment and transfer port structure between chambers
TW202302907A (en) * 2021-05-12 2023-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cvd apparatus and film forming method
CN115354300B (en) * 2022-08-25 2023-11-21 拓荆科技(上海)有限公司 Thin film deposition apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198442A (en) * 1977-10-31 1980-04-15 Howmet Turbine Components Corporation Method for producing elevated temperature corrosion resistant articles
US4593007A (en) * 1984-12-06 1986-06-03 The Perkin-Elmer Corporation Aluminum and silica clad refractory oxide thermal spray powder
JP2804762B2 (en) * 1988-07-19 1998-09-30 東京エレクトロン株式会社 Plasma processing equipment
JP2644309B2 (en) * 1988-11-04 1997-08-25 株式会社東芝 Semiconductor manufacturing equipment
KR960002534A (en) * 1994-06-07 1996-01-26 이노우에 아키라 Pressure reducing and atmospheric pressure treatment device
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
JPH104083A (en) * 1996-06-17 1998-01-06 Kyocera Corp Anticorrosive material for semiconductor fabrication
JP3362113B2 (en) * 1997-07-15 2003-01-07 日本碍子株式会社 Corrosion-resistant member, wafer mounting member, and method of manufacturing corrosion-resistant member
US6756082B1 (en) * 1999-02-05 2004-06-29 Siemens Westinghouse Power Corporation Thermal barrier coating resistant to sintering

Also Published As

Publication number Publication date
JPWO2002029877A1 (en) 2004-02-19
JP4119747B2 (en) 2008-07-16
TWI290589B (en) 2007-12-01
CN1468444A (en) 2004-01-14
CN1310292C (en) 2007-04-11
US20040083970A1 (en) 2004-05-06
WO2002029877A1 (en) 2002-04-11

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