AU2001259557A1 - Method of adjusting the thickness of an electrode in a plasma processing system - Google Patents

Method of adjusting the thickness of an electrode in a plasma processing system

Info

Publication number
AU2001259557A1
AU2001259557A1 AU2001259557A AU5955701A AU2001259557A1 AU 2001259557 A1 AU2001259557 A1 AU 2001259557A1 AU 2001259557 A AU2001259557 A AU 2001259557A AU 5955701 A AU5955701 A AU 5955701A AU 2001259557 A1 AU2001259557 A1 AU 2001259557A1
Authority
AU
Australia
Prior art keywords
electrode
adjusting
thickness
processing system
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001259557A
Inventor
Thomas F. A. Bibby Jr.
Wayne L. Johnson
Eric J. Strang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001259557A1 publication Critical patent/AU2001259557A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
AU2001259557A 2000-05-12 2001-05-08 Method of adjusting the thickness of an electrode in a plasma processing system Abandoned AU2001259557A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US20390900P 2000-05-12 2000-05-12
US60203909 2000-05-12
PCT/US2001/014636 WO2001088966A2 (en) 2000-05-12 2001-05-08 Method of adjusting the thickness of an electrode in a plasma processing system

Publications (1)

Publication Number Publication Date
AU2001259557A1 true AU2001259557A1 (en) 2001-11-26

Family

ID=22755796

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001259557A Abandoned AU2001259557A1 (en) 2000-05-12 2001-05-08 Method of adjusting the thickness of an electrode in a plasma processing system

Country Status (7)

Country Link
US (1) US6913703B2 (en)
JP (1) JP2003533879A (en)
KR (1) KR100554426B1 (en)
CN (1) CN1233019C (en)
AU (1) AU2001259557A1 (en)
TW (1) TW531820B (en)
WO (1) WO2001088966A2 (en)

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AU2002242025A1 (en) * 2001-01-29 2002-08-12 Olga Kachurina Advanced composite ormosil coatings
US6852242B2 (en) * 2001-02-23 2005-02-08 Zhi-Wen Sun Cleaning of multicompositional etchant residues
US20030042227A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Apparatus and method for tailoring an etch profile
WO2003100817A1 (en) * 2002-05-23 2003-12-04 Lam Research Corporation Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode
US6838012B2 (en) * 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
US20050241762A1 (en) * 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7307013B2 (en) * 2004-06-30 2007-12-11 Sandisk 3D Llc Nonselective unpatterned etchback to expose buried patterned features
US8211067B2 (en) 2004-11-30 2012-07-03 Nemoto Kyorindo Co., Ltd. Mechanical system
US7837838B2 (en) 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7678710B2 (en) 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7645710B2 (en) 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US20080000497A1 (en) * 2006-06-30 2008-01-03 Applied Materials, Inc. Removal of organic-containing layers from large surface areas
US7829815B2 (en) * 2006-09-22 2010-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable electrodes and coils for plasma density distribution control
TWI435376B (en) 2006-09-26 2014-04-21 Applied Materials Inc Fluorine plasma treatment of high-k gate stack for defect passivation
US8101052B2 (en) * 2006-11-27 2012-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable anode assembly for a substrate wet processing apparatus
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
KR100977622B1 (en) * 2008-06-11 2010-08-23 (주)이루자 Metal catalyst doping apparatus and method and method of manufacturing flat display device using the same
KR101007665B1 (en) * 2008-07-04 2011-01-13 (주)이루자 Metal catalyst doping apparatus and method and method of manufacturing flat display device using the same
KR101382607B1 (en) * 2012-10-26 2014-04-07 성균관대학교산학협력단 Etching equipment for large scaled nano device and method for etching nano device
JP2020516770A (en) 2017-04-07 2020-06-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Plasma density control on the edge of substrate
KR102421625B1 (en) 2017-06-27 2022-07-19 캐논 아네르바 가부시키가이샤 Plasma processing device
CN110800377B (en) 2017-06-27 2022-04-29 佳能安内华股份有限公司 Plasma processing apparatus
SG11201912566WA (en) 2017-06-27 2020-01-30 Canon Anelva Corp Plasma processing apparatus
JP6595002B2 (en) 2017-06-27 2019-10-23 キヤノンアネルバ株式会社 Sputtering equipment
JP2019033236A (en) * 2017-08-10 2019-02-28 株式会社日本製鋼所 Atomic layer growth apparatus, method for film formation using the same, and cleaning method thereof
SG11202009122YA (en) * 2018-06-26 2020-10-29 Canon Anelva Corp Plasma processing apparatus, plasma processing method, program, and memory medium
JP2021038452A (en) 2019-09-05 2021-03-11 東京エレクトロン株式会社 Plasma treatment apparatus and control method
CN113013006B (en) * 2021-03-03 2022-01-21 长江存储科技有限责任公司 Upper electrode and reaction chamber
CN115050644B (en) * 2022-08-17 2022-11-15 合肥晶合集成电路股份有限公司 Wafer etching method and system

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342901A (en) * 1980-08-11 1982-08-03 Eaton Corporation Plasma etching electrode
US4581118A (en) * 1983-01-26 1986-04-08 Materials Research Corporation Shaped field magnetron electrode
KR910000273B1 (en) * 1985-05-09 1991-01-23 마쯔시다덴기산교 가부시기가이샤 Plasma processor
JPH0741153Y2 (en) * 1987-10-26 1995-09-20 東京応化工業株式会社 Sample processing electrode
DE69531880T2 (en) * 1994-04-28 2004-09-09 Applied Materials, Inc., Santa Clara Method for operating a CVD reactor with a high plasma density with combined inductive and capacitive coupling
US5628869A (en) * 1994-05-09 1997-05-13 Lsi Logic Corporation Plasma enhanced chemical vapor reactor with shaped electrodes
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
TW449820B (en) * 1996-02-15 2001-08-11 Tokai Carbon Kk Plasma-etching electrode plate
JP3454333B2 (en) * 1996-04-22 2003-10-06 日清紡績株式会社 Plasma etching electrode
JP3598717B2 (en) * 1997-03-19 2004-12-08 株式会社日立製作所 Plasma processing equipment
JPH1126435A (en) * 1997-07-03 1999-01-29 Hitachi Chem Co Ltd Electrode for plasma etching

Also Published As

Publication number Publication date
JP2003533879A (en) 2003-11-11
KR20020094039A (en) 2002-12-16
US6913703B2 (en) 2005-07-05
CN1429399A (en) 2003-07-09
WO2001088966A2 (en) 2001-11-22
TW531820B (en) 2003-05-11
KR100554426B1 (en) 2006-02-22
WO2001088966A3 (en) 2002-03-28
CN1233019C (en) 2005-12-21
US20030121886A1 (en) 2003-07-03

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