AU2001279189A1 - Plasma processing method and apparatus - Google Patents
Plasma processing method and apparatusInfo
- Publication number
- AU2001279189A1 AU2001279189A1 AU2001279189A AU7918901A AU2001279189A1 AU 2001279189 A1 AU2001279189 A1 AU 2001279189A1 AU 2001279189 A AU2001279189 A AU 2001279189A AU 7918901 A AU7918901 A AU 7918901A AU 2001279189 A1 AU2001279189 A1 AU 2001279189A1
- Authority
- AU
- Australia
- Prior art keywords
- processing method
- plasma processing
- plasma
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22383400P | 2000-08-08 | 2000-08-08 | |
US60/223,834 | 2000-08-08 | ||
PCT/US2001/024491 WO2002013225A2 (en) | 2000-08-08 | 2001-08-06 | Plasma processing method and apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001279189A1 true AU2001279189A1 (en) | 2002-02-18 |
Family
ID=22838144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001279189A Abandoned AU2001279189A1 (en) | 2000-08-08 | 2001-08-06 | Plasma processing method and apparatus |
Country Status (4)
Country | Link |
---|---|
US (2) | US20030137251A1 (en) |
AU (1) | AU2001279189A1 (en) |
TW (1) | TW511397B (en) |
WO (1) | WO2002013225A2 (en) |
Families Citing this family (66)
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US6703080B2 (en) * | 2002-05-20 | 2004-03-09 | Eni Technology, Inc. | Method and apparatus for VHF plasma processing with load mismatch reliability and stability |
US7216067B2 (en) * | 2002-12-31 | 2007-05-08 | Tokyo Electron Limited | Non-linear test load and method of calibrating a plasma system |
US20050130620A1 (en) * | 2003-12-16 | 2005-06-16 | Andreas Fischer | Segmented radio frequency electrode apparatus and method for uniformity control |
IES20050301A2 (en) | 2005-05-11 | 2006-11-15 | Univ Dublin City | Plasma source |
US20070029193A1 (en) * | 2005-08-03 | 2007-02-08 | Tokyo Electron Limited | Segmented biased peripheral electrode in plasma processing method and apparatus |
US7341954B2 (en) * | 2005-08-24 | 2008-03-11 | Tokyo Electron Limited | Method and apparatus for determining an operation status of a plasma processing apparatus, program and storage medium storing same |
TWI440405B (en) * | 2007-10-22 | 2014-06-01 | New Power Plasma Co Ltd | Capacitively coupled plasma reactor |
US7777599B2 (en) | 2007-11-02 | 2010-08-17 | Applied Materials, Inc. | Methods and apparatus for controlling characteristics of a plasma |
KR101166988B1 (en) * | 2007-12-25 | 2012-07-24 | 어플라이드 머티어리얼스, 인코포레이티드 | Asymmetrical rf drive for electrode of plasma chamber |
JP5749020B2 (en) * | 2008-01-31 | 2015-07-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Apparatus for coupling RF power to a plasma chamber |
US20100123502A1 (en) * | 2008-07-09 | 2010-05-20 | Bhutta Imran A | System for providing a substantially uniform potential profile |
US20100015357A1 (en) * | 2008-07-18 | 2010-01-21 | Hiroji Hanawa | Capacitively coupled plasma etch chamber with multiple rf feeds |
US8438990B2 (en) * | 2008-09-30 | 2013-05-14 | Applied Materials, Inc. | Multi-electrode PECVD source |
KR101627297B1 (en) * | 2008-10-13 | 2016-06-03 | 한국에이에스엠지니텍 주식회사 | Plasma processing member, deposition apparatus including the same and depositing method using the same |
CN102365906B (en) * | 2009-02-13 | 2016-02-03 | 应用材料公司 | To reflux bus for the RF bus of plasma chamber electrode and RF |
DE102009015178B4 (en) * | 2009-03-19 | 2012-09-06 | Forschungs- Und Applikationslabor Plasmatechnik Gmbh Dresden | Apparatus and method for the plasma assisted surface modification of substrates in vacuum |
US9039864B2 (en) * | 2009-09-29 | 2015-05-26 | Applied Materials, Inc. | Off-center ground return for RF-powered showerhead |
JP5730521B2 (en) * | 2010-09-08 | 2015-06-10 | 株式会社日立ハイテクノロジーズ | Heat treatment equipment |
WO2012164050A1 (en) | 2011-05-31 | 2012-12-06 | Surcoatec Ag | Apparatus and method for coating and/or for removing material by means of pecvd/cde |
US9396900B2 (en) | 2011-11-16 | 2016-07-19 | Tokyo Electron Limited | Radio frequency (RF) power coupling system utilizing multiple RF power coupling elements for control of plasma properties |
US9508530B2 (en) | 2011-11-21 | 2016-11-29 | Lam Research Corporation | Plasma processing chamber with flexible symmetric RF return strap |
US9396908B2 (en) * | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
US9263240B2 (en) | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
WO2013078098A1 (en) * | 2011-11-23 | 2013-05-30 | Lam Research Corporation | Multi zone gas injection upper electrode system |
US20140299273A1 (en) * | 2013-04-08 | 2014-10-09 | Lam Research Corporation | Multi-segment electrode assembly and methods therefor |
US9196459B2 (en) | 2014-01-10 | 2015-11-24 | Reno Technologies, Inc. | RF impedance matching network |
US9697991B2 (en) | 2014-01-10 | 2017-07-04 | Reno Technologies, Inc. | RF impedance matching network |
US10431428B2 (en) | 2014-01-10 | 2019-10-01 | Reno Technologies, Inc. | System for providing variable capacitance |
US9844127B2 (en) | 2014-01-10 | 2017-12-12 | Reno Technologies, Inc. | High voltage switching circuit |
US9755641B1 (en) | 2014-01-10 | 2017-09-05 | Reno Technologies, Inc. | High speed high voltage switching circuit |
US9496122B1 (en) | 2014-01-10 | 2016-11-15 | Reno Technologies, Inc. | Electronically variable capacitor and RF matching network incorporating same |
US10455729B2 (en) | 2014-01-10 | 2019-10-22 | Reno Technologies, Inc. | Enclosure cooling system |
US9865432B1 (en) | 2014-01-10 | 2018-01-09 | Reno Technologies, Inc. | RF impedance matching network |
US10340879B2 (en) | 2015-02-18 | 2019-07-02 | Reno Technologies, Inc. | Switching circuit |
US9306533B1 (en) | 2015-02-20 | 2016-04-05 | Reno Technologies, Inc. | RF impedance matching network |
US9729122B2 (en) | 2015-02-18 | 2017-08-08 | Reno Technologies, Inc. | Switching circuit |
US9525412B2 (en) | 2015-02-18 | 2016-12-20 | Reno Technologies, Inc. | Switching circuit |
US11017983B2 (en) | 2015-02-18 | 2021-05-25 | Reno Technologies, Inc. | RF power amplifier |
US11335540B2 (en) | 2015-06-29 | 2022-05-17 | Reno Technologies, Inc. | Impedance matching network and method |
US11081316B2 (en) | 2015-06-29 | 2021-08-03 | Reno Technologies, Inc. | Impedance matching network and method |
US10692699B2 (en) | 2015-06-29 | 2020-06-23 | Reno Technologies, Inc. | Impedance matching with restricted capacitor switching |
US11150283B2 (en) | 2015-06-29 | 2021-10-19 | Reno Technologies, Inc. | Amplitude and phase detection circuit |
US11342160B2 (en) | 2015-06-29 | 2022-05-24 | Reno Technologies, Inc. | Filter for impedance matching |
US10984986B2 (en) | 2015-06-29 | 2021-04-20 | Reno Technologies, Inc. | Impedance matching network and method |
US11342161B2 (en) | 2015-06-29 | 2022-05-24 | Reno Technologies, Inc. | Switching circuit with voltage bias |
KR20170075887A (en) * | 2015-12-23 | 2017-07-04 | 삼성전자주식회사 | apparatus for processing plasma and plasma processing method, plasma etching method of the same |
US9721759B1 (en) * | 2016-04-04 | 2017-08-01 | Aixtron Se | System and method for distributing RF power to a plasma source |
CN109072420A (en) * | 2016-04-29 | 2018-12-21 | 雷特罗萨米科技有限责任公司 | Plasma reactor with separated electrode |
US10777385B2 (en) * | 2016-07-14 | 2020-09-15 | Tokyo Electron Limited | Method for RF power distribution in a multi-zone electrode array |
US11251019B2 (en) * | 2016-12-15 | 2022-02-15 | Toyota Jidosha Kabushiki Kaisha | Plasma device |
JP6972131B2 (en) * | 2016-12-27 | 2021-11-24 | エヴァテック・アーゲー | Vacuum plasma processing object processing equipment |
US11289307B2 (en) | 2017-07-10 | 2022-03-29 | Reno Technologies, Inc. | Impedance matching network and method |
US11393659B2 (en) | 2017-07-10 | 2022-07-19 | Reno Technologies, Inc. | Impedance matching network and method |
US10727029B2 (en) | 2017-07-10 | 2020-07-28 | Reno Technologies, Inc | Impedance matching using independent capacitance and frequency control |
US10714314B1 (en) | 2017-07-10 | 2020-07-14 | Reno Technologies, Inc. | Impedance matching network and method |
US11315758B2 (en) | 2017-07-10 | 2022-04-26 | Reno Technologies, Inc. | Impedance matching using electronically variable capacitance and frequency considerations |
US11101110B2 (en) | 2017-07-10 | 2021-08-24 | Reno Technologies, Inc. | Impedance matching network and method |
US11476091B2 (en) | 2017-07-10 | 2022-10-18 | Reno Technologies, Inc. | Impedance matching network for diagnosing plasma chamber |
US11521833B2 (en) | 2017-07-10 | 2022-12-06 | Reno Technologies, Inc. | Combined RF generator and RF solid-state matching network |
US11114280B2 (en) | 2017-07-10 | 2021-09-07 | Reno Technologies, Inc. | Impedance matching with multi-level power setpoint |
US10483090B2 (en) | 2017-07-10 | 2019-11-19 | Reno Technologies, Inc. | Restricted capacitor switching |
US11398370B2 (en) | 2017-07-10 | 2022-07-26 | Reno Technologies, Inc. | Semiconductor manufacturing using artificial intelligence |
JP6863199B2 (en) | 2017-09-25 | 2021-04-21 | トヨタ自動車株式会社 | Plasma processing equipment |
DE102018132700A1 (en) * | 2018-12-18 | 2020-06-18 | Krones Ag | Device and method for coating and in particular plasma coating of containers |
US11521831B2 (en) | 2019-05-21 | 2022-12-06 | Reno Technologies, Inc. | Impedance matching network and method with reduced memory requirements |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
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US4500408A (en) * | 1983-07-19 | 1985-02-19 | Varian Associates, Inc. | Apparatus for and method of controlling sputter coating |
US5366553A (en) * | 1985-11-07 | 1994-11-22 | Burford Corporation | Sequence controller |
US4827219A (en) * | 1988-01-07 | 1989-05-02 | The Regents Of The University Of California | Remotely adjustable MRI RF coil impedance matching circuit with mutualy coupled resonators |
DE3923661A1 (en) * | 1989-07-18 | 1991-01-24 | Leybold Ag | CIRCUIT ARRANGEMENT FOR ADJUSTING THE IMPEDANCE OF A PLASMA LINE TO A HIGH FREQUENCY GENERATOR |
US5057185A (en) * | 1990-09-27 | 1991-10-15 | Consortium For Surface Processing, Inc. | Triode plasma reactor with phase modulated plasma control |
US5128602A (en) * | 1991-04-26 | 1992-07-07 | Metcal, Inc. | Parallel supply for multiple loads from a single power supply |
US6514376B1 (en) * | 1991-06-27 | 2003-02-04 | Applied Materials Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
WO2004083486A1 (en) * | 1993-03-23 | 2004-09-30 | Atsushi Yamagami | Method and apparatus for plasma cdv by use of ultrashort wave |
CH687987A5 (en) * | 1993-05-03 | 1997-04-15 | Balzers Hochvakuum | A process for the increase of the deposition rate in a plasma discharge space and plasma chamber. |
TW273067B (en) * | 1993-10-04 | 1996-03-21 | Tokyo Electron Co Ltd | |
US5556549A (en) * | 1994-05-02 | 1996-09-17 | Lsi Logic Corporation | Power control and delivery in plasma processing equipment |
AU2003195A (en) * | 1994-06-21 | 1996-01-04 | Boc Group, Inc., The | Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines |
JPH08236294A (en) * | 1995-02-28 | 1996-09-13 | Jeol Ltd | High frequency plasma applied device |
US6042686A (en) * | 1995-06-30 | 2000-03-28 | Lam Research Corporation | Power segmented electrode |
US6095084A (en) * | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
US5783102A (en) * | 1996-02-05 | 1998-07-21 | International Business Machines Corporation | Negative ion deductive source for etching high aspect ratio structures |
US5770922A (en) * | 1996-07-22 | 1998-06-23 | Eni Technologies, Inc. | Baseband V-I probe |
US6214162B1 (en) * | 1996-09-27 | 2001-04-10 | Tokyo Electron Limited | Plasma processing apparatus |
US5889252A (en) * | 1996-12-19 | 1999-03-30 | Lam Research Corporation | Method of and apparatus for independently controlling electric parameters of an impedance matching network |
JP3301357B2 (en) * | 1997-08-26 | 2002-07-15 | 株式会社村田製作所 | Parallel plate type plasma CVD equipment |
US6251216B1 (en) * | 1997-12-17 | 2001-06-26 | Matsushita Electronics Corporation | Apparatus and method for plasma processing |
US6905578B1 (en) * | 1998-04-27 | 2005-06-14 | Cvc Products, Inc. | Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure |
JP2961103B1 (en) * | 1998-04-28 | 1999-10-12 | 三菱重工業株式会社 | Plasma chemical vapor deposition equipment |
US6101971A (en) * | 1998-05-13 | 2000-08-15 | Axcelis Technologies, Inc. | Ion implantation control using charge collection, optical emission spectroscopy and mass analysis |
AU725612B2 (en) * | 1998-05-29 | 2000-10-12 | Mitsubishi Heavy Industries, Ltd. | Plasma CVD apparatus |
US6632322B1 (en) * | 2000-06-30 | 2003-10-14 | Lam Research Corporation | Switched uniformity control |
-
2001
- 2001-08-06 WO PCT/US2001/024491 patent/WO2002013225A2/en active Application Filing
- 2001-08-06 AU AU2001279189A patent/AU2001279189A1/en not_active Abandoned
- 2001-08-08 TW TW090119395A patent/TW511397B/en active
-
2003
- 2003-02-07 US US10/359,557 patent/US20030137251A1/en not_active Abandoned
-
2004
- 2004-03-05 US US10/793,253 patent/US7164236B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040168770A1 (en) | 2004-09-02 |
WO2002013225A2 (en) | 2002-02-14 |
US7164236B2 (en) | 2007-01-16 |
TW511397B (en) | 2002-11-21 |
US20030137251A1 (en) | 2003-07-24 |
WO2002013225A3 (en) | 2002-08-01 |
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