AU2003261790A1 - Plasma processing method and plasma processing device - Google Patents

Plasma processing method and plasma processing device

Info

Publication number
AU2003261790A1
AU2003261790A1 AU2003261790A AU2003261790A AU2003261790A1 AU 2003261790 A1 AU2003261790 A1 AU 2003261790A1 AU 2003261790 A AU2003261790 A AU 2003261790A AU 2003261790 A AU2003261790 A AU 2003261790A AU 2003261790 A1 AU2003261790 A1 AU 2003261790A1
Authority
AU
Australia
Prior art keywords
plasma processing
processing device
processing method
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003261790A
Inventor
Kimihiro Higuchi
Shin Okamoto
Toshihiko Shindo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003261790A1 publication Critical patent/AU2003261790A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004Charge control of objects or beams
    • H01J2237/0041Neutralising arrangements
    • H01J2237/0044Neutralising arrangements of objects being observed or treated

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
AU2003261790A 2002-08-30 2003-08-28 Plasma processing method and plasma processing device Abandoned AU2003261790A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002256096A JP4322484B2 (en) 2002-08-30 2002-08-30 Plasma processing method and plasma processing apparatus
JP2002/256096 2002-08-30
PCT/JP2003/010937 WO2004021427A1 (en) 2002-08-30 2003-08-28 Plasma processing method and plasma processing device

Publications (1)

Publication Number Publication Date
AU2003261790A1 true AU2003261790A1 (en) 2004-03-19

Family

ID=31972935

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003261790A Abandoned AU2003261790A1 (en) 2002-08-30 2003-08-28 Plasma processing method and plasma processing device

Country Status (6)

Country Link
JP (1) JP4322484B2 (en)
KR (1) KR100782621B1 (en)
CN (1) CN100414672C (en)
AU (1) AU2003261790A1 (en)
TW (1) TW200410332A (en)
WO (1) WO2004021427A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205250B2 (en) * 2003-03-18 2007-04-17 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US7316785B2 (en) * 2004-06-30 2008-01-08 Lam Research Corporation Methods and apparatus for the optimization of etch resistance in a plasma processing system
JP4704087B2 (en) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
CN100416758C (en) * 2005-12-09 2008-09-03 北京北方微电子基地设备工艺研究中心有限责任公司 Method for releasing chip static electricity thoroughly in chip etching equipment
CN101740340B (en) * 2008-11-25 2011-12-21 北京北方微电子基地设备工艺研究中心有限责任公司 Reaction chamber and semiconductor processing device
JP2010199310A (en) * 2009-02-25 2010-09-09 Sharp Corp Plasma etching method
JP5835985B2 (en) * 2010-09-16 2015-12-24 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
WO2014049915A1 (en) * 2012-09-26 2014-04-03 シャープ株式会社 Substrate treatment device, substrate treatment method, and production method for semiconductor device
WO2015129719A1 (en) * 2014-02-28 2015-09-03 株式会社 アルバック Plasma etching method, plasma etching method, plasma processing method, and plasma processing device
JP6558901B2 (en) 2015-01-06 2019-08-14 東京エレクトロン株式会社 Plasma processing method
JP6595334B2 (en) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ Plasma processing apparatus and plasma processing method
CN108701586B (en) * 2016-02-26 2022-09-30 玛特森技术公司 Stripping treatment method for implanted photoresist
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
JP7482657B2 (en) 2020-03-17 2024-05-14 東京エレクトロン株式会社 CLEANING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
CN113154610A (en) * 2021-05-31 2021-07-23 北京十三和科技发展有限公司 Air purifier with temperature adjusting function

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318552A (en) * 1993-05-10 1994-11-15 Nissin Electric Co Ltd Plasma processing and its apparatus
JPH1027780A (en) * 1996-07-10 1998-01-27 Nec Corp Plasma treating method
JP3907256B2 (en) * 1997-01-10 2007-04-18 芝浦メカトロニクス株式会社 Electrostatic chuck device for vacuum processing equipment
KR100635975B1 (en) * 2000-02-14 2006-10-20 동경 엘렉트론 주식회사 Apparatus and method for plasma treatment

Also Published As

Publication number Publication date
CN100414672C (en) 2008-08-27
JP2004095909A (en) 2004-03-25
TW200410332A (en) 2004-06-16
JP4322484B2 (en) 2009-09-02
KR100782621B1 (en) 2007-12-06
WO2004021427A1 (en) 2004-03-11
TWI324361B (en) 2010-05-01
KR20050058464A (en) 2005-06-16
CN1679148A (en) 2005-10-05

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase