AU2003261790A1 - Plasma processing method and plasma processing device - Google Patents
Plasma processing method and plasma processing deviceInfo
- Publication number
- AU2003261790A1 AU2003261790A1 AU2003261790A AU2003261790A AU2003261790A1 AU 2003261790 A1 AU2003261790 A1 AU 2003261790A1 AU 2003261790 A AU2003261790 A AU 2003261790A AU 2003261790 A AU2003261790 A AU 2003261790A AU 2003261790 A1 AU2003261790 A1 AU 2003261790A1
- Authority
- AU
- Australia
- Prior art keywords
- plasma processing
- processing device
- processing method
- plasma
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000003672 processing method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
- H01J2237/0044—Neutralising arrangements of objects being observed or treated
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002256096A JP4322484B2 (en) | 2002-08-30 | 2002-08-30 | Plasma processing method and plasma processing apparatus |
JP2002/256096 | 2002-08-30 | ||
PCT/JP2003/010937 WO2004021427A1 (en) | 2002-08-30 | 2003-08-28 | Plasma processing method and plasma processing device |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003261790A1 true AU2003261790A1 (en) | 2004-03-19 |
Family
ID=31972935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003261790A Abandoned AU2003261790A1 (en) | 2002-08-30 | 2003-08-28 | Plasma processing method and plasma processing device |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP4322484B2 (en) |
KR (1) | KR100782621B1 (en) |
CN (1) | CN100414672C (en) |
AU (1) | AU2003261790A1 (en) |
TW (1) | TW200410332A (en) |
WO (1) | WO2004021427A1 (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7205250B2 (en) * | 2003-03-18 | 2007-04-17 | Matsushita Electric Industrial Co., Ltd. | Plasma processing method and apparatus |
US7316785B2 (en) * | 2004-06-30 | 2008-01-08 | Lam Research Corporation | Methods and apparatus for the optimization of etch resistance in a plasma processing system |
JP4704087B2 (en) * | 2005-03-31 | 2011-06-15 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
CN100416758C (en) * | 2005-12-09 | 2008-09-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for releasing chip static electricity thoroughly in chip etching equipment |
CN101740340B (en) * | 2008-11-25 | 2011-12-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing device |
JP2010199310A (en) * | 2009-02-25 | 2010-09-09 | Sharp Corp | Plasma etching method |
JP5835985B2 (en) * | 2010-09-16 | 2015-12-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
US20120154974A1 (en) * | 2010-12-16 | 2012-06-21 | Applied Materials, Inc. | High efficiency electrostatic chuck assembly for semiconductor wafer processing |
WO2014049915A1 (en) * | 2012-09-26 | 2014-04-03 | シャープ株式会社 | Substrate treatment device, substrate treatment method, and production method for semiconductor device |
WO2015129719A1 (en) * | 2014-02-28 | 2015-09-03 | 株式会社 アルバック | Plasma etching method, plasma etching method, plasma processing method, and plasma processing device |
JP6558901B2 (en) | 2015-01-06 | 2019-08-14 | 東京エレクトロン株式会社 | Plasma processing method |
JP6595334B2 (en) * | 2015-12-28 | 2019-10-23 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and plasma processing method |
CN108701586B (en) * | 2016-02-26 | 2022-09-30 | 玛特森技术公司 | Stripping treatment method for implanted photoresist |
US10535505B2 (en) * | 2016-11-11 | 2020-01-14 | Lam Research Corporation | Plasma light up suppression |
US20190119815A1 (en) * | 2017-10-24 | 2019-04-25 | Applied Materials, Inc. | Systems and processes for plasma filtering |
JP7482657B2 (en) | 2020-03-17 | 2024-05-14 | 東京エレクトロン株式会社 | CLEANING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
CN113154610A (en) * | 2021-05-31 | 2021-07-23 | 北京十三和科技发展有限公司 | Air purifier with temperature adjusting function |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06318552A (en) * | 1993-05-10 | 1994-11-15 | Nissin Electric Co Ltd | Plasma processing and its apparatus |
JPH1027780A (en) * | 1996-07-10 | 1998-01-27 | Nec Corp | Plasma treating method |
JP3907256B2 (en) * | 1997-01-10 | 2007-04-18 | 芝浦メカトロニクス株式会社 | Electrostatic chuck device for vacuum processing equipment |
KR100635975B1 (en) * | 2000-02-14 | 2006-10-20 | 동경 엘렉트론 주식회사 | Apparatus and method for plasma treatment |
-
2002
- 2002-08-30 JP JP2002256096A patent/JP4322484B2/en not_active Expired - Fee Related
-
2003
- 2003-08-28 KR KR1020057003051A patent/KR100782621B1/en active IP Right Grant
- 2003-08-28 WO PCT/JP2003/010937 patent/WO2004021427A1/en active Application Filing
- 2003-08-28 AU AU2003261790A patent/AU2003261790A1/en not_active Abandoned
- 2003-08-28 CN CNB038206455A patent/CN100414672C/en not_active Expired - Lifetime
- 2003-08-29 TW TW092123978A patent/TW200410332A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN100414672C (en) | 2008-08-27 |
JP2004095909A (en) | 2004-03-25 |
TW200410332A (en) | 2004-06-16 |
JP4322484B2 (en) | 2009-09-02 |
KR100782621B1 (en) | 2007-12-06 |
WO2004021427A1 (en) | 2004-03-11 |
TWI324361B (en) | 2010-05-01 |
KR20050058464A (en) | 2005-06-16 |
CN1679148A (en) | 2005-10-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |