ATE554196T1 - Vertikal durchströmte drehscheibenreaktoren und behandlungsverfahren damit - Google Patents

Vertikal durchströmte drehscheibenreaktoren und behandlungsverfahren damit

Info

Publication number
ATE554196T1
ATE554196T1 AT03818356T AT03818356T ATE554196T1 AT E554196 T1 ATE554196 T1 AT E554196T1 AT 03818356 T AT03818356 T AT 03818356T AT 03818356 T AT03818356 T AT 03818356T AT E554196 T1 ATE554196 T1 AT E554196T1
Authority
AT
Austria
Prior art keywords
gas
axis
gases
reactor
disk
Prior art date
Application number
AT03818356T
Other languages
English (en)
Inventor
Michael Murphy
Richard Hoffman
Jonathan Cruel
Lev Kadinski
Jeffrey Ramer
Eric Armour
Original Assignee
Veeco Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instr Inc filed Critical Veeco Instr Inc
Application granted granted Critical
Publication of ATE554196T1 publication Critical patent/ATE554196T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Mixers Of The Rotary Stirring Type (AREA)
  • Nozzles (AREA)
  • Automatic Disk Changers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT03818356T 2003-08-20 2003-08-20 Vertikal durchströmte drehscheibenreaktoren und behandlungsverfahren damit ATE554196T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2003/026112 WO2005019496A1 (en) 2003-08-20 2003-08-20 Alkyl push flow for vertical flow rotating disk reactors

Publications (1)

Publication Number Publication Date
ATE554196T1 true ATE554196T1 (de) 2012-05-15

Family

ID=34215342

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03818356T ATE554196T1 (de) 2003-08-20 2003-08-20 Vertikal durchströmte drehscheibenreaktoren und behandlungsverfahren damit

Country Status (9)

Country Link
US (5) US20070071896A1 (de)
EP (1) EP1660697B1 (de)
JP (1) JP4714021B2 (de)
KR (2) KR101188977B1 (de)
CN (1) CN100545303C (de)
AT (1) ATE554196T1 (de)
AU (1) AU2003265542A1 (de)
TW (2) TWI261310B (de)
WO (1) WO2005019496A1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070071896A1 (en) 2003-08-20 2007-03-29 Veeco Instruments Inc. Alkyl push flow for vertical flow rotating disk reactors
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
KR101443665B1 (ko) * 2006-10-06 2014-10-02 비코 인스트루먼츠 인코포레이티드 수직 흐름 회전 디스크 리액터를 위한 밀도 매칭 알킬 압출 흐름
WO2008088743A1 (en) 2007-01-12 2008-07-24 Veeco Instruments Inc. Gas treatment systems
DE102007010286B4 (de) * 2007-03-02 2013-09-05 Freiberger Compound Materials Gmbh Verfahren zum Herstellen eines Verbindungshalbleiterwerkstoffs, einer III-N-Schicht oder eines III-N-Bulkkristalls, Reaktor zur Herstellung des Verbindungshalbleiterwerkstoffs, Verbindungshalbleiterwerkstoff, III-N-Bulkkristall und III-N-Kristallschicht
DE202007019184U1 (de) * 2007-09-11 2010-12-30 Maschinenfabrik Reinhausen Gmbh Vorrichtung zur Behandlung oder Beschichtung von Oberflächen
WO2009049020A2 (en) 2007-10-11 2009-04-16 Valence Process Equipment, Inc. Chemical vapor deposition reactor
KR100994920B1 (ko) * 2008-06-05 2010-11-17 주식회사 소로나 기상 자기조립 단분자막 코팅장치
US8895107B2 (en) 2008-11-06 2014-11-25 Veeco Instruments Inc. Chemical vapor deposition with elevated temperature gas injection
US9070818B2 (en) * 2009-07-17 2015-06-30 Soitec Methods and structures for bonding elements
KR101108879B1 (ko) 2009-08-31 2012-01-30 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
KR101625078B1 (ko) * 2009-09-02 2016-05-27 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
JP5689294B2 (ja) * 2010-11-25 2015-03-25 東京エレクトロン株式会社 処理装置
US9303319B2 (en) * 2010-12-17 2016-04-05 Veeco Instruments Inc. Gas injection system for chemical vapor deposition using sequenced valves
US8728239B2 (en) * 2011-07-29 2014-05-20 Asm America, Inc. Methods and apparatus for a gas panel with constant gas flow
JP6038618B2 (ja) * 2011-12-15 2016-12-07 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
KR101929481B1 (ko) * 2012-03-26 2018-12-14 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
US20130255784A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Gas delivery systems and methods of use thereof
AU2013289866B2 (en) * 2012-07-13 2015-04-02 Gallium Enterprises Pty Ltd Apparatus and method for film formation
JP2015056632A (ja) * 2013-09-13 2015-03-23 東京エレクトロン株式会社 シリコン酸化膜の製造方法
WO2016052333A1 (ja) * 2014-09-30 2016-04-07 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び記録媒体
CN107723790B (zh) * 2016-08-12 2020-07-07 上海新昇半导体科技有限公司 一种外延设备、设备制作方法及外延方法
JP6740799B2 (ja) * 2016-08-17 2020-08-19 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
RU2673515C2 (ru) 2017-02-02 2018-11-27 Общество С Ограниченной Ответственностью "Монолюм" Способ подачи газов в реактор для выращивания эпитаксиальных структур на основе нитридов металлов iii группы и устройство для его осуществления
US20180245216A1 (en) * 2017-02-28 2018-08-30 Tokyo Electron Limited Film forming apparatus
JP6856576B2 (ja) * 2018-05-25 2021-04-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
JP7024740B2 (ja) * 2019-01-16 2022-02-24 株式会社デンソー 半導体製造装置
JP6987821B2 (ja) * 2019-09-26 2022-01-05 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
EP4067532A4 (de) * 2019-11-27 2023-08-16 Sino Nitride Semiconductor Co, Ltd Linearer sprühkopf für gan-materialwachstum
CN114277360B (zh) * 2021-12-29 2023-11-24 季华实验室 一种化学气相沉积装置

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4010045A (en) * 1973-12-13 1977-03-01 Ruehrwein Robert A Process for production of III-V compound crystals
US4369031A (en) * 1981-09-15 1983-01-18 Thermco Products Corporation Gas control system for chemical vapor deposition system
US4579609A (en) 1984-06-08 1986-04-01 Massachusetts Institute Of Technology Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition
JPH0645890B2 (ja) * 1985-12-18 1994-06-15 キヤノン株式会社 堆積膜形成法
US4741354A (en) * 1987-04-06 1988-05-03 Spire Corporation Radial gas manifold
JPS6447017A (en) * 1987-08-18 1989-02-21 Fujitsu Ltd Manufacture of semiconductor device
JP2668687B2 (ja) 1987-11-27 1997-10-27 富士通株式会社 Ｃ ｖ ｄ 装 置
JPH0296324A (ja) * 1988-09-30 1990-04-09 Fujitsu Ltd 半導体装置の製造方法およびそれに用いる気相成長装置
US4980204A (en) * 1987-11-27 1990-12-25 Fujitsu Limited Metal organic chemical vapor deposition method with controlled gas flow rate
DE68904230T2 (de) 1988-04-29 1993-05-06 Hughes Aircraft Co System zur automatischen kontrolle der deposition einer schicht in real-zeit.
JPH02187018A (ja) 1989-01-13 1990-07-23 Mitsubishi Electric Corp 化学気相成長装置
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5106453A (en) * 1990-01-29 1992-04-21 At&T Bell Laboratories MOCVD method and apparatus
JPH03262116A (ja) 1990-03-13 1991-11-21 Fujitsu Ltd Ｃｖｄ装置
US5091320A (en) * 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
US5269847A (en) * 1990-08-23 1993-12-14 Applied Materials, Inc. Variable rate distribution gas flow reaction chamber
US5324386A (en) * 1991-03-19 1994-06-28 Fujitsu Limited Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor
JP3215498B2 (ja) 1992-05-27 2001-10-09 東京エレクトロン株式会社 成膜装置
JP2790009B2 (ja) 1992-12-11 1998-08-27 信越半導体株式会社 シリコンエピタキシャル層の成長方法および成長装置
US5709745A (en) 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
US5393232A (en) * 1993-11-15 1995-02-28 Haines; William C. Visual aid system
KR0158780B1 (ko) 1994-12-22 1998-11-16 가네꼬 히사시 화학 증착법에 의한 박막형성 방법 및 장치
KR100201386B1 (ko) * 1995-10-28 1999-06-15 구본준 화학기상증착장비의 반응가스 분사장치
US5843234A (en) * 1996-05-10 1998-12-01 Memc Electronic Materials, Inc. Method and apparatus for aiming a barrel reactor nozzle
US5976261A (en) * 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
KR20000069146A (ko) * 1996-11-27 2000-11-25 로벤 에프. 리차드 쥬니어 화학 기상 증착 장치
US5956148A (en) * 1996-12-20 1999-09-21 Texas Instruments Incorporated Semiconductor surface measurement system and method
KR100505310B1 (ko) * 1998-05-13 2005-08-04 동경 엘렉트론 주식회사 성막 장치 및 방법
US6289842B1 (en) * 1998-06-22 2001-09-18 Structured Materials Industries Inc. Plasma enhanced chemical vapor deposition system
JP4056144B2 (ja) * 1998-09-10 2008-03-05 株式会社エフオーアイ プラズマ処理装置
JP3556483B2 (ja) * 1998-09-18 2004-08-18 鐘淵化学工業株式会社 シリコン系薄膜光電変換装置の製造方法
US6280581B1 (en) * 1998-12-29 2001-08-28 David Cheng Method and apparatus for electroplating films on semiconductor wafers
US6499425B1 (en) * 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
JP2000286251A (ja) 1999-03-31 2000-10-13 Japan Storage Battery Co Ltd 紫外線処理装置
US6480286B1 (en) * 1999-03-31 2002-11-12 Matsushita Electric Inudstrial Co., Ltd. Method and apparatus for measuring thickness variation of a thin sheet material, and probe reflector used in the apparatus
US6511539B1 (en) * 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
DE10003758A1 (de) * 2000-01-28 2001-08-02 Aixtron Gmbh Vorrichtung und Verfahren zum Abscheiden wenigstens eines in flüssiger oder gelöster Form vorliegenden Prekursors
JP4409714B2 (ja) * 2000-04-07 2010-02-03 東京エレクトロン株式会社 枚葉式熱処理装置
US6534332B2 (en) * 2000-04-21 2003-03-18 The Regents Of The University Of California Method of growing GaN films with a low density of structural defects using an interlayer
JP2001351864A (ja) * 2000-06-09 2001-12-21 Toshiba Ceramics Co Ltd 薄膜気相成長方法及び該方法に用いられる薄膜気相成長装置
JP2002064084A (ja) * 2000-08-17 2002-02-28 Sumitomo Metal Ind Ltd プラズマ処理用ガス導入装置およびプラズマ処理方法
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP2002155366A (ja) * 2000-11-15 2002-05-31 Tokyo Electron Ltd 枚葉式熱処理方法および枚葉式熱処理装置
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6902623B2 (en) * 2001-06-07 2005-06-07 Veeco Instruments Inc. Reactor having a movable shutter
US20030198754A1 (en) * 2001-07-16 2003-10-23 Ming Xi Aluminum oxide chamber and process
US6730354B2 (en) * 2001-08-08 2004-05-04 Agilent Technologies, Inc. Forming ferroelectric Pb(Zr,Ti)O3 films
US7524532B2 (en) * 2002-04-22 2009-04-28 Aixtron Ag Process for depositing thin layers on a substrate in a process chamber of adjustable height
US7160577B2 (en) * 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US6887523B2 (en) * 2002-12-20 2005-05-03 Sharp Laboratories Of America, Inc. Method for metal oxide thin film deposition via MOCVD
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
US20070071896A1 (en) * 2003-08-20 2007-03-29 Veeco Instruments Inc. Alkyl push flow for vertical flow rotating disk reactors
US20050045498A1 (en) 2003-08-25 2005-03-03 Kimberly-Clark Worldwide, Inc. Cold pack
KR101309334B1 (ko) 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터
US8092599B2 (en) * 2007-07-10 2012-01-10 Veeco Instruments Inc. Movable injectors in rotating disc gas reactors
KR20090022557A (ko) * 2007-08-31 2009-03-04 삼성전자주식회사 고밀도 플라즈마 화학 기상 증착 장치 및 그를 이용한절연막 형성 방법
US20090236447A1 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus for controlling gas injection in process chamber
US9303319B2 (en) * 2010-12-17 2016-04-05 Veeco Instruments Inc. Gas injection system for chemical vapor deposition using sequenced valves

Also Published As

Publication number Publication date
US8980000B2 (en) 2015-03-17
KR20060079198A (ko) 2006-07-05
TWI375731B (en) 2012-11-01
US9593434B2 (en) 2017-03-14
JP2007521633A (ja) 2007-08-02
EP1660697B1 (de) 2012-04-18
US20070134419A1 (en) 2007-06-14
CN1849410A (zh) 2006-10-18
US20140224178A1 (en) 2014-08-14
JP4714021B2 (ja) 2011-06-29
TW200511394A (en) 2005-03-16
KR20110120964A (ko) 2011-11-04
US20070071896A1 (en) 2007-03-29
EP1660697A1 (de) 2006-05-31
US20150225875A1 (en) 2015-08-13
CN100545303C (zh) 2009-09-30
AU2003265542A1 (en) 2005-03-10
TW200825198A (en) 2008-06-16
WO2005019496A1 (en) 2005-03-03
US20180237943A1 (en) 2018-08-23
TWI261310B (en) 2006-09-01
EP1660697A4 (de) 2009-06-03
US9982362B2 (en) 2018-05-29
US10364509B2 (en) 2019-07-30
KR101188977B1 (ko) 2012-10-08
KR101185298B1 (ko) 2012-09-21

Similar Documents

Publication Publication Date Title
ATE554196T1 (de) Vertikal durchströmte drehscheibenreaktoren und behandlungsverfahren damit
US6797069B2 (en) Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
JP4673881B2 (ja) 結晶層堆積装置および結晶層堆積方法
US8152924B2 (en) CVD reactor comprising a gas inlet member
Zhang et al. Influencing factors of GaN growth uniformity through orthogonal test analysis
TW201027599A (en) MOCVD reactor having cylindrical gas inlet element
AU2003217042A1 (en) Improvements in cooling of a data centre
JP2016184734A (ja) エピタキシャル成長装置用のチャンバ構成要素
CN101914762B (zh) 一种用于金属有机物化学气相沉积设备的进气喷头结构
JP7503155B2 (ja) 半導体成長装置及びその動作方法
CN102230165A (zh) 化学气相沉积外延设备用的喷淋头结构
US20190032244A1 (en) Chemical vapor deposition system
Deng et al. Late transition metal catalysts with chelating amines for olefin polymerization
US9404182B2 (en) Multi-wafer reactor
Radhakrishnan et al. Influence of alkylaluminium activators and mixtures thereof on ethylene polymerization with a tridentate bis (imino) pyridinyliron complex
JP5409413B2 (ja) Ｉｉｉ族窒化物半導体の気相成長装置
Gurary et al. Thermal and flow issues in the design of metalorganic chemical vapor deposition reactors
CN110093592A (zh) 应用于化学气相沉积***的气体喷头
CN105803425B (zh) 金属有机化合物气相沉积反应装置的反应基座
Liao et al. Modeling and designing a new gas injection diffusion system for metalorganic chemical vapor deposition
JP3867616B2 (ja) 半導体製造装置および方法
CN103014664B (zh) 化学气相沉积装置
KR101443665B1 (ko) 수직 흐름 회전 디스크 리액터를 위한 밀도 매칭 알킬 압출 흐름
JPS6315412A (ja) 化学気相成長方法
JP2003017417A (ja) エピタキシャルウェハ製造装置