ATE537484T1 - Systeme und verfahren zur uv-lithographie - Google Patents
Systeme und verfahren zur uv-lithographieInfo
- Publication number
- ATE537484T1 ATE537484T1 AT07447013T AT07447013T ATE537484T1 AT E537484 T1 ATE537484 T1 AT E537484T1 AT 07447013 T AT07447013 T AT 07447013T AT 07447013 T AT07447013 T AT 07447013T AT E537484 T1 ATE537484 T1 AT E537484T1
- Authority
- AT
- Austria
- Prior art keywords
- lithographic
- mask
- design
- lithographic mask
- designing
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- 238000001459 lithography Methods 0.000 title 1
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07447013A EP1962138B1 (de) | 2007-02-23 | 2007-02-23 | Systeme und Verfahren zur UV-Lithographie |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE537484T1 true ATE537484T1 (de) | 2011-12-15 |
Family
ID=38180134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT07447013T ATE537484T1 (de) | 2007-02-23 | 2007-02-23 | Systeme und verfahren zur uv-lithographie |
Country Status (5)
Country | Link |
---|---|
US (1) | US8006202B2 (de) |
EP (1) | EP1962138B1 (de) |
JP (1) | JP2008219004A (de) |
KR (1) | KR101472902B1 (de) |
AT (1) | ATE537484T1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2007287A (en) * | 2010-09-14 | 2012-03-15 | Asml Netherlands Bv | Correction for flare effects in lithography system. |
US8601404B2 (en) * | 2011-03-14 | 2013-12-03 | Synopsys, Inc. | Modeling EUV lithography shadowing effect |
JP2013115304A (ja) * | 2011-11-30 | 2013-06-10 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
NL2013630A (en) * | 2013-11-05 | 2015-05-07 | Asml Netherlands Bv | Method of characterising, method of forming a model, method of simulating, mask manufacturing method and device manufacturing method. |
KR102225619B1 (ko) | 2015-02-10 | 2021-03-12 | 한화테크윈 주식회사 | 고속직렬데이터수신장치 |
KR102550350B1 (ko) | 2017-09-08 | 2023-07-04 | 에이에스엠엘 네델란즈 비.브이. | 기계 학습 보조 광 근접 오차 보정을 위한 트레이닝 방법들 |
DE102017219217B4 (de) * | 2017-10-26 | 2021-03-25 | Carl Zeiss Smt Gmbh | Masken für die Mikrolithographie, Verfahren zur Bestimmung von Kantenpositionen der Bilder der Strukturen einer derartigen Maske und System zur Durchführung eines derartigen Verfahrens |
WO2019218698A1 (zh) * | 2018-05-15 | 2019-11-21 | Xiong Xiangwen | 3D立体照射掩膜版(Mask)的极紫外光刻(EUVL)的高产量(HVM)曝光技术及***装置 |
TWI794544B (zh) | 2018-10-09 | 2023-03-01 | 荷蘭商Asml荷蘭公司 | 用於高數值孔徑穿縫源光罩最佳化之方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5656399A (en) * | 1996-01-22 | 1997-08-12 | Lucent Technologies Inc. | Process for making an x-ray mask |
US5798936A (en) * | 1996-06-21 | 1998-08-25 | Avant| Corporation | Congestion-driven placement method and computer-implemented integrated-circuit design tool |
JP4302809B2 (ja) | 1999-02-12 | 2009-07-29 | 富士通マイクロエレクトロニクス株式会社 | リソグラフィ用データ補正装置及びその装置での処理をコンピュータにて行なわせるためのプログラムを格納した記録媒体 |
US6370673B1 (en) * | 1999-03-22 | 2002-04-09 | Synopsys, Inc. | Method and system for high speed detailed placement of cells within an integrated circuit design |
DE10123768C2 (de) | 2001-05-16 | 2003-04-30 | Infineon Technologies Ag | Verfahren zur Herstellung einer lithographischen Reflexionsmaske insbesondere für die Strukturierung eines Halbleiterwafers sowie Reflexionsmaske |
DE10134231B4 (de) | 2001-07-13 | 2006-06-14 | Infineon Technologies Ag | EUV-Reflektionsmaske |
US7197734B1 (en) * | 2002-07-12 | 2007-03-27 | Altera Corporation | Method and apparatus for designing systems using logic regions |
US7042550B2 (en) | 2002-11-28 | 2006-05-09 | Asml Netherlands B.V. | Device manufacturing method and computer program |
US7022443B2 (en) | 2003-02-12 | 2006-04-04 | Intel Corporation | Compensation of reflective mask effects in lithography systems |
US7594204B1 (en) * | 2003-10-06 | 2009-09-22 | Altera Corporation | Method and apparatus for performing layout-driven optimizations on field programmable gate arrays |
SG124407A1 (en) * | 2005-02-03 | 2006-08-30 | Asml Netherlands Bv | Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus |
EP1907957A4 (de) * | 2005-06-29 | 2013-03-20 | Otrsotech Ltd Liability Company | Verfahren und systeme zur plazierung |
US7752588B2 (en) * | 2005-06-29 | 2010-07-06 | Subhasis Bose | Timing driven force directed placement flow |
US7574685B1 (en) * | 2006-04-24 | 2009-08-11 | Cadence Design Systems, Inc. | Method, system, and article of manufacture for reducing via failures in an integrated circuit design |
US8332793B2 (en) * | 2006-05-18 | 2012-12-11 | Otrsotech, Llc | Methods and systems for placement and routing |
-
2007
- 2007-02-23 AT AT07447013T patent/ATE537484T1/de active
- 2007-02-23 EP EP07447013A patent/EP1962138B1/de active Active
-
2008
- 2008-02-20 JP JP2008038841A patent/JP2008219004A/ja active Pending
- 2008-02-21 US US12/035,343 patent/US8006202B2/en active Active
- 2008-02-22 KR KR1020080016368A patent/KR101472902B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2008219004A (ja) | 2008-09-18 |
US8006202B2 (en) | 2011-08-23 |
EP1962138A1 (de) | 2008-08-27 |
KR20080078608A (ko) | 2008-08-27 |
US20080229273A1 (en) | 2008-09-18 |
EP1962138B1 (de) | 2011-12-14 |
KR101472902B1 (ko) | 2014-12-16 |
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