ATE536263T1 - Verfahren zur plasmaverstärkten verbindung und durch plasmaverstärkte verbindung erzeugte verbundstrukturen - Google Patents
Verfahren zur plasmaverstärkten verbindung und durch plasmaverstärkte verbindung erzeugte verbundstrukturenInfo
- Publication number
- ATE536263T1 ATE536263T1 AT05809060T AT05809060T ATE536263T1 AT E536263 T1 ATE536263 T1 AT E536263T1 AT 05809060 T AT05809060 T AT 05809060T AT 05809060 T AT05809060 T AT 05809060T AT E536263 T1 ATE536263 T1 AT E536263T1
- Authority
- AT
- Austria
- Prior art keywords
- plasma
- reinforced bonding
- composite structures
- structures produced
- bonding
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 229910010272 inorganic material Inorganic materials 0.000 abstract 1
- 239000011147 inorganic material Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/22—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of impact or pressure on a printing material or impression-transfer material
- B41J2/23—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of impact or pressure on a printing material or impression-transfer material using print wires
- B41J2/235—Print head assemblies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01018—Argon [Ar]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01024—Chromium [Cr]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01078—Platinum [Pt]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Micromachines (AREA)
- Ceramic Products (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62206204P | 2004-10-26 | 2004-10-26 | |
US10/977,141 US7563691B2 (en) | 2004-10-29 | 2004-10-29 | Method for plasma enhanced bonding and bonded structures formed by plasma enhanced bonding |
PCT/US2005/035772 WO2006047052A1 (en) | 2004-10-26 | 2005-10-04 | Method for plasma enhanced bonding and bonded structures formed by plasma enhanced bonding |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE536263T1 true ATE536263T1 (de) | 2011-12-15 |
Family
ID=35741794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05809060T ATE536263T1 (de) | 2004-10-26 | 2005-10-04 | Verfahren zur plasmaverstärkten verbindung und durch plasmaverstärkte verbindung erzeugte verbundstrukturen |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1812238B1 (de) |
JP (1) | JP2008518470A (de) |
KR (1) | KR101232504B1 (de) |
CN (1) | CN101048285B (de) |
AT (1) | ATE536263T1 (de) |
AU (1) | AU2005299977B2 (de) |
WO (1) | WO2006047052A1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101909893B (zh) * | 2008-01-09 | 2012-10-10 | 惠普开发有限公司 | 流体喷出盒、其制造方法和流体喷出方法 |
CN109664616A (zh) * | 2018-11-29 | 2019-04-23 | 佛山市南海永恒头盔制造有限公司 | 异形物体表面印刷喷头 |
WO2023188154A1 (ja) * | 2022-03-30 | 2023-10-05 | ヤマハロボティクスホールディングス株式会社 | 電子部品洗浄方法 |
CN117157737A (zh) * | 2022-03-30 | 2023-12-01 | 雅马哈智能机器控股株式会社 | 电子零件清洗装置 |
US20240203758A1 (en) * | 2022-03-30 | 2024-06-20 | Yamaha Robotics Holdings Co., Ltd. | Wafer cleaning apparatus and bonding system |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4337239A1 (de) * | 1993-10-30 | 1995-05-04 | Bayerische Motoren Werke Ag | Vorrichtung zur Steuerung der Kraftstoffeinspritzmenge bei Brennkraftmaschinen in Abhängigkeit vom Luftfluß in die Zylinder |
EP0651449B1 (de) * | 1993-11-01 | 2002-02-13 | Matsushita Electric Industrial Co., Ltd. | Elektronische Anordnung und Verfahren zur Herstellung |
JP3294934B2 (ja) * | 1994-03-11 | 2002-06-24 | キヤノン株式会社 | 半導体基板の作製方法及び半導体基板 |
JPH09314835A (ja) * | 1996-05-31 | 1997-12-09 | Kyocera Corp | インクジェットヘッドとその製造方法 |
US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
JP3796394B2 (ja) * | 2000-06-21 | 2006-07-12 | キヤノン株式会社 | 圧電素子の製造方法および液体噴射記録ヘッドの製造方法 |
JP4682415B2 (ja) * | 2000-11-06 | 2011-05-11 | 富士電機システムズ株式会社 | 陽極接合方法 |
US6555480B2 (en) * | 2001-07-31 | 2003-04-29 | Hewlett-Packard Development Company, L.P. | Substrate with fluidic channel and method of manufacturing |
US6793759B2 (en) * | 2001-10-09 | 2004-09-21 | Dow Corning Corporation | Method for creating adhesion during fabrication of electronic devices |
US6679587B2 (en) * | 2001-10-31 | 2004-01-20 | Hewlett-Packard Development Company, L.P. | Fluid ejection device with a composite substrate |
US20030136505A1 (en) * | 2002-01-18 | 2003-07-24 | Wimmer Phillip L. | Method of preparing a surface for adhesion |
JP2003273312A (ja) * | 2002-03-12 | 2003-09-26 | Taiyo Yuden Co Ltd | シリコンセラミックス複合モジュールの製造方法 |
-
2005
- 2005-10-04 AT AT05809060T patent/ATE536263T1/de active
- 2005-10-04 CN CN2005800364986A patent/CN101048285B/zh not_active Expired - Fee Related
- 2005-10-04 WO PCT/US2005/035772 patent/WO2006047052A1/en active Application Filing
- 2005-10-04 KR KR1020077009917A patent/KR101232504B1/ko active IP Right Grant
- 2005-10-04 JP JP2007538948A patent/JP2008518470A/ja active Pending
- 2005-10-04 EP EP05809060A patent/EP1812238B1/de not_active Not-in-force
- 2005-10-04 AU AU2005299977A patent/AU2005299977B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
CN101048285B (zh) | 2011-06-08 |
KR20070083885A (ko) | 2007-08-24 |
AU2005299977A1 (en) | 2006-05-04 |
KR101232504B1 (ko) | 2013-02-12 |
JP2008518470A (ja) | 2008-05-29 |
CN101048285A (zh) | 2007-10-03 |
EP1812238B1 (de) | 2011-12-07 |
AU2005299977B2 (en) | 2010-09-30 |
WO2006047052A1 (en) | 2006-05-04 |
EP1812238A1 (de) | 2007-08-01 |
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