ATE463845T1 - Dünnfilmtranistor-bauelement und diesbezügliches verfahren - Google Patents
Dünnfilmtranistor-bauelement und diesbezügliches verfahrenInfo
- Publication number
- ATE463845T1 ATE463845T1 AT02772725T AT02772725T ATE463845T1 AT E463845 T1 ATE463845 T1 AT E463845T1 AT 02772725 T AT02772725 T AT 02772725T AT 02772725 T AT02772725 T AT 02772725T AT E463845 T1 ATE463845 T1 AT E463845T1
- Authority
- AT
- Austria
- Prior art keywords
- tranistor
- component
- thin film
- related method
- substrates
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000012044 organic layer Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000032798 delamination Effects 0.000 abstract 1
- 238000000813 microcontact printing Methods 0.000 abstract 1
- 239000011368 organic material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Saccharide Compounds (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01203855 | 2001-10-11 | ||
PCT/IB2002/004169 WO2003034502A1 (en) | 2001-10-11 | 2002-10-10 | Thin film transistor device and method of manufacturing same |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE463845T1 true ATE463845T1 (de) | 2010-04-15 |
Family
ID=8181046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02772725T ATE463845T1 (de) | 2001-10-11 | 2002-10-10 | Dünnfilmtranistor-bauelement und diesbezügliches verfahren |
Country Status (8)
Country | Link |
---|---|
US (1) | US7282769B2 (de) |
EP (1) | EP1438753B1 (de) |
JP (1) | JP2005506704A (de) |
KR (1) | KR20040052226A (de) |
CN (1) | CN100367516C (de) |
AT (1) | ATE463845T1 (de) |
DE (1) | DE60235906D1 (de) |
WO (1) | WO2003034502A1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6661024B1 (en) * | 2002-07-02 | 2003-12-09 | Motorola, Inc. | Integrated circuit including field effect transistor and method of manufacture |
US7045884B2 (en) * | 2002-10-04 | 2006-05-16 | International Rectifier Corporation | Semiconductor device package |
JP4729843B2 (ja) * | 2003-10-15 | 2011-07-20 | 凸版印刷株式会社 | 薄膜トランジスタの製造方法 |
US7166867B2 (en) * | 2003-12-05 | 2007-01-23 | International Rectifier Corporation | III-nitride device with improved layout geometry |
US7768405B2 (en) * | 2003-12-12 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and manufacturing method thereof |
US7130234B2 (en) * | 2003-12-12 | 2006-10-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7405665B2 (en) * | 2003-12-19 | 2008-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, RFID tag and label-like object |
US7508305B2 (en) * | 2003-12-26 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Packing material, tag, certificate, paper money, and securities |
EP1733334B1 (de) * | 2004-04-09 | 2011-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Produktmanagementsystem |
US7452786B2 (en) * | 2004-06-29 | 2008-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film integrated circuit, and element substrate |
JP5041681B2 (ja) * | 2004-06-29 | 2012-10-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7309895B2 (en) * | 2005-01-25 | 2007-12-18 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
TWI505473B (zh) | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
JP4951868B2 (ja) * | 2005-03-18 | 2012-06-13 | 凸版印刷株式会社 | 薄膜トランジスタの製造方法 |
US8414962B2 (en) | 2005-10-28 | 2013-04-09 | The Penn State Research Foundation | Microcontact printed thin film capacitors |
JP5200443B2 (ja) * | 2007-07-30 | 2013-06-05 | セイコーエプソン株式会社 | 有機トランジスタ及びアクティブマトリックス基板 |
JP5532553B2 (ja) * | 2008-06-11 | 2014-06-25 | 凸版印刷株式会社 | 薄膜トランジスタ、薄膜トランジスタの製造方法、薄膜トランジスタアレイ及び画像表示装置 |
WO2011058611A1 (ja) * | 2009-11-13 | 2011-05-19 | 株式会社島津製作所 | 薄膜トランジスタの製造方法 |
GB2480876B (en) * | 2010-06-04 | 2015-02-25 | Plastic Logic Ltd | Conductive elements in organic electronic devices |
KR20130051614A (ko) * | 2011-11-10 | 2013-05-21 | 삼성전기주식회사 | 적층 세라믹 전자 부품 및 그 제조 방법 |
TWI532191B (zh) * | 2013-12-31 | 2016-05-01 | 友達光電股份有限公司 | 薄膜電晶體結構 |
CN107204375B (zh) * | 2017-05-19 | 2019-11-26 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制作方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US655365A (en) * | 1899-11-14 | 1900-08-07 | Henry M Johnson | Hernial truss. |
US5681718A (en) * | 1986-03-14 | 1997-10-28 | Celltech Limited | Methods for enhanced production of tissue plasminogen activator in cell culture using alkanoic acids or salts thereof |
US5468681A (en) * | 1989-08-28 | 1995-11-21 | Lsi Logic Corporation | Process for interconnecting conductive substrates using an interposer having conductive plastic filled vias |
US5650323A (en) * | 1991-06-26 | 1997-07-22 | Costar Corporation | System for growing and manipulating tissue cultures using 96-well format equipment |
US5707869A (en) * | 1994-06-28 | 1998-01-13 | Wolf; Martin L. | Compartmentalized multiple well tissue culture plate |
JP3372258B2 (ja) * | 1995-08-04 | 2003-01-27 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | リソグラフィ・プロセス用のスタンプ |
US6031269A (en) * | 1997-04-18 | 2000-02-29 | Advanced Micro Devices, Inc. | Quadruple gate field effect transistor structure for use in integrated circuit devices |
EP0958663A1 (de) * | 1997-12-05 | 1999-11-24 | Koninklijke Philips Electronics N.V. | Zwischenverstärker zur identifikation |
US7122835B1 (en) * | 1999-04-07 | 2006-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and a method of manufacturing the same |
US6197663B1 (en) * | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
KR100315208B1 (ko) * | 1999-12-17 | 2001-11-26 | 구본준, 론 위라하디락사 | 액정표시소자 및 그 제조방법 |
WO2003036265A2 (en) * | 2001-10-26 | 2003-05-01 | Virtual Arrays, Inc. | Assay systems with adjustable fluid communication |
IL136232A0 (en) * | 2000-05-18 | 2001-05-20 | Bar Ilan University Res Author | Measurements of enzymatic activity in a single, individual cell in population |
EP1330306A2 (de) * | 2000-10-10 | 2003-07-30 | BioTrove, Inc. | Vorrichtung zum testen, synthese und lagerung sowie verfahren zur herstellung, verwendung und handhabung |
US6495340B2 (en) * | 2000-11-28 | 2002-12-17 | Medis El Ltd. | Cell carrier grids |
US6544788B2 (en) * | 2001-02-15 | 2003-04-08 | Vijay Singh | Disposable perfusion bioreactor for cell culture |
US6982194B2 (en) * | 2001-03-27 | 2006-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP3809165B2 (ja) * | 2001-06-14 | 2006-08-16 | ミリポア・コーポレイション | マルチウェル試験装置 |
-
2002
- 2002-10-10 AT AT02772725T patent/ATE463845T1/de not_active IP Right Cessation
- 2002-10-10 JP JP2003537125A patent/JP2005506704A/ja active Pending
- 2002-10-10 KR KR10-2004-7005207A patent/KR20040052226A/ko not_active Application Discontinuation
- 2002-10-10 DE DE60235906T patent/DE60235906D1/de not_active Expired - Lifetime
- 2002-10-10 EP EP02772725A patent/EP1438753B1/de not_active Expired - Lifetime
- 2002-10-10 WO PCT/IB2002/004169 patent/WO2003034502A1/en active Application Filing
- 2002-10-10 US US10/492,331 patent/US7282769B2/en not_active Expired - Fee Related
- 2002-10-10 CN CNB028199944A patent/CN100367516C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100367516C (zh) | 2008-02-06 |
US7282769B2 (en) | 2007-10-16 |
EP1438753B1 (de) | 2010-04-07 |
CN1568548A (zh) | 2005-01-19 |
JP2005506704A (ja) | 2005-03-03 |
DE60235906D1 (de) | 2010-05-20 |
EP1438753A1 (de) | 2004-07-21 |
KR20040052226A (ko) | 2004-06-22 |
US20040245519A1 (en) | 2004-12-09 |
WO2003034502A1 (en) | 2003-04-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |