ATE535948T1 - Herstellungsverfahren für einen cbram speicher mit verbesserter zuverlässigkeit - Google Patents

Herstellungsverfahren für einen cbram speicher mit verbesserter zuverlässigkeit

Info

Publication number
ATE535948T1
ATE535948T1 AT08166441T AT08166441T ATE535948T1 AT E535948 T1 ATE535948 T1 AT E535948T1 AT 08166441 T AT08166441 T AT 08166441T AT 08166441 T AT08166441 T AT 08166441T AT E535948 T1 ATE535948 T1 AT E535948T1
Authority
AT
Austria
Prior art keywords
layer
contacts
sub
production process
improved reliability
Prior art date
Application number
AT08166441T
Other languages
English (en)
Inventor
Veronique Sousa
Cyril Dressler
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE535948T1 publication Critical patent/ATE535948T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
AT08166441T 2007-10-16 2008-10-13 Herstellungsverfahren für einen cbram speicher mit verbesserter zuverlässigkeit ATE535948T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0758363A FR2922368A1 (fr) 2007-10-16 2007-10-16 Procede de fabrication d'une memoire cbram ayant une fiabilite amelioree

Publications (1)

Publication Number Publication Date
ATE535948T1 true ATE535948T1 (de) 2011-12-15

Family

ID=39272490

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08166441T ATE535948T1 (de) 2007-10-16 2008-10-13 Herstellungsverfahren für einen cbram speicher mit verbesserter zuverlässigkeit

Country Status (5)

Country Link
US (1) US8048713B2 (de)
EP (1) EP2051309B1 (de)
JP (1) JP2009099990A (de)
AT (1) ATE535948T1 (de)
FR (1) FR2922368A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2934711B1 (fr) * 2008-07-29 2011-03-11 Commissariat Energie Atomique Dispositif memoire et memoire cbram a fiablilite amelioree.
FR2981199B1 (fr) * 2011-10-10 2014-06-27 Altis Semiconductor Snc Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures elevees
TWI625874B (zh) * 2015-11-05 2018-06-01 華邦電子股份有限公司 導電橋接式隨機存取記憶體
US9947722B2 (en) 2016-03-16 2018-04-17 Toshiba Memory Corporation Semiconductor memory device
CN110546755A (zh) * 2017-05-01 2019-12-06 索尼半导体解决方案公司 选择器件和存储装置

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US933365A (en) 1908-10-05 1909-09-07 Harvey Cory Conveyer.
US4115872A (en) 1977-05-31 1978-09-19 Burroughs Corporation Amorphous semiconductor memory device for employment in an electrically alterable read-only memory
US4177475A (en) 1977-10-31 1979-12-04 Burroughs Corporation High temperature amorphous memory device for an electrically alterable read-only memory
JPS62205598A (ja) 1986-03-05 1987-09-10 Hitachi Ltd 情報記憶再生方式及び情報記憶担体
US5363329A (en) 1993-11-10 1994-11-08 Eugeniy Troyan Semiconductor memory device for use in an electrically alterable read-only memory
US5761115A (en) 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
US5933365A (en) 1997-06-19 1999-08-03 Energy Conversion Devices, Inc. Memory element with energy control mechanism
US6635914B2 (en) 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
US6603678B2 (en) 2001-01-11 2003-08-05 Hewlett-Packard Development Company, L.P. Thermally-assisted switching of magnetic memory elements
US6348365B1 (en) * 2001-03-02 2002-02-19 Micron Technology, Inc. PCRAM cell manufacturing
US6818481B2 (en) * 2001-03-07 2004-11-16 Micron Technology, Inc. Method to manufacture a buried electrode PCRAM cell
US6734455B2 (en) 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US7102150B2 (en) 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6613604B2 (en) * 2001-08-02 2003-09-02 Ovonyx, Inc. Method for making small pore for use in programmable resistance memory element
EP1434232B1 (de) 2001-08-13 2007-09-19 Advanced Micro Devices, Inc. Speicherzelle
US6737312B2 (en) * 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6784018B2 (en) 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6955940B2 (en) 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US6646902B2 (en) * 2001-08-30 2003-11-11 Micron Technology, Inc. Method of retaining memory state in a programmable conductor RAM
US6709958B2 (en) 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US7109056B2 (en) * 2001-09-20 2006-09-19 Micron Technology, Inc. Electro-and electroless plating of metal in the manufacture of PCRAM devices
WO2003032392A2 (en) 2001-10-09 2003-04-17 Axon Technologies Corporation Programmable microelectronic device, structure, and system, and method of forming the same
US6815818B2 (en) * 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US7087919B2 (en) 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
AU2003233406A1 (en) 2002-03-15 2003-09-29 Axon Technologies Corporation Programmable structure, an array including the structure, and methods of forming the same
US6855975B2 (en) * 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6864500B2 (en) * 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
CN100334735C (zh) 2002-04-30 2007-08-29 独立行政法人科学技术振兴机构 固体电解质开关元件及使用其的fpga、存储元件及其制造方法
US6856002B2 (en) * 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US6864521B2 (en) 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US6867114B2 (en) 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US7294527B2 (en) * 2002-08-29 2007-11-13 Micron Technology Inc. Method of forming a memory cell
US7050327B2 (en) * 2003-04-10 2006-05-23 Micron Technology, Inc. Differential negative resistance memory
FR2861887B1 (fr) 2003-11-04 2006-01-13 Commissariat Energie Atomique Element de memoire a changement de phase a cyclabilite amelioree
US6925000B2 (en) * 2003-12-12 2005-08-02 Maglabs, Inc. Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
FR2863767B1 (fr) * 2003-12-12 2006-06-09 Commissariat Energie Atomique Support memoire irreversible a deformation plastique et procede de realisation d'un tel support
US7153721B2 (en) 2004-01-28 2006-12-26 Micron Technology, Inc. Resistance variable memory elements based on polarized silver-selenide network growth
DE102004046804B4 (de) 2004-09-27 2006-10-05 Infineon Technologies Ag Resistiv schaltender Halbleiterspeicher
FR2880177B1 (fr) 2004-12-23 2007-05-18 Commissariat Energie Atomique Memoire pmc ayant un temps de retention et une vitesse d'ecriture ameliores
US7317200B2 (en) * 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
FR2895531B1 (fr) 2005-12-23 2008-05-09 Commissariat Energie Atomique Procede ameliore de realisation de cellules memoires de type pmc

Also Published As

Publication number Publication date
US8048713B2 (en) 2011-11-01
US20090098681A1 (en) 2009-04-16
JP2009099990A (ja) 2009-05-07
FR2922368A1 (fr) 2009-04-17
EP2051309B1 (de) 2011-11-30
EP2051309A1 (de) 2009-04-22

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