FR2981199B1 - Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures elevees - Google Patents
Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures eleveesInfo
- Publication number
- FR2981199B1 FR2981199B1 FR1159124A FR1159124A FR2981199B1 FR 2981199 B1 FR2981199 B1 FR 2981199B1 FR 1159124 A FR1159124 A FR 1159124A FR 1159124 A FR1159124 A FR 1159124A FR 2981199 B1 FR2981199 B1 FR 2981199B1
- Authority
- FR
- France
- Prior art keywords
- memory
- chalcogenure
- dope
- high temperatures
- microelectronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004377 microelectronic Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1159124A FR2981199B1 (fr) | 2011-10-10 | 2011-10-10 | Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures elevees |
US13/646,882 US20130270505A1 (en) | 2011-10-10 | 2012-10-08 | Microelectronic device with programmable memory, including a layer of doped chalcogenide that withstands high temperatures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1159124A FR2981199B1 (fr) | 2011-10-10 | 2011-10-10 | Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures elevees |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2981199A1 FR2981199A1 (fr) | 2013-04-12 |
FR2981199B1 true FR2981199B1 (fr) | 2014-06-27 |
Family
ID=45563205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1159124A Expired - Fee Related FR2981199B1 (fr) | 2011-10-10 | 2011-10-10 | Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures elevees |
Country Status (2)
Country | Link |
---|---|
US (1) | US20130270505A1 (fr) |
FR (1) | FR2981199B1 (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9324353B2 (en) | 2013-11-19 | 2016-04-26 | HGST Netherlands B.V. | Dual segregant heat assisted magnetic recording (HAMR) media |
US9478419B2 (en) | 2013-12-18 | 2016-10-25 | Asm Ip Holding B.V. | Sulfur-containing thin films |
US9245742B2 (en) | 2013-12-18 | 2016-01-26 | Asm Ip Holding B.V. | Sulfur-containing thin films |
US9443545B2 (en) * | 2013-12-24 | 2016-09-13 | HGST Netherlands B.V. | Thermally stable Au alloys as a heat diffusion and plasmonic underlayer for heat-assisted magnetic recording (HAMR) media |
US9461134B1 (en) | 2015-05-20 | 2016-10-04 | Asm Ip Holding B.V. | Method for forming source/drain contact structure with chalcogen passivation |
US10490475B2 (en) | 2015-06-03 | 2019-11-26 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation after oxide removal |
US9711350B2 (en) | 2015-06-03 | 2017-07-18 | Asm Ip Holding B.V. | Methods for semiconductor passivation by nitridation |
US9711396B2 (en) | 2015-06-16 | 2017-07-18 | Asm Ip Holding B.V. | Method for forming metal chalcogenide thin films on a semiconductor device |
US9741815B2 (en) | 2015-06-16 | 2017-08-22 | Asm Ip Holding B.V. | Metal selenide and metal telluride thin films for semiconductor device applications |
US10541271B2 (en) | 2017-10-18 | 2020-01-21 | Macronix International Co., Ltd. | Superlattice-like switching devices |
US10374009B1 (en) | 2018-07-17 | 2019-08-06 | Macronix International Co., Ltd. | Te-free AsSeGe chalcogenides for selector devices and memory devices using same |
KR102030341B1 (ko) * | 2018-12-19 | 2019-10-10 | 한양대학교 산학협력단 | 선택 소자 및 이를 이용한 메모리 소자 |
US11289540B2 (en) | 2019-10-15 | 2022-03-29 | Macronix International Co., Ltd. | Semiconductor device and memory cell |
US11158787B2 (en) | 2019-12-17 | 2021-10-26 | Macronix International Co., Ltd. | C—As—Se—Ge ovonic materials for selector devices and memory devices using same |
US11362276B2 (en) | 2020-03-27 | 2022-06-14 | Macronix International Co., Ltd. | High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8426967B2 (en) * | 2007-01-05 | 2013-04-23 | International Business Machines Corporation | Scaled-down phase change memory cell in recessed heater |
FR2922368A1 (fr) * | 2007-10-16 | 2009-04-17 | Commissariat Energie Atomique | Procede de fabrication d'une memoire cbram ayant une fiabilite amelioree |
US20090103351A1 (en) * | 2007-10-23 | 2009-04-23 | Cay-Uwe Pinnow | Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Memory Module |
-
2011
- 2011-10-10 FR FR1159124A patent/FR2981199B1/fr not_active Expired - Fee Related
-
2012
- 2012-10-08 US US13/646,882 patent/US20130270505A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20130270505A1 (en) | 2013-10-17 |
FR2981199A1 (fr) | 2013-04-12 |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 5 |
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PLFP | Fee payment |
Year of fee payment: 6 |
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PLFP | Fee payment |
Year of fee payment: 7 |
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TP | Transmission of property |
Owner name: X-FAB FRANCE, FR Effective date: 20180516 |
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PLFP | Fee payment |
Year of fee payment: 8 |
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PLFP | Fee payment |
Year of fee payment: 9 |
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PLFP | Fee payment |
Year of fee payment: 10 |
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PLFP | Fee payment |
Year of fee payment: 11 |
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PLFP | Fee payment |
Year of fee payment: 12 |
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ST | Notification of lapse |
Effective date: 20240605 |