FR2981199B1 - Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures elevees - Google Patents

Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures elevees

Info

Publication number
FR2981199B1
FR2981199B1 FR1159124A FR1159124A FR2981199B1 FR 2981199 B1 FR2981199 B1 FR 2981199B1 FR 1159124 A FR1159124 A FR 1159124A FR 1159124 A FR1159124 A FR 1159124A FR 2981199 B1 FR2981199 B1 FR 2981199B1
Authority
FR
France
Prior art keywords
memory
chalcogenure
dope
high temperatures
microelectronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1159124A
Other languages
English (en)
Other versions
FR2981199A1 (fr
Inventor
Faiz Dahmani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab France SAS
Original Assignee
Altis Semiconductor SNC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Altis Semiconductor SNC filed Critical Altis Semiconductor SNC
Priority to FR1159124A priority Critical patent/FR2981199B1/fr
Priority to US13/646,882 priority patent/US20130270505A1/en
Publication of FR2981199A1 publication Critical patent/FR2981199A1/fr
Application granted granted Critical
Publication of FR2981199B1 publication Critical patent/FR2981199B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
FR1159124A 2011-10-10 2011-10-10 Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures elevees Expired - Fee Related FR2981199B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1159124A FR2981199B1 (fr) 2011-10-10 2011-10-10 Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures elevees
US13/646,882 US20130270505A1 (en) 2011-10-10 2012-10-08 Microelectronic device with programmable memory, including a layer of doped chalcogenide that withstands high temperatures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1159124A FR2981199B1 (fr) 2011-10-10 2011-10-10 Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures elevees

Publications (2)

Publication Number Publication Date
FR2981199A1 FR2981199A1 (fr) 2013-04-12
FR2981199B1 true FR2981199B1 (fr) 2014-06-27

Family

ID=45563205

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1159124A Expired - Fee Related FR2981199B1 (fr) 2011-10-10 2011-10-10 Dispositif microelectronique a memoire programmable comportant une couche de chalcogenure dope resistante a des temperatures elevees

Country Status (2)

Country Link
US (1) US20130270505A1 (fr)
FR (1) FR2981199B1 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324353B2 (en) 2013-11-19 2016-04-26 HGST Netherlands B.V. Dual segregant heat assisted magnetic recording (HAMR) media
US9478419B2 (en) 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US9245742B2 (en) 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
US9443545B2 (en) * 2013-12-24 2016-09-13 HGST Netherlands B.V. Thermally stable Au alloys as a heat diffusion and plasmonic underlayer for heat-assisted magnetic recording (HAMR) media
US9461134B1 (en) 2015-05-20 2016-10-04 Asm Ip Holding B.V. Method for forming source/drain contact structure with chalcogen passivation
US10490475B2 (en) 2015-06-03 2019-11-26 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation after oxide removal
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device
US9741815B2 (en) 2015-06-16 2017-08-22 Asm Ip Holding B.V. Metal selenide and metal telluride thin films for semiconductor device applications
US10541271B2 (en) 2017-10-18 2020-01-21 Macronix International Co., Ltd. Superlattice-like switching devices
US10374009B1 (en) 2018-07-17 2019-08-06 Macronix International Co., Ltd. Te-free AsSeGe chalcogenides for selector devices and memory devices using same
KR102030341B1 (ko) * 2018-12-19 2019-10-10 한양대학교 산학협력단 선택 소자 및 이를 이용한 메모리 소자
US11289540B2 (en) 2019-10-15 2022-03-29 Macronix International Co., Ltd. Semiconductor device and memory cell
US11158787B2 (en) 2019-12-17 2021-10-26 Macronix International Co., Ltd. C—As—Se—Ge ovonic materials for selector devices and memory devices using same
US11362276B2 (en) 2020-03-27 2022-06-14 Macronix International Co., Ltd. High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8426967B2 (en) * 2007-01-05 2013-04-23 International Business Machines Corporation Scaled-down phase change memory cell in recessed heater
FR2922368A1 (fr) * 2007-10-16 2009-04-17 Commissariat Energie Atomique Procede de fabrication d'une memoire cbram ayant une fiabilite amelioree
US20090103351A1 (en) * 2007-10-23 2009-04-23 Cay-Uwe Pinnow Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Memory Module

Also Published As

Publication number Publication date
US20130270505A1 (en) 2013-10-17
FR2981199A1 (fr) 2013-04-12

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