ATE531669T1 - Herstellungsverfahren für feines metallhydridteilchen, feines metallhydridteilchen enthaltende flüssige dispersion und metallisches material - Google Patents

Herstellungsverfahren für feines metallhydridteilchen, feines metallhydridteilchen enthaltende flüssige dispersion und metallisches material

Info

Publication number
ATE531669T1
ATE531669T1 AT04745922T AT04745922T ATE531669T1 AT E531669 T1 ATE531669 T1 AT E531669T1 AT 04745922 T AT04745922 T AT 04745922T AT 04745922 T AT04745922 T AT 04745922T AT E531669 T1 ATE531669 T1 AT E531669T1
Authority
AT
Austria
Prior art keywords
fine particles
metal hydride
hydride fine
dispersion
metallic material
Prior art date
Application number
AT04745922T
Other languages
English (en)
Inventor
Hideyuki Hirakoso
Keisuke Abe
Yasuhiro Sanada
Kentarou Tsunozaki
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of ATE531669T1 publication Critical patent/ATE531669T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C01B6/02—Hydrides of transition elements; Addition complexes thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
AT04745922T 2003-06-10 2004-06-09 Herstellungsverfahren für feines metallhydridteilchen, feines metallhydridteilchen enthaltende flüssige dispersion und metallisches material ATE531669T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003164666 2003-06-10
PCT/JP2004/008370 WO2004110925A1 (ja) 2003-06-10 2004-06-09 金属水素化物微粒子、その製造方法、金属水素化物微粒子を含有する分散液及び金属質材料

Publications (1)

Publication Number Publication Date
ATE531669T1 true ATE531669T1 (de) 2011-11-15

Family

ID=33549191

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04745922T ATE531669T1 (de) 2003-06-10 2004-06-09 Herstellungsverfahren für feines metallhydridteilchen, feines metallhydridteilchen enthaltende flüssige dispersion und metallisches material

Country Status (8)

Country Link
US (1) US7550513B2 (de)
EP (1) EP1640338B1 (de)
JP (1) JP4747839B2 (de)
KR (1) KR101093465B1 (de)
CN (1) CN100344528C (de)
AT (1) ATE531669T1 (de)
TW (1) TW200503955A (de)
WO (1) WO2004110925A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1640338B1 (de) 2003-06-10 2011-11-02 Asahi Glass Company, Limited Herstellungsverfahren für feines metallhydridteilchen, feines metallhydridteilchen enthaltende flüssige dispersion und metallisches material
JP2005081501A (ja) * 2003-09-09 2005-03-31 Ulvac Japan Ltd 金属ナノ粒子及びその製造方法、金属ナノ粒子分散液及びその製造方法、並びに金属細線及び金属膜及びその形成方法
EP1724789B1 (de) * 2004-03-10 2010-12-22 Asahi Glass Company, Limited Metallhaltiger feinpartikel, flüssigdispersion eines metallhaltigen feinpartikels und leitfähiges metallhaltiges material
EP1876604B1 (de) * 2005-04-12 2011-02-09 Asahi Glass Company Ltd. Farbstoffzusammensetzung und metallmaterial
TWI392594B (zh) * 2006-04-20 2013-04-11 Microjet Technology Co Ltd 微小顆粒製造系統及製程
EP2048205A4 (de) 2006-07-28 2010-07-21 Asahi Glass Co Ltd Dispersion mit metallfeinteilchen, verfahren zur herstellung der dispersion sowie gegenstände mit metallfilmen
KR101375047B1 (ko) * 2006-12-29 2014-03-26 엘지디스플레이 주식회사 표시장치 제조방법
WO2009098985A1 (ja) * 2008-02-07 2009-08-13 Asahi Glass Company, Limited 水素化銅ナノ粒子、その製造方法、金属ペーストおよび物品
US7901491B2 (en) * 2008-03-31 2011-03-08 General Electric Company Hydrogen storage material and related system
JP5387034B2 (ja) * 2009-02-20 2014-01-15 大日本印刷株式会社 導電性基板
KR101490571B1 (ko) * 2010-01-28 2015-02-05 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 패턴 형상 도전성막의 형성 방법
RU2013106521A (ru) 2010-07-15 2014-08-20 Асахи Гласс Компани, Лимитед Способ получения метаматериала и метаматериал
CN103328136B (zh) * 2011-03-31 2014-12-03 Dic株式会社 有机化合物与银芯铜壳纳米粒子的复合体及其制造方法
JPWO2013021567A1 (ja) 2011-08-11 2015-03-05 三洋電機株式会社 金属の接合方法および金属接合構造
JP5088760B1 (ja) 2011-11-14 2012-12-05 石原薬品株式会社 銅微粒子分散液、導電膜形成方法及び回路基板
JP2015110682A (ja) * 2012-03-21 2015-06-18 旭硝子株式会社 導電インク、導体付き基材、および導体付き基材の製造方法
JP2015110683A (ja) * 2012-03-22 2015-06-18 旭硝子株式会社 導電インク、導体付き基材及び導体付き基材の製造方法
US9234112B2 (en) * 2013-06-05 2016-01-12 Korea Institute Of Machinery & Materials Metal precursor powder, method of manufacturing conductive metal layer or pattern, and device including the same
JP6137049B2 (ja) * 2014-05-13 2017-05-31 株式会社村田製作所 セラミック電子部品の製造方法
CN114162784B (zh) * 2021-11-03 2023-02-17 五邑大学 一种钯氢化合物的绿色制备方法及其应用

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3844854A (en) * 1967-09-20 1974-10-29 Dow Chemical Co Stabilization of light metal hydride
JPS462162B1 (de) * 1968-12-17 1971-01-20
US3963831A (en) * 1972-06-15 1976-06-15 Dynamit Nobel Aktiengesellschaft Process for the manufacture of alkali metal hydrides in coarse powder form
US4666735A (en) * 1983-04-15 1987-05-19 Polyonics Corporation Process for producing product having patterned metal layer
JPS60160192A (ja) * 1983-10-12 1985-08-21 日立粉末冶金株式会社 混成集積回路基板の製造方法
JPH02294417A (ja) * 1989-05-10 1990-12-05 Seidou Kagaku Kogyo Kk 超微粒子銅粉末の製造方法
US6528441B1 (en) * 1992-10-28 2003-03-04 Westinghouse Savannah River Company, L.L.C. Hydrogen storage composition and method
MY125159A (en) * 1998-09-14 2006-07-31 Mitsubishi Materials Corp Fine metal particle-dispersion solution and conductive film using the same
US6589312B1 (en) * 1999-09-01 2003-07-08 David G. Snow Nanoparticles for hydrogen storage, transportation, and distribution
US20030170314A1 (en) * 2000-07-27 2003-09-11 Burrell Robert E. Compositions of metal-containing compounds
JP3942816B2 (ja) 2000-10-25 2007-07-11 ハリマ化成株式会社 金属間のロウ付け接合方法
JP3774638B2 (ja) 2001-04-24 2006-05-17 ハリマ化成株式会社 インクジェット印刷法を利用する回路パターンの形成方法
JP3764349B2 (ja) 2001-05-07 2006-04-05 ハリマ化成株式会社 金属微粒子分散液を用いたメッキ代替導電性金属皮膜の形成方法
JP3817201B2 (ja) * 2002-04-19 2006-09-06 Ｊｓｒ株式会社 導電性膜形成用組成物、導電性膜およびその形成法
EP1640338B1 (de) 2003-06-10 2011-11-02 Asahi Glass Company, Limited Herstellungsverfahren für feines metallhydridteilchen, feines metallhydridteilchen enthaltende flüssige dispersion und metallisches material

Also Published As

Publication number Publication date
KR101093465B1 (ko) 2011-12-13
TW200503955A (en) 2005-02-01
US7550513B2 (en) 2009-06-23
WO2004110925A1 (ja) 2004-12-23
EP1640338A4 (de) 2008-06-04
EP1640338A1 (de) 2006-03-29
TWI350274B (de) 2011-10-11
CN100344528C (zh) 2007-10-24
EP1640338B1 (de) 2011-11-02
JPWO2004110925A1 (ja) 2006-07-20
CN1805901A (zh) 2006-07-19
US20060070493A1 (en) 2006-04-06
KR20060037260A (ko) 2006-05-03
JP4747839B2 (ja) 2011-08-17

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