ATE528690T1 - Negative resistzusammensetzung und verfahren zur strukturformung damit - Google Patents

Negative resistzusammensetzung und verfahren zur strukturformung damit

Info

Publication number
ATE528690T1
ATE528690T1 AT08006042T AT08006042T ATE528690T1 AT E528690 T1 ATE528690 T1 AT E528690T1 AT 08006042 T AT08006042 T AT 08006042T AT 08006042 T AT08006042 T AT 08006042T AT E528690 T1 ATE528690 T1 AT E528690T1
Authority
AT
Austria
Prior art keywords
resist composition
negative resist
therefrom
acid
soluble polymer
Prior art date
Application number
AT08006042T
Other languages
English (en)
Inventor
Koji Shirakawa
Tadateru Yatsuo
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of ATE528690T1 publication Critical patent/ATE528690T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
AT08006042T 2007-03-29 2008-03-28 Negative resistzusammensetzung und verfahren zur strukturformung damit ATE528690T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007088557 2007-03-29
JP2008079338A JP4958821B2 (ja) 2007-03-29 2008-03-25 ネガ型レジスト組成物及びそれを用いたパターン形成方法

Publications (1)

Publication Number Publication Date
ATE528690T1 true ATE528690T1 (de) 2011-10-15

Family

ID=40048431

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08006042T ATE528690T1 (de) 2007-03-29 2008-03-28 Negative resistzusammensetzung und verfahren zur strukturformung damit

Country Status (4)

Country Link
JP (1) JP4958821B2 (de)
KR (2) KR20080088508A (de)
AT (1) ATE528690T1 (de)
TW (1) TWI398730B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5656413B2 (ja) 2009-01-30 2015-01-21 富士フイルム株式会社 ネガ型レジストパターン形成方法、それに用いられる現像液及びネガ型化学増幅型レジスト組成物、並びにレジストパターン
JP5557550B2 (ja) 2009-02-20 2014-07-23 富士フイルム株式会社 電子線又はｅｕｖ光を用いた有機溶剤系現像又は多重現像パターン形成方法
JP5352320B2 (ja) * 2009-03-31 2013-11-27 富士フイルム株式会社 ネガ型パターン形成方法およびそれに用いられる現像後処理液
JP5630181B2 (ja) * 2010-03-05 2014-11-26 大日本印刷株式会社 ネガ型レジスト組成物、当該レジスト組成物を用いたレリーフパターンの製造方法及びフォトマスクの製造方法
JPWO2012014576A1 (ja) * 2010-07-30 2013-09-12 Jsr株式会社 ネガ型感放射線性樹脂組成物
JP5514759B2 (ja) 2011-03-25 2014-06-04 富士フイルム株式会社 レジストパターン形成方法、レジストパターン、有機溶剤現像用の架橋性ネガ型化学増幅型レジスト組成物、レジスト膜、及びレジスト塗布マスクブランクス
JP5358630B2 (ja) * 2011-08-17 2013-12-04 富士フイルム株式会社 レジストパターン形成方法、ナノインプリント用モールドの製造方法、及びフォトマスクの製造方法
JP5732364B2 (ja) 2011-09-30 2015-06-10 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP6209307B2 (ja) 2011-09-30 2017-10-04 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
JP5879209B2 (ja) * 2012-06-21 2016-03-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP5873826B2 (ja) 2012-07-27 2016-03-01 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6095231B2 (ja) 2013-03-29 2017-03-15 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
JP6185874B2 (ja) 2013-05-02 2017-08-23 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、及び、電子デバイス
JP6247858B2 (ja) 2013-08-01 2017-12-13 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
JP6200721B2 (ja) 2013-08-01 2017-09-20 富士フイルム株式会社 パターン形成方法、及びこれを用いた電子デバイスの製造方法
JP6122754B2 (ja) 2013-09-30 2017-04-26 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
JP6313604B2 (ja) 2014-02-05 2018-04-18 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
JP6220695B2 (ja) 2014-02-18 2017-10-25 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法及び電子デバイスの製造方法
KR101877029B1 (ko) * 2016-05-13 2018-07-11 영창케미칼 주식회사 화학증폭형 네가티브형 포토레지스트 조성물
JP7166151B2 (ja) * 2018-11-22 2022-11-07 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
CN115850950B (zh) * 2022-12-21 2024-06-11 安徽远征传导科技股份有限公司 一种新能源汽车用移动抗曲挠交流充电枪电缆

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JP3638743B2 (ja) * 1996-12-26 2005-04-13 東京応化工業株式会社 化学増幅型ネガ型レジスト組成物
JPH11149159A (ja) * 1997-11-17 1999-06-02 Hitachi Ltd パタン形成方法及び半導体素子の製造方法
JP3707655B2 (ja) * 1998-10-24 2005-10-19 東京応化工業株式会社 ネガ型レジスト組成物
JP2000206679A (ja) * 1999-01-08 2000-07-28 Hitachi Ltd パタン形成方法および半導体素子の製造方法
JP4132642B2 (ja) * 1999-11-15 2008-08-13 東京応化工業株式会社 ネガ型レジスト基材及びそれを用いたイオン注入基板の製造方法
JP4092083B2 (ja) * 2001-03-21 2008-05-28 富士フイルム株式会社 電子線又はｘ線用ネガ型レジスト組成物
JP2002365802A (ja) * 2001-06-08 2002-12-18 Fuji Photo Film Co Ltd ネガ型レジスト組成物
JP2002372783A (ja) * 2001-06-15 2002-12-26 Fuji Photo Film Co Ltd ネガ型レジスト組成物
TWI242689B (en) * 2001-07-30 2005-11-01 Tokyo Ohka Kogyo Co Ltd Chemically amplified negative photoresist composition for the formation of thick films, photoresist base material and method of forming bumps using the same
KR100840635B1 (ko) * 2001-11-30 2008-06-24 와코 쥰야꾸 고교 가부시키가이샤 비스이미드 화합물, 이것을 이용한 산 발생제 및 레지스트조성물 및 해당 조성물을 이용한 패턴 형성 방법
JP3856306B2 (ja) * 2002-03-29 2006-12-13 富士フイルムホールディングス株式会社 ネガ型レジスト組成物
EP1566700B1 (de) * 2004-02-23 2016-08-03 FUJIFILM Corporation Automatisches Entwicklungsverfahren von fotoempfindlichen lithographischen Druckplatten und automatische Entwicklungsvorrichtung
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4789599B2 (ja) * 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
JP4505357B2 (ja) * 2005-03-16 2010-07-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法

Also Published As

Publication number Publication date
KR20140041649A (ko) 2014-04-04
TWI398730B (zh) 2013-06-11
JP2008268935A (ja) 2008-11-06
TW200905394A (en) 2009-02-01
JP4958821B2 (ja) 2012-06-20
KR101502617B1 (ko) 2015-03-12
KR20080088508A (ko) 2008-10-02

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