ATE517437T1 - Lichtemittierende halbleitervorrichtung und herstellungsverfahren für eine aus einem verbindungshalbleiter bestehende lichtemittierende halbleitervorrichtung - Google Patents

Lichtemittierende halbleitervorrichtung und herstellungsverfahren für eine aus einem verbindungshalbleiter bestehende lichtemittierende halbleitervorrichtung

Info

Publication number
ATE517437T1
ATE517437T1 AT00105558T AT00105558T ATE517437T1 AT E517437 T1 ATE517437 T1 AT E517437T1 AT 00105558 T AT00105558 T AT 00105558T AT 00105558 T AT00105558 T AT 00105558T AT E517437 T1 ATE517437 T1 AT E517437T1
Authority
AT
Austria
Prior art keywords
light emitting
semiconductor light
production method
semiconductor
vacuum chamber
Prior art date
Application number
AT00105558T
Other languages
English (en)
Inventor
Takao Nakamura
Hideki Matsubara
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP10758699A external-priority patent/JP3141874B2/ja
Priority claimed from JP18141499A external-priority patent/JP3709101B2/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Application granted granted Critical
Publication of ATE517437T1 publication Critical patent/ATE517437T1/de

Links

Classifications

    • EFIXED CONSTRUCTIONS
    • E05LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05BLOCKS; ACCESSORIES THEREFOR; HANDCUFFS
    • E05B63/00Locks or fastenings with special structural characteristics
    • E05B63/22Locks or fastenings with special structural characteristics operated by a pulling or pushing action perpendicular to the front plate, i.e. by pulling or pushing the wing itself
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/42Transparent materials
    • EFIXED CONSTRUCTIONS
    • E05LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05BLOCKS; ACCESSORIES THEREFOR; HANDCUFFS
    • E05B1/00Knobs or handles for wings; Knobs, handles, or press buttons for locks or latches on wings
    • E05B1/0053Handles or handle attachments facilitating operation, e.g. by children or burdened persons
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/94Laser ablative material removal

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
AT00105558T 1999-04-15 2000-03-16 Lichtemittierende halbleitervorrichtung und herstellungsverfahren für eine aus einem verbindungshalbleiter bestehende lichtemittierende halbleitervorrichtung ATE517437T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10758699A JP3141874B2 (ja) 1999-04-15 1999-04-15 化合物半導体発光素子の製造方法
JP18141499A JP3709101B2 (ja) 1999-06-28 1999-06-28 半導体発光素子

Publications (1)

Publication Number Publication Date
ATE517437T1 true ATE517437T1 (de) 2011-08-15

Family

ID=26447608

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00105558T ATE517437T1 (de) 1999-04-15 2000-03-16 Lichtemittierende halbleitervorrichtung und herstellungsverfahren für eine aus einem verbindungshalbleiter bestehende lichtemittierende halbleitervorrichtung

Country Status (6)

Country Link
US (2) US6876003B1 (de)
EP (2) EP1045456B1 (de)
KR (2) KR100721643B1 (de)
CN (1) CN1148811C (de)
AT (1) ATE517437T1 (de)
TW (1) TW467874B (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020032883A (ko) * 2000-10-27 2002-05-04 한기관 마킹용 레이저를 이용한 투명 아이티오 전극 패턴 제작 방법
US7442629B2 (en) * 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7390689B2 (en) * 2001-05-25 2008-06-24 President And Fellows Of Harvard College Systems and methods for light absorption and field emission using microstructured silicon
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
AU2003280878A1 (en) 2002-11-16 2004-06-15 Lg Innotek Co., Ltd Light emitting device and fabrication method thereof
US6906358B2 (en) * 2003-01-30 2005-06-14 Epir Technologies, Inc. Nonequilibrium photodetector with superlattice exclusion layer
EP1686629B1 (de) * 2003-11-19 2018-12-26 Nichia Corporation Nitrid-Halbleiter-Leuchtdiode und Verfahren zu ihrer Herstellung
TWI266436B (en) * 2004-07-30 2006-11-11 Fujikura Ltd Light-emitting device and method for manufacturing the same
DE102005055293A1 (de) * 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
WO2007071723A2 (en) * 2005-12-23 2007-06-28 Essilor International (Compagnie Generale D'optique) Optical article having an antistatic, antireflection coating and method of manufacturing same
BRPI0707014A2 (pt) * 2006-02-23 2011-04-12 Picodeon Ltd Oy celula solar e um arranjo e um método para a produção de uma célula solar
DE102007004303A1 (de) * 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007004304A1 (de) * 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
WO2008115577A1 (en) * 2007-03-21 2008-09-25 Flowserve Management Company Laser surface treatment for mechanical seal faces
US8603902B2 (en) * 2008-01-31 2013-12-10 President And Fellows Of Harvard College Engineering flat surfaces on materials doped via pulsed laser irradiation
DE102008027045A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode
KR101016266B1 (ko) * 2008-11-13 2011-02-25 한국과학기술원 투명 전자소자용 투명 메모리.
JP2011009502A (ja) * 2009-06-26 2011-01-13 Showa Denko Kk 発光素子、その製造方法、ランプ、電子機器及び機械装置
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
JP2014525091A (ja) 2011-07-13 2014-09-25 サイオニクス、インク. 生体撮像装置および関連方法
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
CN116525642B (zh) * 2023-07-05 2024-01-09 季华实验室 显示面板、显示面板的制备方法以及显示装置

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797686A (en) 1980-12-10 1982-06-17 Nec Corp Light emitting element pellet
JPS57106246A (en) 1980-12-23 1982-07-02 Nec Corp Radio communication system
US4495514A (en) * 1981-03-02 1985-01-22 Eastman Kodak Company Transparent electrode light emitting diode and method of manufacture
JPS58162076A (ja) 1982-03-23 1983-09-26 Nippon Telegr & Teleph Corp <Ntt> 光電変換素子の製造方法
DE69220942T2 (de) 1991-05-15 1998-03-05 Minnesota Mining And Mfg. Co., Saint Paul, Minn. Blau-gruen diodenlaser
JP3333219B2 (ja) 1991-11-15 2002-10-15 株式会社東芝 化合物半導体発光素子
JPH05139735A (ja) 1991-11-18 1993-06-08 Toyota Motor Corp レーザアブレーシヨン法による薄膜形成装置
JPH05283746A (ja) 1992-03-31 1993-10-29 Nippon Telegr & Teleph Corp <Ntt> 面発光ダイオード
JPH06318406A (ja) 1992-12-16 1994-11-15 Idemitsu Kosan Co Ltd 導電性透明基材およびその製造方法
AU6411894A (en) * 1993-03-23 1994-10-11 Southwall Technologies, Inc. Gold-clad-silver-layer-containing films
JP3286002B2 (ja) 1993-03-25 2002-05-27 オリンパス光学工業株式会社 薄膜形成装置
US5358880A (en) * 1993-04-12 1994-10-25 Motorola, Inc. Method of manufacturing closed cavity LED
US5411772A (en) 1994-01-25 1995-05-02 Rockwell International Corporation Method of laser ablation for uniform thin film deposition
JP3586293B2 (ja) * 1994-07-11 2004-11-10 ソニー株式会社 半導体発光素子
JP3333330B2 (ja) 1994-09-30 2002-10-15 株式会社東芝 半導体発光素子及びその製造方法
US5741580A (en) 1995-08-25 1998-04-21 Minolta Co, Ltd. Crystalline thin film and producing method thereof, and acoustooptic deflection element
JPH0959762A (ja) 1995-08-25 1997-03-04 Minolta Co Ltd ZnO薄膜形成方法
JP3475637B2 (ja) 1996-02-27 2003-12-08 松下電器産業株式会社 半導体構造体および半導体装置の製造方法
JP3746569B2 (ja) 1996-06-21 2006-02-15 ローム株式会社 発光半導体素子
US5776622A (en) 1996-07-29 1998-07-07 Eastman Kodak Company Bilayer eletron-injeting electrode for use in an electroluminescent device
JP3309745B2 (ja) * 1996-11-29 2002-07-29 豊田合成株式会社 GaN系化合物半導体発光素子及びその製造方法
JP3156756B2 (ja) 1997-01-10 2001-04-16 サンケン電気株式会社 半導体発光素子
JP3344296B2 (ja) 1997-10-21 2002-11-11 昭和電工株式会社 半導体発光素子用の電極
DE19820777C2 (de) * 1997-05-08 2003-06-18 Showa Denko Kk Elektrode für lichtemittierende Halbleitervorrichtungen
JP3807020B2 (ja) 1997-05-08 2006-08-09 昭和電工株式会社 発光半導体素子用透光性電極およびその作製方法
JPH1187772A (ja) 1997-09-01 1999-03-30 Showa Denko Kk 半導体発光素子用の電極
JP3713124B2 (ja) * 1997-05-15 2005-11-02 ローム株式会社 半導体発光素子およびその製法
US6107641A (en) * 1997-09-10 2000-08-22 Xerox Corporation Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage
JPH11119238A (ja) 1997-10-20 1999-04-30 Sony Corp 反射型液晶表示素子
KR100341669B1 (ko) * 1997-12-27 2002-06-24 오카모토 유지 열전 변환 소자
JP4183299B2 (ja) * 1998-03-25 2008-11-19 株式会社東芝 窒化ガリウム系化合物半導体発光素子
KR19990080779A (ko) * 1998-04-21 1999-11-15 조장연 질화갈륨 반도체기판을 이용한 질화갈륨계청색 발광다이오드제조방법
JP4170454B2 (ja) 1998-07-24 2008-10-22 Hoya株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
KR100294345B1 (ko) * 1998-10-02 2001-07-12 조장연 더블클래딩-더블헤테로구조를갖는질화갈륨계발광소자의제작방법
JP3469484B2 (ja) 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
JP3141874B2 (ja) 1999-04-15 2001-03-07 住友電気工業株式会社 化合物半導体発光素子の製造方法

Also Published As

Publication number Publication date
CN1271182A (zh) 2000-10-25
KR100721643B1 (ko) 2007-05-23
EP1045456A3 (de) 2007-02-28
KR100688006B1 (ko) 2007-02-27
KR20060079179A (ko) 2006-07-05
CN1148811C (zh) 2004-05-05
US20030166308A1 (en) 2003-09-04
US6876003B1 (en) 2005-04-05
KR20000071682A (ko) 2000-11-25
EP1045456B1 (de) 2011-07-20
TW467874B (en) 2001-12-11
EP1045456A2 (de) 2000-10-18
EP1976033A2 (de) 2008-10-01
US6872649B2 (en) 2005-03-29

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