ATE509355T1 - Verfahren zur herstellung einer nanolücke für variable kapazitive elemente - Google Patents
Verfahren zur herstellung einer nanolücke für variable kapazitive elementeInfo
- Publication number
- ATE509355T1 ATE509355T1 AT04759726T AT04759726T ATE509355T1 AT E509355 T1 ATE509355 T1 AT E509355T1 AT 04759726 T AT04759726 T AT 04759726T AT 04759726 T AT04759726 T AT 04759726T AT E509355 T1 ATE509355 T1 AT E509355T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- bearing compound
- compound electrode
- sacrificial layer
- variable capacitive
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 10
- 150000001875 compounds Chemical class 0.000 abstract 10
- 229910052710 silicon Inorganic materials 0.000 abstract 10
- 239000010703 silicon Substances 0.000 abstract 10
- 238000000151 deposition Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
- B81C1/00063—Trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/418,617 US7172917B2 (en) | 2003-04-17 | 2003-04-17 | Method of making a nanogap for variable capacitive elements, and device having a nanogap |
PCT/US2004/008808 WO2004095540A2 (en) | 2003-04-17 | 2004-03-22 | Method of making a nanogap for variable capacitive elements and device having a nanogap |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE509355T1 true ATE509355T1 (de) | 2011-05-15 |
Family
ID=33159151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04759726T ATE509355T1 (de) | 2003-04-17 | 2004-03-22 | Verfahren zur herstellung einer nanolücke für variable kapazitive elemente |
Country Status (4)
Country | Link |
---|---|
US (1) | US7172917B2 (de) |
EP (1) | EP1618599B1 (de) |
AT (1) | ATE509355T1 (de) |
WO (1) | WO2004095540A2 (de) |
Families Citing this family (37)
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JP4014432B2 (ja) * | 2002-03-28 | 2007-11-28 | ユーディナデバイス株式会社 | インタディジタルキャパシタ及びその容量調整方法 |
EP1687896B1 (de) * | 2003-11-14 | 2007-06-13 | Koninklijke Philips Electronics N.V. | Halbleiterbauelement mit enem resonator |
KR100679704B1 (ko) * | 2005-01-10 | 2007-02-06 | 한국과학기술원 | 분자소자와 바이오 센서를 위한 나노갭 또는 나노 전계효과 트랜지스터 제작방법 |
FR2881416B1 (fr) * | 2005-01-31 | 2007-06-01 | St Microelectronics Crolles 2 | Microresonateur |
DE102005037876A1 (de) * | 2005-08-10 | 2007-02-22 | Siemens Ag | Vorrichtung zur Umwandlung mechanischer Energie in elektrische Energie und Verfahren zum Betreiben dieser Vorrichtung |
KR100849384B1 (ko) * | 2005-10-21 | 2008-07-31 | 한국생명공학연구원 | 나노갭 및 나노갭 센서의 제조방법 |
US7563633B2 (en) * | 2006-08-25 | 2009-07-21 | Robert Bosch Gmbh | Microelectromechanical systems encapsulation process |
US8165323B2 (en) * | 2006-11-28 | 2012-04-24 | Zhou Tiansheng | Monolithic capacitive transducer |
US7816166B1 (en) * | 2007-03-09 | 2010-10-19 | Silicon Labs Sc, Inc. | Method to form a MEMS structure having a suspended portion |
US7858422B1 (en) | 2007-03-09 | 2010-12-28 | Silicon Labs Sc, Inc. | MEMS coupler and method to form the same |
US8084361B2 (en) * | 2007-05-30 | 2011-12-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor fabrication method suitable for MEMS |
JP4477051B2 (ja) * | 2007-09-12 | 2010-06-09 | 株式会社東芝 | 半導体集積回路及びmems型可変容量キャパシタの制御方法 |
US7881594B2 (en) | 2007-12-27 | 2011-02-01 | Stmicroeletronics, Inc. | Heating system and method for microfluidic and micromechanical applications |
US7851875B2 (en) | 2008-01-11 | 2010-12-14 | Infineon Technologies Ag | MEMS devices and methods of manufacture thereof |
US7749789B2 (en) * | 2008-03-18 | 2010-07-06 | Solid-State Research, Inc. | CMOS-compatible bulk-micromachining process for single-crystal MEMS/NEMS devices |
US8125046B2 (en) | 2008-06-04 | 2012-02-28 | Infineon Technologies Ag | Micro-electromechanical system devices |
US8022491B2 (en) * | 2008-12-31 | 2011-09-20 | Stmicroelectronics, Inc. | High aspect ratio all SiGe capacitively coupled MEMS devices |
US7875482B2 (en) * | 2009-03-19 | 2011-01-25 | Robert Bosch Gmbh | Substrate with multiple encapsulated pressures |
US8430255B2 (en) * | 2009-03-19 | 2013-04-30 | Robert Bosch Gmbh | Method of accurately spacing Z-axis electrode |
FR2946636B1 (fr) * | 2009-06-15 | 2012-03-23 | Commissariat Energie Atomique | Procede de liberation ameliore de la structure suspendue d'un composant nems et/ou mems |
DE102012217853B4 (de) | 2011-10-04 | 2016-02-04 | Institut für Mikroelektronik- und Mechatronik-Systeme gGmbH | Anordnung zum Erzeugen eines definierten Abstands zwischen Elektrodenflächen auf integrierten Bauelementen für chemische und biochemische Sensoren |
US9777372B2 (en) | 2013-08-07 | 2017-10-03 | Regents Of The University Of Minnesota | Methods for manufacturing nano-gap and angstrom-gap articles |
US9837935B2 (en) * | 2013-10-29 | 2017-12-05 | Honeywell International Inc. | All-silicon electrode capacitive transducer on a glass substrate |
US9914118B2 (en) | 2015-08-12 | 2018-03-13 | International Business Machines Corporation | Nanogap structure for micro/nanofluidic systems formed by sacrificial sidewalls |
EP3408220A4 (de) | 2016-01-28 | 2019-09-04 | Roswell Biotechnologies, Inc | Verfahren und vorrichtung zum messen von analyten unter verwendung von grossskaligen molekularelektronischen sensorarrays |
JP7080489B2 (ja) | 2016-01-28 | 2022-06-06 | ロズウェル バイオテクノロジーズ,インコーポレイテッド | 超パラレルdna配列決定装置 |
JP6854532B2 (ja) | 2016-02-09 | 2021-04-07 | ロズウェル バイオテクノロジーズ,インコーポレイテッド | 電子的、標識フリーのdnaおよびゲノムシークエンシング |
US10597767B2 (en) | 2016-02-22 | 2020-03-24 | Roswell Biotechnologies, Inc. | Nanoparticle fabrication |
US9829456B1 (en) | 2016-07-26 | 2017-11-28 | Roswell Biotechnologies, Inc. | Method of making a multi-electrode structure usable in molecular sensing devices |
CN110431148A (zh) | 2017-01-10 | 2019-11-08 | 罗斯威尔生命技术公司 | 用于dna数据存储的方法和*** |
EP3571286A4 (de) | 2017-01-19 | 2020-10-28 | Roswell Biotechnologies, Inc | Festkörpersequenziervorrichtungen mit zweidimensionalen schichtmaterialien |
KR20200002897A (ko) | 2017-04-25 | 2020-01-08 | 로스웰 바이오테크놀로지스 인코포레이티드 | 분자 센서들을 위한 효소 회로들 |
US10508296B2 (en) | 2017-04-25 | 2019-12-17 | Roswell Biotechnologies, Inc. | Enzymatic circuits for molecular sensors |
CA3057155A1 (en) | 2017-05-09 | 2018-11-15 | Roswell Biotechnologies, Inc. | Binding probe circuits for molecular sensors |
US11371955B2 (en) | 2017-08-30 | 2022-06-28 | Roswell Biotechnologies, Inc. | Processive enzyme molecular electronic sensors for DNA data storage |
WO2019075100A1 (en) | 2017-10-10 | 2019-04-18 | Roswell Biotechnologies, Inc. | METHODS, APPARATUS AND SYSTEMS FOR STORING DNA DATA WITHOUT AMPLIFICATION |
DE102022210972A1 (de) * | 2022-10-18 | 2024-04-18 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer mikromechanischen Schichtstruktur mit hohem Aspektverhältnis und mikromechanische Schichtstruktur |
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US5093594A (en) * | 1990-06-22 | 1992-03-03 | Massachusetts Institute Of Technology | Microfabricated harmonic side-drive motors |
US5616514A (en) * | 1993-06-03 | 1997-04-01 | Robert Bosch Gmbh | Method of fabricating a micromechanical sensor |
JP3412293B2 (ja) * | 1994-11-17 | 2003-06-03 | 株式会社デンソー | 半導体ヨーレートセンサおよびその製造方法 |
US5922212A (en) * | 1995-06-08 | 1999-07-13 | Nippondenso Co., Ltd | Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body |
JP3106389B2 (ja) * | 1995-08-18 | 2000-11-06 | 株式会社村田製作所 | 可変容量コンデンサ |
JPH09318649A (ja) * | 1996-05-30 | 1997-12-12 | Texas Instr Japan Ltd | 複合センサ |
DE19730715C1 (de) * | 1996-11-12 | 1998-11-26 | Fraunhofer Ges Forschung | Verfahren zum Herstellen eines mikromechanischen Relais |
EP0941460B1 (de) * | 1996-11-28 | 2000-05-10 | Siemens Aktiengesellschaft | Verfahren zur herstellung von mikromechanischen sensoren |
US6035714A (en) * | 1997-09-08 | 2000-03-14 | The Regents Of The University Of Michigan | Microelectromechanical capacitive accelerometer and method of making same |
US6034414A (en) * | 1997-11-18 | 2000-03-07 | Industrial Technology Research Institute | Variable capacitor using resistor generated heat to control dielectric thickness |
US6242989B1 (en) * | 1998-09-12 | 2001-06-05 | Agere Systems Guardian Corp. | Article comprising a multi-port variable capacitor |
US6249073B1 (en) * | 1999-01-14 | 2001-06-19 | The Regents Of The University Of Michigan | Device including a micromechanical resonator having an operating frequency and method of extending same |
JP4511739B2 (ja) * | 1999-01-15 | 2010-07-28 | ザ リージェンツ オブ ザ ユニヴァーシティ オブ カリフォルニア | マイクロ電子機械システムを形成するための多結晶シリコンゲルマニウム膜 |
US6211098B1 (en) * | 1999-02-18 | 2001-04-03 | Taiwan Semiconductor Manufacturing Company | Wet oxidation method for forming silicon oxide dielectric layer |
DE19933418B4 (de) * | 1999-07-16 | 2005-09-29 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanischen Bauelementen |
US6229684B1 (en) * | 1999-12-15 | 2001-05-08 | Jds Uniphase Inc. | Variable capacitor and associated fabrication method |
US6362018B1 (en) * | 2000-02-02 | 2002-03-26 | Motorola, Inc. | Method for fabricating MEMS variable capacitor with stabilized electrostatic drive |
US6393913B1 (en) * | 2000-02-08 | 2002-05-28 | Sandia Corporation | Microelectromechanical dual-mass resonator structure |
DE10017422A1 (de) | 2000-04-07 | 2001-10-11 | Bosch Gmbh Robert | Mikromechanisches Bauelement und entsprechendes Herstellungverfahren |
DE10017976A1 (de) | 2000-04-11 | 2001-10-18 | Bosch Gmbh Robert | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
US6367252B1 (en) * | 2000-07-05 | 2002-04-09 | Jds Uniphase Corporation | Microelectromechanical actuators including sinuous beam structures |
US20020070816A1 (en) * | 2000-08-24 | 2002-06-13 | Wan-Thai Hsu | Method for making micromechanical structures having at least one lateral, small gap therebetween and micromechanical device produced thereby |
US6628177B2 (en) * | 2000-08-24 | 2003-09-30 | The Regents Of The University Of Michigan | Micromechanical resonator device and micromechanical device utilizing same |
ITVA20000042A1 (it) * | 2000-12-15 | 2002-06-15 | St Microelectronics Srl | Sensore di pressione monoliticamente integrato e relativo processo direalizzazione. |
US6440816B1 (en) * | 2001-01-30 | 2002-08-27 | Agere Systems Guardian Corp. | Alignment mark fabrication process to limit accumulation of errors in level to level overlay |
US6413793B1 (en) * | 2001-05-17 | 2002-07-02 | Xerox Corporation | Method of forming protrusions on single crystal silicon structures built on silicon-on-insulator wafers |
US6461888B1 (en) * | 2001-06-14 | 2002-10-08 | Institute Of Microelectronics | Lateral polysilicon beam process |
US6808954B2 (en) * | 2001-09-07 | 2004-10-26 | Intel Corporation | Vacuum-cavity MEMS resonator |
-
2003
- 2003-04-17 US US10/418,617 patent/US7172917B2/en not_active Expired - Lifetime
-
2004
- 2004-03-22 EP EP04759726A patent/EP1618599B1/de not_active Expired - Lifetime
- 2004-03-22 AT AT04759726T patent/ATE509355T1/de not_active IP Right Cessation
- 2004-03-22 WO PCT/US2004/008808 patent/WO2004095540A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP1618599A2 (de) | 2006-01-25 |
WO2004095540A3 (en) | 2005-07-28 |
US7172917B2 (en) | 2007-02-06 |
US20040209435A1 (en) | 2004-10-21 |
WO2004095540A2 (en) | 2004-11-04 |
EP1618599B1 (de) | 2011-05-11 |
EP1618599A4 (de) | 2009-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |