ATE490560T1 - Verfahren zur herstellung eines dünnschichttransistors mit einem oxidhalbleiter - Google Patents
Verfahren zur herstellung eines dünnschichttransistors mit einem oxidhalbleiterInfo
- Publication number
- ATE490560T1 ATE490560T1 AT08765059T AT08765059T ATE490560T1 AT E490560 T1 ATE490560 T1 AT E490560T1 AT 08765059 T AT08765059 T AT 08765059T AT 08765059 T AT08765059 T AT 08765059T AT E490560 T1 ATE490560 T1 AT E490560T1
- Authority
- AT
- Austria
- Prior art keywords
- insulation film
- oxide semiconductor
- semiconductor layer
- forming
- gate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 10
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 11
- 238000009413 insulation Methods 0.000 abstract 11
- 238000000059 patterning Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Formation Of Insulating Films (AREA)
- Dram (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007145186 | 2007-05-31 | ||
| PCT/JP2008/060246 WO2008149873A1 (en) | 2007-05-31 | 2008-05-28 | Manufacturing method of thin film transistor using oxide semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE490560T1 true ATE490560T1 (de) | 2010-12-15 |
Family
ID=39816905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08765059T ATE490560T1 (de) | 2007-05-31 | 2008-05-28 | Verfahren zur herstellung eines dünnschichttransistors mit einem oxidhalbleiter |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8193045B2 (de) |
| EP (1) | EP2153468B1 (de) |
| JP (1) | JP5361249B2 (de) |
| KR (1) | KR101092483B1 (de) |
| CN (1) | CN101681928B (de) |
| AT (1) | ATE490560T1 (de) |
| DE (1) | DE602008003796D1 (de) |
| TW (1) | TWI373142B (de) |
| WO (1) | WO2008149873A1 (de) |
Families Citing this family (126)
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| TWI654689B (zh) | 2008-12-26 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US8174021B2 (en) * | 2009-02-06 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
| JP5512144B2 (ja) * | 2009-02-12 | 2014-06-04 | 富士フイルム株式会社 | 薄膜トランジスタ及びその製造方法 |
| US8278657B2 (en) * | 2009-02-13 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device |
| US8247276B2 (en) * | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
| JP2010205987A (ja) * | 2009-03-04 | 2010-09-16 | Sony Corp | 薄膜トランジスタおよびその製造方法並びに表示装置 |
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| JP2009010362A (ja) | 2009-01-15 |
| TW200915577A (en) | 2009-04-01 |
| JP5361249B2 (ja) | 2013-12-04 |
| US8193045B2 (en) | 2012-06-05 |
| CN101681928A (zh) | 2010-03-24 |
| KR101092483B1 (ko) | 2011-12-13 |
| DE602008003796D1 (de) | 2011-01-13 |
| EP2153468A1 (de) | 2010-02-17 |
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