ATE489730T1 - Elektronisches bauteil - Google Patents
Elektronisches bauteilInfo
- Publication number
- ATE489730T1 ATE489730T1 AT04705480T AT04705480T ATE489730T1 AT E489730 T1 ATE489730 T1 AT E489730T1 AT 04705480 T AT04705480 T AT 04705480T AT 04705480 T AT04705480 T AT 04705480T AT E489730 T1 ATE489730 T1 AT E489730T1
- Authority
- AT
- Austria
- Prior art keywords
- electronic component
- organic semiconductor
- semiconductor material
- ambipolar
- behaviour
- Prior art date
Links
- 239000000463 material Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/331—Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/653—Aromatic compounds comprising a hetero atom comprising only oxygen as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Thermistors And Varistors (AREA)
- Valve Device For Special Equipments (AREA)
- Noodles (AREA)
- Surgical Instruments (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03100177 | 2003-01-28 | ||
PCT/IB2004/050055 WO2004068609A1 (en) | 2003-01-28 | 2004-01-27 | Electronic device and method of manufacturing thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE489730T1 true ATE489730T1 (de) | 2010-12-15 |
Family
ID=32798988
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04705146T ATE359545T1 (de) | 2003-01-28 | 2004-01-26 | Elektronische vorrichtung |
AT04705480T ATE489730T1 (de) | 2003-01-28 | 2004-01-27 | Elektronisches bauteil |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04705146T ATE359545T1 (de) | 2003-01-28 | 2004-01-26 | Elektronische vorrichtung |
Country Status (8)
Country | Link |
---|---|
US (2) | US20060243965A1 (de) |
EP (2) | EP1590721B1 (de) |
JP (1) | JP2006518938A (de) |
KR (1) | KR20050096162A (de) |
CN (2) | CN1742392A (de) |
AT (2) | ATE359545T1 (de) |
DE (2) | DE602004005824T2 (de) |
WO (2) | WO2004068267A2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004008784B3 (de) * | 2004-02-23 | 2005-09-15 | Infineon Technologies Ag | Verfahren zur Durchkontaktierung von Feldeffekttransistoren mit einer selbstorganisierten Monolage einer organischen Verbindung als Gatedielektrikum |
JP4661065B2 (ja) * | 2004-03-22 | 2011-03-30 | セイコーエプソン株式会社 | 相補型有機半導体装置 |
TWI228833B (en) * | 2004-05-04 | 2005-03-01 | Ind Tech Res Inst | Method for enhancing the electrical characteristics of organic electronic devices |
DE102004059467A1 (de) * | 2004-12-10 | 2006-07-20 | Polyic Gmbh & Co. Kg | Gatter aus organischen Feldeffekttransistoren |
KR100585629B1 (ko) * | 2005-02-04 | 2006-06-07 | 삼성전자주식회사 | 신뢰성을 향상시키는 안티퓨즈 회로 및 이를 이용한안티퓨징 방법 |
DE102005034414B4 (de) * | 2005-07-22 | 2007-11-15 | Siemens Ag | Verwendung eines lösungsprozessierbaren Materials als aktive halbleitende Schicht in einem n-Typ-Transistor |
US20070146426A1 (en) * | 2005-12-28 | 2007-06-28 | Nelson Brian K | All-inkjet printed thin film transistor |
TWI345326B (en) * | 2006-03-29 | 2011-07-11 | Pioneer Corp | Organic thin film transistor device and manufacturing method therefor |
US8247801B2 (en) * | 2006-03-31 | 2012-08-21 | Imec | Organic semi-conductor photo-detecting device |
US20070286953A1 (en) * | 2006-05-20 | 2007-12-13 | Macpherson Charles D | Solution processible materials and their use in electronic devices |
KR100943146B1 (ko) * | 2007-02-13 | 2010-02-18 | 주식회사 엘지화학 | 티아졸로티아졸 유도체를 이용한 유기 트랜지스터 및 이의제조방법 |
US8129714B2 (en) * | 2007-02-16 | 2012-03-06 | Idemitsu Kosan Co., Ltd. | Semiconductor, semiconductor device, complementary transistor circuit device |
GB0706756D0 (en) * | 2007-04-05 | 2007-05-16 | Imp Innovations Ltd | Improvements in organic field-effect transistors |
US7652339B2 (en) * | 2007-04-06 | 2010-01-26 | Xerox Corporation | Ambipolar transistor design |
DE102009043348B4 (de) | 2009-09-29 | 2012-12-13 | Siemens Aktiengesellschaft | Material für eine photoaktive Schicht in organischen Photodioden, Verwendung dazu, sowie eine organische Photodiode |
JP5875709B2 (ja) * | 2012-02-02 | 2016-03-02 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 有機半導体デバイスの製造方法 |
US10005879B2 (en) | 2012-02-03 | 2018-06-26 | Basf Se | Method for producing an organic semiconductor device |
US9147615B2 (en) | 2014-02-14 | 2015-09-29 | International Business Machines Corporation | Ambipolar synaptic devices |
US10692863B2 (en) * | 2016-09-30 | 2020-06-23 | Rohm Co., Ltd. | Semiconductor device and semiconductor package |
US10475698B2 (en) * | 2017-03-31 | 2019-11-12 | Teresa Oh | Ambipolar transistor and electronic sensor of high sensitivity using the same |
KR102363387B1 (ko) * | 2020-01-21 | 2022-02-15 | 금오공과대학교 산학협력단 | 불소 처리 그래핀을 이용한 2차원 구조 센서 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2813428B2 (ja) * | 1989-08-17 | 1998-10-22 | 三菱電機株式会社 | 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置 |
JP3522771B2 (ja) * | 1991-03-22 | 2004-04-26 | 三菱電機株式会社 | インバータ |
US5380807A (en) * | 1992-01-15 | 1995-01-10 | U.S. Philips Corporation | Electrically conductive alternating copolymer and method of preparing such a copolymer |
JP3246189B2 (ja) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
TW293172B (de) * | 1994-12-09 | 1996-12-11 | At & T Corp | |
US5574291A (en) * | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
US6278127B1 (en) * | 1994-12-09 | 2001-08-21 | Agere Systems Guardian Corp. | Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor |
JPH0974217A (ja) * | 1995-09-07 | 1997-03-18 | Nippon Shokubai Co Ltd | 有機太陽電池 |
US5625199A (en) * | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
EP0968537B1 (de) * | 1997-08-22 | 2012-05-02 | Creator Technology B.V. | Feld-effekt-transistor, der im wesentlichen aus organischen materialien besteht |
JP2004538618A (ja) * | 1999-10-11 | 2004-12-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 集積回路 |
US6284562B1 (en) * | 1999-11-17 | 2001-09-04 | Agere Systems Guardian Corp. | Thin film transistors |
US6429040B1 (en) * | 2000-04-06 | 2002-08-06 | Agere Systems Guardian Corp. | Device comprising a bipolar semi-conducting film |
US6452207B1 (en) * | 2001-03-30 | 2002-09-17 | Lucent Technologies Inc. | Organic semiconductor devices |
JP2002326305A (ja) * | 2001-04-27 | 2002-11-12 | Nisshinbo Ind Inc | 透視性電磁波シールド板、その製造方法及びディスプレイ装置 |
EP1291932A3 (de) * | 2001-09-05 | 2006-10-18 | Konica Corporation | Organisches Dünnfilmhalbleiterelement und dessen Herstellung |
EP1438757A2 (de) * | 2001-10-01 | 2004-07-21 | Koninklijke Philips Electronics N.V. | Zusammensetzung, verfahren und elektronische einrichtung |
EP1306909A1 (de) * | 2001-10-24 | 2003-05-02 | Interuniversitair Micro-Elektronica Centrum | Ambipolarer organischer Transistor |
US6555411B1 (en) * | 2001-12-18 | 2003-04-29 | Lucent Technologies Inc. | Thin film transistors |
-
2004
- 2004-01-26 DE DE602004005824T patent/DE602004005824T2/de not_active Expired - Fee Related
- 2004-01-26 AT AT04705146T patent/ATE359545T1/de not_active IP Right Cessation
- 2004-01-26 JP JP2006502543A patent/JP2006518938A/ja active Pending
- 2004-01-26 EP EP04705146A patent/EP1590721B1/de not_active Expired - Lifetime
- 2004-01-26 US US10/543,277 patent/US20060243965A1/en not_active Abandoned
- 2004-01-26 CN CN200480002935.8A patent/CN1742392A/zh active Pending
- 2004-01-26 WO PCT/IB2004/050053 patent/WO2004068267A2/en active IP Right Grant
- 2004-01-26 KR KR1020057013847A patent/KR20050096162A/ko not_active Application Discontinuation
- 2004-01-27 WO PCT/IB2004/050055 patent/WO2004068609A1/en active Application Filing
- 2004-01-27 EP EP04705480A patent/EP1590839B1/de not_active Expired - Lifetime
- 2004-01-27 US US10/543,276 patent/US7750339B2/en not_active Expired - Fee Related
- 2004-01-27 CN CN200480002930.5A patent/CN1742393B/zh not_active Expired - Fee Related
- 2004-01-27 DE DE602004030214T patent/DE602004030214D1/de not_active Expired - Lifetime
- 2004-01-27 AT AT04705480T patent/ATE489730T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1590721A2 (de) | 2005-11-02 |
KR20050096162A (ko) | 2005-10-05 |
CN1742393B (zh) | 2011-12-28 |
WO2004068609A1 (en) | 2004-08-12 |
US20060163561A1 (en) | 2006-07-27 |
WO2004068267A3 (en) | 2004-09-16 |
DE602004005824T2 (de) | 2008-01-10 |
US20060243965A1 (en) | 2006-11-02 |
WO2004068267A2 (en) | 2004-08-12 |
EP1590839A1 (de) | 2005-11-02 |
EP1590721B1 (de) | 2007-04-11 |
ATE359545T1 (de) | 2007-05-15 |
JP2006518938A (ja) | 2006-08-17 |
CN1742393A (zh) | 2006-03-01 |
US7750339B2 (en) | 2010-07-06 |
CN1742392A (zh) | 2006-03-01 |
DE602004030214D1 (de) | 2011-01-05 |
EP1590839B1 (de) | 2010-11-24 |
DE602004005824D1 (de) | 2007-05-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |