ATE472175T1 - Verbesserungen in impatt-dioden - Google Patents

Verbesserungen in impatt-dioden

Info

Publication number
ATE472175T1
ATE472175T1 AT99949238T AT99949238T ATE472175T1 AT E472175 T1 ATE472175 T1 AT E472175T1 AT 99949238 T AT99949238 T AT 99949238T AT 99949238 T AT99949238 T AT 99949238T AT E472175 T1 ATE472175 T1 AT E472175T1
Authority
AT
Austria
Prior art keywords
region
avalanche
bandgap
injected
current
Prior art date
Application number
AT99949238T
Other languages
English (en)
Inventor
David Charles Wilfred Herbert
Robert Gordon Davis
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of ATE472175T1 publication Critical patent/ATE472175T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Luminescent Compositions (AREA)
  • Glass Compositions (AREA)
  • Electrodes Of Semiconductors (AREA)
AT99949238T 1998-10-23 1999-10-22 Verbesserungen in impatt-dioden ATE472175T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9823115.2A GB9823115D0 (en) 1998-10-23 1998-10-23 Improvements in impatt diodes
PCT/GB1999/003428 WO2000025366A1 (en) 1998-10-23 1999-10-22 Improvements in impatt diodes

Publications (1)

Publication Number Publication Date
ATE472175T1 true ATE472175T1 (de) 2010-07-15

Family

ID=10841080

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99949238T ATE472175T1 (de) 1998-10-23 1999-10-22 Verbesserungen in impatt-dioden

Country Status (7)

Country Link
US (1) US6774460B1 (de)
EP (1) EP1123566B1 (de)
JP (1) JP2003519436A (de)
AT (1) ATE472175T1 (de)
DE (1) DE69942527D1 (de)
GB (1) GB9823115D0 (de)
WO (1) WO2000025366A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8074581B2 (en) 2007-10-12 2011-12-13 Steelcase Inc. Conference table assembly
JP5309360B2 (ja) * 2008-07-31 2013-10-09 三菱電機株式会社 半導体装置およびその製造方法
US20140361954A1 (en) 2013-06-07 2014-12-11 Lewis Epstein Personal control apparatus and method for sharing information in a collaboration workspace
US10631632B2 (en) * 2008-10-13 2020-04-28 Steelcase Inc. Egalitarian control apparatus and method for sharing information in a collaborative workspace
US10884607B1 (en) 2009-05-29 2021-01-05 Steelcase Inc. Personal control apparatus and method for sharing information in a collaborative workspace
JP2011222929A (ja) * 2010-03-23 2011-11-04 Toshiba Corp 不揮発性記憶装置及びその製造方法
US9412879B2 (en) * 2013-07-18 2016-08-09 Texas Instruments Incorporated Integration of the silicon IMPATT diode in an analog technology
US10264213B1 (en) 2016-12-15 2019-04-16 Steelcase Inc. Content amplification system and method
CN109616552B (zh) * 2018-11-21 2020-04-14 温州大学 GaN/SiC异质结侧向型光控IMPATT二极管及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2399740A1 (fr) * 1977-08-02 1979-03-02 Thomson Csf Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode
DE3725214A1 (de) * 1986-09-27 1988-03-31 Licentia Gmbh Impatt-diode
US5466965A (en) * 1992-12-02 1995-11-14 The Regents Of The University Of California High efficiency, high power multiquantum well IMPATT device with optical injection locking
EP0757392B1 (de) * 1995-08-03 2003-12-17 Hitachi Europe Limited Halbleiterstrukturen

Also Published As

Publication number Publication date
DE69942527D1 (de) 2010-08-05
WO2000025366A1 (en) 2000-05-04
EP1123566A1 (de) 2001-08-16
JP2003519436A (ja) 2003-06-17
US6774460B1 (en) 2004-08-10
EP1123566B1 (de) 2010-06-23
GB9823115D0 (en) 1998-12-16

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Legal Events

Date Code Title Description
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