FR2399740A1 - Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode - Google Patents

Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode

Info

Publication number
FR2399740A1
FR2399740A1 FR7723779A FR7723779A FR2399740A1 FR 2399740 A1 FR2399740 A1 FR 2399740A1 FR 7723779 A FR7723779 A FR 7723779A FR 7723779 A FR7723779 A FR 7723779A FR 2399740 A1 FR2399740 A1 FR 2399740A1
Authority
FR
France
Prior art keywords
diode
mode
doped
avalanche
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7723779A
Other languages
English (en)
Other versions
FR2399740B1 (fr
Inventor
Daniel Delagebeaudeuf
Delagebeaudeuf Et Thomas Pearsall Daniel
Thomas Pearsall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7723779A priority Critical patent/FR2399740A1/fr
Priority to JP9138078A priority patent/JPS5452481A/ja
Priority to US05/929,500 priority patent/US4186407A/en
Priority to DE19782833543 priority patent/DE2833543A1/de
Priority to CA308,516A priority patent/CA1104265A/fr
Priority to GB7832031A priority patent/GB2002579B/en
Publication of FR2399740A1 publication Critical patent/FR2399740A1/fr
Application granted granted Critical
Publication of FR2399740B1 publication Critical patent/FR2399740B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention concerne une diode à avalanche destinée à fonctionner en mode à temps de transit >> (mode IMPATT de la terminologie anglo-saxonne). Pour améliorer le rendement, on cherche à avoir une zone d'avalanche limitée à une région de faible épaisseur par rapport à l'épaisseur totale de la jonction semi-conductrice. La diode selon l'invention comporte un substrat monocristallin In P dopé n**+ supportant une série de trois couches, déposées par épitaxie et dont les réseaux monocristallins se raccordent, à savoir une couche In P dopée n et deux couches Ga0,47 In 0,53 As dopées n et p**+, ces deux dernières étant de très faible épaisseur. Une polarisation inverse est appliquée à la jonction p** + n et produit le phénomène d'avalanche dans la mince couche n d'alliage ternaire. Application à la génération de très haute fréquence.
FR7723779A 1977-08-02 1977-08-02 Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode Granted FR2399740A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7723779A FR2399740A1 (fr) 1977-08-02 1977-08-02 Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode
JP9138078A JPS5452481A (en) 1977-08-02 1978-07-26 Heterojunction avalanche diode
US05/929,500 US4186407A (en) 1977-08-02 1978-07-31 Heterojunction avalanche diode with a ternary alloy of gallium, indium and arsenic, and a binary alloy of indium and phosphorus
DE19782833543 DE2833543A1 (de) 1977-08-02 1978-07-31 Lawinendiode mit hetero-uebergang
CA308,516A CA1104265A (fr) 1977-08-02 1978-08-01 Diode de zener, jonction heterogene, faite d'un alliage ternaire de gallium, indium et arsenic, et d'un alliage binaire d'indium et de phosphore
GB7832031A GB2002579B (en) 1977-08-02 1978-08-02 Avalanche diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7723779A FR2399740A1 (fr) 1977-08-02 1977-08-02 Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode

Publications (2)

Publication Number Publication Date
FR2399740A1 true FR2399740A1 (fr) 1979-03-02
FR2399740B1 FR2399740B1 (fr) 1982-02-26

Family

ID=9194131

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7723779A Granted FR2399740A1 (fr) 1977-08-02 1977-08-02 Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode

Country Status (6)

Country Link
US (1) US4186407A (fr)
JP (1) JPS5452481A (fr)
CA (1) CA1104265A (fr)
DE (1) DE2833543A1 (fr)
FR (1) FR2399740A1 (fr)
GB (1) GB2002579B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2447612A1 (fr) * 1979-01-26 1980-08-22 Thomson Csf Composant semi-conducteur a heterojonction
US4250516A (en) * 1979-08-06 1981-02-10 Bell Telephone Laboratories, Incorporated Multistage avalanche photodetector
US4291320A (en) * 1980-01-10 1981-09-22 Rockwell International Corporation Heterojunction IMPATT diode
US4353081A (en) * 1980-01-29 1982-10-05 Bell Telephone Laboratories, Incorporated Graded bandgap rectifying semiconductor devices
FR2476944A1 (fr) * 1980-02-21 1981-08-28 Bois Daniel Relais optoelectronique integre utilisant un semiconducteur a photoconductivite persistante et matrice de tels relais
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
US4319937A (en) * 1980-11-12 1982-03-16 University Of Illinois Foundation Homogeneous liquid phase epitaxial growth of heterojunction materials
US4468851A (en) * 1981-12-14 1984-09-04 The United States Of America As Represented By The Secretary Of The Navy Process for making a heterojunction source-drain insulated gate field-effect transistors utilizing diffusion to form the lattice
JPS63153867A (ja) * 1986-08-04 1988-06-27 Fujitsu Ltd 共鳴トンネリング半導体装置
FR2689683B1 (fr) * 1992-04-07 1994-05-20 Thomson Composants Microondes Dispositif semiconducteur a transistors complementaires.
GB9823115D0 (en) * 1998-10-23 1998-12-16 Secr Defence Improvements in impatt diodes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466512A (en) * 1967-05-29 1969-09-09 Bell Telephone Labor Inc Impact avalanche transit time diodes with heterojunction structure
US3982261A (en) * 1972-09-22 1976-09-21 Varian Associates Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices
FR2225842B1 (fr) * 1973-04-13 1977-09-02 Thomson Csf
US4017332A (en) * 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
JPS52101990A (en) * 1976-02-21 1977-08-26 Hitachi Ltd Semiconductor device for photoelectric transducer and its manufacture
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers

Also Published As

Publication number Publication date
JPS5452481A (en) 1979-04-25
GB2002579B (en) 1982-05-19
DE2833543A1 (de) 1979-02-15
GB2002579A (en) 1979-02-21
US4186407A (en) 1980-01-29
CA1104265A (fr) 1981-06-30
FR2399740B1 (fr) 1982-02-26

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Legal Events

Date Code Title Description
ST Notification of lapse