ATE371957T1 - Halbleiteranordnungen mit feldformungsgebieten - Google Patents

Halbleiteranordnungen mit feldformungsgebieten

Info

Publication number
ATE371957T1
ATE371957T1 AT02712149T AT02712149T ATE371957T1 AT E371957 T1 ATE371957 T1 AT E371957T1 AT 02712149 T AT02712149 T AT 02712149T AT 02712149 T AT02712149 T AT 02712149T AT E371957 T1 ATE371957 T1 AT E371957T1
Authority
AT
Austria
Prior art keywords
voltage
insulating layer
resistive path
trench
sustaining zone
Prior art date
Application number
AT02712149T
Other languages
English (en)
Inventor
Dalen Rob Van
Christelle Rochefort
Godefridus Hurkx
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE371957T1 publication Critical patent/ATE371957T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Recrystallisation Techniques (AREA)
AT02712149T 2001-02-22 2002-02-15 Halbleiteranordnungen mit feldformungsgebieten ATE371957T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0104342.1A GB0104342D0 (en) 2001-02-22 2001-02-22 Semiconductor devices

Publications (1)

Publication Number Publication Date
ATE371957T1 true ATE371957T1 (de) 2007-09-15

Family

ID=9909252

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02712149T ATE371957T1 (de) 2001-02-22 2002-02-15 Halbleiteranordnungen mit feldformungsgebieten

Country Status (8)

Country Link
US (1) US6605862B2 (de)
EP (1) EP1368837B1 (de)
JP (1) JP4125126B2 (de)
KR (1) KR100900852B1 (de)
AT (1) ATE371957T1 (de)
DE (1) DE60222099T2 (de)
GB (1) GB0104342D0 (de)
WO (1) WO2002067332A2 (de)

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US6803626B2 (en) * 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6787872B2 (en) * 2001-06-26 2004-09-07 International Rectifier Corporation Lateral conduction superjunction semiconductor device
US7166890B2 (en) 2003-10-21 2007-01-23 Srikant Sridevan Superjunction device with improved ruggedness
DE102004007197B4 (de) 2004-02-13 2012-11-08 Infineon Technologies Ag Hochsperrendes Halbleiterbauelement mit niedriger Durchlassspannung
DE102004046697B4 (de) * 2004-09-24 2020-06-10 Infineon Technologies Ag Hochspannungsfestes Halbleiterbauelement mit vertikal leitenden Halbleiterkörperbereichen und einer Grabenstruktur sowie Verfahren zur Herstellung desselben
TWI278090B (en) * 2004-10-21 2007-04-01 Int Rectifier Corp Solderable top metal for SiC device
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
WO2007011270A1 (en) * 2005-07-15 2007-01-25 Telefonaktiebolaget L M Ericsson (Publ) An arrangement for peak-field suppression
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
DE102005046711B4 (de) 2005-09-29 2007-12-27 Infineon Technologies Austria Ag Verfahren zur Herstellung eines vertikalen MOS-Halbleiterbauelementes mit dünner Dielektrikumsschicht und tiefreichenden vertikalen Abschnitten
US8368165B2 (en) 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US7659588B2 (en) * 2006-01-26 2010-02-09 Siliconix Technology C. V. Termination for a superjunction device
US8080848B2 (en) 2006-05-11 2011-12-20 Fairchild Semiconductor Corporation High voltage semiconductor device with lateral series capacitive structure
JP2009545885A (ja) * 2006-07-31 2009-12-24 ヴィシェイ−シリコニックス ＳｉＣショットキーダイオード用モリブデンバリア金属および製造方法
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough
US20080296636A1 (en) * 2007-05-31 2008-12-04 Darwish Mohamed N Devices and integrated circuits including lateral floating capacitively coupled structures
TW200921912A (en) * 2007-11-05 2009-05-16 Anpec Electronics Corp Power transistor capable of decreasing capacitance between gate and drain
US8193565B2 (en) * 2008-04-18 2012-06-05 Fairchild Semiconductor Corporation Multi-level lateral floating coupled capacitor transistor structures
US8203181B2 (en) 2008-09-30 2012-06-19 Infineon Technologies Austria Ag Trench MOSFET semiconductor device and manufacturing method therefor
US8022474B2 (en) * 2008-09-30 2011-09-20 Infineon Technologies Austria Ag Semiconductor device
KR101171886B1 (ko) * 2009-07-31 2012-08-07 에스케이하이닉스 주식회사 매립게이트를 구비한 반도체장치 및 그 제조 방법
US8624302B2 (en) * 2010-02-05 2014-01-07 Fairchild Semiconductor Corporation Structure and method for post oxidation silicon trench bottom shaping
WO2012060014A1 (ja) * 2010-11-05 2012-05-10 富士通株式会社 半導体装置及び半導体装置の製造方法
CN102566842B (zh) * 2010-12-06 2014-10-29 乐金显示有限公司 静电电容型触摸屏面板
US8716788B2 (en) * 2011-09-30 2014-05-06 Infineon Technologies Austria Ag Semiconductor device with self-charging field electrodes
US9391149B2 (en) * 2013-06-19 2016-07-12 Infineon Technologies Austria Ag Semiconductor device with self-charging field electrodes
CN105529369B (zh) * 2016-03-08 2019-05-14 中国电子科技集团公司第二十四研究所 一种半导体元胞结构和功率半导体器件
DE102017114568B4 (de) * 2017-06-29 2021-11-25 Infineon Technologies Austria Ag Leistungshalbleitervorrichtung mit unterschiedlichen gatekreuzungen und verfahren zum herstellen davon
JP2019091822A (ja) * 2017-11-15 2019-06-13 株式会社東芝 半導体装置
TW201937607A (zh) 2018-02-23 2019-09-16 力智電子股份有限公司 溝槽式閘極金氧半場效電晶體
JP7374795B2 (ja) * 2020-02-05 2023-11-07 株式会社東芝 半導体装置
CN114093951A (zh) * 2021-11-12 2022-02-25 济南市半导体元件实验所 一种抗emi的超结vdmos器件及制备方法

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GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4933739A (en) * 1988-04-26 1990-06-12 Eliyahou Harari Trench resistor structures for compact semiconductor memory and logic devices
US5744851A (en) * 1992-01-27 1998-04-28 Harris Corporation Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions
US5895951A (en) * 1996-04-05 1999-04-20 Megamos Corporation MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches
DE19848828C2 (de) 1998-10-22 2001-09-13 Infineon Technologies Ag Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit
WO2000068997A1 (en) * 1999-05-06 2000-11-16 C.P. Clare Corporation Mosfet with field reducing trenches in body region
GB0003186D0 (en) 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv A semiconductor device
GB0003184D0 (en) 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv A semiconductor device and a method of fabricating material for a semiconductor device

Also Published As

Publication number Publication date
EP1368837B1 (de) 2007-08-29
WO2002067332A2 (en) 2002-08-29
JP4125126B2 (ja) 2008-07-30
US6605862B2 (en) 2003-08-12
JP2004519848A (ja) 2004-07-02
GB0104342D0 (en) 2001-04-11
WO2002067332A3 (en) 2003-02-20
KR20020092439A (ko) 2002-12-11
EP1368837A2 (de) 2003-12-10
DE60222099T2 (de) 2008-05-21
US20020130358A1 (en) 2002-09-19
KR100900852B1 (ko) 2009-06-04
DE60222099D1 (de) 2007-10-11

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