ATE463838T1 - Polierzusammensetzung und polierverfahren - Google Patents
Polierzusammensetzung und polierverfahrenInfo
- Publication number
- ATE463838T1 ATE463838T1 AT04788401T AT04788401T ATE463838T1 AT E463838 T1 ATE463838 T1 AT E463838T1 AT 04788401 T AT04788401 T AT 04788401T AT 04788401 T AT04788401 T AT 04788401T AT E463838 T1 ATE463838 T1 AT E463838T1
- Authority
- AT
- Austria
- Prior art keywords
- polishing
- polishing composition
- trench
- positioned outside
- anticorrosive
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 8
- 238000000034 method Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000004372 Polyvinyl alcohol Substances 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract 1
- 239000008119 colloidal silica Substances 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 229920002451 polyvinyl alcohol Polymers 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Disintegrating Or Milling (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003342532A JP4541674B2 (ja) | 2003-09-30 | 2003-09-30 | 研磨用組成物 |
JP2003358551A JP2005123482A (ja) | 2003-10-17 | 2003-10-17 | 研磨方法 |
PCT/JP2004/014373 WO2005031836A1 (ja) | 2003-09-30 | 2004-09-30 | 研磨用組成物及び研磨方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE463838T1 true ATE463838T1 (de) | 2010-04-15 |
Family
ID=34395638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04788401T ATE463838T1 (de) | 2003-09-30 | 2004-09-30 | Polierzusammensetzung und polierverfahren |
Country Status (8)
Country | Link |
---|---|
US (1) | US20070176140A1 (de) |
EP (1) | EP1670047B1 (de) |
KR (1) | KR101110723B1 (de) |
CN (1) | CN100435290C (de) |
AT (1) | ATE463838T1 (de) |
DE (1) | DE602004026454D1 (de) |
TW (1) | TW200526768A (de) |
WO (1) | WO2005031836A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4644434B2 (ja) | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2006086462A (ja) * | 2004-09-17 | 2006-03-30 | Fujimi Inc | 研磨用組成物およびそれを用いた配線構造体の製造法 |
CN102863943B (zh) * | 2005-08-30 | 2015-03-25 | 花王株式会社 | 硬盘用基板用研磨液组合物、基板的研磨方法和制造方法 |
JP4277930B2 (ja) * | 2005-12-21 | 2009-06-10 | 旭硝子株式会社 | 研磨用組成物、研磨方法および半導体集積回路用銅配線の作製方法 |
US7837888B2 (en) * | 2006-11-13 | 2010-11-23 | Cabot Microelectronics Corporation | Composition and method for damascene CMP |
DE102006056624B4 (de) * | 2006-11-30 | 2012-03-29 | Globalfoundries Inc. | Verfahren zur Herstellung einer selbstjustierten CuSiN-Deckschicht in einem Mikrostrukturbauelement |
US20110081780A1 (en) * | 2008-02-18 | 2011-04-07 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method |
CN101665662A (zh) * | 2008-09-05 | 2010-03-10 | 安集微电子科技(上海)有限公司 | 一种化学机械抛光液 |
CN101429318B (zh) * | 2008-10-09 | 2011-03-23 | 孙泉根 | 富含水性聚乙烯醇研磨擦拭块及其制造方法 |
KR101178236B1 (ko) * | 2009-10-13 | 2012-08-29 | 주식회사 엘지화학 | Cmp용 슬러리 조성물 및 연마방법 |
JP5587620B2 (ja) * | 2010-01-25 | 2014-09-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
CN102666014B (zh) | 2010-03-12 | 2017-10-31 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液以及使用它们的基板的研磨方法 |
WO2012070542A1 (ja) | 2010-11-22 | 2012-05-31 | 日立化成工業株式会社 | スラリー、研磨液セット、研磨液、基板の研磨方法及び基板 |
US10557058B2 (en) | 2012-02-21 | 2020-02-11 | Hitachi Chemical Company, Ltd. | Polishing agent, polishing agent set, and substrate polishing method |
WO2013125445A1 (ja) * | 2012-02-21 | 2013-08-29 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
SG11201407087XA (en) | 2012-05-22 | 2014-12-30 | Hitachi Chemical Co Ltd | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
CN104321852B (zh) | 2012-05-22 | 2016-12-28 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法及基体 |
US9039914B2 (en) * | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
KR20150036518A (ko) * | 2012-07-17 | 2015-04-07 | 가부시키가이샤 후지미인코퍼레이티드 | 합금 재료 연마용 조성물 및 그것을 사용한 합금 재료의 제조 방법 |
WO2014084091A1 (ja) * | 2012-11-30 | 2014-06-05 | ニッタ・ハース株式会社 | 研磨組成物 |
DE102013016889B4 (de) * | 2013-10-11 | 2016-10-13 | Clariant International Ltd. | Wässrige, bindemittelfreie Pigmentpräparationen und deren Verwendungen |
KR102645587B1 (ko) * | 2016-02-29 | 2024-03-11 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 이것을 사용한 연마 방법 |
SG10201904669TA (en) | 2018-06-28 | 2020-01-30 | Kctech Co Ltd | Polishing Slurry Composition |
CN113122145A (zh) * | 2019-12-31 | 2021-07-16 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5428721A (en) * | 1990-02-07 | 1995-06-27 | Kabushiki Kaisha Toshiba | Data processing apparatus for editing image by using image conversion |
US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
JP4115562B2 (ja) * | 1997-10-14 | 2008-07-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
JP4053165B2 (ja) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
JP4816836B2 (ja) * | 1998-12-28 | 2011-11-16 | 日立化成工業株式会社 | 金属用研磨液及びそれを用いた研磨方法 |
JP4538109B2 (ja) * | 1999-02-18 | 2010-09-08 | 株式会社トッパンTdkレーベル | 化学機械研磨組成物 |
US6573173B2 (en) * | 1999-07-13 | 2003-06-03 | Motorola, Inc. | Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
JP2001031953A (ja) * | 1999-07-19 | 2001-02-06 | Tokuyama Corp | 金属膜用研磨剤 |
ATE405618T1 (de) * | 1999-08-13 | 2008-09-15 | Cabot Microelectronics Corp | Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung |
TW501197B (en) * | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
US6503418B2 (en) * | 1999-11-04 | 2003-01-07 | Advanced Micro Devices, Inc. | Ta barrier slurry containing an organic additive |
IL151794A0 (en) * | 2000-03-31 | 2003-04-10 | Bayer Ag | Polishing agent and method for producing planar layers |
JP3837277B2 (ja) * | 2000-06-30 | 2006-10-25 | 株式会社東芝 | 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法 |
JP4253141B2 (ja) * | 2000-08-21 | 2009-04-08 | 株式会社東芝 | 化学機械研磨用スラリおよび半導体装置の製造方法 |
JP2002075927A (ja) * | 2000-08-24 | 2002-03-15 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP2002110596A (ja) * | 2000-10-02 | 2002-04-12 | Mitsubishi Electric Corp | 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法 |
JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP2002164307A (ja) * | 2000-11-24 | 2002-06-07 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
SG144688A1 (en) * | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
JP2003124158A (ja) * | 2001-10-16 | 2003-04-25 | Sumitomo Bakelite Co Ltd | 研磨用組成物 |
US20030219982A1 (en) * | 2002-05-23 | 2003-11-27 | Hitachi Chemical Co., Ltd | CMP (chemical mechanical polishing) polishing liquid for metal and polishing method |
US20040162011A1 (en) * | 2002-08-02 | 2004-08-19 | Jsr Corporation | Aqueous dispersion for chemical mechanical polishing and production process of semiconductor device |
JP4083502B2 (ja) * | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
JP3981616B2 (ja) * | 2002-10-02 | 2007-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
TWI347969B (en) * | 2003-09-30 | 2011-09-01 | Fujimi Inc | Polishing composition |
JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
-
2004
- 2004-09-30 AT AT04788401T patent/ATE463838T1/de not_active IP Right Cessation
- 2004-09-30 WO PCT/JP2004/014373 patent/WO2005031836A1/ja active Application Filing
- 2004-09-30 KR KR1020067006163A patent/KR101110723B1/ko active IP Right Grant
- 2004-09-30 TW TW093129565A patent/TW200526768A/zh unknown
- 2004-09-30 US US10/574,115 patent/US20070176140A1/en not_active Abandoned
- 2004-09-30 DE DE602004026454T patent/DE602004026454D1/de active Active
- 2004-09-30 EP EP04788401A patent/EP1670047B1/de not_active Not-in-force
- 2004-09-30 CN CNB2004800282002A patent/CN100435290C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2005031836A1 (ja) | 2005-04-07 |
EP1670047A4 (de) | 2008-09-03 |
TW200526768A (en) | 2005-08-16 |
US20070176140A1 (en) | 2007-08-02 |
TWI354696B (de) | 2011-12-21 |
CN1860592A (zh) | 2006-11-08 |
KR20060089220A (ko) | 2006-08-08 |
CN100435290C (zh) | 2008-11-19 |
EP1670047A1 (de) | 2006-06-14 |
EP1670047B1 (de) | 2010-04-07 |
KR101110723B1 (ko) | 2012-06-13 |
DE602004026454D1 (de) | 2010-05-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |