ATE457462T1 - Mobilitätsmessungen von inversionsladungsträgern - Google Patents

Mobilitätsmessungen von inversionsladungsträgern

Info

Publication number
ATE457462T1
ATE457462T1 AT07118673T AT07118673T ATE457462T1 AT E457462 T1 ATE457462 T1 AT E457462T1 AT 07118673 T AT07118673 T AT 07118673T AT 07118673 T AT07118673 T AT 07118673T AT E457462 T1 ATE457462 T1 AT E457462T1
Authority
AT
Austria
Prior art keywords
top surface
semiconductor substrate
dielectric material
layer
charge carriers
Prior art date
Application number
AT07118673T
Other languages
English (en)
Inventor
Jean-Luc Everaert
Erik Rosseel
Original Assignee
Imec
Semilab Semiconductor Physics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec, Semilab Semiconductor Physics filed Critical Imec
Application granted granted Critical
Publication of ATE457462T1 publication Critical patent/ATE457462T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Amplifiers (AREA)
AT07118673T 2007-05-29 2007-10-17 Mobilitätsmessungen von inversionsladungsträgern ATE457462T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94059407P 2007-05-29 2007-05-29

Publications (1)

Publication Number Publication Date
ATE457462T1 true ATE457462T1 (de) 2010-02-15

Family

ID=39327419

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07118673T ATE457462T1 (de) 2007-05-29 2007-10-17 Mobilitätsmessungen von inversionsladungsträgern

Country Status (5)

Country Link
US (1) US7663393B2 (de)
EP (1) EP1998184B1 (de)
JP (1) JP5303189B2 (de)
AT (1) ATE457462T1 (de)
DE (1) DE602007004714D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5702545B2 (ja) * 2009-03-17 2015-04-15 アイメックＩｍｅｃ 半導体領域の接合深さを測定する方法および装置
US8415961B1 (en) * 2010-12-07 2013-04-09 Kla-Tencor Corporation Measuring sheet resistance and other properties of a semiconductor
US8803533B2 (en) * 2011-01-06 2014-08-12 University Of South Florida Noncontact determination of interface trap density for semiconductor-dielectric interface structures
EP2757579B1 (de) * 2013-01-17 2019-06-19 IMEC vzw Verfahren zur Charakterisierung von flachen Dotiergebieten für die Verwendung in Halbleiterbauelementen
US9880200B2 (en) * 2013-09-04 2018-01-30 Kla-Tencor Corporation Method and apparatus for non-contact measurement of forward voltage, saturation current density, ideality factor and I-V curves in P-N junctions
US9823198B2 (en) * 2013-09-14 2017-11-21 Kla-Tencor Corporation Method and apparatus for non-contact measurement of internal quantum efficiency in light emitting diode structures
US10969370B2 (en) * 2015-06-05 2021-04-06 Semilab Semiconductor Physics Laboratory Co., Ltd. Measuring semiconductor doping using constant surface potential corona charging
CN117233568B (zh) * 2023-11-10 2024-02-13 青禾晶元(天津)半导体材料有限公司 载流子迁移率的计算方法和装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5442297A (en) 1994-06-30 1995-08-15 International Business Machines Corporation Contactless sheet resistance measurement method and apparatus
US5519334A (en) * 1994-09-29 1996-05-21 Advanced Micro Devices, Inc. System and method for measuring charge traps within a dielectric layer formed on a semiconductor wafer
JP4020810B2 (ja) * 2002-03-29 2007-12-12 株式会社神戸製鋼所 半導体キャリアの寿命測定装置，その方法
US6972582B2 (en) * 2003-02-10 2005-12-06 Solid State Measurements, Inc. Apparatus and method for measuring semiconductor wafer electrical properties
US6911350B2 (en) * 2003-03-28 2005-06-28 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers

Also Published As

Publication number Publication date
JP2008300837A (ja) 2008-12-11
JP5303189B2 (ja) 2013-10-02
EP1998184B1 (de) 2010-02-10
US7663393B2 (en) 2010-02-16
US20080297189A1 (en) 2008-12-04
DE602007004714D1 (de) 2010-03-25
EP1998184A1 (de) 2008-12-03

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Legal Events

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