ATE457373T1 - Verfahren zur herstellung von kolloidale nanokristalle in nicht koordinierenden lösungsmitteln - Google Patents
Verfahren zur herstellung von kolloidale nanokristalle in nicht koordinierenden lösungsmittelnInfo
- Publication number
- ATE457373T1 ATE457373T1 AT02802917T AT02802917T ATE457373T1 AT E457373 T1 ATE457373 T1 AT E457373T1 AT 02802917 T AT02802917 T AT 02802917T AT 02802917 T AT02802917 T AT 02802917T AT E457373 T1 ATE457373 T1 AT E457373T1
- Authority
- AT
- Austria
- Prior art keywords
- colloidal nanocrystals
- methods
- coordinating solvents
- substantially monodisperse
- producing colloidal
- Prior art date
Links
- 239000002159 nanocrystal Substances 0.000 title abstract 4
- 239000002904 solvent Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052755 nonmetal Inorganic materials 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
- 238000010189 synthetic method Methods 0.000 abstract 1
- 229910052723 transition metal Inorganic materials 0.000 abstract 1
- 150000003624 transition metals Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B5/00—Single-crystal growth from gels
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
- G01N15/0205—Investigating particle size or size distribution by optical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
- G01N2015/0038—Investigating nanoparticles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Pathology (AREA)
- Luminescent Compositions (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Colloid Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US30868901P | 2001-07-30 | 2001-07-30 | |
PCT/US2002/024215 WO2003050329A2 (en) | 2001-07-30 | 2002-07-30 | High quality colloidal nanocrystals and methods of preparation of the same in non-coordinating solvents |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE457373T1 true ATE457373T1 (de) | 2010-02-15 |
Family
ID=23194989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02802917T ATE457373T1 (de) | 2001-07-30 | 2002-07-30 | Verfahren zur herstellung von kolloidale nanokristalle in nicht koordinierenden lösungsmitteln |
Country Status (8)
Country | Link |
---|---|
US (1) | US7105051B2 (de) |
EP (1) | EP1412563B1 (de) |
JP (1) | JP4344613B2 (de) |
AT (1) | ATE457373T1 (de) |
AU (1) | AU2002365069A1 (de) |
CA (1) | CA2454355C (de) |
DE (1) | DE60235306D1 (de) |
WO (1) | WO2003050329A2 (de) |
Families Citing this family (87)
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KR100697511B1 (ko) | 2003-10-21 | 2007-03-20 | 삼성전자주식회사 | 광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법 |
US7253452B2 (en) * | 2004-03-08 | 2007-08-07 | Massachusetts Institute Of Technology | Blue light emitting semiconductor nanocrystal materials |
US7527773B2 (en) * | 2004-03-30 | 2009-05-05 | University Of Florida Research Foundation, Inc. | Rare earth oxide nanocrystals and methods of forming |
GB0409877D0 (en) * | 2004-04-30 | 2004-06-09 | Univ Manchester | Preparation of nanoparticle materials |
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KR100621308B1 (ko) * | 2004-05-28 | 2006-09-14 | 삼성전자주식회사 | 다중 파장에서 발광하는 황화 카드뮴 나노 결정의 제조방법 및 그에 의해 수득된 황화 카드뮴 나노 결정 |
TWI237314B (en) * | 2004-06-24 | 2005-08-01 | Ind Tech Res Inst | Doping method for forming quantum dots |
US20080277625A1 (en) * | 2004-07-16 | 2008-11-13 | Nat'l Institute Of Advanced Industrial Science And Technology | Phosphor And Production Process Of Same |
US8454927B2 (en) * | 2004-08-04 | 2013-06-04 | Crystalplex Corporation | Alloyed semiconductor nanocrystals |
GB2441666B (en) * | 2005-04-25 | 2010-12-29 | Univ Arkansas | Doped semiconductor nanocrystals and methods of making same |
CN100526420C (zh) * | 2005-05-18 | 2009-08-12 | 中国科学院长春光学精密机械与物理研究所 | 低毒性ZnSe蓝紫光量子点的制备方法 |
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JP2007169605A (ja) * | 2005-11-24 | 2007-07-05 | National Institute Of Advanced Industrial & Technology | 蛍光体、及びその製造方法 |
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EP2387544B1 (de) | 2009-01-16 | 2018-12-19 | University of Utah Research Foundation | Niedrigtemperatursynthese von kolloidalen nanokristallen |
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CN104845622A (zh) * | 2015-04-22 | 2015-08-19 | 桂林理工大学 | 一种蓖麻油酸制备六方相上转换纳米材料的方法 |
US10597580B2 (en) | 2015-10-28 | 2020-03-24 | Samsung Electronics Co., Ltd. | Quantum dots, production methods thereof, and electronic devices including the same |
KR102498798B1 (ko) | 2015-12-22 | 2023-02-09 | 삼성전자주식회사 | 양자점 및 이를 포함하는 소자 |
US10585228B2 (en) | 2015-12-29 | 2020-03-10 | Samsung Electronics Co., Ltd. | Quantum dots, production methods thereof, and electronic devices including the same |
EP3336158B1 (de) | 2016-12-14 | 2023-03-08 | Samsung Electronics Co., Ltd. | Emittierendes nanokristallteilchen, verfahren zur herstellung davon und vorrichtung mit dem emittierenden nanokristallteilchen |
JP6709328B2 (ja) | 2017-03-28 | 2020-06-10 | 富士フイルム株式会社 | Iii−v族半導体ナノ粒子の製造方法、iii−v族半導体量子ドットの製造方法、及びフロー式反応システム |
KR102652436B1 (ko) | 2019-04-18 | 2024-03-27 | 삼성전자주식회사 | ZnTeSe 기반의 양자점 |
KR20200122717A (ko) | 2019-04-18 | 2020-10-28 | 삼성전자주식회사 | 리튬 함유 무카드뮴 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자 |
KR20200122719A (ko) | 2019-04-18 | 2020-10-28 | 삼성전자주식회사 | 코어쉘 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자 |
KR20210045948A (ko) | 2019-10-17 | 2021-04-27 | 삼성전자주식회사 | 코어쉘 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자 |
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CN115818582A (zh) * | 2021-09-16 | 2023-03-21 | 浙江大学 | 前驱体组合物及其制备方法、无机纳米晶的制备方法 |
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-
2002
- 2002-07-30 AT AT02802917T patent/ATE457373T1/de not_active IP Right Cessation
- 2002-07-30 EP EP02802917A patent/EP1412563B1/de not_active Expired - Lifetime
- 2002-07-30 AU AU2002365069A patent/AU2002365069A1/en not_active Abandoned
- 2002-07-30 JP JP2003551344A patent/JP4344613B2/ja not_active Expired - Fee Related
- 2002-07-30 US US10/209,329 patent/US7105051B2/en not_active Expired - Lifetime
- 2002-07-30 WO PCT/US2002/024215 patent/WO2003050329A2/en active Application Filing
- 2002-07-30 DE DE60235306T patent/DE60235306D1/de not_active Expired - Lifetime
- 2002-07-30 CA CA2454355A patent/CA2454355C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060130741A1 (en) | 2006-06-22 |
WO2003050329A2 (en) | 2003-06-19 |
EP1412563B1 (de) | 2010-02-10 |
DE60235306D1 (de) | 2010-03-25 |
AU2002365069A8 (en) | 2003-06-23 |
CA2454355A1 (en) | 2003-06-19 |
EP1412563A2 (de) | 2004-04-28 |
CA2454355C (en) | 2011-05-10 |
JP4344613B2 (ja) | 2009-10-14 |
AU2002365069A1 (en) | 2003-06-23 |
WO2003050329A3 (en) | 2003-09-12 |
EP1412563A4 (de) | 2007-08-22 |
US7105051B2 (en) | 2006-09-12 |
JP2005521755A (ja) | 2005-07-21 |
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