ATE447768T1 - Bipolartransistoren mit grabenstruktur - Google Patents
Bipolartransistoren mit grabenstrukturInfo
- Publication number
- ATE447768T1 ATE447768T1 AT02758689T AT02758689T ATE447768T1 AT E447768 T1 ATE447768 T1 AT E447768T1 AT 02758689 T AT02758689 T AT 02758689T AT 02758689 T AT02758689 T AT 02758689T AT E447768 T1 ATE447768 T1 AT E447768T1
- Authority
- AT
- Austria
- Prior art keywords
- gate
- drift region
- bipolar transistors
- trench structure
- region
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0119215.2A GB0119215D0 (en) | 2001-08-07 | 2001-08-07 | Trench bipolar transistor |
PCT/IB2002/003289 WO2003015178A1 (en) | 2001-08-07 | 2002-08-05 | Trench bipolar transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE447768T1 true ATE447768T1 (de) | 2009-11-15 |
Family
ID=9919936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02758689T ATE447768T1 (de) | 2001-08-07 | 2002-08-05 | Bipolartransistoren mit grabenstruktur |
Country Status (7)
Country | Link |
---|---|
US (1) | US6777780B2 (de) |
EP (1) | EP1417716B1 (de) |
JP (1) | JP4053497B2 (de) |
AT (1) | ATE447768T1 (de) |
DE (1) | DE60234259D1 (de) |
GB (1) | GB0119215D0 (de) |
WO (1) | WO2003015178A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3653087B2 (ja) * | 2003-07-04 | 2005-05-25 | 三菱重工業株式会社 | Dc/dcコンバータ |
US7868424B2 (en) * | 2004-07-20 | 2011-01-11 | Nxp B.V. | Semiconductor device and method of manufacturing the same |
US20060049464A1 (en) * | 2004-09-03 | 2006-03-09 | Rao G R Mohan | Semiconductor devices with graded dopant regions |
US7821033B2 (en) * | 2007-02-15 | 2010-10-26 | Infineon Technologies Austria Ag | Semiconductor component comprising a drift zone and a drift control zone |
US8739368B2 (en) * | 2007-11-16 | 2014-06-03 | H. Stetser Murphy, Jr. | Eyeglass holder |
US9944217B2 (en) | 2013-02-11 | 2018-04-17 | Ferno-Washington, Inc. | Equipment mounting system |
US20140347135A1 (en) | 2013-05-23 | 2014-11-27 | Nxp B.V. | Bipolar transistors with control of electric field |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2543739B1 (fr) | 1983-03-30 | 1986-04-18 | Radiotechnique Compelec | Procede de realisation d'un transistor bipolaire haute tension |
US5539238A (en) | 1992-09-02 | 1996-07-23 | Texas Instruments Incorporated | Area efficient high voltage Mosfets with vertical resurf drift regions |
US5326711A (en) | 1993-01-04 | 1994-07-05 | Texas Instruments Incorporated | High performance high voltage vertical transistor and method of fabrication |
JPH0878668A (ja) | 1994-08-31 | 1996-03-22 | Toshiba Corp | 電力用半導体装置 |
US5828101A (en) * | 1995-03-30 | 1998-10-27 | Kabushiki Kaisha Toshiba | Three-terminal semiconductor device and related semiconductor devices |
US6097063A (en) * | 1996-01-22 | 2000-08-01 | Fuji Electric Co., Ltd. | Semiconductor device having a plurality of parallel drift regions |
DE19848828C2 (de) | 1998-10-22 | 2001-09-13 | Infineon Technologies Ag | Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit |
US6492711B1 (en) * | 1999-06-22 | 2002-12-10 | Matsushita Electric Industrial Co., Ltd. | Heterojunction bipolar transistor and method for fabricating the same |
JP3971062B2 (ja) | 1999-07-29 | 2007-09-05 | 株式会社東芝 | 高耐圧半導体装置 |
GB0003186D0 (en) | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | A semiconductor device |
GB0003184D0 (en) | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | A semiconductor device and a method of fabricating material for a semiconductor device |
-
2001
- 2001-08-07 GB GBGB0119215.2A patent/GB0119215D0/en not_active Ceased
-
2002
- 2002-07-25 US US10/205,555 patent/US6777780B2/en not_active Expired - Fee Related
- 2002-08-05 EP EP02758689A patent/EP1417716B1/de not_active Expired - Lifetime
- 2002-08-05 AT AT02758689T patent/ATE447768T1/de not_active IP Right Cessation
- 2002-08-05 JP JP2003520003A patent/JP4053497B2/ja not_active Expired - Fee Related
- 2002-08-05 WO PCT/IB2002/003289 patent/WO2003015178A1/en active Application Filing
- 2002-08-05 DE DE60234259T patent/DE60234259D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2004538647A (ja) | 2004-12-24 |
DE60234259D1 (de) | 2009-12-17 |
US20030030488A1 (en) | 2003-02-13 |
WO2003015178A1 (en) | 2003-02-20 |
JP4053497B2 (ja) | 2008-02-27 |
EP1417716B1 (de) | 2009-11-04 |
US6777780B2 (en) | 2004-08-17 |
GB0119215D0 (en) | 2001-09-26 |
EP1417716A1 (de) | 2004-05-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |